JP3854640B2 - 半導体素子製造方法 - Google Patents

半導体素子製造方法 Download PDF

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Publication number
JP3854640B2
JP3854640B2 JP53241597A JP53241597A JP3854640B2 JP 3854640 B2 JP3854640 B2 JP 3854640B2 JP 53241597 A JP53241597 A JP 53241597A JP 53241597 A JP53241597 A JP 53241597A JP 3854640 B2 JP3854640 B2 JP 3854640B2
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Japan
Prior art keywords
exposure
pattern
positional deviation
electron beam
error
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Expired - Fee Related
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JP53241597A
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English (en)
Japanese (ja)
Inventor
秀寿 佐藤
義則 中山
正秀 奥村
洋也 太田
徳郎 斎藤
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株式会社 日立製作所
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70458—Mix-and-match, i.e. multiple exposures of the same area using a similar type of exposure apparatus, e.g. multiple exposures using a UV apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
JP53241597A 1996-03-06 1996-03-06 半導体素子製造方法 Expired - Fee Related JP3854640B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1996/000542 WO1997034319A1 (fr) 1996-03-06 1996-03-06 Fabrication de composants a semi-conducteur

Publications (1)

Publication Number Publication Date
JP3854640B2 true JP3854640B2 (ja) 2006-12-06

Family

ID=14153003

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53241597A Expired - Fee Related JP3854640B2 (ja) 1996-03-06 1996-03-06 半導体素子製造方法

Country Status (4)

Country Link
US (1) US6159644A (fr)
EP (1) EP0895279A4 (fr)
JP (1) JP3854640B2 (fr)
WO (1) WO1997034319A1 (fr)

