JP3323171B2 - Package for storing semiconductor elements - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device housing package for housing various semiconductor devices operating at a high frequency such as optical communication, microwave communication and millimeter wave communication.

[0002]

2. Description of the Related Art Among conventional packages for housing various semiconductor devices operating at a high frequency such as optical communication, microwave communication or millimeter wave communication, a semiconductor device housing package (for example, used for microwave communication) is used. FIG. 3 shows a semiconductor package. In the figure,
Mounting portion 11a on which semiconductor element 16 is generally mounted on the upper surface
(Fe) -nickel (Ni) -cobalt (C
o) A base body 11 made of a metal material such as an alloy or a copper (Cu) -tungsten (W) alloy, and a preform of a brazing material A such as a silver braze on the upper surface of the base body 11 so as to surround the mounting portion 11a. And a frame 12 made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy having a notch 12a on the side.

Further, a metallized layer 13a which is joined to the notch portion 12a via a brazing material A and serves as an adhesive layer at the time of brazing, and a metallized wiring layer 13b which extends from the inside to the outside of the frame body 12 are formed. And an insulating terminal member 13 made of ceramics such as aluminum oxide (Al ₂ O ₃ ) having a frame-shaped iron-nickel-bonded to the upper surface of the frame 12 via a brazing material B preform such as silver brazing. A seal ring 14 made of a metal material such as a cobalt alloy or an iron-nickel alloy; and a lid 1 attached to an upper surface of the seal ring 14 and hermetically sealing the semiconductor element 16.
The semiconductor element 16 is bonded and fixed to the mounting portion 11a of the base 11 via an adhesive such as a low-melting glass, a resin adhesive, or a brazing material.
Are electrically connected to the metallized wiring layer 13b of the insulating terminal member 13 via bonding wires (not shown). Thereafter, the lid 15 is joined to the upper surface of the seal ring 14 via a sealing material made of low-melting glass, solder, or the like,
A semiconductor device as a product is obtained by hermetically housing the semiconductor element 16 in a container including the base 11, the frame 12, the insulating terminal member 13, the seal ring 14, and the lid 15.

[0004] The joining of the frame 12 and the insulating terminal member 13 is performed by utilizing the phenomenon that when the brazing material A on the base 11 is melted, it rises by the capillary phenomenon on the inner peripheral side surface of the notch 12a. , Inner peripheral side surface of notch 12a and metallized layer 1
3a by brazing. Also,
In order not to impair the airtightness inside the frame 12 due to a defect such as a void between the frame 12 and the insulating terminal member 13,
The volume of the brazing material A and / or the brazing material B and the heat capacity at the time of melting thereof were adjusted to be appropriate.

[0005]

However, in the conventional semiconductor package, if the volume of the brazing material A and / or the brazing material B and the heat capacity of the semiconductor package at the time of melting are appropriately adjusted, the frame Although the joint between the insulating terminal member 13 and the insulating terminal member 13 was good and did not impair the airtightness, when the height of the insulating terminal member 13 was higher, However, there has been a problem that the airtightness inside the frame 12 is impaired due to defects such as voids and insufficient brazing material.

[0006] The brazing material A,
To improve the advance of B, either increase the volume of the brazing material A, increase the heat capacity at the time of melting, or increase or increase them appropriately. Is the choice.

When the volume of the brazing material A is simply increased from the conventional one, the heat capacity is the same as the conventional one, but the brazing material A
Does not creep up on the inner peripheral side surface of the notch 12a due to the capillary phenomenon, and the brazing material A accumulates more at the joint interface between the base 11 and the insulating terminal member 13 than in the conventional case. For this reason, the airtightness inside the frame 12 is impaired at the joint between the frame 12 and the insulating terminal member 13 due to defects such as voids and insufficient brazing material.

