JP3717504B2 - 銅酸化物または銅ナノワイヤからなった電子放出チップの低温形成方法及びこの方法により製造された電子放出チップを含むディスプレー装置または光源 - Google Patents
銅酸化物または銅ナノワイヤからなった電子放出チップの低温形成方法及びこの方法により製造された電子放出チップを含むディスプレー装置または光源 Download PDFInfo
- Publication number
- JP3717504B2 JP3717504B2 JP2003430509A JP2003430509A JP3717504B2 JP 3717504 B2 JP3717504 B2 JP 3717504B2 JP 2003430509 A JP2003430509 A JP 2003430509A JP 2003430509 A JP2003430509 A JP 2003430509A JP 3717504 B2 JP3717504 B2 JP 3717504B2
- Authority
- JP
- Japan
- Prior art keywords
- copper
- electron emission
- solution
- copper oxide
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3048—Distributed particle emitters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J63/00—Cathode-ray or electron-stream lamps
- H01J63/02—Details, e.g. electrode, gas filling, shape of vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J63/00—Cathode-ray or electron-stream lamps
- H01J63/06—Lamps with luminescent screen excited by the ray or stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Cold Cathode And The Manufacture (AREA)
- Discharge Lamps And Accessories Thereof (AREA)
Description
luorescent Display)、CRT(Cathode Tube)などのディスプレー装置または白色光源、LCD(Liquid Crystal Display)のバックライトランプなどの光源は一定の強さの電界が印加されれば、電子を放出する電子放出チップ(emitter tip)を要する。
δ=QV/nFA=itA/nFA
20 ナノワイヤ
100 下部基板
110 第1絶縁膜
200 カソード電極
300 銅膜
310a 第2絶縁膜パターン
320a ゲート電極
400 電子放出チップ
500 スペーサ
600 上部基板
700 アノ−ド電極
800 蛍光体
Claims (9)
- 露出した銅の表面を有する基板を提供する段階と、
前記銅の表面を100℃以下の低温で酸化溶液と接触させて前記基板の表面に銅酸化物ナノワイヤを成長させる段階とを含むことを特徴とする電子放出チップの低温形成方法。 - 前記酸化溶液は亜塩素酸ナトリウム(NaClO2)水溶液と水酸化ナトリウム水溶液の混合液であることを特徴とする請求項1に記載の電子放出チップの低温形成方法。
- 前記酸化溶液はリン酸三ナトリウム水溶液をさらに含む混合液であることを特徴とする請求項2に記載の電子放出チップ低温形成方法。
- 露出した銅の表面を有する基板を提供する段階と、
前記銅の表面を100℃以下の低温で酸化溶液と接触させて前記基板の表面に銅酸化物ナノワイヤを成長させる段階と、
前記銅酸化物ナノワイヤに450℃以下の温度で還元ガスを供給して前記銅酸化物ナノワイヤを銅ナノワイヤに還元させる段階とを含むことを特徴とする電子放出チップの低温形成方法。 - 前記酸化溶液は亜塩素酸ナトリウム(NaClO2)水溶液と水酸化ナトリウム水溶液の混合液であることを特徴とする請求項4に記載の低温形成方法。
- 前記酸化溶液はリン酸三ナトリウム水溶液をさらに含む混合液であることを特徴とする請求項5に記載の低温形成方法。
- 前記還元ガスは水素ガスであることを特徴とする請求項4に記載の低温形成方法。
- 第1乃至第7項のうちいずれか一項により形成された電子放出チップを具備することを特徴とする電界放出ディスプレー装置。
- 第1項乃至第7項のうちいずれか一項により形成された電子放出チップを具備することを特徴とする光源。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0084063A KR100502821B1 (ko) | 2002-12-26 | 2002-12-26 | 구리산화물 또는 구리 나노와이어로 이루어진 전자방출팁의 저온 형성 방법 및 이 방법에 의해 제조된 전자방출팁을 포함하는 디스플레이 장치 또는 광원 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004214196A JP2004214196A (ja) | 2004-07-29 |
JP3717504B2 true JP3717504B2 (ja) | 2005-11-16 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2003430509A Expired - Fee Related JP3717504B2 (ja) | 2002-12-26 | 2003-12-25 | 銅酸化物または銅ナノワイヤからなった電子放出チップの低温形成方法及びこの方法により製造された電子放出チップを含むディスプレー装置または光源 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7041518B2 (ja) |
JP (1) | JP3717504B2 (ja) |
KR (1) | KR100502821B1 (ja) |
CN (1) | CN100435261C (ja) |
AU (1) | AU2003290438A1 (ja) |
WO (1) | WO2004059682A1 (ja) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7575853B2 (en) * | 2004-04-08 | 2009-08-18 | Tdk Corporation | Method of forming thin film pattern and method of forming magnetoresistive element |
KR100712837B1 (ko) * | 2004-04-29 | 2007-05-02 | 엘지전자 주식회사 | 히트 싱크 및 그 표면처리방법 |
