JP3711966B2 - Ｉｉｉ族窒化物半導体層の気相成長方法及びｉｉｉ族窒化物半導体素子 - Google Patents

Ｉｉｉ族窒化物半導体層の気相成長方法及びｉｉｉ族窒化物半導体素子 Download PDF

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JP3711966B2
JP3711966B2 JP2002215978A JP2002215978A JP3711966B2 JP 3711966 B2 JP3711966 B2 JP 3711966B2 JP 2002215978 A JP2002215978 A JP 2002215978A JP 2002215978 A JP2002215978 A JP 2002215978A JP 3711966 B2 JP3711966 B2 JP 3711966B2
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layer
nitride semiconductor
group iii
boron
iii nitride
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JP2004063519A5 (cg-RX-API-DMAC7.html
JP2004063519A (ja
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隆 宇田川
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Resonac Holdings Corp
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Showa Denko KK
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JP2002215978A 2002-07-25 2002-07-25 Ｉｉｉ族窒化物半導体層の気相成長方法及びｉｉｉ族窒化物半導体素子 Expired - Fee Related JP3711966B2 (ja)

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JP2002215978A JP3711966B2 (ja) 2002-07-25 2002-07-25 Ｉｉｉ族窒化物半導体層の気相成長方法及びｉｉｉ族窒化物半導体素子

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JP2002215978A JP3711966B2 (ja) 2002-07-25 2002-07-25 Ｉｉｉ族窒化物半導体層の気相成長方法及びｉｉｉ族窒化物半導体素子

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JP2004063519A JP2004063519A (ja) 2004-02-26
JP2004063519A5 JP2004063519A5 (cg-RX-API-DMAC7.html) 2005-06-23
JP3711966B2 true JP3711966B2 (ja) 2005-11-02

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Publication number Priority date Publication date Assignee Title
JP4884699B2 (ja) * 2004-05-12 2012-02-29 昭和電工株式会社 化合物半導体積層構造及びそれを用いた発光素子
JP4809669B2 (ja) * 2005-03-25 2011-11-09 学校法人同志社 積層構造体、その形成方法および半導体素子
JP6008661B2 (ja) 2012-08-29 2016-10-19 日東光器株式会社 ＧａＮ系結晶及び半導体素子の製造方法
JP7622527B2 (ja) * 2020-11-16 2025-01-28 三菱ケミカル株式会社 共重合ポリエステル系シーラントフィルム

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