On the other hand, when the heat capacity at the time of melting is increased as compared with the conventional case, and the volume of the brazing material A is the same as the conventional case,
Although the brazing material A creeps up on the inner peripheral side surface of the notch portion 12a due to the capillary phenomenon, the volume of the brazing material A is small with respect to the height of the insulating terminal member 13, so that the brazing material A A defect such as a shortage of brazing material occurs at the joint, and the airtightness is impaired. In addition, due to an increase in the amount of heat to be heated, a residual thermal stress due to a difference in thermal expansion between the base 11, the frame 12, and the insulating terminal member 13 becomes larger than before. Therefore, there is also a problem that the joining reliability thereof is extremely low.

On the other hand, brazing material A and / or brazing material B
(The conventional brazing material B does not cause a capillary phenomenon in joining the frame body 12 and the insulating terminal member 13). The volume was appropriately increased compared to the conventional case, and the heat capacity at the time of melting was appropriately increased compared to the conventional case. In this case, the volume of the brazing material A and / or the brazing material B at the joint between the frame body 12 and the insulating terminal member 13 becomes moderate, and the brazing material A and the And / or the brazing material B does not accumulate in large quantities. for that reason,
The airtightness of the joint is very good. However, due to an increase in heat capacity, residual thermal stress due to a difference in thermal expansion between the base 11, the frame 12, and the insulating terminal member 13 becomes larger than before. For this reason, there is also a problem that the joining reliability thereof is extremely low. Further, an increase in the volume and heat capacity of the brazing material A and / or the brazing material B also has a problem in that the manufacturing cost of the semiconductor package is significantly increased.

[0010] Another brazing material B, which is also used for joining the frame 12 and the insulating terminal member 13, increases the volume of the brazing material as compared with the conventional one, so that even if the heat capacity is the same as that of the conventional one, the brazing material can be melted. Sometimes, the amount flowing on the side surface of the frame 12 and the side surface of the seal ring 14 increases, and
1 and the frame 12 generate a pool of brazing material.
The gap between the inner peripheral side surface of the notch 12a and the metallized layer 13a was not completely buried so that the inside airtightness was improved. That is, there is a problem that a defect such as a void or a shortage of the brazing material occurs in a portion (joined portion) where the brazing material B is buried.

The present invention has been completed in view of the above problems, and an object of the present invention is to provide a method of forming a joint between a frame 12 and an insulating terminal member 13 even when the height of the insulating terminal member 13 is higher. By effectively preventing the occurrence of a problem such as residual thermal stress between the base body 11 and the frame body 12 and the insulating terminal member 13 due to voids, lack of brazing material, or accumulation of brazing material, the airtightness and bonding reliability of the bonding portion are effectively prevented. It is an object of the present invention to provide a semiconductor package which can improve the cost and maintain the manufacturing cost at the same level as the conventional one.

[0012]

A semiconductor package according to the present invention is attached to a base having a mounting portion on which a semiconductor element is mounted on an upper surface, and is mounted on the upper surface of the base so as to surround the mounting portion. A frame having a cutout penetrating inside and outside on the base side, an insulating terminal member fitted into the cutout and joined by a brazing material, and a lid attached to an upper surface of the frame. In the semiconductor device housing package, a groove is formed in the frame from the cutout portion to the upper surface,
When the width of the notch is X, the width of the groove is Y, the thickness of the frame is Z, and the depth of the groove is W, X / 5 ≦ Y ≦ X and Z / 6 ≦ W ≦ 3Z / 4.

According to the semiconductor package of the present invention, even when the height of the insulated terminal member fitted and joined to the notch of the frame is higher, the joint between the frame and the insulated terminal member can be formed. As a package structure that can effectively prevent voids and brazing material shortage and residual thermal stress between the base, the frame, and the insulating terminal member, a groove is formed in the frame from the notch to the upper surface, The size and dimensions of this groove are determined by the width of the
When the width of the groove is Y, the thickness of the frame is Z, and the depth of the groove is W, X / 5 ≦ Y ≦ X and Z / 6 ≦ W ≦ 3Z / 4. By forming the grooves having such dimensions, the manufacturing cost of the package can be maintained at the same level as before by suppressing the increase in the amount of the brazing material, and the airtightness of the brazed joint between the frame and the insulated terminal member can be improved. And the joining reliability of the brazing joint between the frame and the insulating terminal member can be improved.
As a result, the operation of the semiconductor element can be improved.

