JP2008186917A - Electronic component housing package, electronic device, and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electronic component housing package which suppresses occurrence of defective air-tightness of an electronic component that is mounted in a recess of an insulating substrate, for improved reliability of sealing. <P>SOLUTION: The electronic component housing package comprises: an insulating substrate 101 equipped with a recess 102 where an electronic component is mounted on its upper surface; a metallized layer 105 coated on a lid joint region 111 that encloses the recess 102 of the insulating substrate 101; and an Au plated layer 107 which is coated on thee metallized layer 105. On the Au plated layer 107, a coating region 112 is provided on which a solder 108 of AuSn alloy that contains Sn more than AuSn mass ratio at the eutectic point of AuSn alloy is coated. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an electronic component storage package in which an electronic component such as a crystal resonator is mounted on a main surface portion, an electronic device, and a sealing technique thereof.

  An electronic device in which an electronic component such as a crystal resonator is mounted on an insulating base as an oscillator that serves as a reference for frequency and time in electronic devices such as communication devices such as mobile phones and automobile phones, and information devices such as computers and IC cards. The device is widely used.

  The insulating substrate forming such an electronic device is a rectangular parallelepiped made of a ceramic material, and has a concave portion on the upper surface on which an electronic component is mounted. An electronic device is formed by bonding and holding the electrodes of the electronic component to the plurality of connection electrodes formed on the bottom surface of the recess.

  In an electronic device on which a conventional electronic component is mounted, the electronic component is electrically and mechanically connected to a plurality of connection electrodes formed in a concave portion of an insulating base by a bonding material, a bonding wire, and the like, and is supported and fixed. . When this electronic component is a piezoelectric vibrator, a conductive adhesive is used as a bonding material, and a portion other than the holding portion held by the bonding material vibrates to generate a predetermined signal. The oscillated signal is led out to the outside of the recess through a conductor layer or the like from a connection electrode arranged in advance in the holding unit.

In such an electronic device, in order to hermetically seal the electronic component mounted in the recess, the lid is bonded to the metallized layer on the insulating substrate using a brazing material. As a brazing material to be used, there is a PbSn eutectic alloy, but due to the recent lead-free process, a brazing material made of AuSn eutectic alloy has been proposed as an alternative. Note that a Ni underlayer and an Au plating layer are sequentially deposited on the metallized layer on the insulating substrate on which the lid is mounted.
JP 2001-196485 A

  However, the present inventor has found that the AuSn eutectic alloy is inferior in wettability to the Au plating layer as compared with the PbSn eutectic alloy which is a low temperature brazing material conventionally used. If the wettability is poor, there is a concern that the desired joining may not be achieved even if an attempt is made to join a metal lid to the upper surface of the insulating substrate after the electronic component is mounted in the recess of the insulating substrate. For example, if the electronic component to be mounted is a piezoelectric vibrator, if an airtight defect occurs in the joining of the lid, an oscillation failure occurs in which a predetermined frequency characteristic cannot be obtained. The body needs to be joined without interruption around the recess.

  In order to minimize the amount of brazing filler metal used as a raw material, a clad type lid has been proposed in which a brazing filler metal is fused around the back of the lid. In the case where the width of the material is not uniform, if the wettability with respect to the Au plating layer deposited on the metallized layer is inferior, the risk of occurrence of poor airtightness is further increased.

  The present invention has been devised in view of such problems in the prior art, and its purpose is to suppress the occurrence of airtight defects in electronic components mounted in the recesses of the insulating base, and to provide reliable sealing. It is an object of the present invention to provide an electronic component storage package, an electronic device, and a method for manufacturing the same, which can improve performance.

  An electronic component storage package according to the present invention includes an insulating base having a concave portion on which an electronic component is mounted on an upper surface, a metallized layer attached to a lid bonding region surrounding the concave portion of the insulating base, and the metallized layer An Au plating layer deposited thereon is provided, and a brazing material made of an AuSn alloy containing Sn more than the AuSn mass ratio at the eutectic point of the AuSn alloy is deposited on the Au plating layer. It is characterized in that it is provided with a deposition area of.

  In the electronic component storage package of the present invention, preferably, a Ni underlayer is formed between the metallized layer and the Au plating layer, and the thickness of the Au plating layer is 0.3 μm or more. It is characterized by being.

  The electronic component storage package according to the present invention is preferably characterized in that the brazing material is in a range of Au: Sn = 75: 25 to Au: Sn = 62: 38.

