JP3591524B2 - Semiconductor device mounting board, method of manufacturing the same, board inspection method thereof, and semiconductor package - Google Patents

Abstract

A semiconductor device mounting board in which high density packaging and fining can be realized in response to smaller pitches while ensuring excellent reliability of package by improving a conventional wiring board, its producing method and inspecting method, and a semiconductor package. The semiconductor device mounting board in characterized by comprising a wiring structure film consisting of an insulation layer and a wiring layer, a first electrode pattern provided on one surface of the wiring structure film such that at least the side circumference thereof touches the insulation layer but at least the lower surface thereof does not touch the insulation layer and the surface of the insulation layer provided with the first electrode pattern is coplanar with the lower surface of the first electrode pattern, a second electrode pattern formed on the surface opposite to the first electrode pattern, an insulator film provided with an opening pattern being confined in the first electrode pattern, and a metal support provided on the surface of the insulator film.

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a semiconductor device mounting substrate used for mounting various devices such as semiconductor devices at a high density and realizing a high-density, high-speed and high-frequency module or system.And semiconductor package manufacturing method and substrate inspection methodRelated.
[0002]
[Prior art]
In recent years, with the increase in the number of terminals and the narrowing of the pitch due to the high speed and high integration of semiconductor devices, there is a demand for even higher densification and miniaturization of mounting wiring boards on which these semiconductor devices are mounted. At present, examples of mounting substrates often used include a ceramic substrate, a build-up substrate, and a tape substrate.
[0003]
The ceramic substrate includes an insulating substrate made of alumina or the like and a wiring conductor made of a high melting point such as W or Mo formed on the surface thereof, as disclosed in JP-A-8-330474. .
[0004]
Further, as disclosed in Japanese Patent Application Laid-Open No. 11-17058 and Japanese Patent No. 2679681, a build-up substrate is formed by using an organic resin as an insulating material on a printed circuit board, and performing etching and plating to form a fine pattern using copper wiring. Circuit is formed and multilayered.
[0005]
Further, the tape substrate is obtained by forming a copper wiring on a polyimide-based film or the like disclosed in JP-A-2000-58701.
[0006]
[Problems to be solved by the invention]
However, the conventional technique has the following problems.
[0007]
The ceramic substrate has a problem in that the ceramic constituting the insulating substrate has a hard and brittle property, so that damage such as chipping and cracking is likely to occur in a manufacturing process and a transporting process, thereby lowering the yield.
[0008]
The ceramic substrate is manufactured by printing wiring on a green sheet before firing, stacking the respective sheets, and firing. In this manufacturing process, since shrinkage is caused by firing at a high temperature, the fired substrate has a problem that a shape defect such as warpage, deformation, and dimensional variation is likely to occur. Due to the occurrence of such a shape defect, there is a problem that it is not possible to sufficiently cope with the strict flatness required for a circuit board having a high density and a substrate such as a flip chip. That is, such a shape defect hinders the increase in the number of pins, the density, and the miniaturization of the circuit, and the flatness of the mounting portion of the semiconductor device is lost, so that the connection between the semiconductor device and the substrate is lost. There is a problem that cracks, peeling, and the like are likely to occur in the broken portion, and the reliability of the semiconductor device is reduced.
[0009]
Further, in the build-up board, the board warps due to the difference in thermal expansion between the printed board used as the core material and the insulating resin film formed on the surface layer. This warping also becomes an obstacle when connecting a semiconductor device having a large number of pins, and as described above, hinders the increase in the density and miniaturization of the circuit and reduces the yield of the build-up substrate.
[0010]
Furthermore, a substrate using a polyimide-based tape or the like has a problem in that a positional shift due to expansion and contraction of a tape base material when mounting a semiconductor device is large, and it is not possible to sufficiently cope with high-density circuits.
[0011]
In order to solve these problems, there has been proposed a mounting wiring board in which a build-up structure is formed on a base material made of a metal plate as disclosed in Japanese Patent Application Laid-Open No. 2000-3980. However, since the external terminals are formed by etching, there is a problem that it is difficult to form the external terminals with a narrow pitch from the limit of the side etching amount control during the etching. In addition, when this mounting wiring board is mounted on an external board or device, stress is concentrated on the interface between the external terminal and the insulator film, resulting in an open defect, and sufficient mounting reliability is obtained. It will not be.
[0012]
The present invention has been made in view of the above-described problems, and can improve a conventional wiring board, realize high-density corresponding to a narrow pitch, can realize fineness, and have excellent mounting reliability. Semiconductor device mounting boardAnd a method of manufacturing a semiconductor package and a method of inspecting a substrate thereofThe purpose is to provide.
[0013]
[Means for Solving the Problems]
In order to achieve the above object, the present invention provides a semiconductor device mounting substrate as described below.And a method of manufacturing a semiconductor package and a method of inspecting a substrate thereofAdopted.
[0032]
Claims1The method of manufacturing a semiconductor device mounting substrate according to the step of forming a plurality of protrusions at desired positions on the surface of the metal support, and an insulating film in a region other than the protrusion formation region on the surface of the metal support Forming; forming a first electrode pattern on the insulator film; insulating the first electrode pattern so that the lower surface is in contact with the side surface of the first electrode pattern and the lower surface is flush with the lower surface of the first electrode pattern. Forming a layer, forming a wiring layer on the upper surface of the first electrode pattern on the side opposite to the surface where the lower surface of the first electrode pattern is exposed, and forming a wiring comprising the wiring layer and the insulating layer Forming a second electrode pattern on a surface of the structural film not in contact with the first electrode pattern, and forming a first opening in the metal support such that the insulator film and the protrusion are exposed. Removing the protrusions, Forming a second opening in the insulator film so that the first electrode pattern is exposed; and adjusting a shape of the opening of the insulator film.
[0033]
The method of manufacturing a semiconductor device mounting substrate according to claim 2, further comprising: forming a plurality of protrusions at desired positions on the surface of the metal support; and excluding the protrusion formation region on the surface of the metal support. Forming an insulator film on the insulator film; forming a first electrode pattern on the insulator film; forming a conductor pattern between and around the first electrode pattern; Forming an insulating layer so as to contact the periphery of the side surface and make the lower surface flush with the lower surface of the first electrode pattern; and forming the first electrode on the side opposite to the surface where the lower surface of the first electrode pattern is exposed. Forming a wiring layer on the upper surface of the electrode pattern, forming a second electrode pattern on a surface of the wiring structure film including the wiring layer and the insulating layer that is not in contact with the first electrode pattern, The insulator on the support Forming a first opening so that the projection is exposed, and forming a second opening in the insulating film so as to expose the first electrode pattern by removing the projection. And a step of adjusting the shape of the opening of the insulator film.
[0034]
The method of manufacturing a semiconductor device mounting substrate according to claim 3, further comprising: forming a plurality of protrusions at desired positions on the surface of the metal support; and excluding the protrusion formation region on the surface of the metal support. Forming an insulator film on the insulator film, forming a first electrode pattern on the insulator film, and forming a via at a desired position in a region where the opening of the metal support is not formed. Forming the conductor pattern between and around the first electrode pattern and so that the conductor pattern can be connected to the metal support via the via, and contacting the periphery of the side surface of the first electrode pattern; Forming an insulating layer such that the lower surface is flush with the lower surface of the first electrode pattern; and forming an insulating layer on the upper surface of the first electrode pattern opposite to the surface where the lower surface of the first electrode pattern is exposed. Form wiring layer Forming a second electrode pattern on a surface of the wiring structure film composed of the wiring layer and the insulating layer which is not in contact with the first electrode pattern; and forming the insulating film and the protrusion on the metal support. Forming a first opening so that the first electrode pattern is exposed, and forming a second opening in the insulator film so that the first electrode pattern is exposed; and The method includes a step of adjusting the shape of the opening of the insulator film.
[0035]
Claims4In the method for manufacturing a semiconductor device mounting substrate described in (1), the first electrode pattern and the conductor pattern are formed in the same step.
[0036]
Claims5The method for manufacturing a semiconductor device mounting substrate according to the above item, wherein at least one of the first Forming a thin film capacitor on the one electrode pattern.
[0037]
Claims6The method for manufacturing a semiconductor device mounting substrate according to the above, further comprising, before the step of forming the first electrode pattern, a step of forming a concave portion (29) in a region where the first opening is to be formed. Features.
[0038]
The method of manufacturing a semiconductor device mounting substrate according to claim 7, further comprising: forming a plurality of protrusions at desired positions on both surfaces of the metal support; and forming the protrusion formation regions on both surfaces of the metal support. Forming an insulating film in a region to be removed, and forming an insulating layer so as to be in contact with the periphery of the side surface of the first electrode pattern and the lower surface is flush with the lower surface of the first electrode pattern;
Forming a first electrode pattern on the insulator film; and forming a wiring layer on an upper surface of the first electrode pattern opposite to a surface where the lower surface of the first electrode pattern is exposed; Forming a second electrode pattern on a surface of the wiring structure film made of a wiring layer and the insulating layer that is not in contact with the first electrode pattern; Forming a second metal support; forming a first opening in the first and second metal supports so that the insulator films and the protrusions are exposed; Forming a second opening in the insulator film so as to expose the first electrode pattern by removing the protrusion; and adjusting a shape of the opening of the insulator film. .
[0039]
The method of manufacturing a semiconductor device mounting substrate according to claim 8, further comprising: forming a plurality of protrusions at desired positions on both surfaces of the metal support; and forming the protrusion formation regions on both surfaces of the metal support. Forming an insulator film in a region excluding the first electrode pattern, forming a first electrode pattern on the insulator film, forming a conductor pattern between and around the first electrode pattern, Forming an insulating layer in contact with the periphery of the side surface of the pattern and making the lower surface flush with the lower surface of the first electrode pattern; and forming the insulating layer on the side opposite to the surface where the lower surface of the first electrode pattern is exposed. Forming a wiring layer on the upper surface of the first electrode pattern, forming a second electrode pattern on a surface of the wiring structure film including the wiring layer and the insulating layer that is not in contact with the first electrode pattern, Hold the metal support horizontally Forming the first and second metal supports by dividing the first and second metal supports by half; and forming the first and second metal supports on the first and second metal supports so that the respective insulator films and the respective projections are exposed. Forming an opening, forming a second opening in the insulator film so as to expose the first electrode pattern by removing the protrusion, and changing an opening shape of the insulator film. It is characterized by including a trimming step.
[0040]
The method of manufacturing a semiconductor device mounting substrate according to claim 9, further comprising: forming a plurality of protrusions at desired positions on both surfaces of the metal support; and forming the protrusion formation regions on both surfaces of the metal support. Forming an insulator film in a region to be removed, forming a first electrode pattern on the insulator film, and forming a via at a desired position in a region where the opening of the metal support is not formed. Forming the conductor pattern between and around the first electrode pattern and around the side surface of the first electrode pattern so that the conductor pattern can be connected to the metal support via the via. Contacting and forming an insulating layer such that the lower surface is flush with the lower surface of the first electrode pattern; and forming the insulating layer on the opposite side of the surface where the lower surface of the first electrode pattern is exposed. Form wiring layer on top Forming a second electrode pattern on a surface of the wiring structure film made of the wiring layer and the insulating layer that is not in contact with the first electrode pattern; and dividing the metal support in half in the horizontal direction. Forming the first and second metal supports by forming a first opening in the first and second metal supports so that the insulator films and the projections are exposed. Removing the protrusion, forming a second opening in the insulator film so that the first electrode pattern is exposed, and adjusting the shape of the opening of the insulator film. It is characterized by the following.
[0041]
Further, in the method of manufacturing a semiconductor device mounting substrate according to claim 10, a step of laminating two first and second metal supports and a step of forming a desired surface of the first and second metal supports are performed. Forming a plurality of protrusions at positions, forming an insulator film in a region of the surface of the first and second metal supports other than the protrusion formation region, and forming the first and second metal support members; Forming a first electrode pattern on each of the insulator films on the metal support; and contacting a periphery of a side surface of each of the first electrode patterns on the first and second metal supports, and a lower surface of the first and second metal supports, Forming an insulating layer so as to be flush with the lower surface of the one electrode pattern; and forming the insulating layer on the opposite side of the surface of the first and second metal supports from which the lower surface of the first electrode pattern is exposed. Forming a wiring layer on the upper surface of the first electrode pattern Forming a second electrode pattern on a surface of the wiring structure film including the wiring layer and the insulating layer which is not in contact with the first electrode pattern; and forming the first and second metal supports. Halving in the horizontal direction, forming a first opening in the first and second metal supports so that the insulator films and the projections are exposed, and And forming a second opening in the insulator film so that the first electrode pattern is exposed, and a step of adjusting the shape of the opening of the insulator film.
[0042]
In the method of manufacturing a semiconductor device mounting substrate according to claim 11, two first and second metal supports are bonded to each other, and a desired surface of the first and second metal supports is formed. Forming a plurality of protrusions at positions, forming an insulator film in a region of the surface of the first and second metal supports other than the protrusion formation region, and forming the first and second metal support members; Forming a first electrode pattern on each of the insulator films on the metal support; and forming a conductor pattern between and around each of the first electrode patterns on the first and second metal supports. Forming an insulating layer in contact with a side surface of each of the first electrode patterns in the first and second metal supports, and a lower surface thereof is flush with a lower surface of the first electrode pattern; , The first and second metal supports Forming a wiring layer on the upper surface of the first electrode pattern on the side opposite to the surface of the body where the lower surface of the first electrode pattern is exposed; and forming the lower surface of the first electrode pattern not in contact with the insulating layer. Forming a second electrode pattern on a surface opposite to the exposed surface; dividing the first and second metal supports in half in the horizontal direction; Forming a first opening so that each of the insulator films and each of the protrusions are exposed on the metal support; and removing the protrusion to form a second opening so that the first electrode pattern is exposed. The method includes a step of forming an opening in the insulator film and a step of adjusting the shape of the opening of the insulator film.