[0014]

Next, the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a perspective view showing a semiconductor package according to an embodiment of the present invention (a brazing material is not shown).
FIG. 2 is an enlarged perspective view (a brazing material is not shown) of a main part of the invention of the semiconductor package.

In these figures, 1 is a base, 2 is a frame, 3 is an insulating terminal member, 4 is a seal ring, 5 is a lid,
Reference numeral 6 denotes a semiconductor element such as an IC or an LSI. These substrates 1
The frame 2, the insulating terminal member 3, the seal ring 4, and the lid 5 constitute a container for accommodating the semiconductor element 6 therein.

The base 1 functions as a support member for supporting the semiconductor element 6 and a heat radiating plate for dissipating heat generated from the semiconductor element 6, and the semiconductor element 6 is placed at a substantially central portion of the upper surface thereof. The semiconductor element 6 is bonded and fixed to the mounting portion 1a via an adhesive such as lead (Pb) -tin (Sn) solder and the mounting portion 1a. The heat generated from the semiconductor element 6 is transmitted, efficiently radiated to the outside, and the operability of the semiconductor element 6 is improved.

The substrate 1 is made of a metal material such as an iron-nickel-cobalt alloy or a copper-tungsten alloy, which has a higher thermal conductivity than ceramics. The ingot of the nickel-cobalt alloy is manufactured into a predetermined shape by applying a conventionally known metal working method such as rolling or punching.

The base 1 has a metal having excellent corrosion resistance on its surface and excellent wettability with a brazing material, specifically,
Nickel layer of 0.5 to 9 μm thickness and 0.5 to 5 μm thickness
If the gold (Au) layer of m is sequentially applied by plating, the substrate 1 can be effectively prevented from being oxidized and corroded, and the semiconductor element 6 is firmly adhered and fixed to the upper surface of the substrate 1. be able to. Therefore, it is preferable that a metal layer such as nickel of 0.5 to 9 μm or gold of 0.5 to 5 μm be applied to the surface of the base 1 by plating.

The base 1 has a semiconductor element 6 on its upper surface.
The frame 2 is joined so as to surround the mounting portion 1a on which the semiconductor device 6 is mounted, and a space for accommodating the semiconductor element 6 is formed inside the frame 2.

The frame 2 is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy.
In the case of an iron-nickel alloy, an ingot of this alloy is manufactured into a predetermined shape by subjecting the ingot to metal working such as rolling or pressing, and the joining of the frame 2 to the base 1 is performed on the upper surface of the base 1. And the lower surface of the frame 2 are brazed via a brazing material such as silver braze which is a preform having an appropriate volume laid on the upper surface of the base 1.

The frame 2 has a cutout 2a on the side surface and a groove 2b on the upper surface of the cutout. The cutout 2a can be provided with a semiconductor element 6 and a bonding wire interposed therebetween. Electrical circuit and lead terminals (not shown)
Through these, the insulated terminal member 3 for performing electrical input / output is fitted. On the side surface of the notch 2a, a metallized layer 3a of the terminal member 3 is provided with a brazing material such as a silver braid formed as a preform having an appropriate volume laid on the upper surface of the base 1 and the upper surface of the frame 2, respectively. Through,
It is brazed by an appropriate heat capacity.

