JP3848841B2 - 表面プラズモンレーザ構造を有する装置 - Google Patents

表面プラズモンレーザ構造を有する装置 Download PDF

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Publication number
JP3848841B2
JP3848841B2 JP2001046367A JP2001046367A JP3848841B2 JP 3848841 B2 JP3848841 B2 JP 3848841B2 JP 2001046367 A JP2001046367 A JP 2001046367A JP 2001046367 A JP2001046367 A JP 2001046367A JP 3848841 B2 JP3848841 B2 JP 3848841B2
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laser
active region
surface plasmon
metal
grating
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JP2001291929A5 (enExample
JP2001291929A (ja
Inventor
カパッソ フェデリコ
イー チョ アルフレッド
エフ グマク クライル
リー ハッチンソン アルバート
リー シブコ デボラ
トレディカッシ アレッサンドロ
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ルーセント テクノロジーズ インコーポレーテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1046—Comprising interactions between photons and plasmons, e.g. by a corrugated surface

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
JP2001046367A 2000-02-24 2001-02-22 表面プラズモンレーザ構造を有する装置 Expired - Fee Related JP3848841B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/512,566 US6501783B1 (en) 2000-02-24 2000-02-24 Distributed feedback surface plasmon laser
US09/512566 2000-02-24

Publications (3)

Publication Number Publication Date
JP2001291929A JP2001291929A (ja) 2001-10-19
JP2001291929A5 JP2001291929A5 (enExample) 2004-10-14
JP3848841B2 true JP3848841B2 (ja) 2006-11-22

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JP2001046367A Expired - Fee Related JP3848841B2 (ja) 2000-02-24 2001-02-22 表面プラズモンレーザ構造を有する装置

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US (1) US6501783B1 (enExample)
EP (1) EP1133035A3 (enExample)
JP (1) JP3848841B2 (enExample)
CN (1) CN1180518C (enExample)
CA (1) CA2331194C (enExample)

Cited By (1)

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JP2009121833A (ja) * 2007-11-12 2009-06-04 Mitsubishi Electric Corp センシング方法およびそのセンシング方法を応用したセンサ、マーカー

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JP4599546B2 (ja) * 2001-03-12 2010-12-15 独立行政法人科学技術振興機構 低次元プラズモン発光装置
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FR2845208A1 (fr) * 2002-10-01 2004-04-02 Thales Sa Composants optoelectroniques a guidage de l'onde optique par ruban metallique
CA2453760A1 (en) 2002-12-20 2004-06-20 Spectalis Corp. External-cavity lasers
JP4130163B2 (ja) * 2003-09-29 2008-08-06 三洋電機株式会社 半導体発光素子
JP4326297B2 (ja) * 2003-09-30 2009-09-02 シャープ株式会社 モノリシック多波長レーザ素子およびその製造方法
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US7302129B2 (en) * 2004-10-12 2007-11-27 Lockheed Martin Corporation Optical transistor with sub-wavelength aperture
JP4536490B2 (ja) * 2004-11-15 2010-09-01 浜松ホトニクス株式会社 レーザ装置及びその制御方法
JP4634956B2 (ja) * 2006-04-14 2011-02-16 日本電信電話株式会社 光吸収測定装置
JP5196750B2 (ja) * 2006-08-25 2013-05-15 キヤノン株式会社 発振素子
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US7583882B2 (en) * 2006-11-10 2009-09-01 University Of Alabama In Huntsville Waveguides for ultra-long range surface plasmon-polariton propagation
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US8238702B2 (en) * 2008-06-05 2012-08-07 Colorado School Of Mines Hybrid dielectric/surface plasmon polariton waveguide with grating coupling
DE102008045980A1 (de) * 2008-09-05 2010-06-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Testverfahren zur On-Wafer-Charakterisierung von langwelligen Halbleiterlasern
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US8227793B2 (en) 2009-07-06 2012-07-24 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting the visible light spectrum
US8748862B2 (en) * 2009-07-06 2014-06-10 University Of Seoul Industry Cooperation Foundation Compound semiconductors
US7995879B2 (en) * 2009-07-28 2011-08-09 The Invention Science Fund I, Llc Surface state gain
US8249401B2 (en) * 2009-07-28 2012-08-21 The Invention Science Fund I Llc Surface state gain
US8368990B2 (en) 2009-08-21 2013-02-05 University Of Seoul Industry Cooperation Foundation Polariton mode optical switch with composite structure
US8023546B2 (en) * 2009-09-22 2011-09-20 Palo Alto Research Center Incorporated Semiconductor laser with integrated contact and waveguide
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CN101847828B (zh) * 2010-05-07 2012-03-28 中国科学院半导体研究所 垂直发射量子级联激光器结构
CN101882752B (zh) * 2010-06-28 2011-11-30 北京航空航天大学 一种表面等离子体纳米激光器
WO2012015990A2 (en) * 2010-07-27 2012-02-02 The Regents Of The University Of California Plasmon lasers at deep subwavelength scale
CN102148476B (zh) * 2011-03-08 2012-06-27 东南大学 深度亚波长表面等离子体激元微腔激光器
US8805147B2 (en) * 2011-05-17 2014-08-12 Canon Kabushiki Kaisha Waveguide, apparatus including the waveguide, and method of manufacturing the waveguide
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CN105765804B (zh) * 2013-11-30 2019-06-18 统雷量子电子有限公司 量子级联激光器
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KR102360025B1 (ko) 2014-10-16 2022-02-08 삼성전자주식회사 비정질 탄소원자층의 형성방법 및 비정질 탄소원자층을 포함하는 전자소자
EP3304660B1 (en) 2015-06-05 2022-10-26 The Government of the United States of America as represented by the Secretary of the Navy Interband cascade lasers with low-fill factor top contact for reduced loss
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Publication number Publication date
CA2331194A1 (en) 2001-08-24
CN1180518C (zh) 2004-12-15
EP1133035A3 (en) 2001-09-26
EP1133035A2 (en) 2001-09-12
JP2001291929A (ja) 2001-10-19
US6501783B1 (en) 2002-12-31
CA2331194C (en) 2004-05-04
CN1322042A (zh) 2001-11-14

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