JP3775335B2 - 窒化ケイ素質焼結体および窒化ケイ素質焼結体の製造方法、並びにそれを用いた回路基板 - Google Patents
窒化ケイ素質焼結体および窒化ケイ素質焼結体の製造方法、並びにそれを用いた回路基板 Download PDFInfo
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- JP3775335B2 JP3775335B2 JP2002121345A JP2002121345A JP3775335B2 JP 3775335 B2 JP3775335 B2 JP 3775335B2 JP 2002121345 A JP2002121345 A JP 2002121345A JP 2002121345 A JP2002121345 A JP 2002121345A JP 3775335 B2 JP3775335 B2 JP 3775335B2
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- silicon nitride
- sintered body
- thermal conductivity
- particles
- sintering
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- 229910052581 Si3N4 Inorganic materials 0.000 title claims description 189
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims description 188
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000002245 particle Substances 0.000 claims description 99
- 238000005245 sintering Methods 0.000 claims description 57
- 239000000843 powder Substances 0.000 claims description 49
- 229910052760 oxygen Inorganic materials 0.000 claims description 33
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 32
- 239000001301 oxygen Substances 0.000 claims description 32
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 30
- 239000011777 magnesium Substances 0.000 claims description 25
- 238000010438 heat treatment Methods 0.000 claims description 22
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 21
- 239000000395 magnesium oxide Substances 0.000 claims description 21
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 21
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 239000012298 atmosphere Substances 0.000 claims description 5
- 239000010419 fine particle Substances 0.000 description 54
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- 239000000758 substrate Substances 0.000 description 27
- 239000012071 phase Substances 0.000 description 20
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- 229910052710 silicon Inorganic materials 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 9
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- 230000002093 peripheral effect Effects 0.000 description 8
- 229910052688 Gadolinium Inorganic materials 0.000 description 7
- 229910052769 Ytterbium Inorganic materials 0.000 description 7
- 238000005452 bending Methods 0.000 description 7
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- 239000000919 ceramic Substances 0.000 description 6
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- 230000035939 shock Effects 0.000 description 6
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- FIXNOXLJNSSSLJ-UHFFFAOYSA-N ytterbium(III) oxide Inorganic materials O=[Yb]O[Yb]=O FIXNOXLJNSSSLJ-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
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- 235000012245 magnesium oxide Nutrition 0.000 description 5
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
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- 229910052802 copper Inorganic materials 0.000 description 4
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
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- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 239000011812 mixed powder Substances 0.000 description 4
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 4
- 238000013001 point bending Methods 0.000 description 4
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- 229910052692 Dysprosium Inorganic materials 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
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- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 3
- 238000001889 high-resolution electron micrograph Methods 0.000 description 3
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- NIQCNGHVCWTJSM-UHFFFAOYSA-N Dimethyl phthalate Chemical compound COC(=O)C1=CC=CC=C1C(=O)OC NIQCNGHVCWTJSM-UHFFFAOYSA-N 0.000 description 2
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- 208000025599 Heat Stress disease Diseases 0.000 description 2
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- 229910052779 Neodymium Inorganic materials 0.000 description 2
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- 229910018557 Si O Inorganic materials 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- PZZOEXPDTYIBPI-UHFFFAOYSA-N 2-[[2-(4-hydroxyphenyl)ethylamino]methyl]-3,4-dihydro-2H-naphthalen-1-one Chemical compound C1=CC(O)=CC=C1CCNCC1C(=O)C2=CC=CC=C2CC1 PZZOEXPDTYIBPI-UHFFFAOYSA-N 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
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- 238000003917 TEM image Methods 0.000 description 1
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- FBSAITBEAPNWJG-UHFFFAOYSA-N dimethyl phthalate Natural products CC(=O)OC1=CC=CC=C1OC(C)=O FBSAITBEAPNWJG-UHFFFAOYSA-N 0.000 description 1
- 229960001826 dimethylphthalate Drugs 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002121345A JP3775335B2 (ja) | 2002-04-23 | 2002-04-23 | 窒化ケイ素質焼結体および窒化ケイ素質焼結体の製造方法、並びにそれを用いた回路基板 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002121345A JP3775335B2 (ja) | 2002-04-23 | 2002-04-23 | 窒化ケイ素質焼結体および窒化ケイ素質焼結体の製造方法、並びにそれを用いた回路基板 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005373302A Division JP4518020B2 (ja) | 2005-12-26 | 2005-12-26 | 窒化ケイ素質焼結体およびそれを用いた回路基板。 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003313079A JP2003313079A (ja) | 2003-11-06 |
| JP2003313079A5 JP2003313079A5 (enExample) | 2005-10-06 |
| JP3775335B2 true JP3775335B2 (ja) | 2006-05-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2002121345A Expired - Lifetime JP3775335B2 (ja) | 2002-04-23 | 2002-04-23 | 窒化ケイ素質焼結体および窒化ケイ素質焼結体の製造方法、並びにそれを用いた回路基板 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3775335B2 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4556162B2 (ja) * | 2004-03-11 | 2010-10-06 | 日立金属株式会社 | 窒化珪素質焼結体及びその製造方法、並びにそれを用いた回路基板 |
| WO2006118003A1 (ja) * | 2005-04-28 | 2006-11-09 | Hitachi Metals, Ltd. | 窒化珪素基板、その製造方法、それを用いた窒化珪素配線基板及び半導体モジュール |
| US8492300B2 (en) | 2007-03-22 | 2013-07-23 | Ngk Spark Plug Co., Ltd. | Insert and cutting tool |
| KR101582704B1 (ko) * | 2008-07-03 | 2016-01-05 | 히타치 긴조쿠 가부시키가이샤 | 질화 규소 기판 및 그 제조 방법과 그것을 사용한 질화 규소 회로 기판 및 반도체 모듈 |
| JP5142889B2 (ja) * | 2008-08-27 | 2013-02-13 | 京セラ株式会社 | 窒化珪素質焼結体およびその製法ならびに回路基板、パワー半導体モジュール |
| JPWO2013121861A1 (ja) * | 2012-02-13 | 2015-05-11 | 三井金属鉱業株式会社 | 窒化珪素焼結体及びその製造方法 |
| WO2013146789A1 (ja) * | 2012-03-26 | 2013-10-03 | 日立金属株式会社 | 窒化珪素焼結体基板及びその製造方法 |
| EP3831799A4 (en) * | 2018-08-03 | 2022-04-27 | Kabushiki Kaisha Toshiba | SILICON NITRIDE DISINTER BODY, SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT SUBSTRATE |
| WO2020045431A1 (ja) * | 2018-08-28 | 2020-03-05 | 京セラ株式会社 | インサートおよび切削工具 |
| CN114787105B (zh) * | 2019-12-11 | 2024-03-05 | Ube 株式会社 | 板状的氮化硅质烧结体及其制造方法 |
| CN112811922B (zh) * | 2021-01-20 | 2021-11-02 | 中国科学院上海硅酸盐研究所 | 一种覆铜板的氮化硅陶瓷基片及其制备方法 |
| JPWO2024111402A1 (enExample) * | 2022-11-21 | 2024-05-30 | ||
| WO2024177400A1 (ko) * | 2023-02-24 | 2024-08-29 | 주식회사 아모센스 | 질화규소 기판 제조용 조성물 및 이를 통해 제조된 질화규소 기판 |
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- 2002-04-23 JP JP2002121345A patent/JP3775335B2/ja not_active Expired - Lifetime
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| Publication number | Publication date |
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| JP2003313079A (ja) | 2003-11-06 |
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