In the brazing material such as silver brazing which is laid on the upper surface of the base 1 and the upper surface of the frame 2 and has a moderate volume, the brazing material on the upper surface of the base 1 is formed in the notch 2a by the capillary phenomenon. The notch 2a and the metallized layer 3a are joined together with an appropriate heat capacity while creeping up to the side surface. On the other hand, the brazing material on the upper surface of the frame 2 transmits the notch 2a and the metallized layer 3a through the groove 2b. Bonding with an appropriate heat capacity. Therefore, no defects such as voids and insufficient brazing material are generated at the joint between the frame 2 and the insulating terminal member 3,
Further, the residual thermal stress due to the difference in thermal expansion between the base 1, the frame 2, and the insulating terminal member 3 after the joining can be reduced as compared with the related art. As a result, the airtightness inside the frame 2 and the bonding reliability between the base 1, the frame 2, and the insulating terminal member 3 can be improved.

As shown in FIG. 2, the width of the notch 2a is X, the width of the groove 2b is Y, the thickness of the frame 2 is Z, and the depth of the groove 2b is W, as shown in FIG. X / 5 ≦ Y ≦ X
And Z / 6 ≦ W ≦ 3Z / 4. In the case of such a size range, the airtightness inside the frame body 2 and the reliability of bonding between the base 1, the frame body 2, and the insulating terminal member 3 can be improved.

When the width Y of the groove 2b is less than X / 5, the brazing material laid on the upper surface of the frame 2 tends to be difficult to transmit through the groove 2b. Therefore, a defect such as a void or a shortage of brazing material is generated at a joint between the inner peripheral upper surface of the cutout portion 2a and the metallized layer 3a formed on the upper surface of the insulating terminal member 3, and the airtightness inside the frame body 2 is increased. Tends to spoil. Specifically, when 100 samples in such a case were prepared and subjected to an airtightness inspection, the number of samples having good airtightness was only 12, and the other samples were not airtight. On the other hand, when the width Y of the groove 2b exceeds the width X of the notch 2a, a void or a solder is formed at a joint between the both side surfaces of the notch 2a and the metallized layers 3a formed on both side surfaces of the insulating terminal member 3. Defects such as material shortage are generated, and the airtightness inside the frame 2 tends to be impaired. Specifically, a sample in such a case is
When 0 samples were prepared and subjected to an airtightness test, the number of samples having good airtightness was only 15, and the other samples had no airtightness.

Therefore, the relationship between the notch 2a and the width Y is X /
When 100 samples satisfying 5 ≦ Y ≦ X were prepared and subjected to an airtightness inspection, 76 samples had good airtightness, and the airtightness was significantly improved. Therefore, the relationship between the width X of the notch 2a and the width Y of the groove 2b is X
/ 5 ≦ Y ≦ X.

A sample in which the relationship between the width X of the notch 2a and the width Y of the groove 2b satisfies X / 4 ≦ Y ≦ X
When the individual pieces were prepared and subjected to an airtightness test, the airtightness was good for all 100 pieces. Therefore, X / 4 ≦ Y ≦
X is preferred.

When the depth W of the groove 2b in the thickness direction of the frame 2 is less than Z / 6, the brazing material laid on the upper surface of the frame 2 tends to be difficult to transmit through the groove 2b. . Therefore, defects such as voids and insufficient brazing material are generated at the joint between the inner peripheral upper surface of the cutout portion 2a and the metallized layer 3a formed on the upper surface of the insulating terminal member 3, and the airtightness inside the frame 2 is reduced. It tends to spoil. Specifically, when 100 samples in such a case were prepared and subjected to an airtightness inspection, the number of samples having good airtightness was only 14, and the other samples were not airtight. on the other hand,
When the depth W of the groove 2b in the thickness direction of the frame 2 exceeds 3Z / 4, the brazing material laid on the upper surface of the frame 2 tends to be very easily transmitted through the groove 2b. Therefore, the airtightness inside the frame 2 tends to be impaired due to insufficient brazing material at the joint between the frame 2 and the seal ring 6. In particular,
When 100 samples in such a case were prepared and subjected to an airtightness test, the number of samples having good airtightness was only 19 and 17 respectively, and the other samples were not airtight.

