JP3355504B2 - 半導体装置の製造方法及びエッチング液 - Google Patents

半導体装置の製造方法及びエッチング液

Info

Publication number
JP3355504B2
JP3355504B2 JP05274494A JP5274494A JP3355504B2 JP 3355504 B2 JP3355504 B2 JP 3355504B2 JP 05274494 A JP05274494 A JP 05274494A JP 5274494 A JP5274494 A JP 5274494A JP 3355504 B2 JP3355504 B2 JP 3355504B2
Authority
JP
Japan
Prior art keywords
layer
mto
etching
film
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP05274494A
Other languages
English (en)
Japanese (ja)
Other versions
JPH07240474A (ja
Inventor
後藤日出人
美智夫 西村
政幸 諸井
Original Assignee
日本テキサス・インスツルメンツ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本テキサス・インスツルメンツ株式会社 filed Critical 日本テキサス・インスツルメンツ株式会社
Priority to JP05274494A priority Critical patent/JP3355504B2/ja
Priority to KR1019950003756A priority patent/KR950034787A/ko
Priority to EP95102763A priority patent/EP0669646A1/en
Priority to TW084103099A priority patent/TW288168B/zh
Publication of JPH07240474A publication Critical patent/JPH07240474A/ja
Application granted granted Critical
Publication of JP3355504B2 publication Critical patent/JP3355504B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
JP05274494A 1994-02-25 1994-02-25 半導体装置の製造方法及びエッチング液 Expired - Fee Related JP3355504B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP05274494A JP3355504B2 (ja) 1994-02-25 1994-02-25 半導体装置の製造方法及びエッチング液
KR1019950003756A KR950034787A (ko) 1994-02-25 1995-02-25 반도체 디바이스의 제조 방법 및 제조시에 사용된 에칭 용액
EP95102763A EP0669646A1 (en) 1994-02-25 1995-02-27 Improvements in or relating to semiconductor devices
TW084103099A TW288168B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1994-02-25 1995-03-31

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05274494A JP3355504B2 (ja) 1994-02-25 1994-02-25 半導体装置の製造方法及びエッチング液

Publications (2)

Publication Number Publication Date
JPH07240474A JPH07240474A (ja) 1995-09-12
JP3355504B2 true JP3355504B2 (ja) 2002-12-09

Family

ID=12923438

Family Applications (1)

Application Number Title Priority Date Filing Date
JP05274494A Expired - Fee Related JP3355504B2 (ja) 1994-02-25 1994-02-25 半導体装置の製造方法及びエッチング液

Country Status (4)

Country Link
EP (1) EP0669646A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP3355504B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR950034787A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW288168B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5847444A (en) * 1995-09-14 1998-12-08 Nec Corporation Semiconductor device with reduced aspect ratio contact hole
JP2977077B2 (ja) * 1996-08-16 1999-11-10 ユナイテッド マイクロエレクトロニクス コープ ツリー型コンデンサを備えた半導体メモリ素子
JP3210262B2 (ja) * 1996-08-16 2001-09-17 ユナイテッド マイクロエレクトロニクス コープ ツリー型コンデンサを備えた半導体メモリ素子の製造方法
JP3188843B2 (ja) * 1996-08-28 2001-07-16 ステラケミファ株式会社 微細加工表面処理剤及び微細加工表面処理方法
JP2000164586A (ja) 1998-11-24 2000-06-16 Daikin Ind Ltd エッチング液
JP3903215B2 (ja) * 1998-11-24 2007-04-11 ダイキン工業株式会社 エッチング液
JP2001203334A (ja) * 1999-11-10 2001-07-27 Mitsubishi Electric Corp キャパシタを有する半導体装置およびその製造方法
EP1680806A4 (en) 2003-10-28 2008-07-30 Sachem Inc CLEANING SOLUTIONS AND MEDICAMENTS AND METHOD FOR THEIR USE
KR100927080B1 (ko) * 2005-05-25 2009-11-13 다이킨 고교 가부시키가이샤 Ｂｐｓｇ막과 ｓｏｄ막을 포함하는 기판의 에칭액
CN111363551B (zh) * 2020-03-19 2021-11-30 常州星海电子股份有限公司 超大功率光阻玻璃芯片刻蚀用腐蚀液及腐蚀工艺

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4123228C2 (de) * 1991-07-12 1994-05-26 Siemens Ag Verfahren zur Dotierstoffkonzentrationsbestimmung mittels Ätzratenbestimmung in Borphosphorsilikatglasschichten für integrierte Halbleiter
US5180689A (en) * 1991-09-10 1993-01-19 Taiwan Semiconductor Manufacturing Company Tapered opening sidewall with multi-step etching process

Also Published As

Publication number Publication date
JPH07240474A (ja) 1995-09-12
EP0669646A1 (en) 1995-08-30
KR950034787A (ko) 1995-12-28
TW288168B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1996-10-11

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