JP3774278B2 - 液晶表示装置用薄膜トランジスタ基板の製造方法 - Google Patents

液晶表示装置用薄膜トランジスタ基板の製造方法 Download PDF

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Publication number
JP3774278B2
JP3774278B2 JP27048196A JP27048196A JP3774278B2 JP 3774278 B2 JP3774278 B2 JP 3774278B2 JP 27048196 A JP27048196 A JP 27048196A JP 27048196 A JP27048196 A JP 27048196A JP 3774278 B2 JP3774278 B2 JP 3774278B2
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JP
Japan
Prior art keywords
liquid crystal
display device
crystal display
thin film
transistor substrate
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Expired - Fee Related
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JP27048196A
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English (en)
Japanese (ja)
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JPH09133928A (ja
Inventor
柱亨 李
宰瑚 許
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of JPH09133928A publication Critical patent/JPH09133928A/ja
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Publication of JP3774278B2 publication Critical patent/JP3774278B2/ja
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Mathematical Physics (AREA)
  • Electromagnetism (AREA)
  • Thin Film Transistor (AREA)
JP27048196A 1995-10-12 1996-10-14 液晶表示装置用薄膜トランジスタ基板の製造方法 Expired - Fee Related JP3774278B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1995P35200 1995-10-12
KR1019950035200A KR100188090B1 (ko) 1995-10-12 1995-10-12 액정 표시 장치용 박막 트랜지스터 기판의 및 그 제조방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005172379A Division JP4312741B2 (ja) 1995-10-12 2005-06-13 液晶表示装置用薄膜トランジスタ基板およびその製造方法

Publications (2)

Publication Number Publication Date
JPH09133928A JPH09133928A (ja) 1997-05-20
JP3774278B2 true JP3774278B2 (ja) 2006-05-10

Family

ID=19430017

Family Applications (3)

Application Number Title Priority Date Filing Date
JP27048196A Expired - Fee Related JP3774278B2 (ja) 1995-10-12 1996-10-14 液晶表示装置用薄膜トランジスタ基板の製造方法
JP2005172379A Expired - Fee Related JP4312741B2 (ja) 1995-10-12 2005-06-13 液晶表示装置用薄膜トランジスタ基板およびその製造方法
JP2008232509A Withdrawn JP2009048199A (ja) 1995-10-12 2008-09-10 液晶表示装置用薄膜トランジスタ基板およびその製造方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2005172379A Expired - Fee Related JP4312741B2 (ja) 1995-10-12 2005-06-13 液晶表示装置用薄膜トランジスタ基板およびその製造方法
JP2008232509A Withdrawn JP2009048199A (ja) 1995-10-12 2008-09-10 液晶表示装置用薄膜トランジスタ基板およびその製造方法

Country Status (3)

Country Link
JP (3) JP3774278B2 (ko)
KR (1) KR100188090B1 (ko)
TW (1) TWI246620B (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3318285B2 (ja) 1999-05-10 2002-08-26 松下電器産業株式会社 薄膜トランジスタの製造方法
KR101781175B1 (ko) * 2015-08-31 2017-09-22 가천대학교 산학협력단 초박막 저결정성 실리콘 채널을 갖는 무접합 전계효과 트랜지스터 및 그 제조방법
JP6864158B2 (ja) * 2018-06-22 2021-04-28 住友重機械工業株式会社 半導体装置のレーザーアニール方法およびレーザーアニール方法
CN109920731B (zh) * 2019-03-20 2021-03-19 上海华虹宏力半导体制造有限公司 多晶硅薄膜晶体管及其制作方法
CN115497816B (zh) * 2022-10-19 2023-10-17 弘大芯源(深圳)半导体有限公司 一种半导体场效应集成电路及制备方法

Also Published As

Publication number Publication date
JP2005326867A (ja) 2005-11-24
KR100188090B1 (ko) 1999-07-01
JP4312741B2 (ja) 2009-08-12
TWI246620B (en) 2006-01-01
JPH09133928A (ja) 1997-05-20
JP2009048199A (ja) 2009-03-05
KR970024303A (ko) 1997-05-30

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