[0043]
Claims12In the method for manufacturing a semiconductor device mounting substrate described in the above item, a step of laminating two first and second metal supports and a step of bonding a desired surface of the first and second metal supports (11a, 11b) are performed. Forming a plurality of protrusions (24) at positions, forming an insulator film (12) in a region excluding the protrusion formation region on both surfaces of the first and second metal supports, Forming a first electrode pattern (13) on each of the insulator films of the first and second metal supports;Forming a via at a desired position in a region where the opening of the metal support is not formed; and between and around each of the first electrode patterns in the first and second metal supports, and Forming the conductor pattern so that the conductor pattern can be connected to the metal support via the via; and contacting a periphery of a side surface of each of the first electrode patterns in the first and second metal supports, Forming an insulating layer so that the lower surface is flush with the lower surface of each of the first electrode patterns; and a surface of the first and second metal supports on which the lower surface of the first electrode pattern is exposed. Forming a wiring layer on the upper surface of the first electrode pattern on the side opposite to the first electrode pattern; and forming a second electrode pattern on a surface of the wiring structure film including the wiring layer and the insulating layer, which is not in contact with the first electrode pattern. To Forming, dividing the first and second metal supports in half in the horizontal direction, and exposing the insulator film and the protrusions on the first and second metal supports. Second 1 Forming an opening, forming a second opening in the insulator film so as to expose the first electrode pattern by removing the protrusion, and forming an opening in the insulator film. Characterized by including a step of preparing
[0044]
ClaimsThirteenThe method for manufacturing a semiconductor device mounting board according to the item 1, wherein the concave portion is formed in a region where the first opening is to be formed before the step of bonding the first and second metal supports (11a, 11b). (29) is characterized by having a step of forming.
[0045]
Claims14The method for manufacturing a semiconductor device mounting substrate according to the above, wherein at least one of the first electrode patterns is provided between the step of forming the first electrode pattern and the step of forming a wiring layer on the first electrode pattern. A step of forming a thin film capacitor thereon.
[0046]
ClaimsFifteenThe method for manufacturing a semiconductor device mounting substrate described in the above item, further comprising a step of forming a solder ball or a connection pin so that the first electrode pattern is connected at a desired position of the second electrode pattern.
[0047]
Claims16Wherein the metal support is made of at least one metal selected from the group consisting of stainless steel, iron, nickel, copper and aluminum, or an alloy thereof.
[0048]
Claims17In the method of manufacturing a semiconductor device mounting substrate described in (1), the protrusion is formed by one or a combination of plating, etching, conductive paste, and machining.
[0049]
Claims18The method for manufacturing a semiconductor package according to1-17A semiconductor device is connected to at least one surface of a semiconductor device mounting substrate manufactured by the method according to any one of the above.
[0050]
Claims19In the method of manufacturing a semiconductor package described in (1), the semiconductor device is flip-chip connected to one of a low-melting-point metal and a conductive resin.
[0051]
Claims20Inspection method of the semiconductor device mounting board described inClaims 1 to 17Forming a second electrode pattern on the metal support of the semiconductor mounting substrate manufactured by the method according to any one of the above, after selectively removing the metal support, as a contact terminal without removing the protrusion A continuity test is performed using the continuity test.
[0052]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. First, an embodiment of a semiconductor device mounting substrate and a semiconductor package according to the present invention will be described. Hereinafter, the semiconductor device mounting substrate is appropriately referred to as a “mounting substrate”.
[0053]
The first embodiment of the mounting board and the semiconductor package of the present invention will be described. 1A and 1B are diagrams showing a configuration of a semiconductor device mounting board according to the present embodiment, FIG. 1A is a schematic sectional view, and FIG. 1B is a schematic bottom view from the metal support 11 side. is there.
[0054]
The mounting substrate shown in FIGS. 1A and 1B has a first electrode pattern 13 on one surface of a wiring structure film 16 including an insulating layer 14 and a wiring layer 15, a second electrode pattern 17 on an opposite surface, and a first electrode pattern 17. An insulating film 12 is provided on a surface of the electrode pattern not in contact with the wiring structure film 16, and a metal support 11 is provided on a lower surface of the insulating film 12.
[0055]
In the first electrode pattern 13 of the present embodiment, the periphery of the side surface is in contact with the insulating layer 14, and the lower surface of the first electrode pattern 13 is in the same plane as the lower surface of the insulating layer 14. That is, the first electrode pattern 13 is embedded in the insulating layer 14 without the lower surface thereof being in contact with the insulating layer 14.
[0056]
The wiring structure film 16 is formed by alternately stacking wiring layers 15 made of wiring having a predetermined pattern and an insulating material filled between the wirings, and insulating layers 14 made of the insulating material. The wiring structure film 16 is laminated by a subtractive method, a semi-additive method, a full-additive method, or the like used in the build-up method.
[0057]
The subtractive method is a method of forming a circuit pattern by etching a copper foil on a substrate or a resin, as disclosed in, for example, Japanese Patent Application Laid-Open No. Hei 10-51105.
[0058]
In the semi-additive method, for example, as disclosed in Japanese Patent Application Laid-Open No. 9-64493, after forming a power supply layer, electrolytic plating is deposited in a resist, and after removing the resist, the power supply layer is etched to form a circuit pattern. Is the way.
[0059]
In the full additive method, as disclosed in, for example, JP-A-6-334334, a pattern is formed with a resist after activating the surface of a substrate or a resin, and this resist is used as an insulating layer by electroless plating. This is a method of forming a circuit pattern.
[0060]
The insulating layer 14 is formed of one or more organic resins selected from the group consisting of epoxy resin, epoxy acrylate resin, urethane acrylate resin, polyester resin, phenol resin, polyimide resin, BCB (benzocyclobutene), and PBO (polybenzoxazole). Is formed. In particular, an insulating material having a film strength (elastic modulus) of 70 MPa or more, an elongation at break of 5% or more, a glass transition temperature of 150 ° C. or more, and a thermal expansion coefficient of 60 ppm / ° C. or less (hereinafter abbreviated as “insulating material A” as appropriate) Or an insulating material having a film strength (elastic modulus) of 10 GPa or more, a thermal expansion coefficient of 30 ppm / ° C. or less, and a glass transition temperature of 150 ° C. or more (hereinafter abbreviated as “insulating material B” as appropriate). Is preferred. The thickness of one insulating layer 14 is preferably 8 μm or more.
[0061]
Here, the film strength (elastic modulus) and the breaking elongation are values measured by a tensile test of an insulating material in accordance with JIS K7161 (tensile property test). It is a value calculated from the intensity at a strain of 0.1% based on the above. The coefficient of thermal expansion is a value measured by a TMA method based on JIS C 6481, and the glass transition temperature is a value measured by a DMA method based on JIS C 6481.
[0062]
Examples of the insulating material A include an epoxy-based resin (manufactured by Hitachi Chemical; MCF-7000LX), a polyimide-based resin (manufactured by Nitto Denko; AP-6832C), a benzocyclobutene resin (manufactured by Dow Chemical; Cyclotene 4000 series), and polyphenylene ether. A resin (manufactured by Asahi Kasei; Zylon), a liquid crystal polymer film (manufactured by Kuraray; LCP-A), a thermosetting resin impregnated with an expanded porous fluororesin (manufactured by Japan Gore-Tex; MICROLAM600), and the like are preferable.
[0063]
Examples of the insulating material B include a glass cloth impregnated epoxy resin (manufactured by Hitachi Chemical; MCL-E-679), an aramid nonwoven fabric impregnated epoxy resin (manufactured by Shin-Kobe Electric Machinery; EA-541), and a stretched porous fluororesin impregnated thermosetting resin. (Manufactured by Japan Gore-Tex; MICROLAM400) and the like are suitable.
[0064]
As the insulating layer 14, one of these organic resins may be used for all the insulating layers 14 between the wiring layers 15, or two or more layers of the organic resin may be mixed to form the wiring layer 15. May be arranged. In this embodiment, the insulating layer 14 is formed of, for example, a polyimide resin. However, for example, the lowermost insulating layer 14 may be formed of a polyimide resin, and the second and subsequent layers may be formed of an epoxy resin.
[0065]
As the metal constituting the wiring in the wiring layer 15, copper is optimal from the viewpoint of cost, but at least one metal selected from the group consisting of gold, silver, aluminum and nickel, or an alloy thereof can also be used. In the present embodiment, the wiring in the wiring layer 15 is made of copper.
[0066]
The insulator film 12 has an opening in the insulator film 12 so as to be in contact with the lower surface of the first electrode pattern 13 and to be accommodated in the first electrode pattern, and the metal support 11 is provided on the lower surface of the insulator film 12. Has a function as a solder resist. There is no problem with the material of the insulator film 12 as long as it is an insulating material having a function as a solder resist. Further, the same material as the material used for the insulating layer 14 can be used.
[0067]
The second electrode pattern 17 is connected to the uppermost layer of the wiring layer 15, each layer of the wiring layer 15 is connected to each other via a via in the insulating layer 14, and the lowermost layer of the wiring layer 15 is The first electrode pattern 13 is connected to the first electrode pattern 13 via vias 14. In FIG. 1A, the second electrode pattern 17 is described as being formed in the insulating layer 14, but there is no problem if it is formed on the insulating layer 14 as shown in FIG. . Further, as shown in FIG. 2B, a solder resist 23 may be provided on the second electrode pattern 17 formed on the insulating layer 14.
[0068]
The metal support 11 is provided to reinforce the mounting substrate. By providing the metal support 11 on the mounting substrate, deformation such as warpage or undulation of the mounting substrate can be suppressed. Package mounting reliability can be ensured. The metal support 11 may be provided in a grid shape or a mesh shape as long as the first electrode pattern 13 is exposed, in addition to the frame shape as shown in FIG.
[0069]
The metal support 11 is desirably a metal that can impart sufficient strength to the mounting substrate and has heat resistance to withstand heat treatment during mounting of the mounting substrate or the semiconductor package.
[0070]
This material can be composed of at least one metal selected from the group consisting of stainless steel, iron, nickel, copper and aluminum or an alloy thereof, but stainless steel and copper alloy are most suitable in terms of handling. Further, the thickness of the metal support 11 is preferably 0.1 to 1.5 mm. Since the metal support 11 is a metal and has conductivity, it can be energized.
[0071]
According to the present invention, since the first electrode pattern 13 is embedded in the insulating layer 14, stress and strain on the first electrode pattern 13 are alleviated, and the concentration of stress can be reduced. Since it functions as a solder resist, it is possible to prevent the displacement of the ball at the time of placing the solder ball, and to enhance the workability. Due to these effects, the stress concentration at the joint can be reduced after the installation, and a mounting board excellent in the installation stability and the mounting reliability with the external board can be obtained.
[0072]
Next, a mounting board and a semiconductor package according to a second embodiment of the present invention will be described. FIG. 3 is a schematic sectional view showing the configuration of the semiconductor device mounting board according to the present embodiment. The configuration of the first embodiment is the same as that of the first embodiment except that a conductor pattern 18 is provided between and around the first electrode pattern 13 and the conductor pattern 18 is connected to the wiring layer 15 in the wiring structure film 16 by a via. It is the same as the mounting board.
[0073]
Copper is optimal for the metal constituting the conductor pattern 18 from the viewpoint of cost, but at least one metal selected from the group consisting of gold, silver, aluminum and nickel or an alloy thereof can also be used. In the present embodiment, the wiring in the conductor pattern 18 is made of copper.
[0074]
Further, as shown in FIG. 4, since the metal support 11 is a metal and can be used electrically, a structure in which the conductor pattern 18 and the metal support 11 are connected via the via 19 may be used.
[0075]
According to the present invention, since the insulating film 12 is provided, an electric circuit (particularly, a power supply or a ground) using the conductor pattern 18 can be stably provided on the plane on which the first electrode pattern 13 is formed. The degree of freedom in circuit design can be increased, the electrical characteristics can be improved, and the number of layers can be reduced when the mounting substrate is a multilayer stack.
[0076]
Next, a third embodiment of the mounting board according to the present invention will be described. FIG. 5 is a schematic sectional view showing the configuration of the semiconductor device mounting board according to the present embodiment. The configuration other than having the capacitor 22 composed of the dielectric layer 20 provided on the upper surface of the first electrode pattern 13 and the conductor layer 21 electrically connected to the wiring structure film 16 on the upper surface of the dielectric layer 20 is the same as that of the first embodiment. This is the same as the mounting board of the embodiment or the second embodiment.
[0077]
The dielectric layer 20 of the capacitor 22 is formed by a sputtering method, an evaporation method, a CVD method, an anodic oxidation method, or the like. The material forming the capacitor 22 is titanium oxide, tantalum oxide, Al₂O₃, SiO₂, Nb₂O₅, BST (Ba_xSr_1-xTiO₃), PZT (PbZr_xTi_1-xO₃), PLZT (Pb_1-yLa_yZr_xTi_1-xO₃) Or SrBi₂Ta₂O₉It is preferable to use a perovskite-based material such as However, for all of the above compounds, 0 ≦ x ≦ 1 and 0 <y <1. Further, the capacitor 22 may be made of an organic resin or the like that can realize a desired dielectric constant.
[0078]
According to the present invention, by forming such a capacitor, transmission noise can be reduced, and a mounting board optimal for high-speed operation can be obtained.
