JP3696132B2 - アクティブマトリクス基板及びその製造方法 - Google Patents

アクティブマトリクス基板及びその製造方法 Download PDF

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Publication number
JP3696132B2
JP3696132B2 JP2001208724A JP2001208724A JP3696132B2 JP 3696132 B2 JP3696132 B2 JP 3696132B2 JP 2001208724 A JP2001208724 A JP 2001208724A JP 2001208724 A JP2001208724 A JP 2001208724A JP 3696132 B2 JP3696132 B2 JP 3696132B2
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JP
Japan
Prior art keywords
substrate
control member
position control
active element
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001208724A
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English (en)
Japanese (ja)
Other versions
JP2003022034A5 (https=
JP2003022034A (ja
Inventor
雄二郎 原
政彦 秋山
豊 小野塚
毅 日置
充雄 中島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2001208724A priority Critical patent/JP3696132B2/ja
Priority to KR10-2002-0039600A priority patent/KR100521818B1/ko
Priority to US10/190,663 priority patent/US6828657B2/en
Publication of JP2003022034A publication Critical patent/JP2003022034A/ja
Publication of JP2003022034A5 publication Critical patent/JP2003022034A5/ja
Application granted granted Critical
Publication of JP3696132B2 publication Critical patent/JP3696132B2/ja
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/13613—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit the semiconductor element being formed on a first substrate and thereafter transferred to the final cell substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7434—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
JP2001208724A 2001-07-10 2001-07-10 アクティブマトリクス基板及びその製造方法 Expired - Fee Related JP3696132B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001208724A JP3696132B2 (ja) 2001-07-10 2001-07-10 アクティブマトリクス基板及びその製造方法
KR10-2002-0039600A KR100521818B1 (ko) 2001-07-10 2002-07-09 액티브 매트릭스 기판 및 그 제조 방법
US10/190,663 US6828657B2 (en) 2001-07-10 2002-07-09 Active matrix substrate and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001208724A JP3696132B2 (ja) 2001-07-10 2001-07-10 アクティブマトリクス基板及びその製造方法

Publications (3)

Publication Number Publication Date
JP2003022034A JP2003022034A (ja) 2003-01-24
JP2003022034A5 JP2003022034A5 (https=) 2004-12-02
JP3696132B2 true JP3696132B2 (ja) 2005-09-14

Family

ID=19044490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001208724A Expired - Fee Related JP3696132B2 (ja) 2001-07-10 2001-07-10 アクティブマトリクス基板及びその製造方法

Country Status (3)

Country Link
US (1) US6828657B2 (https=)
JP (1) JP3696132B2 (https=)
KR (1) KR100521818B1 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3447619B2 (ja) * 1999-06-25 2003-09-16 株式会社東芝 アクティブマトリクス基板の製造方法、中間転写基板
JP3696131B2 (ja) * 2001-07-10 2005-09-14 株式会社東芝 アクティブマトリクス基板及びその製造方法
JP4351012B2 (ja) * 2003-09-25 2009-10-28 浜松ホトニクス株式会社 半導体装置
JP4494746B2 (ja) * 2003-09-25 2010-06-30 浜松ホトニクス株式会社 半導体装置
JP4494745B2 (ja) * 2003-09-25 2010-06-30 浜松ホトニクス株式会社 半導体装置
JP3946683B2 (ja) * 2003-09-25 2007-07-18 株式会社東芝 アクティブマトリクス基板の製造方法
KR100709255B1 (ko) * 2005-08-11 2007-04-19 삼성에스디아이 주식회사 평판 표시 장치 및 그 제조 방법
DE102005043657B4 (de) * 2005-09-13 2011-12-15 Infineon Technologies Ag Chipmodul, Verfahren zur Verkapselung eines Chips und Verwendung eines Verkapselungsmaterials
US20080122119A1 (en) * 2006-08-31 2008-05-29 Avery Dennison Corporation Method and apparatus for creating rfid devices using masking techniques
KR101446226B1 (ko) 2006-11-27 2014-10-01 엘지디스플레이 주식회사 플렉서블 표시장치 및 그 제조 방법
US8630326B2 (en) 2009-10-13 2014-01-14 Skorpios Technologies, Inc. Method and system of heterogeneous substrate bonding for photonic integration
US8735191B2 (en) 2012-01-04 2014-05-27 Skorpios Technologies, Inc. Method and system for template assisted wafer bonding using pedestals
US9922967B2 (en) 2010-12-08 2018-03-20 Skorpios Technologies, Inc. Multilevel template assisted wafer bonding
US9209142B1 (en) * 2014-09-05 2015-12-08 Skorpios Technologies, Inc. Semiconductor bonding with compliant resin and utilizing hydrogen implantation for transfer-wafer removal
KR102402999B1 (ko) * 2015-08-31 2022-05-30 삼성디스플레이 주식회사 디스플레이 장치 및 이의 제조 방법
US9887119B1 (en) * 2016-09-30 2018-02-06 International Business Machines Corporation Multi-chip package assembly
CN108598089B (zh) * 2018-04-27 2020-09-29 武汉华星光电技术有限公司 Tft基板的制作方法及tft基板
CN112490174A (zh) * 2020-11-26 2021-03-12 深圳麦沄显示技术有限公司 一种芯片器件的转移方法
WO2024124535A1 (zh) 2022-12-16 2024-06-20 厦门市芯颖显示科技有限公司 转移载板、转移组件及微器件转移方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5764776A (en) * 1980-10-09 1982-04-20 Nippon Denshi Kogyo Shinko Liquid crystal display unit
FR2679057B1 (fr) * 1991-07-11 1995-10-20 Morin Francois Structure d'ecran a cristal liquide, a matrice active et a haute definition.
JPH06230426A (ja) * 1993-02-04 1994-08-19 Fuji Xerox Co Ltd 液晶表示装置
US5904545A (en) 1993-12-17 1999-05-18 The Regents Of The University Of California Apparatus for fabricating self-assembling microstructures
US5545291A (en) 1993-12-17 1996-08-13 The Regents Of The University Of California Method for fabricating self-assembling microstructures
JP3447619B2 (ja) 1999-06-25 2003-09-16 株式会社東芝 アクティブマトリクス基板の製造方法、中間転写基板
TW543206B (en) * 1999-06-28 2003-07-21 Semiconductor Energy Lab EL display device and electronic device

Also Published As

Publication number Publication date
JP2003022034A (ja) 2003-01-24
US20030010970A1 (en) 2003-01-16
KR100521818B1 (ko) 2005-10-17
US6828657B2 (en) 2004-12-07
KR20030007065A (ko) 2003-01-23

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