CN1180518C - 分布式反馈表面等离子体振子激光器 - Google Patents

分布式反馈表面等离子体振子激光器 Download PDF

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Publication number
CN1180518C
CN1180518C CNB011049170A CN01104917A CN1180518C CN 1180518 C CN1180518 C CN 1180518C CN B011049170 A CNB011049170 A CN B011049170A CN 01104917 A CN01104917 A CN 01104917A CN 1180518 C CN1180518 C CN 1180518C
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China
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laser
article
surface plasmon
grating
metal
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Expired - Fee Related
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CNB011049170A
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Chinese (zh)
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CN1322042A (zh
Inventor
�Ƶ���ˡ�����ɪ
菲德里克·卡帕瑟
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阿尔弗雷德·伊·乔
F
克莱尔·F·格马奇尔
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阿伯特·L·胡奇森
L
德伯拉·L·思克
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阿勒桑德罗·特里蒂库塞
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Origin Asset Group Co ltd
Nokia of America Corp
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Lucent Technologies Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1046—Comprising interactions between photons and plasmons, e.g. by a corrugated surface

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
CNB011049170A 2000-02-24 2001-02-23 分布式反馈表面等离子体振子激光器 Expired - Fee Related CN1180518C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/512,566 US6501783B1 (en) 2000-02-24 2000-02-24 Distributed feedback surface plasmon laser
US09/512,566 2000-02-24

Publications (2)

Publication Number Publication Date
CN1322042A CN1322042A (zh) 2001-11-14
CN1180518C true CN1180518C (zh) 2004-12-15

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CNB011049170A Expired - Fee Related CN1180518C (zh) 2000-02-24 2001-02-23 分布式反馈表面等离子体振子激光器

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US (1) US6501783B1 (enExample)
EP (1) EP1133035A3 (enExample)
JP (1) JP3848841B2 (enExample)
CN (1) CN1180518C (enExample)
CA (1) CA2331194C (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101847828A (zh) * 2010-05-07 2010-09-29 中国科学院半导体研究所 垂直发射量子级联激光器结构
CN105765804A (zh) * 2013-11-30 2016-07-13 统雷量子电子有限公司 量子级联激光器