Therefore, the thickness Z of the frame 2 and the depth W of the groove 2b
And 100 samples with a relationship of Z / 6 ≦ W ≦ 3Z / 4 were prepared and subjected to an airtightness inspection. As a result, 63 samples with good airtightness were found to be significantly improved in airtightness. Was able to do. Therefore, the relationship between the thickness Z of the frame 2 and the depth W of the groove 2b is Z / 6 ≦ W ≦ 3Z / 4.

The remaining portion (ZW) of the groove 2b is 0.2 m
If it is less than m, the remaining portion of the groove 2b tends to be unable to withstand the stress at the time of joining the frame 2 and the insulating terminal member 3.
That is, since the remaining portion of the groove 2b is too thin, deformation or the like is caused, so that the brazing material and the insulating terminal member 3
May not be able to be completely filled with the metallized layer 3a on the upper surface of the substrate. Therefore, Z−W ≧ 0.2
mm.

The relationship between the thickness Z of the frame 2 and the depth W of the groove 2b in the thickness direction of the frame 2 is Z / 5 ≦ W ≦ 2Z / 3 and Z−W ≧ 0.2 mm. When 100 such samples were prepared and subjected to an airtightness inspection, all 100 samples showed good airtightness. Therefore, Z / 5 ≦ W ≦ 2Z
/ 3 and ZW ≧ 0.2 mm is more preferable.

As described above, by forming the groove 2b having the above dimensions in the frame 2, the insulating terminal member 3 is formed.
Even if the height is higher, the brazing material having an appropriate volume, which is laid on the upper surface of the frame 2, is transmitted through the groove 2 b with an appropriate heat capacity. Notch 2 with a certain amount of brazing material
Since the inner peripheral side surface of a is crawled up by the capillary phenomenon, the joint between the frame 2 and the insulating terminal member 3 has a defect such as a void or a shortage of the brazing material, or the base 1, the frame 2 and the insulating terminal due to the accumulation of the brazing material. Residual thermal stress between the member 3 can be effectively prevented. Therefore, the airtightness and bonding reliability of the bonding portion can be improved, and as a result, the operability of the semiconductor element 6 can be improved. Further, since there is no need to increase the volume of the brazing material or to increase the heat capacity to perform brazing, the manufacturing cost can be maintained at about the same level as before.

The frame 2 has a metal having excellent corrosion resistance on its surface and excellent wettability with the brazing material, specifically,
0.5 to 9 µm thick nickel layer and 0.5 to 5 µm thick
When the gold layers are sequentially applied by a plating method, it is possible to effectively prevent the frame body 2 from being oxidized and corroded. Therefore, it is preferable that a metal layer such as nickel of 0.5 to 9 μm or gold of 0.5 to 5 μm is applied to the surface of the frame 2 by plating.

In the notch 2a of the frame 2 having the groove 2b,
An insulating terminal member 3 comprising an insulator made of an electrically insulating material such as an aluminum oxide sintered body and a metallized layer 3a and a metallized wiring layer 3b provided on the upper surface of the insulator so as to be electrically insulated. And are joined via a brazing material. The metallized layer 3a functions as a medium for joining the brazing material between the base 1, the frame 2, and the terminal member 3, while the metallized wiring layer 3b functions as a conductive path for connecting the electrodes of the semiconductor element 6 to an external electric circuit. Functions and is electrically connected via bonding wires.

The insulator of the insulating terminal member 3 is, for example,
Aluminum oxide (Al ₂ 0 _3), silicon oxide (Si
O _2), magnesium oxide (MgO), sheet by well-known doctor blade method or calendar roll method this with suitable organic solvents to a raw material powder such as calcium oxide (CaO), the solvent was admixed form a paste A ceramic green sheet (ceramic green sheet) is obtained by forming into a shape, and thereafter, the ceramic green sheet is subjected to an appropriate punching process, and a plurality of ceramic green sheets are laminated one above the other and fired at a high temperature of about 1600 ° C. Be produced.

