JP3764833B2 - 磁気記録媒体および磁気記憶装置 - Google Patents
磁気記録媒体および磁気記憶装置 Download PDFInfo
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- JP3764833B2 JP3764833B2 JP28242499A JP28242499A JP3764833B2 JP 3764833 B2 JP3764833 B2 JP 3764833B2 JP 28242499 A JP28242499 A JP 28242499A JP 28242499 A JP28242499 A JP 28242499A JP 3764833 B2 JP3764833 B2 JP 3764833B2
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- 229910000684 Cobalt-chrome Inorganic materials 0.000 description 3
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- 229910001069 Ti alloy Inorganic materials 0.000 description 2
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- 229910001149 41xx steel Inorganic materials 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910018134 Al-Mg Inorganic materials 0.000 description 1
- 229910018467 Al—Mg Inorganic materials 0.000 description 1
- 229910002515 CoAl Inorganic materials 0.000 description 1
- 229910019222 CoCrPt Inorganic materials 0.000 description 1
- 229910002521 CoMn Inorganic materials 0.000 description 1
- -1 CoTi Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910005805 NiNb Inorganic materials 0.000 description 1
- 241000849798 Nita Species 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910000756 V alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
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- 230000005674 electromagnetic induction Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28242499A JP3764833B2 (ja) | 1999-10-04 | 1999-10-04 | 磁気記録媒体および磁気記憶装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28242499A JP3764833B2 (ja) | 1999-10-04 | 1999-10-04 | 磁気記録媒体および磁気記憶装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001101651A JP2001101651A (ja) | 2001-04-13 |
| JP2001101651A5 JP2001101651A5 (enExample) | 2004-10-14 |
| JP3764833B2 true JP3764833B2 (ja) | 2006-04-12 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28242499A Expired - Fee Related JP3764833B2 (ja) | 1999-10-04 | 1999-10-04 | 磁気記録媒体および磁気記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3764833B2 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4534347B2 (ja) * | 2000-02-23 | 2010-09-01 | 富士電機デバイステクノロジー株式会社 | 磁気記録媒体およびその製造方法 |
| JP2002190108A (ja) * | 2000-10-13 | 2002-07-05 | Fuji Electric Co Ltd | 磁気記録媒体およびその製造方法 |
| JP2003077121A (ja) * | 2001-08-31 | 2003-03-14 | Fuji Electric Co Ltd | 磁気記録媒体およびその製造方法 |
| JP2003123243A (ja) | 2001-10-18 | 2003-04-25 | Fuji Electric Co Ltd | 磁気記録媒体及びその製造方法 |
| JP4497784B2 (ja) * | 2002-02-28 | 2010-07-07 | 富士電機デバイステクノロジー株式会社 | 磁気記録媒体 |
| JP2003323714A (ja) * | 2002-05-01 | 2003-11-14 | Fuji Electric Co Ltd | 磁気記録媒体およびその製造方法 |
| JP4127775B2 (ja) * | 2002-07-12 | 2008-07-30 | 昭和電工株式会社 | 磁気記録媒体、その製造方法、および磁気記録再生装置 |
| JP3688666B2 (ja) | 2002-07-31 | 2005-08-31 | 株式会社東芝 | 磁気ディスク装置 |
| JP2004227717A (ja) | 2003-01-24 | 2004-08-12 | Fuji Electric Device Technology Co Ltd | 磁気記録媒体およびその製造方法 |
| JP4812254B2 (ja) | 2004-01-08 | 2011-11-09 | 富士電機株式会社 | 垂直磁気記録媒体、および、その製造方法 |
| US7371471B2 (en) | 2004-03-08 | 2008-05-13 | Nec Tokin Corporation | Electromagnetic noise suppressing thin film |
| JP5518449B2 (ja) | 2009-12-02 | 2014-06-11 | エイチジーエスティーネザーランドビーブイ | 磁気記録媒体及びその製造方法 |
| JP6073194B2 (ja) * | 2013-07-03 | 2017-02-01 | 昭和電工株式会社 | 磁気記録媒体、磁気記憶装置 |
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1999
- 1999-10-04 JP JP28242499A patent/JP3764833B2/ja not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| JP2001101651A (ja) | 2001-04-13 |
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