[0079]
Next, a fourth embodiment of the mounting substrate and the semiconductor package according to the present invention will be described. FIG. 6 is a schematic sectional view showing the configuration of the semiconductor device mounting board according to the present embodiment. The first embodiment and the second embodiment, except that the metal support 11 has a projection 24 and is provided on the entire lower surface of the insulator film 12 and the upper part of the projection 24 is in contact with the first electrode pattern 13. This is the same as the mounting board of the third embodiment or the third embodiment.
[0080]
The projections 24 are formed by one or a combination of plating, etching, conductive paste, and machining. In addition, as shown in FIGS. 7A and 7B, in the mounting substrate having the conductor pattern 18, a configuration in which conduction between the metal support 11 and the conductor pattern 18 is obtained by the protrusion 24 is also possible.
[0081]
In this configuration, the projection 24 and the conductor pattern 18 need to be electrically stable. Further, even in the configuration shown in FIG. 7B in which the metal support 11 is selectively removed and the insulating film 12 is opened, a configuration in which conduction between the metal support 11 and the conductor pattern 18 is obtained by the protrusion 24 can be adopted.
[0082]
According to the present invention, electrical continuity between the metal support 11 and the first electrode pattern 13 and the conductor pattern 18 is ensured, and a circuit open inspection of the mounting substrate becomes possible. In addition, since the entire lower surface of the mounting substrate is made of the metal support 11, the mounting substrate can be connected to the second electrode pattern 17 of the mounting substrate at the time of mounting the semiconductor device by using a solder ball, a low melting point metal, wire bonding, or the like. The flatness is more sufficiently secured, and the mounting reliability of the semiconductor device can be improved. Further, if the entire lower surface is the metal support 11, the quality of the mounting substrate cannot be determined before mounting the semiconductor device. Therefore, the metal support 11 is so arranged that only the necessary projections 24 do not come into contact with the metal support 11. Can be exposed and used for inspection by selective removal.
[0083]
Using this method, the flatness of the metal support 11 is ensured, and the quality of the mounting substrate can be determined. Further, since the projections 24 are used, the first electrode pattern 13 can be used when removing the metal support 11. No damage done. Also, regardless of whether the method of performing pass / fail selection is used or not, the first electrode pattern 13 may be exposed by selectively removing the metal support 11 and the protrusions 24 in a frame shape or the like after forming the semiconductor package. it can. When removing the metal support 11, if the semiconductor package to be formed has sufficient strength to ensure sufficient mounting reliability on an external board even without the metal support 11, the metal support 11 is completely removed. It doesn't matter.
[0084]
Next, a fifth embodiment of the mounting substrate and the semiconductor package according to the present invention will be described. FIG. 8 is a schematic cross-sectional view showing a configuration of a flip-chip semiconductor package according to the present embodiment.
[0085]
The semiconductor package of the present invention is obtained by mounting the semiconductor device 25 on the mounting substrate described in the first, second, third, or fourth embodiment of the present invention. Can be formed. The electrical connection portion such as the pad of the semiconductor device 25 and the wiring of the mounting substrate can be electrically connected by various methods, for example, flip chip, wire bonding, and tape bonding.
[0086]
As shown in FIG. 8A, the semiconductor package of the present invention can be configured to include a metal support 11 on the entire lower surface of the mounting substrate. When mounting on another board or the like in this mode, the metal support 11 and the protrusion 24 are removed so that the first electrode pattern 13 is exposed. As a form in which the first electrode pattern 13 is exposed, as shown in FIG. 8B, the metal support 11 is processed and left in a frame shape, a grid shape, or a mesh shape on the lower surface of the insulator film 12, and the semiconductor package is left. Can be used for reinforcement. In the case where the metal support 11 has sufficient strength without forming such reinforcement, the metal support 11 may be entirely removed to obtain the form shown in FIG. 8C.
[0087]
Further, as shown in FIG. 8D, a mode in which the semiconductor device 25 is mounted on the first electrode pattern 13 after the metal support 11 is selectively removed to expose the first electrode pattern 13 can be adopted. At this time, the metal support 11 has a function of reinforcing the semiconductor package and suppressing warping and undulation of the mounting substrate with the insulator film 12 and the wiring structure film 16 being in tension. Further, if necessary, the semiconductor device 25 may be mounted on both sides of the mounting substrate as shown in FIG.
[0088]
Further, in the semiconductor package of the present invention, as shown in FIG. 8, the pad 26 provided on the semiconductor device 25 and the first electrode pattern 13 or the second electrode pattern 17 of the mounting substrate of the present invention Electrical connection can be made via the metal bumps 27. At this time, an underfill resin 28 can be filled between the semiconductor device 25 and the mounting substrate as needed.
[0089]
In addition, the semiconductor device 25 may be sealed with the mold resin 30 or may have a form in which a heat spreader 32 and a heat sink for improving heat dissipation are attached. Further, when the semiconductor device 25 is mounted on the first electrode pattern 13, the metal support 11 may be used as a spacer 31 for a heat sink.
[0090]
Hereinafter, embodiments of a method for manufacturing a semiconductor device mounting substrate and a semiconductor package according to the present invention will be described. FIGS. 9A to 9F are partial cross-sectional views illustrating a method of manufacturing the mounting board according to the first embodiment of the present invention in the order of steps. The present embodiment is for manufacturing the mounting substrate according to the first embodiment (FIG. 1) of the present invention. Note that cleaning and heat treatment are appropriately performed between each step.
[0091]
First, as shown in FIG. 9A, one or a combination of plating, etching, conductive paste, and machining is applied to the surface of a metal support 11 having a thickness of 0.1 to 1.5 mm. As a result, a projection 24 is formed. When the protrusions 24 are removed by etching, it is possible to form any one metal of gold, silver, platinum, and palladium on the uppermost layer of the protrusions 24 for an etching barrier to the first electrode pattern 13. .
[0092]
In the present embodiment, the metal support 11 uses a copper alloy plate (Kobe Steel: KFC series), and the projections 24 are formed of nickel by a plating method. The projections 24 are formed by laminating a plating resist with a thickness of 30 μm on the metal support 11 and forming an opening pattern of the plating resist at a predetermined location of the projections 24 by exposure, development, or laser as a photolithography technique. Then, 25 μm of electrolytic nickel plating was deposited.
[0093]
Next, as shown in FIG. 9B, an insulator film 12 and a first electrode pattern 13 are formed. When the resin for the insulator film 12 is in a liquid state, the insulator film 12 is formed by a spin coating method, a die coating method, a curtain coating method, a printing method, or the like. In the case of a dry film or a copper foil with resin, after laminating by a laminating method or the like, a treatment such as drying is performed to harden. At this time, since the vertices of the projections 24 need to appear on the surface of the insulator film 12, in the case of a liquid resin, if photosensitive, patterning is performed by photolithography. If is insufficient, it is adjusted by polishing.
[0094]
In the case of a dry film or a copper foil with a resin, a cushion may be provided on the carrier side of the film so that the apex of the projection 24 protrudes during lamination. In the case of a dry film, it may be prepared by polishing after lamination.
[0095]
After the formation of the insulator film 12, the first electrode pattern 13 is formed by a subtractive method, a semi-additive method, a full-additive method, or the like. In particular, when the resin of the copper foil with resin is used as the insulating film 12, the copper foil used as a carrier can be patterned by a subtractive method.
[0096]
When the thickness of the copper foil is as thin as 2 μm or less, patterning by a semi-additive method using this copper foil as a power supply layer is also possible. In the present embodiment, the first electrode pattern 13 is formed by patterning the insulator film 12 using a copper foil with resin (Sumitomo Bakelite; APL-4501; copper foil thickness, 18 μm) and the copper foil by a subtractive method. Formed.
[0097]
Next, as shown in FIG. 9C, an insulating layer 14 and a wiring layer 15 are formed. The method of forming the insulating layer 14 is as follows: if the insulating resin forming the insulating layer 14 is liquid, the insulating resin is laminated by a spin coating method, a die coating method, a curtain coating method, a printing method, or the like, and the insulating resin is a dry film. Then, after laminating the insulating resin by a laminating method or the like, the insulating resin is solidified by performing a treatment such as drying.
[0098]
Then, if the insulating resin is photosensitive, by a photolithography process or the like, or if the insulating resin is non-photosensitive, by a laser processing method or the like, the insulating resin is patterned to form a via hole, and cured. The insulating resin is cured to form the insulating layer 14. Next, a wiring pattern is formed by a subtractive method, a semi-additive method, a full-additive method, or the like, and the wiring layer 15 is formed.
[0099]
Next, as shown in FIG. 9D, the step of forming the insulating layer 13 and the step of forming the wiring layer 14 by a subtractive method, a semi-additive method, a full-additive method or the like are repeated to form the wiring structure film 16 and the surface layer. The second electrode pattern 17 is formed. In the present embodiment, an aramid nonwoven fabric impregnated epoxy resin (manufactured by Shin Kobe Electric; EA-541) is used for the insulating layer 13, and the wiring layer 14 uses a semi-additive method using 2 μm-thick electroless copper plating as a power supply layer. .
[0100]
Next, as shown in FIG. 9E, the metal support 11 is selectively removed by etching. As a removing method, an etching resist having an opening at an area to be etched is formed. If the etching resist is liquid, the etching resist is laminated by a spin coating method, a die coating method, a curtain coating method, a printing method, or the like, and if the etching resist is a dry film, the etching resist is laminated by a lamination method or the like, The etching resist is solidified by performing processing such as drying, and the etching resist is patterned by a photolithography process or the like if the etching resist is photosensitive, or is patterned by a laser processing method or the like if the etching resist is non-photosensitive.
[0101]
After that, using the etching resist as a mask, the metal support 11 is etched until the insulator film 11 and the projections 24 are exposed. In the present embodiment, the copper alloy plate was selectively removed using an alkali copper etching solution containing ammonia as a main component (Meltex; A process).
[0102]
Next, as shown in FIG. 9F, the protrusions 24 are selectively removed by etching or laser. A laser may be used to adjust the shape of the opening after the etching. After removing the projections 24, the exposed surface of the first electrode pattern 13 is normalized to obtain a mounting substrate. In the present embodiment, the nickel forming the projections 24 is removed using an etching solution in which sulfuric acid: hydrogen peroxide solution: pure water = 1: 1: 10.
[0103]
This mounting substrate is the same as the mounting substrate according to the first embodiment of the present invention, and according to the above-described manufacturing method, this mounting substrate can be efficiently manufactured. Further, according to the manufacturing method according to the present embodiment, since the wiring structure film 16 is stacked using the flat metal support 11 as a substrate, the flatness of the wiring structure film 16 can be improved, so that a stable stacking can be achieved. Becomes possible.
[0104]
Although the mounting substrate can be formed without forming the projections 24, the flatness of the metal support 11 is reduced as in the effect of the mounting substrate described in the fourth embodiment of the present invention. Before the semiconductor device is mounted on the second electrode pattern 17 by utilizing the method, it is impossible to determine the quality of the mounting substrate. Since the quality of the mounting substrate is indispensable, it is impossible to mount the semiconductor device using the flatness of the metal support 11 by the method without the projections 24.
[0105]
Next, a second embodiment of a method for manufacturing a semiconductor device mounting substrate and a semiconductor package according to the present invention will be described. FIGS. 10A to 10D are partial cross-sectional views illustrating a method of manufacturing a mounting board according to the second embodiment of the present invention in the order of steps.
[0106]
This embodiment is for manufacturing a mounting substrate according to a second embodiment (FIG. 3) of the present invention. Note that cleaning and heat treatment are appropriately performed between each step. The conductor pattern 18 is provided between and around the first electrode patterns 13, and the conductor pattern 18 is connected to the wiring layer 15 in the wiring structure film 16 by a via. This is the same as the method of manufacturing the mounting board of the embodiment.
[0107]
First, as shown in FIG. 10A, one or a combination of one of plating, etching, conductive paste, and machining is applied to the surface of a metal support 11 having a thickness of 0.1 to 1.5 mm. As a result, a projection 24 is formed. When the protrusions 24 are removed by etching, it is possible to form any one metal of gold, silver, platinum, and palladium on the uppermost layer of the protrusions 24 for an etching barrier to the first electrode pattern 13. .
[0108]
In the present embodiment, the metal support 11 uses a copper alloy plate (Kobe Steel: KFC series), and the projections 24 are formed of nickel by a plating method. The projections 24 are formed by laminating a plating resist with a thickness of 30 μm on the metal support 11 and forming an opening pattern of the plating resist at a predetermined location of the projections 24 by exposure, development, or laser as a photolithography technique. Then, 25 μm of electrolytic nickel plating was deposited.
[0109]
Next, as shown in FIG. 10B, an insulator film 12 and a first electrode pattern 13 are formed. When the resin for the insulator film 12 is in a liquid state, the insulator film 12 is formed by a spin coating method, a die coating method, a curtain coating method, a printing method, or the like. In the case of a dry film or a copper foil with resin, after laminating by a laminating method or the like, a treatment such as drying is performed to harden. At this time, since the vertices of the projections 24 need to appear on the surface of the insulator film 12, in the case of a liquid resin, if photosensitive, patterning is performed by photolithography. If is insufficient, it is adjusted by polishing.
[0110]
In the case of a dry film or a copper foil with a resin, a cushion may be provided on the carrier side of the film so that the apex of the projection 24 protrudes during lamination. In the case of a dry film, it may be prepared by polishing after lamination.
[0111]
After the formation of the insulator film 12, the first electrode pattern 13 is formed by a subtractive method, a semi-additive method, a full-additive method, or the like. In particular, when the resin of the copper foil with resin is used as the insulating film 12, the copper foil used as a carrier can be patterned by a subtractive method.