The metallized layer 3a and the metallized wiring layer 3b are made of tungsten, molybdenum (Mo), manganese (Mn) or the like. For example, a metal paste obtained by adding and mixing an organic solvent and a solvent to a powder of tungsten or the like is printed and applied in a predetermined pattern in advance on a ceramic green sheet serving as an insulator of the insulating terminal member 3 by a conventionally known screen printing method. Thus, an insulator is formed.

A seal ring 4 is joined via a brazing material to the upper surface of the frame 2 to which the insulating terminal member 3 has been fitted and joined.

The seal ring 4 is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy.
For example, an ingot made of a metal material of an iron-nickel-cobalt alloy is formed into a predetermined shape by performing a conventionally known metal working method such as a rolling method or a punching method.

Further, a lid 5 made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy is joined to the upper surface of the seal ring 4 with a sealing material such as low-melting glass or solder. Thereby, the semiconductor element 6 is composed of the base 1, the frame 2, the insulating terminal member 3, the seal ring 4, and the lid 5.
And is hermetically accommodated inside the container.

The lid 5 is joined to the upper surface of the frame 2 by, for example, welding such as a seam welding method, and the semiconductor element 6 may be hermetically accommodated in the container.

As described above, in the semiconductor package of the present invention, the base 1 having the mounting portion 1a on which the semiconductor element 6 is mounted on the upper surface, and the notch 2a penetrating inside and outside on the base 1 side (lower side). A frame 2 having a groove 2b; a notch 2a having a metallized layer 3a and a metallized wiring layer 3b;
And an insulated terminal member 3 fitted to the
A groove 2b is formed from the notch 2a of the frame 2 to the upper surface, and the dimension of the groove 2b is X, the width of the notch 2a is X, the groove 2b
Is Y, the thickness of the frame 2 is Z, and the depth of the groove 2b is W, X / 5 ≦ Y ≦ X and Z / 6 ≦ W ≦ 3Z / 4.

Then, after a brazing material such as silver brazing having an appropriate volume is interposed between the sealing ring 4 and the brazing material with an appropriate heat capacity, the semiconductor element 6 is melted.
Then, the electrode of the semiconductor element 6 is electrically connected to the metallized wiring layer 3b of the insulating terminal member 3 via a bonding wire through an adhesive such as a low-melting glass or a resin adhesive. Thereafter, the lid 5 is joined to the upper surface of the seal ring 4 via a sealing material made of low-melting glass, solder, or the like, so that the base 1, frame 2, insulating terminal member 3, seal ring 4, lid A semiconductor device as a product in which the semiconductor element 6 is hermetically accommodated in a container formed of the semiconductor device 6.

Thus, according to the semiconductor package of the present invention, a groove 2b is formed from the notch 2a to the upper surface of the frame 2, and the size and size of the groove 2b are X, the width of the notch 2a is X, the groove 2b Is Y, the thickness of the frame 2 is Z, and the depth of the groove 2b is W, X / 5 ≦ Y ≦ X and Z / 6 ≦ W ≦ 3Z
By setting to / 4, even when the height of the insulating terminal member 3 is higher, the brazing material having an appropriate volume and laid on the upper surface of the frame 2 with an appropriate heat capacity is transmitted through the groove 2b. Further, the brazing material having an appropriate volume laid on the upper surface of the base 1 creeps up on the inner peripheral side surface of the cutout portion 2a by a capillary phenomenon. As a result, defects such as voids at the joint between the frame 2 and the insulated terminal member 3 and insufficient brazing material, and residual thermal stress between the base 1 and the frame 2 and the insulated terminal member 3 due to the accumulation of the brazing material make the joint reliable. It is possible to effectively prevent the problem that the performance is deteriorated.

It should be noted that the present invention is not limited to the above embodiment, and that various changes may be made without departing from the scope of the present invention.

