JP3731447B2 - 電気光学装置及びその製造方法 - Google Patents
電気光学装置及びその製造方法 Download PDFInfo
- Publication number
- JP3731447B2 JP3731447B2 JP2000179899A JP2000179899A JP3731447B2 JP 3731447 B2 JP3731447 B2 JP 3731447B2 JP 2000179899 A JP2000179899 A JP 2000179899A JP 2000179899 A JP2000179899 A JP 2000179899A JP 3731447 B2 JP3731447 B2 JP 3731447B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- layer
- pixel
- electro
- optical device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000010408 film Substances 0.000 claims description 267
- 239000003990 capacitor Substances 0.000 claims description 160
- 239000000758 substrate Substances 0.000 claims description 107
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 88
- 229910052710 silicon Inorganic materials 0.000 claims description 88
- 239000010703 silicon Substances 0.000 claims description 88
- 238000003860 storage Methods 0.000 claims description 65
- 239000010409 thin film Substances 0.000 claims description 59
- 239000004065 semiconductor Substances 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 29
- 239000012535 impurity Substances 0.000 claims description 20
- 238000005468 ion implantation Methods 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 299
- 239000011229 interlayer Substances 0.000 description 39
- 238000005530 etching Methods 0.000 description 17
- 239000004973 liquid crystal related substance Substances 0.000 description 16
- 230000008569 process Effects 0.000 description 15
- 230000008878 coupling Effects 0.000 description 13
- 238000010168 coupling process Methods 0.000 description 13
- 238000005859 coupling reaction Methods 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 13
- 229920005591 polysilicon Polymers 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000000206 photolithography Methods 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 239000011651 chromium Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000010936 titanium Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 230000031700 light absorption Effects 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 239000011295 pitch Substances 0.000 description 6
- 239000003566 sealing material Substances 0.000 description 6
- 239000005368 silicate glass Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 5
- 230000002411 adverse Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- 239000005380 borophosphosilicate glass Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229910021478 group 5 element Inorganic materials 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004988 Nematic liquid crystal Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical compound OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000179899A JP3731447B2 (ja) | 2000-06-15 | 2000-06-15 | 電気光学装置及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000179899A JP3731447B2 (ja) | 2000-06-15 | 2000-06-15 | 電気光学装置及びその製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005216889A Division JP3969439B2 (ja) | 2005-07-27 | 2005-07-27 | 電気光学装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001356709A JP2001356709A (ja) | 2001-12-26 |
| JP2001356709A5 JP2001356709A5 (enExample) | 2005-10-06 |
| JP3731447B2 true JP3731447B2 (ja) | 2006-01-05 |
Family
ID=18681086
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000179899A Expired - Fee Related JP3731447B2 (ja) | 2000-06-15 | 2000-06-15 | 電気光学装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3731447B2 (enExample) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7554120B2 (en) | 2006-08-24 | 2009-06-30 | Seiko Epson Corporation | Circuit board for electro-optical device, electro-optical device, and electronic apparatus |
| US7558445B2 (en) | 2007-11-13 | 2009-07-07 | Seiko Epson Corporation | Electro-optical device and electronic apparatus |
| US7583329B2 (en) | 2007-02-01 | 2009-09-01 | Seiko Epson Corporation | Electro-optical device substrate, electro-optical device and electronic apparatus |
| US7616275B2 (en) | 2007-02-07 | 2009-11-10 | Seiko Epson Corporation | Electro-optical device substrate, electro-optical device, and electronic apparatus |
| US7830465B2 (en) | 2007-09-10 | 2010-11-09 | Seiko Epson Corporation | Electro-optical device and electronic apparatus |
| US7839461B2 (en) | 2007-02-16 | 2010-11-23 | Seiko Epson Corporation | Electro-optical device substrate, method of manufacturing the same, electro-optical device and electronic apparatus |
| US7910926B2 (en) | 2007-08-28 | 2011-03-22 | Seiko Epson Corporation | Electro-optical device and electronic apparatus |
| US8129807B2 (en) | 2008-09-25 | 2012-03-06 | Seiko Epson Corporation | Electro-optical device and electronic apparatus |
| US8168982B2 (en) | 2006-07-24 | 2012-05-01 | Seiko Epson Corporation | Substrate for electro-optical device with light shielding section having various widths, electro-optical device, and electronic apparatus |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002122881A (ja) * | 2000-10-13 | 2002-04-26 | Nec Corp | 液晶表示装置及びその製造方法 |
