JP3680512B2 - 固体撮像素子 - Google Patents

固体撮像素子 Download PDF

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Publication number
JP3680512B2
JP3680512B2 JP22265197A JP22265197A JP3680512B2 JP 3680512 B2 JP3680512 B2 JP 3680512B2 JP 22265197 A JP22265197 A JP 22265197A JP 22265197 A JP22265197 A JP 22265197A JP 3680512 B2 JP3680512 B2 JP 3680512B2
Authority
JP
Japan
Prior art keywords
film
light
light receiving
low reflection
reflection film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP22265197A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10256518A (ja
JPH10256518A5 (enExample
Inventor
英浩 上野
雄一 岡崎
裕之 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP22265197A priority Critical patent/JP3680512B2/ja
Priority to US09/106,496 priority patent/US6518639B2/en
Publication of JPH10256518A publication Critical patent/JPH10256518A/ja
Publication of JPH10256518A5 publication Critical patent/JPH10256518A5/ja
Application granted granted Critical
Publication of JP3680512B2 publication Critical patent/JP3680512B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/156—CCD or CID colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1534—Interline transfer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
JP22265197A 1997-01-09 1997-08-19 固体撮像素子 Expired - Lifetime JP3680512B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP22265197A JP3680512B2 (ja) 1997-01-09 1997-08-19 固体撮像素子
US09/106,496 US6518639B2 (en) 1997-01-09 1998-06-29 Solid state imaging device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP227097 1997-01-09
JP9-2270 1997-01-31
JP22265197A JP3680512B2 (ja) 1997-01-09 1997-08-19 固体撮像素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005089450A Division JP4333615B2 (ja) 1997-01-09 2005-03-25 固体撮像素子

Publications (3)

Publication Number Publication Date
JPH10256518A JPH10256518A (ja) 1998-09-25
JPH10256518A5 JPH10256518A5 (enExample) 2005-03-10
JP3680512B2 true JP3680512B2 (ja) 2005-08-10

Family

ID=26335627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22265197A Expired - Lifetime JP3680512B2 (ja) 1997-01-09 1997-08-19 固体撮像素子

Country Status (2)

Country Link
US (1) US6518639B2 (enExample)
JP (1) JP3680512B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6995800B2 (en) * 2000-01-27 2006-02-07 Canon Kabushiki Kaisha Image pickup apparatus utilizing a plurality of converging lenses
JP4691781B2 (ja) * 2001-01-05 2011-06-01 ソニー株式会社 固体撮像素子およびその製造方法
US20040264192A1 (en) * 2003-05-06 2004-12-30 Seiko Epson Corporation Light source apparatus, method of manufacture therefor, and projection-type display apparatus
JP2005142510A (ja) * 2003-11-10 2005-06-02 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
JP4046069B2 (ja) * 2003-11-17 2008-02-13 ソニー株式会社 固体撮像素子及び固体撮像素子の製造方法
US7453109B2 (en) 2004-09-03 2008-11-18 Canon Kabushiki Kaisha Solid-state image sensor and imaging system
JP2006332124A (ja) * 2005-05-23 2006-12-07 Matsushita Electric Ind Co Ltd 固体撮像素子及びその製造方法
JP2007080941A (ja) * 2005-09-12 2007-03-29 Fujifilm Corp 固体撮像素子およびその製造方法
JP2007242697A (ja) * 2006-03-06 2007-09-20 Canon Inc 撮像装置および撮像システム
JP2007243100A (ja) * 2006-03-13 2007-09-20 Iwate Toshiba Electronics Co Ltd 固体撮像装置およびその製造方法
JP2008034684A (ja) * 2006-07-31 2008-02-14 Sony Corp 固体撮像素子、固体撮像素子の製造方法および撮像装置
JP5274001B2 (ja) * 2007-12-14 2013-08-28 シャープ株式会社 固体撮像装置の製造方法
JP2011100900A (ja) 2009-11-06 2011-05-19 Sony Corp 固体撮像装置及びその製造方法と設計方法並びに電子機器
KR102472276B1 (ko) * 2016-03-24 2022-11-29 에스케이하이닉스 주식회사 이미지 센서

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5204138A (en) * 1991-12-24 1993-04-20 International Business Machines Corporation Plasma enhanced CVD process for fluorinated silicon nitride films
JP2825702B2 (ja) * 1992-05-20 1998-11-18 シャープ株式会社 固体撮像素子
JPH06232379A (ja) * 1993-02-01 1994-08-19 Sharp Corp 固体撮像素子
JP2950714B2 (ja) * 1993-09-28 1999-09-20 シャープ株式会社 固体撮像装置およびその製造方法
JP2755176B2 (ja) * 1994-06-30 1998-05-20 日本電気株式会社 固体撮像素子

Also Published As

Publication number Publication date
JPH10256518A (ja) 1998-09-25
US6518639B2 (en) 2003-02-11
US20010054743A1 (en) 2001-12-27

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