JP2000098613A5 - - Google Patents

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Publication number
JP2000098613A5
JP2000098613A5 JP1998270041A JP27004198A JP2000098613A5 JP 2000098613 A5 JP2000098613 A5 JP 2000098613A5 JP 1998270041 A JP1998270041 A JP 1998270041A JP 27004198 A JP27004198 A JP 27004198A JP 2000098613 A5 JP2000098613 A5 JP 2000098613A5
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JP
Japan
Prior art keywords
group
hydrogen atom
resist composition
acid
independently represents
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998270041A
Other languages
English (en)
Japanese (ja)
Other versions
JP3856270B2 (ja
JP2000098613A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP27004198A priority Critical patent/JP3856270B2/ja
Priority claimed from JP27004198A external-priority patent/JP3856270B2/ja
Priority to US09/392,588 priority patent/US6632586B1/en
Priority to KR1019990040590A priority patent/KR100573887B1/ko
Publication of JP2000098613A publication Critical patent/JP2000098613A/ja
Publication of JP2000098613A5 publication Critical patent/JP2000098613A5/ja
Application granted granted Critical
Publication of JP3856270B2 publication Critical patent/JP3856270B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP27004198A 1998-09-24 1998-09-24 ポジ型レジスト組成物 Expired - Fee Related JP3856270B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP27004198A JP3856270B2 (ja) 1998-09-24 1998-09-24 ポジ型レジスト組成物
US09/392,588 US6632586B1 (en) 1998-09-24 1999-09-09 Positive resist composition
KR1019990040590A KR100573887B1 (ko) 1998-09-24 1999-09-21 포지티브 레지스트 조성물

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27004198A JP3856270B2 (ja) 1998-09-24 1998-09-24 ポジ型レジスト組成物

Publications (3)

Publication Number Publication Date
JP2000098613A JP2000098613A (ja) 2000-04-07
JP2000098613A5 true JP2000098613A5 (OSRAM) 2005-02-24
JP3856270B2 JP3856270B2 (ja) 2006-12-13

Family

ID=17480717

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27004198A Expired - Fee Related JP3856270B2 (ja) 1998-09-24 1998-09-24 ポジ型レジスト組成物

Country Status (3)

Country Link
US (1) US6632586B1 (OSRAM)
JP (1) JP3856270B2 (OSRAM)
KR (1) KR100573887B1 (OSRAM)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6692888B1 (en) * 1999-10-07 2004-02-17 Shipley Company, L.L.C. Copolymers having nitrile and alicyclic leaving groups and photoresist compositions comprising same
WO2005085301A1 (ja) * 2004-03-08 2005-09-15 Mitsubishi Rayon Co., Ltd. レジスト用重合体、レジスト組成物、およびパターン製造方法、並びにレジスト用重合体用原料化合物
KR100848031B1 (ko) * 2004-04-13 2008-07-23 도오꾜오까고오교 가부시끼가이샤 고분자 화합물, 이 고분자 화합물을 함유하는 포토레지스트조성물, 및 레지스트 패턴 형성 방법
WO2005116768A1 (ja) * 2004-05-31 2005-12-08 Tokyo Ohka Kogyo Co., Ltd. ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
JP4524154B2 (ja) * 2004-08-18 2010-08-11 富士フイルム株式会社 化学増幅型レジスト組成物及びそれを用いたパターン形成方法
KR101190527B1 (ko) 2005-08-12 2012-10-16 주식회사 동진쎄미켐 포토레지스트용 폴리머 및 이를 포함하는 포토레지스트조성물
US7501222B2 (en) * 2005-06-24 2009-03-10 Dongjin Semichem Co., Ltd. Photoresist monomer polymer thereof and photoresist composition including the same
KR101156975B1 (ko) * 2005-06-24 2012-06-20 주식회사 동진쎄미켐 포토레지스트용 폴리머 및 이를 포함하는 포토레지스트 조성물
JP5562651B2 (ja) * 2008-01-21 2014-07-30 株式会社ダイセル 化学増幅型フォトレジスト用樹脂及びその製造方法
CN103052670B (zh) 2010-07-30 2016-03-02 三菱瓦斯化学株式会社 化合物、放射线敏感性组合物和抗蚀图案形成方法
WO2012046880A1 (ja) * 2010-10-08 2012-04-12 日本カーバイド工業株式会社 新規なジビニルエーテル化合物及びその製造方法
JP5986825B2 (ja) * 2012-06-29 2016-09-06 株式会社ダイセル 高分子化合物、フォトレジスト用樹脂組成物、及び半導体の製造方法
CN104379617A (zh) * 2012-06-29 2015-02-25 株式会社大赛璐 高分子化合物、光致抗蚀剂用树脂组合物、及半导体的制造方法
JP5986826B2 (ja) * 2012-06-29 2016-09-06 株式会社ダイセル 高分子化合物、フォトレジスト用樹脂組成物、及び半導体の製造方法
US20170058079A1 (en) 2015-08-24 2017-03-02 A School Corporation Kansai University Polymer compound, radiation sensitive composition and pattern forming method
US20170059989A1 (en) 2015-08-24 2017-03-02 A School Corporation Kansai University Polymer compound, radiation sensitive composition and pattern forming method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2715881B2 (ja) * 1993-12-28 1998-02-18 日本電気株式会社 感光性樹脂組成物およびパターン形成方法
JPH0915846A (ja) * 1995-06-30 1997-01-17 Nec Corp フォトレジスト組成物
JP3528512B2 (ja) * 1996-04-24 2004-05-17 信越化学工業株式会社 架橋基を有する高分子化合物の製造方法
US5942367A (en) * 1996-04-24 1999-08-24 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition, pattern forming method, and method for preparing polymer having a crosslinking group
JP3865474B2 (ja) * 1996-08-20 2007-01-10 東京応化工業株式会社 ポジ型レジスト組成物

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