KR100656781B1 (ko) * | 2005-03-11 | 2006-12-13 | 재단법인서울대학교산학협력재단 | 탄소나노튜브와 구리의 복합도금법으로 형성된 전자방출팁의 형성방법 |
EP2922099B1 (en) * | 2005-08-12 | 2019-01-02 | Cambrios Film Solutions Corporation | Nanowires-based transparent conductors |
EP1947701A3 (en) * | 2005-08-12 | 2009-05-06 | Cambrios Technologies Corporation | Nanowires-based transparent conductors |
JP4439014B2 (ja) * | 2006-06-08 | 2010-03-24 | 三星エスディアイ株式会社 | 発光装置、および表示装置 |
US8259258B2 (en) * | 2006-06-28 | 2012-09-04 | Thomson Licensing | Liquid crystal display having a field emission backlight |
WO2008029416A1 (en) * | 2006-09-08 | 2008-03-13 | Tata Institute Of Fundamental Research (Tifr) | A metal nanowire based device for obtaining gas discharge in air at low voltage less than 100v at atmospheric pressure. |
US20090251401A1 (en) * | 2006-09-15 | 2009-10-08 | Thomson Licensing | Display Utilizing Simultaneous Color Intelligent Backlighting and luminescence Controlling Shutters |
US8018568B2 (en) * | 2006-10-12 | 2011-09-13 | Cambrios Technologies Corporation | Nanowire-based transparent conductors and applications thereof |
EP2082436B1 (en) | 2006-10-12 | 2019-08-28 | Cambrios Film Solutions Corporation | Nanowire-based transparent conductors and method of making them |
JP5216780B2 (ja) * | 2006-12-18 | 2013-06-19 | トムソン ライセンシング | ブラックマトリックスを備える電界放出部を有するディスプレイ装置 |
US20090321364A1 (en) | 2007-04-20 | 2009-12-31 | Cambrios Technologies Corporation | Systems and methods for filtering nanowires |
US8114483B2 (en) * | 2007-07-05 | 2012-02-14 | Imec | Photon induced formation of metal comprising elongated nanostructures |
EP2011592A1 (en) * | 2007-07-05 | 2009-01-07 | Interuniversitair Microelektronica Centrum | Photon induced formation of metal comprising elongated nanostructures |
US20090029766A1 (en) * | 2007-07-26 | 2009-01-29 | Lutnick Howard W | Amusement gaming access and authorization point |
JP5119457B2 (ja) * | 2008-02-05 | 2013-01-16 | 国立大学法人東北大学 | 電界放出型電子源及びその製造方法 |
US8734929B2 (en) | 2008-08-25 | 2014-05-27 | Snu R&Db Foundation | Hydrophobic composites and methods of making the same |
US20100043873A1 (en) * | 2008-08-25 | 2010-02-25 | Yong Hyup Kim | Semiconducting devices and methods of making the same |
US20110227085A1 (en) * | 2008-12-26 | 2011-09-22 | Sharp Kabushiki Kaisha | Substrate for use in display panel, and display panel including same |
KR101084017B1 (ko) | 2009-09-29 | 2011-11-16 | 연세대학교 산학협력단 | 졸-겔 공정과 나노 구조체를 이용한 산화물 반도체 소자의 제조 방법 및 이에 의해 제조되는 산화물 반도체 소자 |
US9123818B2 (en) | 2009-05-26 | 2015-09-01 | Industry-Academic Cooperation Foundation, Yonsei University | Compositions for solution process, electronic devices fabricated using the same, and fabrication methods thereof |
EP2531566B1 (en) * | 2010-02-05 | 2018-09-12 | CAM Holding Corporation | Photosensitive ink compositions and transparent conductors and method of using the same |
WO2011112608A1 (en) * | 2010-03-08 | 2011-09-15 | University Of Rochester | Synthesis of nanoparticles using reducing gases |
WO2011130923A1 (zh) * | 2010-04-23 | 2011-10-27 | 海洋王照明科技股份有限公司 | 氧化铜纳米线的制备方法 |
