JP3788707B2 - 半導体装置およびその作製方法 - Google Patents

半導体装置およびその作製方法 Download PDF

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Publication number
JP3788707B2
JP3788707B2 JP20735499A JP20735499A JP3788707B2 JP 3788707 B2 JP3788707 B2 JP 3788707B2 JP 20735499 A JP20735499 A JP 20735499A JP 20735499 A JP20735499 A JP 20735499A JP 3788707 B2 JP3788707 B2 JP 3788707B2
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Japan
Prior art keywords
insulating film
film
interlayer insulating
transparent conductive
forming
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Expired - Fee Related
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JP20735499A
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English (en)
Japanese (ja)
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JP2001056485A5 (enExample
JP2001056485A (ja
Inventor
久 大谷
美佐子 仲沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Sharp Corp
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Semiconductor Energy Laboratory Co Ltd
Sharp Corp
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Priority to JP20735499A priority Critical patent/JP3788707B2/ja
Publication of JP2001056485A publication Critical patent/JP2001056485A/ja
Publication of JP2001056485A5 publication Critical patent/JP2001056485A5/ja
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Publication of JP3788707B2 publication Critical patent/JP3788707B2/ja
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Expired - Fee Related legal-status Critical Current

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  • Thin Film Transistor (AREA)
JP20735499A 1998-08-06 1999-07-22 半導体装置およびその作製方法 Expired - Fee Related JP3788707B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20735499A JP3788707B2 (ja) 1998-08-06 1999-07-22 半導体装置およびその作製方法

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP23496198 1998-08-06
JP10-234961 1998-08-06
JP10-254097 1998-09-08
JP25409798 1998-09-08
JP16046099 1999-06-08
JP11-160460 1999-06-08
JP20735499A JP3788707B2 (ja) 1998-08-06 1999-07-22 半導体装置およびその作製方法

Publications (3)

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JP2001056485A JP2001056485A (ja) 2001-02-27
JP2001056485A5 JP2001056485A5 (enExample) 2004-11-11
JP3788707B2 true JP3788707B2 (ja) 2006-06-21

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JP20735499A Expired - Fee Related JP3788707B2 (ja) 1998-08-06 1999-07-22 半導体装置およびその作製方法

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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6614083B1 (en) 1999-03-17 2003-09-02 Semiconductor Energy Laboratory Co., Ltd. Wiring material and a semiconductor device having wiring using the material, and the manufacturing method
JP4865142B2 (ja) * 2001-04-04 2012-02-01 セイコーインスツル株式会社 液晶表示素子及びその製造方法
US8305507B2 (en) 2005-02-25 2012-11-06 Samsung Display Co., Ltd. Thin film transistor array panel having improved storage capacitance and manufacturing method thereof
JP2007212499A (ja) 2006-02-07 2007-08-23 Seiko Epson Corp 液晶装置及びプロジェクタ
JP4818839B2 (ja) * 2006-07-19 2011-11-16 株式会社 日立ディスプレイズ 液晶表示装置及びその製造方法
JP5589359B2 (ja) * 2009-01-05 2014-09-17 セイコーエプソン株式会社 電気光学装置及び電子機器
JP5182116B2 (ja) * 2009-01-23 2013-04-10 セイコーエプソン株式会社 電気光学装置及び電子機器
JP5352333B2 (ja) 2009-04-23 2013-11-27 株式会社ジャパンディスプレイ アクティブマトリクス型表示装置
US8866982B2 (en) * 2009-08-20 2014-10-21 Innolux Corporation Display device
JP5987197B2 (ja) * 2012-03-12 2016-09-07 東京瓦斯株式会社 水素分離膜及び水素分離方法
JP2013200574A (ja) * 2013-06-05 2013-10-03 Semiconductor Energy Lab Co Ltd 半導体装置
JP5685633B2 (ja) * 2013-10-08 2015-03-18 株式会社半導体エネルギー研究所 表示装置
JP6457879B2 (ja) * 2015-04-22 2019-01-23 株式会社ジャパンディスプレイ 表示装置及びその製造方法

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JP2001056485A (ja) 2001-02-27

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