JP3856270B2 - ポジ型レジスト組成物 - Google Patents

ポジ型レジスト組成物 Download PDF

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Publication number
JP3856270B2
JP3856270B2 JP27004198A JP27004198A JP3856270B2 JP 3856270 B2 JP3856270 B2 JP 3856270B2 JP 27004198 A JP27004198 A JP 27004198A JP 27004198 A JP27004198 A JP 27004198A JP 3856270 B2 JP3856270 B2 JP 3856270B2
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JP
Japan
Prior art keywords
group
general formula
acid
hydrogen atom
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP27004198A
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English (en)
Japanese (ja)
Other versions
JP2000098613A (ja
JP2000098613A5 (OSRAM
Inventor
利明 青合
健一郎 佐藤
Original Assignee
富士フイルムホールディングス株式会社
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Filing date
Publication date
Application filed by 富士フイルムホールディングス株式会社 filed Critical 富士フイルムホールディングス株式会社
Priority to JP27004198A priority Critical patent/JP3856270B2/ja
Priority to US09/392,588 priority patent/US6632586B1/en
Priority to KR1019990040590A priority patent/KR100573887B1/ko
Publication of JP2000098613A publication Critical patent/JP2000098613A/ja
Publication of JP2000098613A5 publication Critical patent/JP2000098613A5/ja
Application granted granted Critical
Publication of JP3856270B2 publication Critical patent/JP3856270B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing
    • Y10S430/111Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Paints Or Removers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP27004198A 1998-09-24 1998-09-24 ポジ型レジスト組成物 Expired - Fee Related JP3856270B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP27004198A JP3856270B2 (ja) 1998-09-24 1998-09-24 ポジ型レジスト組成物
US09/392,588 US6632586B1 (en) 1998-09-24 1999-09-09 Positive resist composition
KR1019990040590A KR100573887B1 (ko) 1998-09-24 1999-09-21 포지티브 레지스트 조성물

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27004198A JP3856270B2 (ja) 1998-09-24 1998-09-24 ポジ型レジスト組成物

Publications (3)

Publication Number Publication Date
JP2000098613A JP2000098613A (ja) 2000-04-07
JP2000098613A5 JP2000098613A5 (OSRAM) 2005-02-24
JP3856270B2 true JP3856270B2 (ja) 2006-12-13

Family

ID=17480717

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27004198A Expired - Fee Related JP3856270B2 (ja) 1998-09-24 1998-09-24 ポジ型レジスト組成物

Country Status (3)

Country Link
US (1) US6632586B1 (OSRAM)
JP (1) JP3856270B2 (OSRAM)
KR (1) KR100573887B1 (OSRAM)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6692888B1 (en) * 1999-10-07 2004-02-17 Shipley Company, L.L.C. Copolymers having nitrile and alicyclic leaving groups and photoresist compositions comprising same
JP4568278B2 (ja) * 2004-03-08 2010-10-27 三菱レイヨン株式会社 レジスト材料、レジスト組成物、およびパターン製造方法、並びにレジスト用重合体用原料化合物
US7700259B2 (en) * 2004-04-13 2010-04-20 Tokyo Ohka Kogyo Co., Ltd. Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern
WO2005116768A1 (ja) * 2004-05-31 2005-12-08 Tokyo Ohka Kogyo Co., Ltd. ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
JP4524154B2 (ja) * 2004-08-18 2010-08-11 富士フイルム株式会社 化学増幅型レジスト組成物及びそれを用いたパターン形成方法
KR101156975B1 (ko) * 2005-06-24 2012-06-20 주식회사 동진쎄미켐 포토레지스트용 폴리머 및 이를 포함하는 포토레지스트 조성물
TW200702924A (en) * 2005-06-24 2007-01-16 Dongjin Semichem Co Ltd Photoresist monomer, polymer thereof and photoresist composition including the same
KR101190527B1 (ko) 2005-08-12 2012-10-16 주식회사 동진쎄미켐 포토레지스트용 폴리머 및 이를 포함하는 포토레지스트조성물
JP5562651B2 (ja) * 2008-01-21 2014-07-30 株式会社ダイセル 化学増幅型フォトレジスト用樹脂及びその製造方法
WO2012014435A1 (ja) 2010-07-30 2012-02-02 三菱瓦斯化学株式会社 化合物、感放射線性組成物及びレジストパターン形成方法
WO2012046880A1 (ja) * 2010-10-08 2012-04-12 日本カーバイド工業株式会社 新規なジビニルエーテル化合物及びその製造方法
JP5986826B2 (ja) * 2012-06-29 2016-09-06 株式会社ダイセル 高分子化合物、フォトレジスト用樹脂組成物、及び半導体の製造方法
WO2014002810A1 (ja) * 2012-06-29 2014-01-03 株式会社ダイセル 高分子化合物、フォトレジスト用樹脂組成物、及び半導体の製造方法
JP5986825B2 (ja) * 2012-06-29 2016-09-06 株式会社ダイセル 高分子化合物、フォトレジスト用樹脂組成物、及び半導体の製造方法
US20170058079A1 (en) 2015-08-24 2017-03-02 A School Corporation Kansai University Polymer compound, radiation sensitive composition and pattern forming method
US20170059989A1 (en) 2015-08-24 2017-03-02 A School Corporation Kansai University Polymer compound, radiation sensitive composition and pattern forming method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2715881B2 (ja) * 1993-12-28 1998-02-18 日本電気株式会社 感光性樹脂組成物およびパターン形成方法
JPH0915846A (ja) * 1995-06-30 1997-01-17 Nec Corp フォトレジスト組成物
US5942367A (en) * 1996-04-24 1999-08-24 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition, pattern forming method, and method for preparing polymer having a crosslinking group
JP3528512B2 (ja) * 1996-04-24 2004-05-17 信越化学工業株式会社 架橋基を有する高分子化合物の製造方法
JP3865474B2 (ja) * 1996-08-20 2007-01-10 東京応化工業株式会社 ポジ型レジスト組成物

Also Published As

Publication number Publication date
JP2000098613A (ja) 2000-04-07
KR100573887B1 (ko) 2006-04-26
US6632586B1 (en) 2003-10-14
KR20000023329A (ko) 2000-04-25

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