The present invention describes how to improve the brazing joint between the frame 2 and the insulating terminal member 3 when the height of the insulating terminal member 3 is higher. The present invention is effective not only in this case but also in a case where the inner peripheral side surface of the cutout portion 2a is high. That is, for example, even when the height of the insulating terminal member 3 is the same as that of the conventional case, and a metal plate is interposed between the insulating terminal member 3 and the base 1 for the purpose of improving electrical characteristics and adjusting the height. ,
The present invention is very effective.

The cross section of the groove 2b is not limited to a square or rectangular shape as shown in FIG. 2, but the molten brazing material is guided to improve the brazing joint between the frame 2 and the insulating terminal member 3. Anything can be used. For example, FIG.
It may have a shape as shown in FIG. In the figure, (a) shows a groove 2a having a rectangular cross section,
(B) is a groove 2a having a semicircular cross-sectional shape, (c) is a trapezoidal cross-sectional shape of the groove 2a and the width of the bottom surface of the groove 2a is reduced (X> X '), and (d) is a groove. 2a is a V-shaped (or mountain-shaped) cross-sectional shape, and (e) is a cross-sectional shape of the groove 2a having an inverted trapezoidal shape and a wide bottom surface of the groove 2a (X <
In X ') and (f), the cross-sectional shape of the groove 2a is L-shaped. Further, a plurality of such grooves 2b may be provided in one semiconductor package.

[0047]

According to the semiconductor package of the present invention, even when the height of the insulating terminal member fitted and joined to the cutout of the frame is higher, the joining of the frame and the insulating terminal member is possible. As a structure that can effectively prevent defects such as voids in the part and insufficient brazing material, and bonding defects due to residual thermal stress between the base, the frame, and the insulating terminal member, a groove is formed from the notch to the upper surface of the frame. X / 5 ≦ Y ≦ X where the width and width of the notch are X, the width of the groove is Y, the thickness of the frame is Z, and the depth of the groove is W. And Z / 6 ≦ W ≦ 3Z / 4.

By forming the grooves having such a size and size, the increase in the volume of the brazing material and the increase in the heat capacity can be suppressed, and the manufacturing cost of the semiconductor package can be maintained at the same level as the conventional one. The airtightness of the brazed joint between the body and the insulated terminal member and the joint reliability of the brazed joint between the base, the frame, and the insulated terminal member can be improved.
As a result, the operation of the semiconductor element can be improved.

[Brief description of the drawings]

FIG. 1 is an exploded perspective view showing an example of a semiconductor package according to an embodiment of the present invention.

FIG. 2 is an enlarged perspective view of a main part of the semiconductor package of FIG. 1;

FIG. 3 is an exploded perspective view showing an example of a conventional semiconductor package.

FIGS. 4A to 4F are cross-sectional views of a groove showing various embodiments of the groove of the present invention.

[Explanation of symbols]

 1: Base 1a: Placement section 2: Frame 2a: Notch 2b: Groove 3: Insulating terminal member 3a: Metallized layer 4: Seal ring 5: Lid 6: Semiconductor element

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-9-181207 (JP, A) JP-A-2-291152 (JP, A) JP-A-5-11443 (JP, U) JP-A-63 100840 (JP, U) Jikoh 4-38523 (JP, Y2) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 23/00-23/10 H01L 23/16-23/26 H03H 9/25

Claims (1)

(57) [Claims] A base having a mounting portion on which a semiconductor element is mounted on an upper surface, and a cutout attached to the upper surface of the base so as to surround the mounting portion and penetrating inside and outside on the base side. A semiconductor device housing package comprising: a frame having a frame, an insulated terminal member fitted into the cutout and joined by a brazing material, and a lid attached to an upper surface of the frame. A groove is formed from the notch to the upper surface, and the size of the groove is such that the width of the notch is X, the width of the groove is Y, the thickness of the frame is Z, and the depth of the groove is A package for housing semiconductor elements, wherein, when W is W, X / 5 ≦ Y ≦ X and Z / 6 ≦ W ≦ 3Z / 4.