[0112]
When the thickness of the copper foil is as thin as 2 μm or less, patterning by a semi-additive method using this copper foil as a power supply layer is also possible. In the present embodiment, the first electrode pattern 13 is formed by patterning the insulator film 12 using a copper foil with resin (Sumitomo Bakelite; APL-4501; copper foil thickness, 18 μm) and the copper foil by a subtractive method. Formed.
[0113]
Next, as shown in FIG. 10C, a conductor pattern 18 is formed between and around the first electrode patterns 13. The conductor pattern 18 is formed by a subtractive method, a semi-additive method, a full-additive method, or the like. In the present embodiment, after forming the first electrode pattern 13, electroless copper plating is deposited by 2 μm and formed using a semi-additive method using this as a power supply layer.
[0114]
Next, as shown in FIG. 10D, an insulating layer 14 and a wiring layer 15 are formed. The method of forming the insulating layer 14 is as follows: if the insulating resin forming the insulating layer 14 is liquid, the insulating resin is laminated by a spin coating method, a die coating method, a curtain coating method, a printing method, or the like, and the insulating resin is a dry film. Then, after laminating the insulating resin by a laminating method or the like, the insulating resin is solidified by performing a treatment such as drying.
[0115]
Then, if the insulating resin is photosensitive, by a photolithography process or the like, or if the insulating resin is non-photosensitive, by a laser processing method or the like, the insulating resin is patterned to form a via hole, and cured. The insulating resin is cured to form the insulating layer 14.
[0116]
Next, a wiring pattern is formed by a subtractive method, a semi-additive method, a full-additive method, or the like, and the wiring layer 15 is formed. In the present embodiment, an aramid nonwoven fabric impregnated epoxy resin (manufactured by Shin Kobe Electric; EA-541) is used for the insulating layer 13, and the wiring layer 14 uses a semi-additive method using 2 μm-thick electroless copper plating as a power supply layer. . Subsequent steps are the same as the steps after FIG. 9D of the first embodiment of the present invention.
[0117]
On the other hand, as shown in FIGS. 11A and 11B, the first electrode pattern 13 and the conductor pattern 18 may be simultaneously formed. FIG. 11 shows only steps different from those in FIG. This method has an effect of improving alignment accuracy between the first electrode pattern 13 and the conductor pattern 18 and an effect of reducing costs by reducing the number of steps.
[0118]
First, as shown in FIG. 11A, one or a combination of plating, etching, conductive paste, and machining is applied to the surface of a metal support 11 having a thickness of 0.1 to 1.5 mm. As a result, a projection 24 is formed. When the protrusions 24 are removed by etching, it is possible to form any one metal of gold, silver, platinum, and palladium on the uppermost layer of the protrusions 24 for an etching barrier to the first electrode pattern 13. .
[0119]
In the present embodiment, the metal support 11 uses a copper alloy plate (Kobe Steel: KFC series), and the projections 24 are formed of nickel by a plating method. The projections 24 are formed by laminating a plating resist with a thickness of 30 μm on the metal support 11 and forming an opening pattern of the plating resist at a predetermined location of the projections 24 by exposure, development, or laser as a photolithography technique. Then, 25 μm of electrolytic nickel plating was deposited.
[0120]
Next, as shown in FIG. 11B, an insulator film 12, a first electrode pattern 13, and a conductor pattern 18 are formed. When the resin for the insulator film 12 is in a liquid state, the insulator film 12 is formed by a spin coating method, a die coating method, a curtain coating method, a printing method, or the like. In the case of a dry film or a copper foil with resin, after laminating by a laminating method or the like, a treatment such as drying is performed to harden. At this time, since the vertices of the projections 24 need to appear on the surface of the insulator film 12, in the case of a liquid resin, if photosensitive, patterning is performed by photolithography. If is insufficient, it is adjusted by polishing.
[0121]
In the case of a dry film or a copper foil with a resin, a cushion may be provided on the carrier side of the film so that the apex of the projection 24 protrudes during lamination. In the case of a dry film, it may be prepared by polishing after lamination.
[0122]
After the insulator film 12 is formed, the first electrode pattern 13 and the conductor pattern 18 are formed by a subtractive method, a semi-additive method, a full-additive method, or the like. In particular, when the resin of the copper foil with resin is used as the insulating film 12, the copper foil used as a carrier can be patterned by a subtractive method. When the thickness of the copper foil is as thin as 2 μm or less, patterning by a semi-additive method using this copper foil as a power supply layer is also possible.
[0123]
In the present embodiment, the insulating film 12 using a copper foil with a resin (Sumitomo Bakelite; APL-4501; copper foil thickness, 18 μm) and the copper foil by a subtractive method are used to pattern the first electrode pattern 13, The conductor pattern 18 was formed.
[0124]
The state formed in this step is the same as that in FIG. 10C, and the subsequent steps are the steps after FIG. 10D.
[0125]
This mounting substrate is the same as the mounting substrate according to the second embodiment of the present invention, and according to the above-described manufacturing method, this mounting substrate can be efficiently manufactured. Further, the mounting substrate has the same effect as in the first embodiment of the present invention as it is, and further has the effect of further increasing the wiring density and reducing the number of stacked layers by forming the conductor pattern 18.
[0126]
Next, a third embodiment of the method for manufacturing a semiconductor device mounting substrate and a semiconductor package according to the present invention will be described. 12A to 12C are partial cross-sectional views illustrating a method of manufacturing a mounting board according to the third embodiment of the present invention in the order of steps. This embodiment is for manufacturing a mounting substrate according to a second embodiment (FIG. 4) of the present invention. Note that cleaning and heat treatment are appropriately performed between each step. The configuration other than that the conductor pattern 18 is connected to the metal support 11 by the via 19 is the same as the manufacturing method of the mounting board according to the second embodiment of the present invention.
[0127]
First, as shown in FIG. 12A, one or a combination of plating, etching, conductive paste, and machining is applied to the surface of a metal support 11 having a thickness of 0.1 to 1.5 mm. As a result, a projection 24 is formed. When the protrusions 24 are removed by etching, it is possible to form any one metal of gold, silver, platinum, and palladium on the uppermost layer of the protrusions 24 for an etching barrier to the first electrode pattern 13. .
[0128]
In the present embodiment, the metal support 11 uses a copper alloy plate (Kobe Steel: KFC series), and the projections 24 are formed of nickel by a plating method. The projections 24 are formed by laminating a plating resist with a thickness of 30 μm on the metal support 11 and forming an opening pattern of the plating resist at a predetermined location of the projections 24 by exposure, development, or laser as a photolithography technique. Then, 25 μm of electrolytic nickel plating was deposited.
[0129]
Next, as shown in FIG. 12B, an insulator film 12, a first electrode pattern 13, and a via 19 are formed. When the resin for the insulator film 12 is in a liquid state, the insulator film 12 is formed by a spin coating method, a die coating method, a curtain coating method, a printing method, or the like. In the case of a dry film or a copper foil with resin, after laminating by a laminating method or the like, a treatment such as drying is performed to harden. At this time, since the vertices of the projections 24 need to appear on the surface of the insulator film 12, in the case of a liquid resin, if photosensitive, patterning is performed by photolithography. If is insufficient, it is adjusted by polishing.
[0130]
In the case of a dry film or a copper foil with a resin, a cushion may be provided on the carrier side of the film so that the apex of the projection 24 protrudes during lamination. In the case of a dry film, it may be prepared by polishing after lamination.
[0131]
After the formation of the insulator film 12, the first electrode pattern 13 is formed by a subtractive method, a semi-additive method, a full-additive method, or the like. In particular, when the resin of the copper foil with resin is used as the insulating film 12, the copper foil used as a carrier can be patterned by a subtractive method. When the thickness of the copper foil is as thin as 2 μm or less, patterning by a semi-additive method using this copper foil as a power supply layer is also possible.
[0132]
Further, a via 19 is formed so as to expose the metal support 11 by using a method such as photolithography, laser, or dry etching. When patterning the insulator film 12, the vias 19 may be simultaneously patterned by photolithography if photosensitive, or by laser or dry etching if non-photosensitive.
[0133]
In this embodiment, the first electrode pattern 13 is formed by patterning the insulating film 12 using a copper foil with resin (Sumitomo Bakelite; APL-4501; copper foil thickness, 18 μm) and the copper foil by a subtractive method. A via 19 having a via diameter of 80 μm was formed using a carbon dioxide laser.
[0134]
Next, as shown in FIG. 12C, a conductor pattern 18 is formed between and around the first electrode patterns 13 so as to be connectable to the metal support 11 by vias 19. The conductor pattern 18 is formed by a subtractive method, a semi-additive method, a full-additive method, or the like. In the present embodiment, after forming the first electrode pattern 13, electroless copper plating is deposited by 2 μm and formed using a semi-additive method using this as a power supply layer.
[0135]
The state formed in this step is the same as that in FIG. 10C, and the subsequent steps are the steps after FIG. 10D.
[0136]
Further, as shown in FIG. 13, the first electrode pattern 13 and the conductor pattern 18 may be formed simultaneously. This method has an effect of improving alignment accuracy between the first electrode pattern 13 and the conductor pattern 18 and an effect of reducing costs by reducing the number of steps.
[0137]
First, as shown in FIG. 13A, one or a combination of one of plating, etching, conductive paste, and machining is applied to the surface of a metal support 11 having a thickness of 0.1 to 1.5 mm. As a result, a projection 24 is formed. When the protrusions 24 are removed by etching, it is possible to form any one metal of gold, silver, platinum, and palladium on the uppermost layer of the protrusions 24 for an etching barrier to the first electrode pattern 13. .
[0138]
In the present embodiment, the metal support 11 uses a copper alloy plate (Kobe Steel: KFC series), and the projections 24 are formed of nickel by a plating method. The projections 24 are formed by laminating a plating resist with a thickness of 30 μm on the metal support 11 and forming an opening pattern of the plating resist at a predetermined location of the projections 24 by exposure, development, or laser as a photolithography technique. Then, 25 μm of electrolytic nickel plating was deposited.
[0139]
Next, as shown in FIG. 13B, a via 19 of the insulator film 12 is formed. When the resin for the insulator film 12 is in a liquid state, the insulator film 12 is formed by a spin coating method, a die coating method, a curtain coating method, a printing method, or the like. In the case of a dry film or a copper foil with resin, after laminating by a laminating method or the like, a treatment such as drying is performed to harden. At this time, since the vertices of the projections 24 need to appear on the surface of the insulator film 12, in the case of a liquid resin, if photosensitive, patterning is performed by photolithography. If is insufficient, it is adjusted by polishing.
[0140]
In the case of a dry film or a copper foil with a resin, a cushion may be provided on the carrier side of the film so that the apex of the projection 24 protrudes during lamination. In the case of a dry film, it may be prepared by polishing after lamination.
[0141]
Further, a via 19 is formed so as to expose the metal support 11 by using a method such as photolithography, laser, or dry etching. At the time of patterning the insulator film 12, the vias 19 may be simultaneously patterned by photolithography if photosensitive, or by laser or dry etching if non-photosensitive. In the case of a copper foil with resin, the via 19 is formed by etching the copper foil and then using a laser.
[0142]
In the present embodiment, the insulating film 12 using a copper foil with a resin (Sumitomo Bakelite; APL-4501; copper foil thickness, 18 μm), and etching the copper foil and then using a carbon dioxide gas laser to form a via diameter of 80 μm. Via 19 was formed.
[0143]
Next, as shown in FIG. 13C, the first electrode pattern 13 and the conductor pattern 18 are formed by a subtractive method, a semi-additive method, a full-additive method, or the like. In the present embodiment, electroless copper plating is deposited to a thickness of 2 μm and formed by using a semi-additive method using this as a power supply layer. The state formed in this step is the same as that in FIG. 10C, and the subsequent steps are the steps after FIG. 10D.
[0144]
This mounting substrate is the same as the mounting substrate according to the second embodiment of the present invention, and according to the above-described manufacturing method, this mounting substrate can be efficiently manufactured. In addition, the mounting substrate inherits the effects of the first and second embodiments of the present invention as it is, and furthermore, the conductor pattern 18 is connected to the metal support 11 so that the metal support 11 Since the second embodiment is also used as an electric circuit, the second embodiment of the present invention has the effects of improving the wiring density and reducing the number of layers.
[0145]
Next, a fourth embodiment of a method for manufacturing a semiconductor device mounting substrate and a semiconductor package according to the present invention will be described. 14A to 14C are partial cross-sectional views illustrating a method of manufacturing a mounting board according to the fourth embodiment of the present invention in the order of steps. This embodiment is for manufacturing a mounting substrate according to a fourth embodiment (FIG. 7) of the present invention. Note that cleaning and heat treatment are appropriately performed between each step. The configuration other than that the via 19 connecting the conductor pattern 18 to the metal support 11 uses the protrusion 24 is the same as the manufacturing method of the mounting board according to the second embodiment of the present invention.
[0146]
First, as shown in FIG. 14A, one or a combination of plating, etching, conductive paste, and machining is applied to the surface of a metal support 11 having a thickness of 0.1 to 1.5 mm. As a result, a projection 24 is formed. When the protrusions 24 are removed by etching, it is possible to form any one metal of gold, silver, platinum, and palladium on the uppermost layer of the protrusions 24 for an etching barrier to the first electrode pattern 13. .
[0147]
In the present embodiment, the metal support 11 uses a copper alloy plate (Kobe Steel: KFC series), and the projections 24 are formed of nickel by a plating method. The projections 24 are formed by laminating a plating resist with a thickness of 30 μm on the metal support 11 and forming an opening pattern of the plating resist at a predetermined location of the projections 24 by exposure, development, or laser as a photolithography technique. Then, 25 μm of electrolytic nickel plating was deposited.