| JP3870897B2 (ja) | 2002-01-07 | 2007-01-24 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP3700697B2 (ja) * | 2002-02-12 | 2005-09-28 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| KR20030096562A (ko) * | 2002-06-14 | 2003-12-31 | 일진다이아몬드(주) | 박막트랜지스터 액정 표시장치 및 제조 방법 |
| JP4214741B2 (ja) * | 2002-08-27 | 2009-01-28 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP3850364B2 (ja) | 2002-10-25 | 2006-11-29 | 株式会社ミツトヨ | 変位測定器の測定子駆動機構 |
| JP3791517B2 (ja) | 2002-10-31 | 2006-06-28 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP4021392B2 (ja) | 2002-10-31 | 2007-12-12 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP3925549B2 (ja) * | 2002-11-26 | 2007-06-06 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP3767590B2 (ja) | 2002-11-26 | 2006-04-19 | セイコーエプソン株式会社 | 電気光学装置及びその製造方法並びに電子機器 |
| US7206048B2 (en) * | 2003-08-13 | 2007-04-17 | Samsung Electronics Co., Ltd. | Liquid crystal display and panel therefor |
| JP4529450B2 (ja) * | 2004-01-19 | 2010-08-25 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP5018336B2 (ja) * | 2007-08-22 | 2012-09-05 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP4730407B2 (ja) * | 2008-07-17 | 2011-07-20 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP4530105B2 (ja) * | 2009-10-13 | 2010-08-25 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP5782676B2 (ja) | 2010-03-10 | 2015-09-24 | セイコーエプソン株式会社 | 電気光学装置及び電子機器、並びに電気光学装置の製造方法 |
-
2000
- 2000-06-15 JP JP2000179899A patent/JP3731447B2/ja not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8168982B2 (en) | 2006-07-24 | 2012-05-01 | Seiko Epson Corporation | Substrate for electro-optical device with light shielding section having various widths, electro-optical device, and electronic apparatus |
| US7554120B2 (en) | 2006-08-24 | 2009-06-30 | Seiko Epson Corporation | Circuit board for electro-optical device, electro-optical device, and electronic apparatus |
| US7583329B2 (en) | 2007-02-01 | 2009-09-01 | Seiko Epson Corporation | Electro-optical device substrate, electro-optical device and electronic apparatus |
| US7616275B2 (en) | 2007-02-07 | 2009-11-10 | Seiko Epson Corporation | Electro-optical device substrate, electro-optical device, and electronic apparatus |
| US7839461B2 (en) | 2007-02-16 | 2010-11-23 | Seiko Epson Corporation | Electro-optical device substrate, method of manufacturing the same, electro-optical device and electronic apparatus |
| US7910926B2 (en) | 2007-08-28 | 2011-03-22 | Seiko Epson Corporation | Electro-optical device and electronic apparatus |
| US7830465B2 (en) | 2007-09-10 | 2010-11-09 | Seiko Epson Corporation | Electro-optical device and electronic apparatus |
| US7558445B2 (en) | 2007-11-13 | 2009-07-07 | Seiko Epson Corporation | Electro-optical device and electronic apparatus |
| US8129807B2 (en) | 2008-09-25 | 2012-03-06 | Seiko Epson Corporation | Electro-optical device and electronic apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001356709A (ja) | 2001-12-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3731447B2 (ja) | 電気光学装置及びその製造方法 | |
| JP3736461B2 (ja) | 電気光学装置、投射型表示装置及び電気光学装置の製造方法 | |
| JP3753613B2 (ja) | 電気光学装置及びそれを用いたプロジェクタ | |
| JP3424234B2 (ja) | 電気光学装置及びその製造方法 | |
| JP4144183B2 (ja) | 電気光学装置、その製造方法及び投射型表示装置 | |
| JP3873610B2 (ja) | 電気光学装置及びその製造方法並びにプロジェクタ | |
| JP4599655B2 (ja) | 電気光学装置及びプロジェクタ | |
| JP3711781B2 (ja) | 電気光学装置及びその製造方法 | |
| JP3687399B2 (ja) | 電気光学装置及びその製造方法 | |
| JP3937721B2 (ja) | 電気光学装置及びその製造方法並びにプロジェクタ | |
| JP3743273B2 (ja) | 電気光学装置の製造方法 | |
| JP3791338B2 (ja) | 電気光学装置及びその製造方法並びに投射型表示装置 | |
| JP3931547B2 (ja) | 電気光学装置及びその製造方法 | |
| JP3799943B2 (ja) | 電気光学装置およびプロジェクタ | |
| JP4019600B2 (ja) | 電気光学装置及びプロジェクタ | |
| JP3783500B2 (ja) | 電気光学装置及び投射型表示装置 | |
| JP2001265255A6 (ja) | 電気光学装置及びその製造方法 | |
| JP3969439B2 (ja) | 電気光学装置 | |
| JP4139530B2 (ja) | 電気光学装置及び電子機器 | |
| JP2001305581A (ja) | 電気光学装置 | |
| JP3991567B2 (ja) | 電気光学装置及び電子機器 | |
| JP3904371B2 (ja) | 電気光学装置及び電子機器 | |
| JP4023107B2 (ja) | 電気光学装置及びこれを具備する電子機器 | |
| JP3807230B2 (ja) | 電気光学装置及びプロジェクタ | |
| JP3642326B2 (ja) | 液晶パネル、電子機器、及びtftアレイ基板 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040116 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040116 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050520 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20050628 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050705 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050727 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20050920 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20051003 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091021 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101021 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101021 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111021 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121021 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121021 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131021 Year of fee payment: 8 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |