JP3602279B2 - アクティブマトリクス型表示回路およびその作製方法 - Google Patents
アクティブマトリクス型表示回路およびその作製方法 Download PDFInfo
- Publication number
- JP3602279B2 JP3602279B2 JP30868496A JP30868496A JP3602279B2 JP 3602279 B2 JP3602279 B2 JP 3602279B2 JP 30868496 A JP30868496 A JP 30868496A JP 30868496 A JP30868496 A JP 30868496A JP 3602279 B2 JP3602279 B2 JP 3602279B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon nitride
- nitride film
- gate insulating
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011159 matrix material Substances 0.000 title claims description 48
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 55
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 24
- 239000003990 capacitor Substances 0.000 claims description 22
- 229920001721 polyimide Polymers 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- LFVLUOAHQIVABZ-UHFFFAOYSA-N Iodofenphos Chemical compound COP(=S)(OC)OC1=CC(Cl)=C(I)C=C1Cl LFVLUOAHQIVABZ-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 description 62
- 239000010410 layer Substances 0.000 description 56
- 239000012212 insulator Substances 0.000 description 26
- 239000011229 interlayer Substances 0.000 description 26
- 239000010409 thin film Substances 0.000 description 17
- 239000004642 Polyimide Substances 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 229910052814 silicon oxide Inorganic materials 0.000 description 13
- 239000012535 impurity Substances 0.000 description 10
- 239000004973 liquid crystal related substance Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- -1 phosphorus ions Chemical class 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- YTAHJIFKAKIKAV-XNMGPUDCSA-N [(1R)-3-morpholin-4-yl-1-phenylpropyl] N-[(3S)-2-oxo-5-phenyl-1,3-dihydro-1,4-benzodiazepin-3-yl]carbamate Chemical compound O=C1[C@H](N=C(C2=C(N1)C=CC=C2)C1=CC=CC=C1)NC(O[C@H](CCN1CCOCC1)C1=CC=CC=C1)=O YTAHJIFKAKIKAV-XNMGPUDCSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30868496A JP3602279B2 (ja) | 1996-11-04 | 1996-11-04 | アクティブマトリクス型表示回路およびその作製方法 |
| US08/962,047 US6262438B1 (en) | 1996-11-04 | 1997-10-31 | Active matrix type display circuit and method of manufacturing the same |
| US09/906,883 US6660549B2 (en) | 1996-11-04 | 2001-07-16 | Method of manufacturing an active matrix type display circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30868496A JP3602279B2 (ja) | 1996-11-04 | 1996-11-04 | アクティブマトリクス型表示回路およびその作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH10133233A JPH10133233A (ja) | 1998-05-22 |
| JP3602279B2 true JP3602279B2 (ja) | 2004-12-15 |
| JPH10133233A5 JPH10133233A5 (enExample) | 2004-12-24 |
Family
ID=17984048
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30868496A Expired - Fee Related JP3602279B2 (ja) | 1996-11-04 | 1996-11-04 | アクティブマトリクス型表示回路およびその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3602279B2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000012864A (ja) | 1998-06-22 | 2000-01-14 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP3127894B2 (ja) * | 1998-07-24 | 2001-01-29 | 日本電気株式会社 | アクティブマトリクス型液晶表示装置 |
| JP4476390B2 (ja) | 1998-09-04 | 2010-06-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7317438B2 (en) | 1998-10-30 | 2008-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Field sequential liquid crystal display device and driving method thereof, and head mounted display |
| JP2000221524A (ja) * | 1999-01-29 | 2000-08-11 | Sanyo Electric Co Ltd | カラー液晶表示装置 |
| JP4651777B2 (ja) * | 1999-06-02 | 2011-03-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| EP2500941A3 (en) * | 1999-06-02 | 2017-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP6111398B2 (ja) * | 2011-12-20 | 2017-04-12 | 株式会社Ｊｏｌｅｄ | 表示装置および電子機器 |
| JP6063766B2 (ja) | 2013-02-20 | 2017-01-18 | 株式会社ジャパンディスプレイ | 半導体装置 |
| KR102110226B1 (ko) * | 2013-09-11 | 2020-05-14 | 삼성디스플레이 주식회사 | 표시패널 및 그 제조방법 |
-
1996
- 1996-11-04 JP JP30868496A patent/JP3602279B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10133233A (ja) | 1998-05-22 |
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