[0148]
Next, as shown in FIG. 14B, the insulator film 12, the first electrode pattern 13, and the conductor pattern 18 are formed. When the resin for the insulator film 12 is in a liquid state, the insulator film 12 is formed by a spin coating method, a die coating method, a curtain coating method, a printing method, or the like. In the case of a dry film or a copper foil with resin, after laminating by a laminating method or the like, a treatment such as drying is performed to harden. At this time, since the vertices of the projections 24 need to appear on the surface of the insulator film 12, in the case of a liquid resin, if photosensitive, patterning is performed by photolithography. If is insufficient, it is adjusted by polishing.
[0149]
In the case of a dry film or a copper foil with a resin, a cushion may be provided on the carrier side of the film so that the apex of the projection 24 protrudes during lamination. In the case of a dry film, it may be prepared by polishing after lamination.
[0150]
After the insulator film 12 is formed, the first electrode pattern 13 and the conductor pattern 18 are formed by a subtractive method, a semi-additive method, a full-additive method, or the like. In particular, when the resin of the copper foil with resin is used as the insulating film 12, the copper foil used as a carrier can be patterned by a subtractive method.
[0151]
When the thickness of the copper foil is as thin as 2 μm or less, patterning by a semi-additive method using this copper foil as a power supply layer is also possible. In addition, the first electrode pattern 13 and the conductor pattern 18 may be formed in separate steps or in the same step. When they are formed separately, the yield is improved by adapting the process according to the pattern to be formed. When they are formed at the same time, the effects of improving the alignment accuracy of the first electrode pattern 13 and the conductor pattern 18 and reducing the number of steps are obtained. is there.
[0152]
In the present embodiment, the insulating film 12 using a copper foil with a resin (Sumitomo Bakelite; APL-4501; copper foil thickness, 18 μm) and the copper foil by a subtractive method are used to pattern the first electrode pattern 13, The conductor pattern 18 was formed.
[0153]
Next, as shown in FIG. 14C, an insulating layer 14 and a wiring layer 15 are formed. The method of forming the insulating layer 14 is as follows: if the insulating resin forming the insulating layer 14 is liquid, the insulating resin is laminated by a spin coating method, a die coating method, a curtain coating method, a printing method, or the like, and the insulating resin is a dry film. Then, after laminating the insulating resin by a laminating method or the like, the insulating resin is solidified by performing a treatment such as drying.
[0154]
Then, if the insulating resin is photosensitive, by a photolithography process or the like, or if the insulating resin is non-photosensitive, by a laser processing method or the like, the insulating resin is patterned to form a via hole, and cured. The insulating resin is cured to form the insulating layer 14.
[0155]
Next, a wiring pattern is formed by a subtractive method, a semi-additive method, a full-additive method, or the like, and the wiring layer 15 is formed. In the present embodiment, an aramid nonwoven fabric impregnated epoxy resin (manufactured by Shin Kobe Electric; EA-541) is used for the insulating layer 13, and the wiring layer 14 uses a semi-additive method using 2 μm-thick electroless copper plating as a power supply layer. . The state formed in this step is the same as that in FIG. 10C, and the subsequent steps are the steps after FIG. 10D.
[0156]
This mounting board is the same as the mounting board according to the fourth embodiment of the present invention, and according to the above-described manufacturing method, this mounting board can be manufactured efficiently. In addition, the mounting substrate inherits the effects of the first, second, and third embodiments of the present invention as they are, and the conductor pattern 18 and the metal support 11 are connected by the projection 24. Therefore, the number of steps can be reduced as compared with the third embodiment of the present invention, which is effective in terms of cost and yield.
[0157]
Next, a fifth embodiment of the method for manufacturing a semiconductor device mounting substrate and a semiconductor package according to the present invention will be described. FIGS. 15A to 15D are partial cross-sectional views illustrating a method of manufacturing a mounting board according to a fifth embodiment of the present invention in the order of steps. The present embodiment is for manufacturing a mounting substrate according to the third embodiment (FIG. 5) of the present invention. Note that cleaning and heat treatment are appropriately performed between each step. The construction other than the provision of the dielectric layer 20 and the conductor layer 21 on at least one or more of the first electrode patterns 13 to form the capacitor 22 is similar to that of the first embodiment of the present invention. Same as the method.
[0158]
Although FIG. 15 uses the first embodiment of the present invention, FIGS. 10 (b) and (c), FIGS. 11 (b) and 11 (b) in the second embodiment of the present invention. 12 (b), (c) and 13 (c) of the fourth embodiment and FIG. 14 (b) of the fourth embodiment may be substituted for FIG. 15 (b).
[0159]
First, as shown in FIG. 15A, one or a combination of plating, etching, conductive paste, and machining is applied to the surface of a metal support 11 having a thickness of 0.1 to 1.5 mm. As a result, a projection 24 is formed. When the protrusions 24 are removed by etching, it is possible to form any one metal of gold, silver, platinum, and palladium on the uppermost layer of the protrusions 24 for an etching barrier to the first electrode pattern 13. .
[0160]
In the present embodiment, the metal support 11 uses a copper alloy plate (Kobe Steel: KFC series), and the projections 24 are formed of nickel by a plating method. The projections 24 are formed by laminating a plating resist with a thickness of 30 μm on the metal support 11 and forming an opening pattern of the plating resist at a predetermined location of the projections 24 by exposure, development, or laser as a photolithography technique. Then, 25 μm of electrolytic nickel plating was deposited.
[0161]
Next, as shown in FIG. 15B, the insulator film 12 and the first electrode pattern 13 are formed. When the resin for the insulator film 12 is in a liquid state, the insulator film 12 is formed by a spin coating method, a die coating method, a curtain coating method, a printing method, or the like. In the case of a dry film or a copper foil with resin, after laminating by a laminating method or the like, a treatment such as drying is performed to harden. At this time, since the vertices of the projections 24 need to appear on the surface of the insulator film 12, in the case of a liquid resin, if photosensitive, patterning is performed by photolithography. If is insufficient, it is adjusted by polishing.
[0162]
In the case of a dry film or a copper foil with a resin, a cushion may be provided on the carrier side of the film so that the apex of the projection 24 protrudes during lamination. In the case of a dry film, it may be prepared by polishing after lamination.
[0163]
After the formation of the insulator film 12, the first electrode pattern 13 is formed by a subtractive method, a semi-additive method, a full-additive method, or the like. In particular, when the resin of the copper foil with resin is used as the insulating film 12, the copper foil used as a carrier can be patterned by a subtractive method.
[0164]
When the thickness of the copper foil is as thin as 2 μm or less, patterning by a semi-additive method using this copper foil as a power supply layer is also possible. In the present embodiment, the insulating film 12 is formed using a polyimide resin (Nitto Denko; AP-6832C), and the first electrode pattern 13 is formed using a semi-additive method in which a power supply layer is provided by a sputtering method. .
[0165]
Next, as shown in FIG. 15C, a dielectric layer 20 and a conductor layer 21 are formed on at least one or more first electrode patterns 13. Although not particularly shown, the first electrode pattern 13 forming the capacitor also has a portion electrically connected as a pad for use as a decoupling capacitor.
[0166]
The dielectric layer 20 is formed on the first electrode pattern 13 by a sputtering method, an evaporation method, a CVD method, an anodic oxidation method, or the like. The material forming the capacitor 22 is titanium oxide, tantalum oxide, Al₂O₃, SiO₂, Nb₂O₅, BST (Ba_xSr_1-xTiO₃), PZT (PbZr_xTi_1-xO₃), PLZT (Pb_1-yLa_yZr_xTi_1-xO₃) Or SrBi₂Ta₂O₉It is preferable to use a perovskite-based material such as However, for all of the above compounds, 0 ≦ x ≦ 1 and 0 <y <1.
[0167]
In addition, the dielectric layer 20 may be made of an organic resin or the like that can realize a desired dielectric constant. Further, the conductor layer 21 is formed on the dielectric layer 20 by a sputtering method, a CVD method, a subtractive method, a semi-additive method, a full-additive method, or the like. In this embodiment, 20 nm of BST is deposited on the required electrode pattern 13 by a sputtering method using a metal mask, and 80 nm of platinum is deposited thereon by sputtering as a conductor layer 21.
[0168]
Next, as shown in FIG. 15D, the insulating layer 14 and the wiring layer 15 are formed. The method of forming the insulating layer 14 is as follows: if the insulating resin forming the insulating layer 14 is liquid, the insulating resin is laminated by a spin coating method, a die coating method, a curtain coating method, a printing method, or the like, and the insulating resin is a dry film. Then, after laminating the insulating resin by a laminating method or the like, the insulating resin is solidified by performing a treatment such as drying.
[0169]
Then, if the insulating resin is photosensitive, by a photolithography process or the like, or if the insulating resin is non-photosensitive, by a laser processing method or the like, the insulating resin is patterned to form a via hole, and cured. The insulating resin is cured to form the insulating layer 14.
[0170]
Next, a wiring pattern is formed by a subtractive method, a semi-additive method, a full-additive method, or the like, and the wiring layer 15 is formed. In the present embodiment, an aramid nonwoven fabric impregnated epoxy resin (manufactured by Shin Kobe Electric; EA-541) is used for the insulating layer 13, and the wiring layer 14 uses a semi-additive method using 2 μm-thick electroless copper plating as a power supply layer. . The state formed in this step is the same as that in FIG. 9C, and the subsequent steps are the steps after FIG. 9D.
[0171]
This mounting board is the same as the mounting board according to the third embodiment of the present invention, and according to the above-described manufacturing method, this mounting board can be manufactured efficiently. By forming such a capacitor, transmission noise can be reduced, and a mounting substrate optimal for high-speed operation can be obtained.
[0172]
Next, a sixth embodiment of the method for manufacturing a semiconductor device mounting substrate and a semiconductor package according to the present invention will be described. 16A to 16F are partial cross-sectional views illustrating a method of manufacturing a mounting board according to a sixth embodiment of the present invention in the order of steps. Note that cleaning and heat treatment are appropriately performed between each step. The configuration other than that the portion to be removed from the metal support 11 is previously formed as the concave portion 29 is the same as the manufacturing method of the mounting substrate according to the first embodiment of the present invention. Although the method of manufacturing the mounting substrate of FIG. 16 is the same as that of the first embodiment of the present invention, the second embodiment, the third embodiment, the fourth embodiment, and the fifth embodiment The mounting substrate may be formed according to the embodiment.
[0173]
First, as shown in FIG. 16A, a portion to be etched and removed is formed as a concave portion 29 on the back surface of the metal support 11 having a thickness of 0.1 to 1.5 mm. As a forming method, etching, machining, or a combined method is used. Alternatively, the metal support 11 may be formed by bonding a frame-shaped metal plate to a flat metal plate.
[0174]
After that, the projections 24 are formed on the surface of the metal support 11 by one or a combination of plating, etching, conductive paste, and machining. When the protrusions 24 are removed by etching, it is possible to form any one metal of gold, silver, platinum, and palladium on the uppermost layer of the protrusions 24 for an etching barrier to the first electrode pattern 13. .
[0175]
In the present embodiment, the metal support 11 uses a copper alloy plate (Kobe Steel: KFC series), and the projections 24 are formed of nickel by a plating method. The projections 24 are formed by laminating a plating resist with a thickness of 30 μm on the metal support 11 and forming an opening pattern of the plating resist at a predetermined location of the projections 24 by exposure, development, or laser as a photolithography technique. Then, 25 μm of electrolytic nickel plating was deposited.
[0176]
Next, as shown in FIG. 16B, an insulator film 12 and a first electrode pattern 13 are formed. When the resin for the insulator film 12 is in a liquid state, the insulator film 12 is formed by a spin coating method, a die coating method, a curtain coating method, a printing method, or the like. In the case of a dry film or a copper foil with resin, after laminating by a laminating method or the like, a treatment such as drying is performed to harden. At this time, since the vertices of the projections 24 need to appear on the surface of the insulator film 12, in the case of a liquid resin, if photosensitive, patterning is performed by photolithography. If is insufficient, it is adjusted by polishing.
[0177]
In the case of a dry film or a copper foil with a resin, a cushion may be provided on the carrier side of the film so that the apex of the projection 24 protrudes during lamination. In the case of a dry film, it may be prepared by polishing after lamination.
[0178]
After the formation of the insulator film 12, the first electrode pattern 13 is formed by a subtractive method, a semi-additive method, a full-additive method, or the like. In particular, when the resin of the copper foil with resin is used as the insulating film 12, the copper foil used as a carrier can be patterned by a subtractive method.
[0179]
When the thickness of the copper foil is as thin as 2 μm or less, patterning by a semi-additive method using this copper foil as a power supply layer is also possible. In the present embodiment, the first electrode pattern 13 is formed by patterning the insulator film 12 using a copper foil with resin (Sumitomo Bakelite; APL-4501; copper foil thickness, 18 μm) and the copper foil by a subtractive method. Formed.
[0180]
Next, as shown in FIG. 16C, the insulating layer 14 and the wiring layer 15 are formed. The method of forming the insulating layer 14 is as follows: if the insulating resin forming the insulating layer 14 is liquid, the insulating resin is laminated by a spin coating method, a die coating method, a curtain coating method, a printing method, or the like, and the insulating resin is a dry film. Then, after laminating the insulating resin by a laminating method or the like, the insulating resin is solidified by performing a treatment such as drying.
[0181]
Then, if the insulating resin is photosensitive, by a photolithography process or the like, or if the insulating resin is non-photosensitive, by a laser processing method or the like, the insulating resin is patterned to form a via hole, and cured. The insulating resin is cured to form the insulating layer 14. Next, a wiring pattern is formed by a subtractive method, a semi-additive method, a full-additive method, or the like, and the wiring layer 15 is formed.
