JP3553204B2 - Ｃｖｄ装置 - Google Patents

Ｃｖｄ装置 Download PDF

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Publication number
JP3553204B2
JP3553204B2 JP12920695A JP12920695A JP3553204B2 JP 3553204 B2 JP3553204 B2 JP 3553204B2 JP 12920695 A JP12920695 A JP 12920695A JP 12920695 A JP12920695 A JP 12920695A JP 3553204 B2 JP3553204 B2 JP 3553204B2
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JP
Japan
Prior art keywords
purge gas
substrate
holding means
substrate holding
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP12920695A
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English (en)
Japanese (ja)
Other versions
JPH08302473A (ja
Inventor
茂 水野
雅仁 石原
学 田上
肇 佐長谷
信行 高橋
Original Assignee
アネルバ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アネルバ株式会社 filed Critical アネルバ株式会社
Priority to JP12920695A priority Critical patent/JP3553204B2/ja
Priority to US08/634,676 priority patent/US5624499A/en
Priority to TW085104693A priority patent/TW307018B/zh
Priority to KR1019960012330A priority patent/KR100244956B1/ko
Publication of JPH08302473A publication Critical patent/JPH08302473A/ja
Application granted granted Critical
Publication of JP3553204B2 publication Critical patent/JP3553204B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H01L21/205—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP12920695A 1995-04-28 1995-04-28 Ｃｖｄ装置 Expired - Fee Related JP3553204B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP12920695A JP3553204B2 (ja) 1995-04-28 1995-04-28 Ｃｖｄ装置
US08/634,676 US5624499A (en) 1995-04-28 1996-04-18 CVD apparatus
TW085104693A TW307018B (enExample) 1995-04-28 1996-04-19
KR1019960012330A KR100244956B1 (ko) 1995-04-28 1996-04-23 씨브이디(cvd) 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12920695A JP3553204B2 (ja) 1995-04-28 1995-04-28 Ｃｖｄ装置

Publications (2)

Publication Number Publication Date
JPH08302473A JPH08302473A (ja) 1996-11-19
JP3553204B2 true JP3553204B2 (ja) 2004-08-11

Family

ID=15003765

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12920695A Expired - Fee Related JP3553204B2 (ja) 1995-04-28 1995-04-28 Ｃｖｄ装置

Country Status (4)

Country Link
US (1) US5624499A (enExample)
JP (1) JP3553204B2 (enExample)
KR (1) KR100244956B1 (enExample)
TW (1) TW307018B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250102350A (ko) * 2023-12-28 2025-07-07 세메스 주식회사 가스 분사 장치 및 이를 포함하는 기판 처리 장치