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US8834597B1 (en) * | 2012-05-31 | 2014-09-16 | The United Stated of America as Represented by the Administrator of the National Aeronautics & Space Administration (NASA) | Copper nanowire production for interconnect applications |
CN102776469A (zh) * | 2012-07-27 | 2012-11-14 | 中山大学 | 一种制备铜纳米线和铜纳米尖锥的方法 |
RU2522844C1 (ru) * | 2013-01-23 | 2014-07-20 | Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Дальневосточный федеральный университет" | Способ формирования эпитаксиальных наноструктур меди на поверхности полупроводниковых подложек |
JP2014152338A (ja) * | 2013-02-05 | 2014-08-25 | Murata Mfg Co Ltd | ナノワイヤ付き微粒子およびその製造方法 |
KR101586666B1 (ko) * | 2014-08-22 | 2016-01-19 | 한국전기연구원 | 태양광 고흡수 및 태양열 저방사용 구리 산화물 나노구조의 제조방법 |
CN106001597B (zh) * | 2016-07-08 | 2018-03-20 | 武汉工程大学 | 一种元素分析仪中铜柱的回收方法 |
CN115287765A (zh) * | 2022-07-11 | 2022-11-04 | 大连理工大学 | 一种单晶氧化铜纳米线和铜纳米线的简易制备方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02262220A (ja) * | 1989-03-31 | 1990-10-25 | Sharp Corp | 電子放出電極 |
JPH0689651A (ja) * | 1992-09-09 | 1994-03-29 | Osaka Prefecture | 微小真空デバイスとその製造方法 |
US5578901A (en) * | 1994-02-14 | 1996-11-26 | E. I. Du Pont De Nemours And Company | Diamond fiber field emitters |
WO1996014650A1 (en) * | 1994-11-04 | 1996-05-17 | Micron Display Technology, Inc. | Method for sharpening emitter sites using low temperature oxidation processes |
US6458373B1 (en) | 1997-01-07 | 2002-10-01 | Sonus Pharmaceuticals, Inc. | Emulsion vehicle for poorly soluble drugs |
WO1999065821A1 (en) * | 1998-06-19 | 1999-12-23 | The Research Foundation Of State University Of New York | Free-standing and aligned carbon nanotubes and synthesis thereof |
US6250984B1 (en) * | 1999-01-25 | 2001-06-26 | Agere Systems Guardian Corp. | Article comprising enhanced nanotube emitter structure and process for fabricating article |
KR20010011136A (ko) * | 1999-07-26 | 2001-02-15 | 정선종 | 나노구조를 에미터로 사용한 삼극형 전계 방출 에미터의 구조및 그 제조방법 |
US6741019B1 (en) * | 1999-10-18 | 2004-05-25 | Agere Systems, Inc. | Article comprising aligned nanowires |
JP2002025111A (ja) | 2000-06-30 | 2002-01-25 | Sony Corp | 光ディスク並びにこの光ディスクの製造装置及び製造方法 |
-
2002
- 2002-12-26 KR KR10-2002-0084063A patent/KR100502821B1/ko not_active IP Right Cessation
-
2003
- 2003-12-24 WO PCT/KR2003/002829 patent/WO2004059682A1/en not_active Application Discontinuation
- 2003-12-24 US US10/746,358 patent/US7041518B2/en not_active Expired - Fee Related
- 2003-12-24 AU AU2003290438A patent/AU2003290438A1/en not_active Abandoned
- 2003-12-25 JP JP2003430509A patent/JP3717504B2/ja not_active Expired - Fee Related
- 2003-12-26 CN CNB2003101251456A patent/CN100435261C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN100435261C (zh) | 2008-11-19 |
US7041518B2 (en) | 2006-05-09 |
WO2004059682A1 (en) | 2004-07-15 |
CN1560893A (zh) | 2005-01-05 |
KR20040057353A (ko) | 2004-07-02 |
KR100502821B1 (ko) | 2005-07-22 |
JP2004214196A (ja) | 2004-07-29 |
AU2003290438A1 (en) | 2004-07-22 |
US20040147049A1 (en) | 2004-07-29 |
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