JP3667893B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP3667893B2
JP3667893B2 JP25143396A JP25143396A JP3667893B2 JP 3667893 B2 JP3667893 B2 JP 3667893B2 JP 25143396 A JP25143396 A JP 25143396A JP 25143396 A JP25143396 A JP 25143396A JP 3667893 B2 JP3667893 B2 JP 3667893B2
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JP
Japan
Prior art keywords
gas
etching
semiconductor device
manufacturing
acyl group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP25143396A
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English (en)
Japanese (ja)
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JPH1098024A (ja
JPH1098024A5 (https=
Inventor
木 康 嗣 鈴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kawasaki Microelectronics Inc
Original Assignee
Kawasaki Microelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kawasaki Microelectronics Inc filed Critical Kawasaki Microelectronics Inc
Priority to JP25143396A priority Critical patent/JP3667893B2/ja
Priority to US08/934,759 priority patent/US5897377A/en
Publication of JPH1098024A publication Critical patent/JPH1098024A/ja
Publication of JPH1098024A5 publication Critical patent/JPH1098024A5/ja
Application granted granted Critical
Publication of JP3667893B2 publication Critical patent/JP3667893B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

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  • Drying Of Semiconductors (AREA)
JP25143396A 1996-09-24 1996-09-24 半導体装置の製造方法 Expired - Fee Related JP3667893B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP25143396A JP3667893B2 (ja) 1996-09-24 1996-09-24 半導体装置の製造方法
US08/934,759 US5897377A (en) 1996-09-24 1997-09-22 Semiconductor device manufacturing method with use of gas including acyl-group-containing compound

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25143396A JP3667893B2 (ja) 1996-09-24 1996-09-24 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JPH1098024A JPH1098024A (ja) 1998-04-14
JPH1098024A5 JPH1098024A5 (https=) 2004-09-30
JP3667893B2 true JP3667893B2 (ja) 2005-07-06

Family

ID=17222774

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25143396A Expired - Fee Related JP3667893B2 (ja) 1996-09-24 1996-09-24 半導体装置の製造方法

Country Status (2)

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US (1) US5897377A (https=)
JP (1) JP3667893B2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3409984B2 (ja) * 1996-11-14 2003-05-26 東京エレクトロン株式会社 半導体装置及び半導体装置の製造方法
TW428045B (en) * 1997-08-20 2001-04-01 Air Liquide Electronics Chemic Plasma cleaning and etching methods using non-global-warming compounds
JP4627843B2 (ja) * 1999-07-22 2011-02-09 株式会社半導体エネルギー研究所 半導体装置
US6749763B1 (en) 1999-08-02 2004-06-15 Matsushita Electric Industrial Co., Ltd. Plasma processing method
JP3403373B2 (ja) * 2000-05-26 2003-05-06 松下電器産業株式会社 有機膜のエッチング方法、半導体装置の製造方法及びパターンの形成方法
US6743732B1 (en) 2001-01-26 2004-06-01 Taiwan Semiconductor Manufacturing Company Organic low K dielectric etch with NH3 chemistry
JP3914452B2 (ja) * 2001-08-07 2007-05-16 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
US20050241669A1 (en) * 2004-04-29 2005-11-03 Tokyo Electron Limited Method and system of dry cleaning a processing chamber
US10103008B2 (en) * 2016-01-12 2018-10-16 Fei Company Charged particle beam-induced etching

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4215005A (en) * 1978-01-30 1980-07-29 Allied Chemical Corporation Organic stripping compositions and method for using same
JPS58150429A (ja) * 1982-03-03 1983-09-07 Hitachi Ltd ドライエツチング方法
DE3760030D1 (en) * 1986-02-07 1989-02-02 Nippon Telegraph & Telephone Photosensitive and high energy beam sensitive resin composition containing substituted polysiloxane
US4732837A (en) * 1986-05-02 1988-03-22 Hoechst Celanese Corporation Novel mixed ester O-quinone photosensitizers
JP2703432B2 (ja) * 1991-10-08 1998-01-26 シャープ株式会社 ペロブスカイト型酸化物膜のドライエッチング方法
JP3297974B2 (ja) * 1995-07-26 2002-07-02 ソニー株式会社 ペロブスカイト型酸化物薄膜のプラズマエッチング方法および半導体装置の製造方法

Also Published As

Publication number Publication date
JPH1098024A (ja) 1998-04-14
US5897377A (en) 1999-04-27

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