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US5690666A (en) * 1992-11-18 1997-11-25 Target Therapeutics, Inc. Ultrasoft embolism coils and process for using them
US5908504A (en) * 1995-09-20 1999-06-01 Memc Electronic Materials, Inc. Method for tuning barrel reactor purge system
US6121579A (en) * 1996-02-28 2000-09-19 Tokyo Electron Limited Heating apparatus, and processing apparatus
US6399143B1 (en) 1996-04-09 2002-06-04 Delsys Pharmaceutical Corporation Method for clamping and electrostatically coating a substrate
US5863340A (en) * 1996-05-08 1999-01-26 Flanigan; Allen Deposition ring anti-rotation apparatus
US6280790B1 (en) * 1997-06-30 2001-08-28 Applied Materials, Inc. Reducing the deposition rate of volatile contaminants onto an optical component of a substrate processing system
US5960158A (en) 1997-07-11 1999-09-28 Ag Associates Apparatus and method for filtering light in a thermal processing chamber
JPH1136076A (ja) * 1997-07-16 1999-02-09 Tokyo Electron Ltd Ｃｖｄ成膜装置およびｃｖｄ成膜方法
US5970214A (en) 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
US5930456A (en) 1998-05-14 1999-07-27 Ag Associates Heating device for semiconductor wafers
US6161311A (en) 1998-07-10 2000-12-19 Asm America, Inc. System and method for reducing particles in epitaxial reactors
US6210484B1 (en) 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
DE19851824C2 (de) * 1998-11-10 2002-04-04 Infineon Technologies Ag CVD-Reaktor
US6771895B2 (en) 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
KR100513395B1 (ko) * 1999-02-04 2005-09-09 삼성전자주식회사 화학 기상 증착용 웨이퍼 안착대의 표면 정화 장치
US6281141B1 (en) 1999-02-08 2001-08-28 Steag Rtp Systems, Inc. Process for forming thin dielectric layers in semiconductor devices
US6159299A (en) * 1999-02-09 2000-12-12 Applied Materials, Inc. Wafer pedestal with a purge ring
US6803546B1 (en) * 1999-07-08 2004-10-12 Applied Materials, Inc. Thermally processing a substrate
JP4057198B2 (ja) * 1999-08-13 2008-03-05 東京エレクトロン株式会社 処理装置及び処理方法
US6223447B1 (en) * 2000-02-15 2001-05-01 Applied Materials, Inc. Fastening device for a purge ring
US6521292B1 (en) * 2000-08-04 2003-02-18 Applied Materials, Inc. Substrate support including purge ring having inner edge aligned to wafer edge
JP2002129328A (ja) * 2000-10-31 2002-05-09 Applied Materials Inc 気相堆積方法及び装置
JP2002146531A (ja) * 2000-10-31 2002-05-22 Applied Materials Inc 気相堆積方法及び装置
JP4009100B2 (ja) * 2000-12-28 2007-11-14 東京エレクトロン株式会社 基板加熱装置および基板加熱方法
US20040127033A1 (en) * 2001-01-22 2004-07-01 Koichi Takatsuki Plasma processing device and plasma processing method
US6506252B2 (en) * 2001-02-07 2003-01-14 Emcore Corporation Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
US6547876B2 (en) 2001-02-07 2003-04-15 Emcore Corporation Apparatus for growing epitaxial layers on wafers by chemical vapor deposition
US6902623B2 (en) * 2001-06-07 2005-06-07 Veeco Instruments Inc. Reactor having a movable shutter
JP2003007643A (ja) * 2001-06-20 2003-01-10 Tokyo Electron Ltd 成膜処理装置
US6921556B2 (en) * 2002-04-12 2005-07-26 Asm Japan K.K. Method of film deposition using single-wafer-processing type CVD
ATE514801T1 (de) * 2003-08-01 2011-07-15 Sgl Carbon Se Halter zum tragen von wafern während der halbleiterherstellung
JP4200844B2 (ja) 2003-08-11 2008-12-24 東京エレクトロン株式会社 熱処理装置
DE602006021108D1 (de) * 2005-09-05 2011-05-19 Japan Pionics Vorrichtung zur chemischen Dampfabscheidung
JP4905934B2 (ja) * 2005-12-27 2012-03-28 サムコ株式会社 プラズマ処理方法及びプラズマ装置
KR100898793B1 (ko) * 2005-12-29 2009-05-20 엘지디스플레이 주식회사 액정표시소자용 기판 합착 장치
KR100804169B1 (ko) * 2005-12-31 2008-02-18 주식회사 아이피에스 박막증착챔버용 서셉터
KR100850123B1 (ko) * 2006-12-22 2008-08-04 동부일렉트로닉스 주식회사 웨이퍼 고정 스핀척
US8221557B2 (en) 2007-07-06 2012-07-17 Micron Technology, Inc. Systems and methods for exposing semiconductor workpieces to vapors for through-hole cleaning and/or other processes
KR101564582B1 (ko) * 2008-06-13 2015-10-30 주성엔지니어링(주) 기판처리장치
TWI391083B (zh) * 2010-05-14 2013-03-21 Altek Corp 支架及具有該支架之攝像裝置
US7905116B1 (en) 2009-10-14 2011-03-15 Pai Lung Machinery Mill Co., Ltd. Fabric collection structure for fabric cutting apparatus
US9816184B2 (en) 2012-03-20 2017-11-14 Veeco Instruments Inc. Keyed wafer carrier
US9633889B2 (en) * 2013-03-06 2017-04-25 Applied Materials, Inc. Substrate support with integrated vacuum and edge purge conduits
TWM468013U (zh) * 2013-07-18 2013-12-11 菘鐿科技有限公司 電子業製程共用式可拆裝替換之打線熱板
JP5950892B2 (ja) 2013-11-29 2016-07-13 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
WO2015112969A1 (en) 2014-01-27 2015-07-30 Veeco Instruments. Inc. Wafer carrier having retention pockets with compound radii for chemical vapor deposition systems
KR101605721B1 (ko) * 2014-05-29 2016-03-23 세메스 주식회사 베이크 장치 및 기판 처리 장치
KR102516885B1 (ko) * 2018-05-10 2023-03-30 삼성전자주식회사 증착 장비 및 이를 이용한 반도체 장치 제조 방법
CN111607785A (zh) * 2020-05-26 2020-09-01 北京北方华创微电子装备有限公司 一种加热装置及半导体加工设备
TWM630893U (zh) 2020-09-03 2022-08-21 美商威科精密儀器公司 用於磊晶沉積之基板反應器及用於化學氣相沉積反應器之基板載體
CN112501579B (zh) * 2020-09-16 2022-08-16 北京北方华创微电子装备有限公司 一种半导体反应腔室
US11828656B2 (en) * 2020-11-20 2023-11-28 Applied Materials, Inc. Reflector plate for substrate processing

Family Cites Families (3)

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JPS6139520A (ja) * 1984-07-31 1986-02-25 Hitachi Ltd プラズマ処理装置
US5230741A (en) * 1990-07-16 1993-07-27 Novellus Systems, Inc. Gas-based backside protection during substrate processing
JPH04345022A (ja) * 1991-05-22 1992-12-01 Sony Corp ブランケットメタルｃｖｄ装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250102350A (ko) * 2023-12-28 2025-07-07 세메스 주식회사 가스 분사 장치 및 이를 포함하는 기판 처리 장치
KR102871913B1 (ko) 2023-12-28 2025-10-15 세메스 주식회사 가스 분사 장치 및 이를 포함하는 기판 처리 장치

Also Published As

Publication number Publication date
KR100244956B1 (ko) 2000-02-15
JPH08302473A (ja) 1996-11-19
US5624499A (en) 1997-04-29
TW307018B (enExample) 1997-06-01
KR960039131A (ko) 1996-11-21

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