[0182]
Next, as shown in FIG. 16D, a process of forming the insulating layer 13 and a process of forming the wiring layer 14 by a subtractive method, a semi-additive method, a full-additive method or the like are repeated to form the wiring structure film 16 and the surface layer. The second electrode pattern 17 is formed. In the present embodiment, an aramid nonwoven fabric impregnated epoxy resin (manufactured by Shin Kobe Electric; EA-541) is used for the insulating layer 13, and the wiring layer 14 uses a semi-additive method using 2 μm-thick electroless copper plating as a power supply layer. .
[0183]
Next, as shown in FIG. 16E, the metal support 11 is selectively removed by etching. As a removing method, an etching resist having an opening at an area to be etched is formed. If the etching resist is liquid, the etching resist is laminated by a spin coating method, a die coating method, a curtain coating method, a printing method, or the like, and if the etching resist is a dry film, the etching resist is laminated by a lamination method or the like, The etching resist is solidified by performing processing such as drying, and the etching resist is patterned by a photolithography process or the like if the etching resist is photosensitive, or is patterned by a laser processing method or the like if the etching resist is non-photosensitive.
[0184]
After that, using the etching resist as a mask, the metal support 11 is etched until the insulator film 11 and the projections 24 are exposed. Further, since the recess 29 is formed, it is possible to perform etching without using an etching resist. In the present embodiment, the copper alloy plate was selectively removed without using an etching resist by using an alkali copper etching solution containing ammonia as a main component (Meltex; A process).
[0185]
Next, as shown in FIG. 16F, the protrusions 24 are selectively removed by etching or laser. A laser may be used to adjust the shape of the opening after the etching. After removing the projections 24, the exposed surface of the first electrode pattern 13 is normalized to obtain a mounting substrate. In the present embodiment, the nickel forming the projections 24 is removed using an etching solution in which sulfuric acid: hydrogen peroxide solution: pure water = 1: 1: 10.
[0186]
According to the above-described manufacturing method, the mounting substrate can be manufactured efficiently. Further, according to the manufacturing method according to the present embodiment, the first embodiment, the second embodiment, the third embodiment, the fourth embodiment, and the fifth embodiment of the present invention. Since each of the forms can be accommodated, the respective advantages can be utilized. Further, since the place where the metal support 11 is to be etched is the concave portion 29, the amount of etching can be reduced, and the effect of improving the etching accuracy and the yield can be obtained.
[0187]
Next, a seventh embodiment of the method for manufacturing a semiconductor device mounting substrate and a semiconductor package according to the present invention will be described. 17A to 17E are partial cross-sectional views illustrating a method of manufacturing a mounting board according to the seventh embodiment of the present invention in the order of steps. Note that cleaning and heat treatment are appropriately performed between each step. The configuration is the same as the manufacturing method of the mounting substrate according to the first embodiment of the present invention except that the mounting substrate is formed on both surfaces of the metal supporting member 11 and then the metal supporting member 11 is divided into two parts in the horizontal direction. It is. Although the method of manufacturing the mounting substrate of FIG. 17 is the same as that of the first embodiment of the present invention, the second embodiment, the third embodiment, the fourth embodiment, and the fifth embodiment The mounting substrate may be formed according to the embodiment.
[0188]
First, as shown in FIG. 17A, a metal support 11 having a thickness of 0.2 to 3.0 mm and an additional thickness for a margin is prepared. In this case, the thickness of the metal support 11 after dividing in the horizontal direction is desirably 0.1 to 1.5 mm.
[0189]
Next, as shown in FIG. 17B, the projections 24 are formed on both surfaces of the metal support 11 by one or a combination of plating, etching, conductive paste, and machining. When the protrusions 24 are removed by etching, it is possible to form any one metal of gold, silver, platinum, and palladium on the uppermost layer of the protrusions 24 for an etching barrier to the first electrode pattern 13. .
[0190]
In the present embodiment, the metal support 11 uses a copper alloy plate (Kobe Steel: KFC series), and the projections 24 are formed of nickel by a plating method. The projections 24 are formed by laminating a plating resist with a thickness of 30 μm on the metal support 11 and forming an opening pattern of the plating resist at a predetermined location of the projections 24 by exposure, development, or laser as a photolithography technique. Then, 25 μm of electrolytic nickel plating was deposited.
[0191]
Next, as shown in FIG. 17C, the insulator film 12 and the first electrode pattern 13 are formed. When the resin for the insulator film 12 is in a liquid state, the insulator film 12 is formed by a spin coating method, a die coating method, a curtain coating method, a printing method, or the like. In the case of a dry film or a copper foil with resin, after laminating by a laminating method or the like, a treatment such as drying is performed to harden. At this time, since the vertices of the projections 24 need to appear on the surface of the insulator film 12, in the case of a liquid resin, if photosensitive, patterning is performed by photolithography. If is insufficient, it is adjusted by polishing.
[0192]
In the case of a dry film or a copper foil with a resin, a cushion may be provided on the carrier side of the film so that the apex of the projection 24 protrudes during lamination. In the case of a dry film, it may be prepared by polishing after lamination.
[0193]
After the formation of the insulator film 12, the first electrode pattern 13 is formed by a subtractive method, a semi-additive method, a full-additive method, or the like. In particular, when the resin of the copper foil with resin is used as the insulating film 12, the copper foil used as a carrier can be patterned by a subtractive method. When the thickness of the copper foil is as thin as 2 μm or less, patterning by a semi-additive method using this copper foil as a power supply layer is also possible.
[0194]
In the present embodiment, the first electrode pattern 13 is formed by patterning the insulator film 12 using a copper foil with resin (Sumitomo Bakelite; APL-4501; copper foil thickness, 18 μm) and the copper foil by a subtractive method. Formed.
[0195]
Next, as shown in FIG. 17D, the insulating layer 14 and the wiring layer 15 are formed. The method of forming the insulating layer 14 is as follows: if the insulating resin forming the insulating layer 14 is liquid, the insulating resin is laminated by a spin coating method, a die coating method, a curtain coating method, a printing method, or the like, and the insulating resin is a dry film. Then, after laminating the insulating resin by a laminating method or the like, the insulating resin is solidified by performing a treatment such as drying.
[0196]
Then, if the insulating resin is photosensitive, by a photolithography process or the like, or if the insulating resin is non-photosensitive, by a laser processing method or the like, the insulating resin is patterned to form a via hole, and cured. The insulating resin is cured to form the insulating layer 14.
[0197]
Next, a wiring pattern is formed by a subtractive method, a semi-additive method, a full-additive method, or the like, and the wiring layer 15 is formed. Further, the step of forming the insulating layer 13 and the step of forming the wiring layer 14 by a subtractive method, a semi-additive method, a full-additive method, or the like are repeated to form a second electrode pattern 17 on the wiring structure film 16 and the surface layer. In the present embodiment, an aramid nonwoven fabric impregnated epoxy resin (manufactured by Shin Kobe Electric; EA-541) is used for the insulating layer 13, and the wiring layer 14 uses a semi-additive method using 2 μm-thick electroless copper plating as a power supply layer. .
[0198]
Next, as shown in FIG. 17E, the metal support 11 is divided into two parts at the center in the horizontal direction to form a second surface. As a dividing method, cutting is performed with a slicer, a water cutter, or the like. The state formed in this step is the same as that in FIG. 9D, and the subsequent steps are the steps after FIG. 9E.
[0199]
According to the above-described manufacturing method, the mounting substrate can be manufactured efficiently. Further, according to the manufacturing method according to the present embodiment, the first embodiment, the second embodiment, the third embodiment, the fourth embodiment, and the fifth embodiment of the present invention. Since each of the forms can be accommodated, the respective advantages can be utilized. Furthermore, since both surfaces of the metal support 11 are used, the number of productions is doubled, which has the effect of improving productivity.
[0200]
Next, an eighth embodiment of a method of manufacturing a semiconductor device mounting substrate and a semiconductor package according to the present invention will be described. FIGS. 18A to 18E are partial cross-sectional views illustrating a method of manufacturing a mounting substrate according to an eighth embodiment of the present invention in the order of steps. Note that cleaning and heat treatment are appropriately performed between each step. The configuration is the same as that of the method for manufacturing a mounting substrate according to the first embodiment of the present invention, except that the mounting substrate is formed on both surfaces by bonding two metal supports 11 and then dividing the metal supporting body 11. It is. Although the method of manufacturing the mounting board of FIG. 18 is the same as that of the first embodiment of the present invention, the second embodiment, the third embodiment, the fourth embodiment, and the fifth embodiment The mounting substrate may be formed according to the sixth embodiment. In particular, in the case of the shape in which the concave portion 29 is provided in the metal support 11, both sides can be formed only by the lamination of the present invention.
[0201]
First, as shown in FIG. 18A, the metal support 11a and the metal support 11b are laminated to a thickness of 0.1 to 1.5 mm. In addition, it is also possible to use the metal support 11 in which the concave portion 29 is formed to be bonded. The lamination is performed on the entire surface or at the end by using a bonding agent, welding, or the like, by forming fine irregularities on the surface where the metal support 11a and the metal support 11b are bonded. Considering the division in FIG. 18 (e), it is more appropriate to perform the bonding at the end.
[0202]
Next, as shown in FIG. 18B, the projections 24 are formed on both surfaces of the metal support 11 by one or a combination of plating, etching, conductive paste, and machining. When the protrusions 24 are removed by etching, it is possible to form any one metal of gold, silver, platinum, and palladium on the uppermost layer of the protrusions 24 for an etching barrier to the first electrode pattern 13. . In the present embodiment, the metal support 11 uses a copper alloy plate (Kobe Steel: KFC series), and the projections 24 are formed of nickel by a plating method. The projections 24 are formed by laminating a plating resist with a thickness of 30 μm on the metal support 11 and forming an opening pattern of the plating resist at a predetermined location of the projections 24 by exposure, development, or laser as a photolithography technique. Then, 25 μm of electrolytic nickel plating was deposited.
[0203]
Next, as shown in FIG. 18C, the insulator film 12 and the first electrode pattern 13 are formed. When the resin for the insulator film 12 is in a liquid state, the insulator film 12 is formed by a spin coating method, a die coating method, a curtain coating method, a printing method, or the like. In the case of a dry film or a copper foil with resin, after laminating by a laminating method or the like, a treatment such as drying is performed to harden. At this time, since the vertices of the projections 24 need to appear on the surface of the insulator film 12, in the case of a liquid resin, if photosensitive, patterning is performed by photolithography. If is insufficient, it is adjusted by polishing.
[0204]
In the case of a dry film or a copper foil with a resin, a cushion may be provided on the carrier side of the film so that the apex of the projection 24 protrudes during lamination. In the case of a dry film, it may be prepared by polishing after lamination.
[0205]
After the formation of the insulator film 12, the first electrode pattern 13 is formed by a subtractive method, a semi-additive method, a full-additive method, or the like. In particular, when the resin of the copper foil with resin is used as the insulating film 12, the copper foil used as a carrier can be patterned by a subtractive method.
[0206]
When the thickness of the copper foil is as thin as 2 μm or less, patterning by a semi-additive method using this copper foil as a power supply layer is also possible. In the present embodiment, the first electrode pattern 13 is formed by patterning the insulator film 12 using a copper foil with resin (Sumitomo Bakelite; APL-4501; copper foil thickness, 18 μm) and the copper foil by a subtractive method. Formed.
[0207]
Next, as shown in FIG. 18D, the insulating layer 14 and the wiring layer 15 are formed. The method of forming the insulating layer 14 is as follows: if the insulating resin forming the insulating layer 14 is liquid, the insulating resin is laminated by a spin coating method, a die coating method, a curtain coating method, a printing method, or the like, and the insulating resin is a dry film. Then, after laminating the insulating resin by a laminating method or the like, the insulating resin is solidified by performing a treatment such as drying.
[0208]
Then, if the insulating resin is photosensitive, by a photolithography process or the like, or if the insulating resin is non-photosensitive, by a laser processing method or the like, the insulating resin is patterned to form a via hole, and cured. The insulating resin is cured to form the insulating layer 14.
[0209]
Next, a wiring pattern is formed by a subtractive method, a semi-additive method, a full-additive method, or the like, and the wiring layer 15 is formed. Further, the step of forming the insulating layer 13 and the step of forming the wiring layer 14 by a subtractive method, a semi-additive method, a full-additive method, or the like are repeated to form a second electrode pattern 17 on the wiring structure film 16 and the surface layer.
[0210]
In the present embodiment, an aramid nonwoven fabric impregnated epoxy resin (manufactured by Shin Kobe Electric; EA-541) is used for the insulating layer 13, and the wiring layer 14 uses a semi-additive method using 2 μm-thick electroless copper plating as a power supply layer. .
[0211]
Next, as shown in FIG. 18E, the metal support 11 on which the metal support 11 is entirely adhered is cut at its center by a slicer, a water cutter, or the like to be divided into a metal support 11a and a metal support 11b. . The metal support 11 having the bonded end portions is divided into a metal support 11a and a metal support 11b by cutting the bonded end.
[0212]
The state formed in this step is the same as that in FIG. 9D, and the subsequent steps are the steps after FIG. 9E.
[0213]
According to the above-described manufacturing method, the mounting substrate can be manufactured efficiently. Further, according to the manufacturing method according to the present embodiment, the first embodiment, the second embodiment, the third embodiment, the fourth embodiment, and the fifth embodiment of the present invention. Since it is possible to cope with each of the embodiments and the sixth embodiment, the respective advantages can be utilized. Furthermore, since the metal support 11 can be bonded after being processed, the degree of freedom in processing the metal support 11 is high, and the number of productions is doubled because both surfaces are used to improve productivity. Has the effect of causing
[0214]
Next, a ninth embodiment of a method for manufacturing a semiconductor mounting substrate and a semiconductor package according to the present invention will be described. FIGS. 19A to 19D are partial cross-sectional views illustrating a method of manufacturing a semiconductor package according to a ninth embodiment of the present invention in the order of steps. The present embodiment is for manufacturing a mounting substrate according to a fifth embodiment (FIGS. 8A, 8B, and 8C) of the present invention. Note that cleaning and heat treatment are appropriately performed between each step.