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US7043134B2 (en) 1999-12-23 2006-05-09 Spectalis Corp. Thermo-optic plasmon-polariton devices
US6782020B2 (en) * 2000-09-08 2004-08-24 The Texas A&M University System Infrared generation in semiconductor lasers
US6690699B2 (en) * 2001-03-02 2004-02-10 Lucent Technologies Inc Quantum cascade laser with relaxation-stabilized injection
JP4599546B2 (ja) * 2001-03-12 2010-12-15 独立行政法人科学技術振興機構 低次元プラズモン発光装置
EP1283571B1 (de) 2001-08-06 2015-01-14 nanoplus GmbH Nanosystems and Technologies Laser mit schwach gekoppeltem Gitterbereich
EP1343232B1 (en) 2002-03-08 2007-05-02 nanoplus GmbH Nanosystems and Technologies A semiconductor laser array with a lattice structure
ITTO20020274A1 (it) * 2002-03-27 2003-09-29 Infm Istituto Nazionela Per La Laser thz a semiconduttore incorporante guida d'onda a confinamento plasmonico controllato.
FR2845208A1 (fr) * 2002-10-01 2004-04-02 Thales Sa Composants optoelectroniques a guidage de l'onde optique par ruban metallique
CA2453760A1 (en) 2002-12-20 2004-06-20 Spectalis Corp. External-cavity lasers
JP4130163B2 (ja) * 2003-09-29 2008-08-06 三洋電機株式会社 半導体発光素子
JP4326297B2 (ja) * 2003-09-30 2009-09-02 シャープ株式会社 モノリシック多波長レーザ素子およびその製造方法
US7301263B2 (en) * 2004-05-28 2007-11-27 Applied Materials, Inc. Multiple electron beam system with electron transmission gates
US7301977B2 (en) * 2004-06-10 2007-11-27 Nanoplus Gmbh Tuneable unipolar lasers
US7302129B2 (en) * 2004-10-12 2007-11-27 Lockheed Martin Corporation Optical transistor with sub-wavelength aperture
JP4536490B2 (ja) * 2004-11-15 2010-09-01 浜松ホトニクス株式会社 レーザ装置及びその制御方法
JP4634956B2 (ja) * 2006-04-14 2011-02-16 日本電信電話株式会社 光吸収測定装置
JP5196750B2 (ja) * 2006-08-25 2013-05-15 キヤノン株式会社 発振素子
CN100405681C (zh) * 2006-09-08 2008-07-23 中国科学院上海微系统与信息技术研究所 可调谐分布反馈量子级联激光器的波导与光栅的结构及所述光栅的制备方法
US7583882B2 (en) * 2006-11-10 2009-09-01 University Of Alabama In Huntsville Waveguides for ultra-long range surface plasmon-polariton propagation
ATE509398T1 (de) * 2007-03-16 2011-05-15 Harvard College Verfahren und vorrichtung zur erzeugung einer terahertz-strahlung
JP4871816B2 (ja) * 2007-08-31 2012-02-08 キヤノン株式会社 レーザ素子
US8009716B2 (en) * 2007-10-29 2011-08-30 The Aerospace Corporation Plasmon stabilized unimodal laser diodes
JP5136008B2 (ja) * 2007-11-12 2013-02-06 三菱電機株式会社 センサ
US8238702B2 (en) * 2008-06-05 2012-08-07 Colorado School Of Mines Hybrid dielectric/surface plasmon polariton waveguide with grating coupling
DE102008045980A1 (de) * 2008-09-05 2010-06-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Testverfahren zur On-Wafer-Charakterisierung von langwelligen Halbleiterlasern
US8809834B2 (en) * 2009-07-06 2014-08-19 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting long wavelength radiation
US8227793B2 (en) 2009-07-06 2012-07-24 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting the visible light spectrum
US8748862B2 (en) * 2009-07-06 2014-06-10 University Of Seoul Industry Cooperation Foundation Compound semiconductors
US7995879B2 (en) * 2009-07-28 2011-08-09 The Invention Science Fund I, Llc Surface state gain
US8249401B2 (en) * 2009-07-28 2012-08-21 The Invention Science Fund I Llc Surface state gain
US8368990B2 (en) 2009-08-21 2013-02-05 University Of Seoul Industry Cooperation Foundation Polariton mode optical switch with composite structure
US8023546B2 (en) * 2009-09-22 2011-09-20 Palo Alto Research Center Incorporated Semiconductor laser with integrated contact and waveguide
