JP3729965B2 - バッファ回路 - Google Patents

バッファ回路 Download PDF

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Publication number
JP3729965B2
JP3729965B2 JP04821397A JP4821397A JP3729965B2 JP 3729965 B2 JP3729965 B2 JP 3729965B2 JP 04821397 A JP04821397 A JP 04821397A JP 4821397 A JP4821397 A JP 4821397A JP 3729965 B2 JP3729965 B2 JP 3729965B2
Authority
JP
Japan
Prior art keywords
type mos
mos transistor
transistor
drain electrode
level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP04821397A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10247847A (ja
JPH10247847A5 (enExample
Inventor
文樹 佐藤
紘一 藤田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP04821397A priority Critical patent/JP3729965B2/ja
Priority to TW086108149A priority patent/TW330295B/zh
Priority to US08/890,619 priority patent/US5926037A/en
Priority to KR1019970045838A priority patent/KR100264626B1/ko
Publication of JPH10247847A publication Critical patent/JPH10247847A/ja
Publication of JPH10247847A5 publication Critical patent/JPH10247847A5/ja
Application granted granted Critical
Publication of JP3729965B2 publication Critical patent/JP3729965B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356182—Bistable circuits using complementary field-effect transistors with additional means for controlling the main nodes
    • H03K3/356191—Bistable circuits using complementary field-effect transistors with additional means for controlling the main nodes with synchronous operation

Landscapes

  • Logic Circuits (AREA)
  • Static Random-Access Memory (AREA)
  • Shift Register Type Memory (AREA)
  • Dram (AREA)
JP04821397A 1997-03-03 1997-03-03 バッファ回路 Expired - Fee Related JP3729965B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP04821397A JP3729965B2 (ja) 1997-03-03 1997-03-03 バッファ回路
TW086108149A TW330295B (en) 1997-03-03 1997-06-12 Buffer circuit
US08/890,619 US5926037A (en) 1997-03-03 1997-07-09 Buffer circuit which transfers data held in a first latch circuit to a second latch circuit
KR1019970045838A KR100264626B1 (ko) 1997-03-03 1997-09-04 버퍼 회로

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04821397A JP3729965B2 (ja) 1997-03-03 1997-03-03 バッファ回路

Publications (3)

Publication Number Publication Date
JPH10247847A JPH10247847A (ja) 1998-09-14
JPH10247847A5 JPH10247847A5 (enExample) 2004-08-26
JP3729965B2 true JP3729965B2 (ja) 2005-12-21

Family

ID=12797141

Family Applications (1)

Application Number Title Priority Date Filing Date
JP04821397A Expired - Fee Related JP3729965B2 (ja) 1997-03-03 1997-03-03 バッファ回路

Country Status (4)

Country Link
US (1) US5926037A (enExample)
JP (1) JP3729965B2 (enExample)
KR (1) KR100264626B1 (enExample)
TW (1) TW330295B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100443643B1 (ko) * 2002-01-11 2004-08-09 삼성전자주식회사 반도체 집적 회로의 리시버 회로

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2172761B (en) * 1985-03-18 1988-11-09 Texas Instruments Ltd Random access memory using semiconductor data storage elements
KR910002967B1 (ko) * 1986-12-12 1991-05-11 가부시끼가이샤 히다찌세이사꾸쇼 바이폴라 트랜지스터와 mos 트랜지스터를 조합한 반도체 집적회로
US4804871A (en) * 1987-07-28 1989-02-14 Advanced Micro Devices, Inc. Bit-line isolated, CMOS sense amplifier
US5228106A (en) * 1991-05-30 1993-07-13 Integrated Device Technology, Inc. Track-and-regenerate amplifiers and memories using such amplifiers
US5325335A (en) * 1991-05-30 1994-06-28 Integrated Device Technology, Inc. Memories and amplifiers suitable for low voltage power supplies
US5508644A (en) * 1994-09-28 1996-04-16 Motorola, Inc. Sense amplifier for differential voltage detection with low input capacitance
US5872736A (en) * 1996-10-28 1999-02-16 Micron Technology, Inc. High speed input buffer

Also Published As

Publication number Publication date
JPH10247847A (ja) 1998-09-14
US5926037A (en) 1999-07-20
KR100264626B1 (ko) 2000-10-02
KR19980079347A (ko) 1998-11-25
TW330295B (en) 1998-04-21

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