ITTO20020274A1 - Laser thz a semiconduttore incorporante guida d'onda a confinamento plasmonico controllato. - Google Patents

Laser thz a semiconduttore incorporante guida d'onda a confinamento plasmonico controllato.

Info

Publication number
ITTO20020274A1
ITTO20020274A1 IT2002TO000274A ITTO20020274A ITTO20020274A1 IT TO20020274 A1 ITTO20020274 A1 IT TO20020274A1 IT 2002TO000274 A IT2002TO000274 A IT 2002TO000274A IT TO20020274 A ITTO20020274 A IT TO20020274A IT TO20020274 A1 ITTO20020274 A1 IT TO20020274A1
Authority
IT
Italy
Prior art keywords
interface
border
radiation
plasmon modes
wave guide
Prior art date
Application number
IT2002TO000274A
Other languages
English (en)
Inventor
Fabio Beltram
Alessandro Tredicucci
Harvey Edward Beere
Alexander Giles Davies
Ruedeger Koehler
Edmund Harold Linfield
Original Assignee
Infm Istituto Nazionela Per La
Uni Di Cambridge
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infm Istituto Nazionela Per La, Uni Di Cambridge filed Critical Infm Istituto Nazionela Per La
Priority to IT2002TO000274A priority Critical patent/ITTO20020274A1/it
Publication of ITTO20020274A0 publication Critical patent/ITTO20020274A0/it
Priority to AT03744952T priority patent/ATE329394T1/de
Priority to US10/508,996 priority patent/US7382806B2/en
Priority to EP03744952A priority patent/EP1500176B1/en
Priority to DE60305910T priority patent/DE60305910T2/de
Priority to JP2003579329A priority patent/JP2005521266A/ja
Priority to PCT/IB2003/001080 priority patent/WO2003081736A1/en
Priority to AU2003209936A priority patent/AU2003209936A1/en
Publication of ITTO20020274A1 publication Critical patent/ITTO20020274A1/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1046—Comprising interactions between photons and plasmons, e.g. by a corrugated surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
IT2002TO000274A 2002-03-27 2002-03-27 Laser thz a semiconduttore incorporante guida d'onda a confinamento plasmonico controllato. ITTO20020274A1 (it)

Priority Applications (8)

Application Number Priority Date Filing Date Title
IT2002TO000274A ITTO20020274A1 (it) 2002-03-27 2002-03-27 Laser thz a semiconduttore incorporante guida d'onda a confinamento plasmonico controllato.
AT03744952T ATE329394T1 (de) 2002-03-27 2003-03-24 Thz-halbleiterlaser mit einem gesteuerten plasmon-confinement-wellenleiter
US10/508,996 US7382806B2 (en) 2002-03-27 2003-03-24 THz semiconductor laser incorporating a controlled plasmon confinement waveguide
EP03744952A EP1500176B1 (en) 2002-03-27 2003-03-24 THz SEMICONDUCTOR LASER INCORPORATING A CONTROLLED PLASMON CONFINEMENT WAVEGUIDE
DE60305910T DE60305910T2 (de) 2002-03-27 2003-03-24 Thz-halbleiterlaser mit einem gesteuerten plasmon-confinement-wellenleiter
JP2003579329A JP2005521266A (ja) 2002-03-27 2003-03-24 コントロールされたプラズモン閉じ込め導波路を備えたテラヘルツ半導体レーザ
PCT/IB2003/001080 WO2003081736A1 (en) 2002-03-27 2003-03-24 THz SEMICONDUCTOR LASER INCORPORATING A CONTROLLED PLASMON CONFINEMENT WAVEGUIDE
AU2003209936A AU2003209936A1 (en) 2002-03-27 2003-03-24 Thz semiconductor laser incorporating a controlled plasmon confinement waveguide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT2002TO000274A ITTO20020274A1 (it) 2002-03-27 2002-03-27 Laser thz a semiconduttore incorporante guida d'onda a confinamento plasmonico controllato.

Publications (2)

Publication Number Publication Date
ITTO20020274A0 ITTO20020274A0 (it) 2002-03-27
ITTO20020274A1 true ITTO20020274A1 (it) 2003-09-29

Family

ID=27638959

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2002TO000274A ITTO20020274A1 (it) 2002-03-27 2002-03-27 Laser thz a semiconduttore incorporante guida d'onda a confinamento plasmonico controllato.

Country Status (8)

Country Link
US (1) US7382806B2 (it)
EP (1) EP1500176B1 (it)
JP (1) JP2005521266A (it)
AT (1) ATE329394T1 (it)
AU (1) AU2003209936A1 (it)
DE (1) DE60305910T2 (it)
IT (1) ITTO20020274A1 (it)
WO (1) WO2003081736A1 (it)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2409104B (en) * 2003-12-08 2006-04-12 Teraview Ltd A laser
US8619832B2 (en) 2008-05-08 2013-12-31 Massachusetts Institute Of Technology Lens coupled quantum cascade laser
US8809834B2 (en) 2009-07-06 2014-08-19 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting long wavelength radiation
US8929417B2 (en) 2009-12-21 2015-01-06 The Board Of Regents Of The University Of Oklahoma Semiconductor interband lasers and method of forming
JP5636773B2 (ja) 2010-07-06 2014-12-10 ソニー株式会社 半導体レーザ
CN102176463B (zh) * 2010-12-21 2012-12-12 上海电机学院 太赫兹光子片上控制系统及其控制方法
JP5355599B2 (ja) 2011-01-19 2013-11-27 株式会社東芝 半導体発光装置およびその製造方法
SG11201508691RA (en) * 2013-02-27 2015-11-27 Univ North Carolina Incoherent type-iii materials for charge carriers control devices
JP5764173B2 (ja) * 2013-08-26 2015-08-12 株式会社東芝 半導体発光装置
US9337617B2 (en) 2014-02-24 2016-05-10 The Board Of Regents Of The University Of Oklahoma Tunable semiconductor lasers
JP6190407B2 (ja) * 2015-03-09 2017-08-30 株式会社東芝 半導体発光装置およびその製造方法
CN104882787B (zh) * 2015-06-03 2018-12-07 中国科学院半导体研究所 表面等离子体调制的倒装vcsel激光器及其制造方法
US10203526B2 (en) 2015-07-06 2019-02-12 The University Of North Carolina At Charlotte Type III hetrojunction—broken gap HJ
JP2017157865A (ja) * 2017-06-07 2017-09-07 株式会社東芝 半導体発光装置およびその製造方法
US11031753B1 (en) * 2017-11-13 2021-06-08 The Government Of The United States Of America As Represented By The Secretary Of The Air Force Extracting the fundamental mode in broad area quantum cascade lasers
CN112736643B (zh) * 2021-01-04 2022-04-08 北京邮电大学 太赫兹信号垂直腔面发射器及其制作方法
CN113378099B (zh) * 2021-06-29 2024-05-17 西安理工大学 激光在等离子体中传播的反射系数和透射系数计算方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5502787A (en) * 1995-05-22 1996-03-26 At&T Corp. Article comprising a semiconductor waveguide structure
US6301282B1 (en) * 1998-07-29 2001-10-09 Lucent Technologies Inc. Long wavelength semiconductor lasers incorporating waveguides based on surface plasmons
US6501783B1 (en) * 2000-02-24 2002-12-31 Lucent Technologies Inc. Distributed feedback surface plasmon laser
US6829269B2 (en) * 2002-05-21 2004-12-07 University Of Massachusetts Systems and methods using phonon mediated intersubband laser
US20060153262A1 (en) * 2002-10-10 2006-07-13 Teraview Limited Terahertz quantum cascade laser

Also Published As

Publication number Publication date
US7382806B2 (en) 2008-06-03
ITTO20020274A0 (it) 2002-03-27
WO2003081736A8 (en) 2004-02-26
DE60305910T2 (de) 2007-02-01
WO2003081736A1 (en) 2003-10-02
JP2005521266A (ja) 2005-07-14
EP1500176A1 (en) 2005-01-26
AU2003209936A8 (en) 2003-10-08
AU2003209936A1 (en) 2003-10-08
ATE329394T1 (de) 2006-06-15
EP1500176B1 (en) 2006-06-07
US20050117618A1 (en) 2005-06-02
DE60305910D1 (de) 2006-07-20

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