US8368047B2 (en) * 2009-10-27 2013-02-05 University Of Seoul Industry Cooperation Foundation Semiconductor device
CN101882752B (zh) * 2010-06-28 2011-11-30 北京航空航天大学 一种表面等离子体纳米激光器
WO2012015990A2 (en) * 2010-07-27 2012-02-02 The Regents Of The University Of California Plasmon lasers at deep subwavelength scale
CN102148476B (zh) * 2011-03-08 2012-06-27 东南大学 深度亚波长表面等离子体激元微腔激光器
US8805147B2 (en) * 2011-05-17 2014-08-12 Canon Kabushiki Kaisha Waveguide, apparatus including the waveguide, and method of manufacturing the waveguide
US9389344B2 (en) 2011-06-28 2016-07-12 Colorado School Of Mines Spectroscopic polarimeter
US8848756B2 (en) 2011-09-16 2014-09-30 Samsung Electronics Co., Ltd. Surface plasmon laser
US9088126B2 (en) 2013-10-17 2015-07-21 The Trustees Of Princeton University Single-mode quantum cascade lasers with enhanced tuning range
CN103532013B (zh) * 2013-10-23 2015-12-30 中国科学院半导体研究所 一种低发散角的面发射量子级联激光器结构
DE102014106209B3 (de) * 2014-05-05 2015-08-27 Nanoplus Nanosystems And Technologies Gmbh Interbandkaskadenlaser sowie Verfahren zur Herstellung eines Interbandkaskadenlasers umfassend ein Rückkopplungselement
CN104157934B (zh) * 2014-07-21 2016-05-04 南京航空航天大学 一种超宽带人工表面等离子滤波器
CN104267503B (zh) * 2014-09-30 2016-08-17 中国科学院半导体研究所 一种改善面发射半导体激光器慢轴远场的金属天线结构
KR102360025B1 (ko) 2014-10-16 2022-02-08 삼성전자주식회사 비정질 탄소원자층의 형성방법 및 비정질 탄소원자층을 포함하는 전자소자
EP3304660B1 (en) 2015-06-05 2022-10-26 The Government of the United States of America as represented by the Secretary of the Navy Interband cascade lasers with low-fill factor top contact for reduced loss
KR102446410B1 (ko) 2015-09-17 2022-09-22 삼성전자주식회사 광전소자 및 이를 포함하는 전자장치
KR102384228B1 (ko) 2015-09-30 2022-04-07 삼성전자주식회사 반도체 레이저 공진기 및 이를 포함하는 반도체 레이저 소자
FR3054734B1 (fr) * 2016-07-27 2018-09-07 Universite Paris Sud Diode laser a retroaction repartie
KR102610832B1 (ko) 2016-08-03 2023-12-06 삼성전자주식회사 메타 광학 소자 및 이의 설계방법
JP6669611B2 (ja) * 2016-08-25 2020-03-18 日本電信電話株式会社 ナノワイヤレーザ
CN108054634B (zh) * 2018-01-03 2020-12-22 长春理工大学 一种窄线宽半导体激光器
US10566764B2 (en) 2018-06-18 2020-02-18 International Business Machines Corporation Plasmonic quantum well laser
CN109244827B (zh) * 2018-09-12 2020-07-24 南京理工大学 一种用于纳米激光器的高斯型金属半导体谐振腔
CN109830889A (zh) * 2019-03-19 2019-05-31 北京工业大学 复合一维光子晶体纳米梁腔表面等离子体激光器
EP3879642B1 (de) 2020-03-13 2025-09-24 Advanced Photonics Applications GmbH Monomodiger halbleiterlaser mit phasenkontrolle
FR3118332B1 (fr) * 2020-12-18 2023-07-14 Commissariat Energie Atomique Laser comprenant un miroir de Bragg distribué et procédé de réalisation
JP7662353B2 (ja) * 2021-02-22 2025-04-15 株式会社東芝 面発光型半導体発光装置
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CN113659430B (zh) * 2021-07-20 2023-04-11 杭州电子科技大学 一种基于半导体增益的低阈值Tamm态等离子激光器
CN116544781A (zh) * 2023-04-13 2023-08-04 中国科学院半导体研究所 一种半导体锁模激光器及其制备方法
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101847828A (zh) * 2010-05-07 2010-09-29 中国科学院半导体研究所 垂直发射量子级联激光器结构
CN101847828B (zh) * 2010-05-07 2012-03-28 中国科学院半导体研究所 垂直发射量子级联激光器结构
CN105765804A (zh) * 2013-11-30 2016-07-13 统雷量子电子有限公司 量子级联激光器
CN105765804B (zh) * 2013-11-30 2019-06-18 统雷量子电子有限公司 量子级联激光器

Also Published As

Publication number Publication date
CA2331194A1 (en) 2001-08-24
EP1133035A3 (en) 2001-09-26
EP1133035A2 (en) 2001-09-12
JP2001291929A (ja) 2001-10-19
US6501783B1 (en) 2002-12-31
CA2331194C (en) 2004-05-04
CN1322042A (zh) 2001-11-14
JP3848841B2 (ja) 2006-11-22

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