[0215]
In FIG. 19, connection is performed by flip chip using solder balls as the metal bumps 27. As the metal bump 27, a metal made of gold, copper, tin, solder, or the like is preferably used. As the connection between the pad 26 and the second electrode pattern 17, wire bonding or tape bonding can be used.
[0216]
First, as shown in FIG. 19A, the first embodiment, the second embodiment, the third embodiment, the fourth embodiment, the fifth embodiment, According to the sixth embodiment, the seventh embodiment, and the eighth embodiment, the wiring structure film 16 and the second electrode pattern 17 are formed (for example, as shown in FIG. 9D). Prepare a mounting board.
[0217]
Next, as shown in FIG. 19B, the second electrode pattern 17 is connected to the pad 26 of the semiconductor device 25 by a metal bump 27. If necessary, an underfill resin 28 may be filled. In the present embodiment, connection is made using solder balls, and the underfill resin 28 is filled.
[0218]
Next, as shown in FIG. 19C, the first electrode pattern 13 is exposed by selectively removing the metal support 11 and the protrusions 24. The removal of the metal support 11 is performed by etching, and the removal of the protrusions 24 is performed by etching, laser, or a combined method. At this time, it is desirable to protect the mounted semiconductor device 25 with a resist material so as not to be damaged. If the strength of the semiconductor package on which the semiconductor device 25 is mounted is sufficient, the metal support 11 may be entirely removed as shown in FIG.
[0219]
Further, from the state of FIG. 19B on which the semiconductor device 25 is mounted, a step of forming a semiconductor package sealed with the mold resin 30 as shown in FIG.
[0220]
First, as shown in FIG. 20A, the first embodiment, the second embodiment, the third embodiment, the fourth embodiment, the fifth embodiment, According to the sixth embodiment, the seventh embodiment, and the eighth embodiment, the wiring structure film 16 and the second electrode pattern 17 are formed (for example, as shown in FIG. 9D). A mounting substrate is prepared, the semiconductor device 25 is flip-chip connected, and the underfill resin 28 is filled.
[0221]
Next, as shown in FIG. 20B, sealing is performed with a mold resin 30. Thereafter, as shown in FIG. 20C, the first electrode pattern 13 is exposed by selectively removing the metal support 11 and the protrusions 24. The removal of the metal support 11 is performed by etching, and the removal of the protrusions 24 is performed by etching, laser, or a combined method.
[0222]
At this time, it is desirable to protect the mounted semiconductor device 25 with a resist material so as not to be damaged. If the strength of the semiconductor package on which the semiconductor device 25 is mounted is sufficient, the metal support 11 may be entirely removed as shown in FIG.
[0223]
Further, from the state of FIG. 19B on which the semiconductor device 25 is mounted, a step of forming a semiconductor package to which the heat spreader 32 is attached using the spacer 31 as shown in FIG.
[0224]
First, as shown in FIG. 21A, the first embodiment, the second embodiment, the third embodiment, the fourth embodiment, the fifth embodiment, According to the sixth embodiment, the seventh embodiment, and the eighth embodiment, the wiring structure film 16 and the second electrode pattern 17 are formed (for example, as shown in FIG. 9D). A mounting substrate is prepared, the semiconductor device 25 is flip-chip connected, and the underfill resin 28 is filled.
[0225]
Next, as shown in FIG. 21B, the spacer 31 is attached. Usually, the spacer 31 is a reinforcing frame for attaching the heat spreader 32 and the heat sink on the semiconductor device 25. As the material, stainless steel or copper is used, but if it has the strength required for reinforcement, it may be formed of resin.
[0226]
Next, as shown in FIG. 21C, a heat spreader 32 for attaching a heat sink is attached. This attachment is performed by using an adhesive made of a heat conductive metal paste between the semiconductor device 25 and the heat spreader 32 and using an insulating adhesive between the spacer 31 and the heat spreader 32.
[0227]
After the attachment, the first electrode pattern 13 is exposed by selectively removing the metal support 11 and the protrusion 24. The removal of the metal support 11 is performed by etching, and the removal of the protrusions 24 is performed by etching, laser, or a combined method. At this time, it is desirable to protect the mounted heat spreader 32, the spacer 31, and the semiconductor device 25 with a resist material so as not to be damaged. Further, if the strength of the semiconductor package on which the semiconductor device 25 is mounted is sufficient, the metal support 11 may be entirely removed as shown in FIG.
[0228]
This mounting board is the same as the semiconductor package according to the fifth embodiment of the present invention, and according to the above-described manufacturing method, this mounting board can be manufactured efficiently. By using the present invention, deformation such as warpage or undulation of the mounting substrate in the processes of mounting the semiconductor device 25, filling the underfill 28, filling the mold resin 30, the spacer 31, and the heat spreader 32 is suppressed by the metal support 11. Mounting reliability and assembly yield are improved.
[0229]
Next, a tenth embodiment of a method for manufacturing a semiconductor device mounting substrate and a semiconductor package according to the present invention will be described. FIGS. 22A to 22D are partial cross-sectional views illustrating a method of manufacturing a semiconductor package according to the tenth embodiment of the present invention in the order of steps. The present embodiment is for manufacturing the mounting substrate according to the fifth embodiment (FIGS. 8B, 8C, and 8D) of the present invention. Note that cleaning and heat treatment are appropriately performed between each step.
[0230]
In FIG. 22, connection is made by flip chip using solder balls as metal bumps 27. As the metal bump 27, a metal made of gold, copper, tin, solder, or the like is preferably used. As the connection between the pad 26 and the second electrode pattern 17, wire bonding or tape bonding can be used.
[0231]
First, as shown in FIG. 22A, the first embodiment, the second embodiment, the third embodiment, the fourth embodiment, the fifth embodiment, A mounting board formed according to the sixth embodiment, the seventh embodiment, and the eighth embodiment is prepared.
[0232]
Next, as shown in FIG. 22B, the second electrode pattern 17 is connected to the pad 26 of the semiconductor device 25 by a metal bump 27. If necessary, an underfill resin 28 may be filled. In the present embodiment, connection is made using solder balls, and the underfill resin 28 is filled.
[0233]
Here, when the mounting substrate in FIG. 22A has a shape in which the metal support 11 is removed, a semiconductor package shown in FIG. 22C is obtained. If the strength of the semiconductor package obtained in FIG. 22B is sufficient, all the metal supports 11 provided as reinforcement may be removed, and the configuration shown in FIG. 22C may be adopted.
[0234]
Further, as shown in FIG. 22 (d), the semiconductor device 25 mounting side is sealed with a mold resin 30, or as shown in FIG. 22 (e), a heat spreader 32 is attached using a spacer 31. It may be a package. FIGS. 22D and 22E both show the shape in which the metal support 11 is left. However, the metal support 11 may be removed if the strength is sufficient as a semiconductor package.
[0235]
Further, as shown in FIG. 23, a process as a semiconductor package using the metal support 11 as a spacer 31 as a reinforcing frame can be taken.
[0236]
First, as shown in FIG. 23A, the first embodiment, the second embodiment, the third embodiment, the fourth embodiment, the fifth embodiment, A mounting board formed according to the sixth embodiment, the seventh embodiment, and the eighth embodiment is prepared.
[0237]
Next, as shown in FIG. 23B, the first electrode pattern 13 and the pad 26 of the semiconductor device 25 are connected by a metal bump 27. If necessary, an underfill resin 28 may be filled. In the present embodiment, connection is made using solder balls, and the underfill resin 28 is filled.
[0238]
Next, as shown in FIG. 23C, the heat spreader 32 is attached. In order to achieve this configuration, it is necessary that the thickness of the metal support 11 be substantially equal to the thickness of the mounted semiconductor device 25 from above the mounting substrate. In addition, there is also a form in which the heat spreader 32 is sealed without using the mold resin 30 (FIG. 23D). In the sealing with the molding and the resin 30, the thickness of the metal support 11 and the mounting thickness of the semiconductor device 25 do not necessarily have to match.
[0239]
This mounting board is the same as the semiconductor package according to the fifth embodiment of the present invention, and according to the above-described manufacturing method, this mounting board can be manufactured efficiently. By using the present invention, the semiconductor device 25 can be mounted after the quality of the mounting substrate is determined. Further, by using the metal support 11 as the spacer 31, the number of steps for assembling the semiconductor package can be reduced.
[0240]
Next, a method for inspecting a semiconductor device mounting substrate and a semiconductor package mounting substrate according to the present invention will be described. FIGS. 24A to 24C are partial cross-sectional views illustrating an example of a method of inspecting a mounting board according to the tenth embodiment of the present invention.
[0241]
FIG. 24A is performed in the form of the mounting substrate before the metal support 11 and the protrusion 24 are removed. In FIG. 24A, the first embodiment of the present invention (the embodiment of FIG. 9D) is used, but the second, third, and fourth embodiments of the present invention are used. The mounting substrate formed by the fifth, sixth, seventh, and eighth embodiments may be used.
[0242]
By this inspection, an open inspection (conduction failure) of the circuit on the mounting board can be performed. In the short circuit inspection of the circuit, a pattern search is performed by an image recognition measurement device or the like to check each layer. Alternatively, after the metal support 11 and the protrusion 24 are removed, a short circuit inspection of the circuit of the mounting substrate may be performed. By using this method, the semiconductor device 25 can be mounted after the quality of the mounting substrate used in the ninth embodiment of the present invention is determined.
[0243]
FIG. 24B shows a state in which the metal support 11 is selectively removed and the protrusions 24 are not removed, and both the open and short-circuit tests of the circuit of the mounting board are performed using the second electrode pattern 17 and the protrusions 24. In FIG. 24B, the first embodiment of the present invention (the embodiment of FIG. 9E) is used, but the second embodiment, the third embodiment, and the fourth embodiment are used. The mounting substrate formed by the fifth, sixth, seventh, and eighth embodiments may be used. By using the present invention, it is possible to perform pass / fail selection without damaging the first electrode pattern 13 by inspection, and realize connection stability in the mounting method of FIG. 23 according to the tenth embodiment of the present invention. it can.
[0244]
FIG. 24C shows an opening formed so as not to touch the projection 24 for inspecting the metal support 11, and the open and short circuit inspection of the circuit of the mounting board by the projection 24 in the opening and the second electrode pattern 17. I do. In FIG. 24B, the first embodiment of the present invention (forming the opening from the form of FIG. 9D) is used, but the second embodiment, the third embodiment, The mounting substrate formed according to the fourth, fifth, sixth, seventh, and eighth embodiments may be used. By using this method, the quality of the mounting substrate used in the ninth embodiment of the present invention can be electrically and completely determined, and almost all of the metal support 11 remains. The mounting reliability shown in the embodiment can be maintained.
[0245]
【The invention's effect】
As described above, according to the present invention, it is possible to realize a high density and fine wiring of a mounting substrate corresponding to an increase in the number of terminals and a narrow pitch of a semiconductor device, and to cope with a miniaturization and a high density of a system. In addition, it is possible to realize a mounting substrate in which external electrodes are also narrowed in pitch.
[0246]
Further, according to the present invention, a mounting substrate having excellent mounting reliability can be provided, and a semiconductor package having high performance and excellent reliability can be realized.
[Brief description of the drawings]
1A and 1B are diagrams showing a first embodiment of a semiconductor device mounting substrate and a semiconductor package according to the present invention, wherein FIG. 1A is a schematic cross-sectional view, and FIG. 1B is a schematic bottom view from the side of a metal support 11; It is.
FIG. 2 is a schematic sectional view showing a modified example of the first embodiment of the semiconductor device mounting board and the semiconductor package of the present invention.
FIG. 3 is a schematic sectional view showing a second embodiment of the semiconductor device mounting board and the semiconductor package of the present invention.
FIG. 4 is a schematic cross-sectional view showing a modification of the second embodiment of the semiconductor device mounting board and the semiconductor package of the present invention.
FIG. 5 is a schematic sectional view showing a third embodiment of the semiconductor device mounting board and the semiconductor package of the present invention.
FIG. 6 is a schematic sectional view showing a semiconductor device mounting board and a semiconductor package according to a fourth embodiment of the present invention.
FIG. 7 is a schematic sectional view showing a modification of the fourth embodiment of the semiconductor device mounting board and the semiconductor package of the present invention.
FIG. 8 is a schematic sectional view showing a fifth embodiment of the semiconductor device mounting board and the semiconductor package of the present invention.
FIG. 9 is a partial cross-sectional view showing a first embodiment of a method for manufacturing a semiconductor device mounting substrate and a semiconductor package according to the present invention.
FIG. 10 is a partial cross-sectional view showing a second embodiment of a method for manufacturing a semiconductor device mounting substrate and a semiconductor package according to the present invention.
FIG. 11 is a partial cross-sectional view showing a modification of the second embodiment of the method for manufacturing a semiconductor device mounting board and a semiconductor package of the present invention.
FIG. 12 is a partial cross-sectional view showing a third embodiment of a method for manufacturing a semiconductor device mounting substrate and a semiconductor package according to the present invention;
FIG. 13 is a partial cross-sectional view showing a modification of the third embodiment of the method for manufacturing a semiconductor device mounting board and a semiconductor package of the present invention.
FIG. 14 is a partial cross-sectional view illustrating a fourth embodiment of a method for manufacturing a semiconductor device mounting substrate and a semiconductor package according to the present invention.