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JP3169068B2 (ja) * 1997-12-04 2001-05-21 日本電気株式会社 電子線露光方法及び半導体ウエハ
JP2000100700A (ja) * 1998-09-22 2000-04-07 Toshiba Corp パターン形成方法およびハイブリッド露光方法
JP2000173897A (ja) * 1998-12-08 2000-06-23 Mitsubishi Electric Corp 露光精度制御方法、装置および記録媒体
JP2001015421A (ja) * 1999-07-01 2001-01-19 Canon Inc データ作成方法およびそれを用いた荷電粒子ビーム描画装置
US6640151B1 (en) 1999-12-22 2003-10-28 Applied Materials, Inc. Multi-tool control system, method and medium
US6696363B2 (en) * 2000-06-06 2004-02-24 Ekc Technology, Inc. Method of and apparatus for substrate pre-treatment
US6708074B1 (en) 2000-08-11 2004-03-16 Applied Materials, Inc. Generic interface builder
EP1182508B1 (fr) * 2000-08-14 2012-12-12 Vistec Electron Beam GmbH Méthode d'exposition d'un arrangement comportant plusieurs niveaux sur une plaquette semiconductrice
JP4511707B2 (ja) * 2000-09-28 2010-07-28 株式会社アドバンテスト 電子ビーム露光装置、露光方法、及び半導体素子製造方法
WO2002035288A1 (fr) * 2000-10-23 2002-05-02 Advanced Micro Devices, Inc. Systeme et procede destines a faciliter l'alignement des plaquettes, permettant d'attenuer les effets de rotation du reticule sur le recouvrement
US6552790B1 (en) 2001-02-20 2003-04-22 Advanced Micro Devices, Inc. System and method for facilitating wafer alignment by mitigating effects of reticle rotation on overlay
US7188142B2 (en) 2000-11-30 2007-03-06 Applied Materials, Inc. Dynamic subject information generation in message services of distributed object systems in a semiconductor assembly line facility
US6493064B2 (en) * 2001-02-28 2002-12-10 Creo Il, Ltd. Method and apparatus for registration control in production by imaging
US7698012B2 (en) 2001-06-19 2010-04-13 Applied Materials, Inc. Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing
US7160739B2 (en) 2001-06-19 2007-01-09 Applied Materials, Inc. Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles
US20030199112A1 (en) 2002-03-22 2003-10-23 Applied Materials, Inc. Copper wiring module control
US7262860B2 (en) * 2002-07-29 2007-08-28 Zygo Corporation Compensation for errors in off-axis interferometric measurements
US7274462B2 (en) * 2002-09-09 2007-09-25 Zygo Corporation In SITU measurement and compensation of errors due to imperfections in interferometer optics in displacement measuring interferometry systems
JP4833549B2 (ja) * 2002-09-09 2011-12-07 ザイゴ コーポレーション 干渉計の誤差の測定および補償
AU2003290932A1 (en) 2002-11-15 2004-06-15 Applied Materials, Inc. Method, system and medium for controlling manufacture process having multivariate input parameters
JP4546255B2 (ja) * 2002-12-12 2010-09-15 ザイゴ コーポレーション フォトリソグラフィック露光サイクルの間のステージ・ミラー歪の工程内補正
JP2004219876A (ja) * 2003-01-17 2004-08-05 Toppan Printing Co Ltd 重ね描画時の補正描画方法
US6777147B1 (en) 2003-05-21 2004-08-17 International Business Machines Corporation Method for evaluating the effects of multiple exposure processes in lithography
US7286240B2 (en) 2003-06-19 2007-10-23 Zygo Corporation Compensation for geometric effects of beam misalignments in plane mirror interferometer metrology systems
US7327465B2 (en) * 2003-06-19 2008-02-05 Zygo Corporation Compensation for effects of beam misalignments in interferometer metrology systems
JP4203649B2 (ja) * 2003-09-05 2009-01-07 株式会社オーク製作所 多重露光描画方法及び多重露光描画装置
WO2005045529A2 (fr) * 2003-11-04 2005-05-19 Zygo Corporation Caracterisation et compensation d'erreurs dans un systeme interferometrique multiaxial
WO2005067815A1 (fr) * 2004-01-05 2005-07-28 Zygo Corporation Alignement d'etages dans des outils lithographiques
WO2005067579A2 (fr) * 2004-01-06 2005-07-28 Zygo Corporation Interferometre a plusieurs axes et procedes et systemes l'utilisant
US7280223B2 (en) * 2004-04-22 2007-10-09 Zygo Corporation Interferometry systems and methods of using interferometry systems
US7375823B2 (en) * 2004-04-22 2008-05-20 Zygo Corporation Interferometry systems and methods of using interferometry systems
US8084400B2 (en) * 2005-10-11 2011-12-27 Intermolecular, Inc. Methods for discretized processing and process sequence integration of regions of a substrate
WO2006041984A2 (fr) * 2004-10-06 2006-04-20 Zygo Corporation Correction d'erreurs dans des systemes d'interferometrie
WO2006102234A2 (fr) 2005-03-18 2006-09-28 Zygo Corporation Interferometre multiaxial, et procedures et traitement de donnees pour realiser un mappage au moyen d'un miroir
CN100541333C (zh) * 2005-06-28 2009-09-16 中国科学院电工研究所 电子束曝光过程样片步进定位误差动态补偿系统
US7426011B2 (en) 2005-09-12 2008-09-16 Asml Netherlands B.V. Method of calibrating a lithographic apparatus and device manufacturing method
TWI345685B (en) * 2005-09-06 2011-07-21 Asml Netherlands Bv Lithographic method
US7902063B2 (en) * 2005-10-11 2011-03-08 Intermolecular, Inc. Methods for discretized formation of masking and capping layers on a substrate
US8776717B2 (en) * 2005-10-11 2014-07-15 Intermolecular, Inc. Systems for discretized processing of regions of a substrate
US8772772B2 (en) * 2006-05-18 2014-07-08 Intermolecular, Inc. System and method for increasing productivity of combinatorial screening
WO2007095194A2 (fr) * 2006-02-10 2007-08-23 Intermolecular, Inc. Méthode et dispositif pour variation combinatoire de matériaux, procédés types et séquence de procédé
JP2007329267A (ja) * 2006-06-07 2007-12-20 Toshiba Corp 荷電粒子線描画装置及び荷電粒子線描画方法
US8011317B2 (en) * 2006-12-29 2011-09-06 Intermolecular, Inc. Advanced mixing system for integrated tool having site-isolated reactors
JP2010060990A (ja) * 2008-09-05 2010-03-18 Hitachi High-Technologies Corp 露光装置、露光方法、及び表示用パネル基板の製造方法
KR101854828B1 (ko) * 2009-05-20 2018-05-04 마퍼 리쏘그라피 아이피 비.브이. 듀얼 패스 스캐닝
US9177219B2 (en) * 2010-07-09 2015-11-03 Asml Netherlands B.V. Method of calibrating a lithographic apparatus, device manufacturing method and associated data processing apparatus and computer program product
JP2018056143A (ja) * 2014-12-26 2018-04-05 株式会社日立ハイテクノロジーズ 露光条件評価装置
US11852975B2 (en) 2020-07-08 2023-12-26 International Business Machines Corporation Electron beam lithography with dynamic fin overlay correction

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JPS62229830A (ja) * 1986-03-28 1987-10-08 Jeol Ltd ハイブリツド用荷電粒子ビ−ム描画装置
US4812661A (en) * 1986-08-20 1989-03-14 Hewlett-Packard Company Method and apparatus for hybrid I.C. lithography
JP2659203B2 (ja) * 1988-01-27 1997-09-30 日本電気株式会社 パターン形成方法
JPH01200622A (ja) * 1988-02-04 1989-08-11 Mitsubishi Electric Corp 電子ビーム露光方法
JP3892565B2 (ja) * 1997-02-28 2007-03-14 株式会社東芝 パターン形成方法

Also Published As

Publication number Publication date
WO1997034319A1 (fr) 1997-09-18
EP0895279A4 (fr) 2006-04-19
EP0895279A1 (fr) 1999-02-03
US6159644A (en) 2000-12-12

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