FIG. 15 is a partial cross-sectional view showing a fifth embodiment of the method for manufacturing a semiconductor device mounting board and a semiconductor package according to the present invention;
FIG. 16 is a partial cross-sectional view showing a sixth embodiment of a method for manufacturing a semiconductor device mounting substrate and a semiconductor package according to the present invention.
FIG. 17 is a partial cross-sectional view showing a seventh embodiment of a method for manufacturing a semiconductor device mounting substrate and a semiconductor package according to the present invention;
FIG. 18 is a partial sectional view showing an eighth embodiment of a method for manufacturing a semiconductor device mounting substrate and a semiconductor package according to the present invention.
FIG. 19 is a partial sectional view showing a ninth embodiment of a method for manufacturing a semiconductor device mounting board and a semiconductor package according to the present invention;
FIG. 20 is a partial cross-sectional view showing a modification of the ninth embodiment of the method for manufacturing a semiconductor device mounting board and a semiconductor package of the present invention.
FIG. 21 is a partial cross-sectional view showing a modification of the ninth embodiment of the method for manufacturing a semiconductor device mounting board and a semiconductor package of the present invention.
FIG. 22 is a partial sectional view showing a tenth embodiment of a method for manufacturing a semiconductor device mounting substrate and a semiconductor package according to the present invention.
FIG. 23 is a partial cross-sectional view showing a modification of the tenth embodiment of the method for manufacturing a semiconductor device mounting board and a semiconductor package of the present invention.
FIG. 24 is a partial cross-sectional view illustrating a method for inspecting a semiconductor mounting substrate according to the present invention.
[Explanation of symbols]
11 Metal support
11a Metal support
11b Metal support
12 Insulator film
13 First electrode pattern
14 Insulating layer
15 Wiring layer
16 Wiring structure film
17 Second electrode pattern
18 Conductor pattern
19 Via
20 Dielectric layer
21 Conductor layer
22 capacitors
23 Solder resist
24 protrusion
25 Semiconductor devices
26 pads
27 Metal bump
28 Underfill resin
29 recess
30 Mold resin
31 Spacer
32 heat spreader
33 Inspection needle

Claims (20)

Forming a plurality of protrusions at desired positions on the surface of the metal support,
Forming an insulator film in a region of the metal support surface other than the protrusion formation region,
Forming a first electrode pattern on the insulator film;
Forming an insulating layer in contact with the periphery of the side surface of the first electrode pattern and having a lower surface flush with the lower surface of the first electrode pattern;
Forming a wiring layer on the upper surface of the first electrode pattern opposite to the surface where the lower surface of the first electrode pattern is exposed;
Forming a second electrode pattern on a surface of the wiring structure film composed of the wiring layer and the insulating layer that is not in contact with the first electrode pattern;
Forming a first opening so that the insulator film and the protrusion are exposed on the metal support;
Removing the protrusion and forming a second opening in the insulator film so that the first electrode pattern is exposed;
A method of manufacturing a semiconductor device mounting substrate, comprising a step of adjusting an opening shape of the insulator film. Forming a plurality of protrusions at desired positions on the surface of the metal support,
Forming an insulator film in a region of the metal support surface other than the protrusion formation region,
Forming a first electrode pattern on the insulator film;
Forming a conductor pattern between and around the first electrode pattern;
Forming an insulating layer in contact with the periphery of the side surface of the first electrode pattern and having a lower surface flush with the lower surface of the first electrode pattern;
Forming a wiring layer on the upper surface of the first electrode pattern opposite to the surface where the lower surface of the first electrode pattern is exposed;
Forming a second electrode pattern on a surface of the wiring structure film composed of the wiring layer and the insulating layer that is not in contact with the first electrode pattern;
Forming a first opening so that the insulator film and the protrusion are exposed on the metal support;
Removing the protrusion and forming a second opening in the insulator film so that the first electrode pattern is exposed;
A method of manufacturing a semiconductor device mounting substrate, comprising a step of adjusting an opening shape of the insulator film. Forming a plurality of protrusions at desired positions on the surface of the metal support,
Forming an insulator film in a region of the metal support surface other than the protrusion formation region,
Forming a first electrode pattern on the insulator film;
Forming a via at a desired position in a region where the opening of the metal support is not formed,
Forming the conductor pattern between and around the first electrode pattern, and such that the conductor pattern can be connected to the metal support via the via;
Forming an insulating layer in contact with the periphery of the side surface of the first electrode pattern and having a lower surface flush with the lower surface of the first electrode pattern;
Forming a wiring layer on the upper surface of the first electrode pattern opposite to the surface where the lower surface of the first electrode pattern is exposed;
Forming a second electrode pattern on a surface of the wiring structure film composed of the wiring layer and the insulating layer that is not in contact with the first electrode pattern;
Forming a first opening so that the insulator film and the protrusion are exposed on the metal support;
Removing the protrusion and forming a second opening in the insulator film so that the first electrode pattern is exposed;
A method of manufacturing a semiconductor device mounting substrate, comprising a step of adjusting an opening shape of the insulator film. 4. The method according to claim 2, wherein the first electrode pattern and the conductor pattern are formed in the same step. A step of forming a thin film capacitor on at least one of the first electrode patterns between the step of forming the first electrode pattern and the step of forming a wiring layer (15) on the first electrode pattern; The method for manufacturing a semiconductor device mounting substrate according to any one of claims 1 to 4, further comprising: The method according to claim 1, further comprising, before the step of forming the first electrode pattern, a step of forming a concave portion in a region where the first opening is to be formed. Of manufacturing a semiconductor device mounting substrate. Forming a plurality of protrusions at desired positions on both surfaces of the metal support,
Forming an insulator film in a region excluding the protrusion formation region on both surfaces of the metal support,
A step of contact with a side surface around the first electrode pattern, and the lower surface to form an insulating layer such that on the first electrode pattern lower surface in the same plane,
Forming a first electrode pattern on the insulator film;
Forming a wiring layer on the upper surface of the first electrode pattern opposite to the surface where the lower surface of the first electrode pattern is exposed;
Forming a second electrode pattern on a surface of the wiring structure film composed of the wiring layer and the insulating layer that is not in contact with the first electrode pattern;
Dividing the metal support in half in the horizontal direction to form first and second metal supports;
Forming a first opening in the first and second metal supports such that the respective insulator films and the respective projections are exposed;
Removing the protrusion and forming a second opening in the insulator film so that the first electrode pattern is exposed;
A method of manufacturing a semiconductor device mounting substrate, comprising a step of adjusting an opening shape of the insulator film. Forming a plurality of protrusions at desired positions on both surfaces of the metal support,
Forming an insulator film in a region excluding the protrusion formation region on both surfaces of the metal support,
Forming a first electrode pattern on the insulator film;
Forming a conductor pattern between and around the first electrode pattern;
Forming an insulating layer in contact with the periphery of the side surface of the first electrode pattern and having a lower surface flush with the lower surface of the first electrode pattern;
Forming a wiring layer on the upper surface of the first electrode pattern opposite to the surface where the lower surface of the first electrode pattern is exposed;
Forming a second electrode pattern on a surface of the wiring structure film composed of the wiring layer and the insulating layer that is not in contact with the first electrode pattern;
Dividing the metal support in half in the horizontal direction to form first and second metal supports;
Forming a first opening in the first and second metal supports such that the respective insulator films and the respective projections are exposed;
Removing the protrusion and forming a second opening in the insulator film so that the first electrode pattern is exposed;
A method of manufacturing a semiconductor device mounting substrate, comprising a step of adjusting an opening shape of the insulator film. Forming a plurality of protrusions at desired positions on both surfaces of the metal support,
Forming an insulator film in a region excluding the protrusion formation region on both surfaces of the metal support,
Forming a first electrode pattern on the insulator film;
Forming a via at a desired position in a region where the opening of the metal support is not formed,
Forming the conductor pattern between and around the first electrode pattern, and such that the conductor pattern can be connected to the metal support via the via;
Forming an insulating layer in contact with the periphery of the side surface of the first electrode pattern and having a lower surface flush with the lower surface of the first electrode pattern;
Forming a wiring layer on the upper surface of the first electrode pattern opposite to the surface where the lower surface of the first electrode pattern is exposed;
Forming a second electrode pattern on a surface of the wiring structure film composed of the wiring layer and the insulating layer that is not in contact with the first electrode pattern;
Dividing the metal support in half in the horizontal direction to form first and second metal supports;
Forming a first opening in the first and second metal supports such that the respective insulator films and the respective projections are exposed;
Removing the protrusion and forming a second opening in the insulator film so that the first electrode pattern is exposed;
A method of manufacturing a semiconductor device mounting substrate, comprising a step of adjusting an opening shape of the insulator film. Laminating two first and second metal supports,
Forming a plurality of protrusions at desired positions on the surfaces of the first and second metal supports;
Forming an insulator film on the first and second metal support surfaces except for the protrusion formation region;
Forming a first electrode pattern on each of the insulator films of the first and second metal supports;
Forming an insulating layer so as to be in contact with a side surface of each of the first electrode patterns in the first and second metal supports, and a lower surface thereof is flush with a lower surface of the first electrode pattern;
Forming a wiring layer on the upper surface of the first electrode pattern opposite to the surface of the first and second metal supports on which the lower surface of the first electrode pattern is exposed;
Forming a second electrode pattern on a surface of the wiring structure film composed of the wiring layer and the insulating layer that is not in contact with the first electrode pattern;
Splitting the first and second metal supports in half in the horizontal direction;
Forming a first opening in the first and second metal supports such that the respective insulator films and the respective projections are exposed;
Removing the protrusion and forming a second opening in the insulator film so that the first electrode pattern is exposed;
A method of manufacturing a semiconductor device mounting substrate, comprising a step of adjusting an opening shape of the insulator film. Laminating two first and second metal supports,
Forming a plurality of protrusions at desired positions on the surfaces of the first and second metal supports;
Forming an insulator film on the first and second metal support surfaces except for the protrusion formation region;
Forming a first electrode pattern on each of the insulator films of the first and second metal supports;
Forming a conductor pattern between and around each of the first electrode patterns on the first and second metal supports;
Forming an insulating layer so as to be in contact with a side surface of each of the first electrode patterns in the first and second metal supports, and a lower surface thereof is flush with a lower surface of the first electrode pattern;
Forming a wiring layer on the upper surface of the first electrode pattern opposite to the surface of the first and second metal supports on which the lower surface of the first electrode pattern is exposed;
Forming a second electrode pattern on the surface opposite to the surface where the lower surface of the first electrode pattern not in contact with the insulating layer is exposed;
Splitting the first and second metal supports in half in the horizontal direction;
Forming a first opening in the first and second metal supports such that the respective insulator films and the respective projections are exposed;
Removing the protrusion and forming a second opening in the insulator film so that the first electrode pattern is exposed;
A method of manufacturing a semiconductor device mounting substrate, comprising a step of adjusting an opening shape of the insulator film. Laminating two first and second metal supports,
Forming a plurality of protrusions at desired positions on the surfaces of the first and second metal supports;
Forming an insulator film on both surfaces of the first and second metal supports except for the protrusion formation region;
Forming a first electrode pattern on each of the insulator films of the first and second metal supports;
Forming a via at a desired position in a region where the opening of the metal support is not formed,
Forming the conductor pattern between and around each of the first electrode patterns on the first and second metal supports and so that the conductor pattern can be connected to the metal support via the via; ,
Forming an insulating layer in contact with a side surface of each of the first electrode patterns in the first and second metal supports, and a lower surface thereof is flush with a lower surface of each of the first electrode patterns;
Forming a wiring layer on the upper surface of the first electrode pattern opposite to the surface of the first and second metal supports on which the lower surface of the first electrode pattern is exposed;
Forming a second electrode pattern on a surface of the wiring structure film composed of the wiring layer and the insulating layer that is not in contact with the first electrode pattern;
Splitting the first and second metal supports in half in the horizontal direction;
Forming a first opening in the first and second metal supports so that the insulator film and the protrusion are exposed;
Removing the protrusion and forming a second opening in the insulator film so that the first electrode pattern is exposed;
A method of manufacturing a semiconductor device mounting substrate, comprising a step of adjusting an opening shape of the insulator film. Forming a concave portion in a region where the first opening is to be formed before the step of bonding the first and second metal supports.
13. The method for manufacturing a semiconductor device mounting substrate according to any one of claims 10 to 12. A step of forming a thin-film capacitor on at least one of the first electrode patterns, between the step of forming the first electrode pattern and the step of forming a wiring layer on the first electrode pattern; The method for manufacturing a semiconductor device mounting substrate according to claim 7, wherein: 15. The semiconductor according to claim 1, further comprising a step of forming solder balls or connection pins so that the first electrode pattern is connected at a desired position of the second electrode pattern. A method for manufacturing a device mounting board. The metal support according to any one of claims 1 to 15, wherein the metal support is made of at least one metal selected from the group consisting of stainless steel, iron, nickel, copper and aluminum or an alloy thereof. A method for manufacturing a semiconductor device mounting substrate. 17. The semiconductor device mounting substrate according to claim 1, wherein the protrusion is formed by one or a combination of plating, etching, conductive paste, and machining. Production method. A method of manufacturing a semiconductor package, comprising: connecting a semiconductor device to at least one surface of a semiconductor device mounting substrate manufactured by the method according to claim 1. 19. The method according to claim 18, wherein the semiconductor device is flip-chip connected to one of a low-melting-point metal and a conductive resin. A second electrode pattern is formed on the metal support of the semiconductor mounting substrate manufactured by the method according to any one of claims 1 to 17, and after selectively removing the metal support, removing a protrusion. A method of inspecting a semiconductor device mounting substrate, wherein a continuity inspection is performed using contact terminals without using the contact terminals.

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