  An electronic device according to the present invention includes an electronic component mounted on the recess of the electronic component storage package according to any one of claims 1 to 3, and the brazing material disposed on the deposition region. A lid is joined to the Au plating layer.

  A method for manufacturing an electronic device according to the present invention includes a first step of mounting an electronic component in the recess of the electronic component storage package according to any one of claims 1 to 3, and a step on the Au plating layer. A second step of disposing the brazing material and the lid, and a third step of heating the brazing material and joining the lid on the Au plating layer. is there.

  The electronic component storage package according to the present invention is a deposition region for depositing a brazing material made of an AuSn alloy containing more Sn than the AuSn mass ratio at the eutectic point of the AuSn alloy on the Au plating layer. It has. Even when the Sn component of the AuSn alloy is eroded in the Au plating layer by adhering the brazing material to the deposition region when the lid is joined, the brazing material is Au-rich (AuSn alloy). It is suppressed that the mass ratio of Au is excessive as compared with the mass ratio at the eutectic point. When the Au is rich, the temperature of the melting point is higher than that when the AuSn alloy is Sn rich (the mass ratio of Sn is excessive compared to the mass ratio at the eutectic point of the AuSn alloy). The rise is extremely rapid. Therefore, it is possible to suppress the melting point of the AuSn alloy from rapidly increasing and the wettability from being extremely deteriorated. Therefore, the brazing material spreads sufficiently on the Au plating layer, and the lid and the Au plating layer can be satisfactorily joined.

  In the electronic component storage package of the present invention, preferably, a Ni underlayer is formed between the metallized layer and the Au plating layer, and the thickness of the Au plating layer is 0.3 μm or more. Therefore, when the lid is bonded onto the Au plating layer formed on the upper surface of the insulating substrate, deterioration of wettability due to diffusion of Ni of less than 0.3 μm is suppressed, and the lid and the Au plating layer are further improved. It becomes possible to join to.

  In the electronic component storage package of the present invention, preferably, the brazing material is within a range of Au: Sn = 75: 25 to Au: Sn = 62: 38, and thus has a thickness of 0.3 μm or more. Even if the Sn component of the AuSn alloy is eroded on the Au plating layer side having, it is possible to suppress the brazing material from becoming rich in Au and increasing the melting point of the AuSn alloy, thereby deteriorating the wettability.

  The mass ratio of Au: Sn = 62: 38 is the maximum point of the melting point of the AuSn alloy (in the range of Au rich, the melting point of the Sn is higher or lower than that of the mass ratio). Therefore, if the Sn mass ratio is further increased beyond this maximum point, when the Sn in the alloy is eroded by the Au plating layer, the mass ratio tends to the maximum point, and the melting point increases. Resulting in. Since an increase in melting point deteriorates wettability, the mass ratio of AuSn is preferably in the range up to Au: Sn = 62: 38.

  In the electronic device of the present invention, the electronic component is mounted in the concave portion of the electronic component storage package described in any of the above, and the lid is bonded to the Au plating layer by the brazing material disposed on the deposition region. Therefore, when an electronic component is mounted inside the recess and the recess is closed by the lid, an electronic device with excellent reliability that enables more reliable sealing can be provided.

  The method of manufacturing an electronic device according to the present invention includes a first step of mounting an electronic component in the recess of the electronic component storage package described above, and a brazing material and a lid disposed on the Au plating layer. A second step of heating and a third step of heating the brazing material to join the lid on the Au plating layer, so that the electronic component is mounted inside the recess and the recess is closed by the lid At this time, since the melting point of the brazing material is unlikely to rise, the influence of heat at the time of sealing to the electronic component is small, and a method for manufacturing an electronic device that enables more reliable sealing can be provided.

  Embodiments of an electronic component storage package (electronic device) according to the present invention will be described below in detail with reference to the accompanying drawings.

FIG. 1A is a plan view showing an example of an embodiment of an electronic component storage package according to the present invention, and FIG. 1B is a cross-sectional view taken along line XX ′ in FIG. . In FIGS. 1A and 1B, 101 is an insulating substrate, 102 is a recess, 103 is a connection electrode, 104 is an electronic component (a piezoelectric vibrator in this example), and 105 is a metallized layer.

  Further, in FIG. 1B, an enlarged view is shown in FIG. 1C so that the structure of the main part A can be easily understood. In FIG. 1C, 105 is a metallized layer, 106 is a Ni underlayer, 107 is an Au plating layer, 108 is a brazing material, and 109 is a lid. This brazing material 108 is made of an AuSn composition, and is for sealing the inside of the recess 102 of the insulating base 101 by bonding the Au plating layer 107 and the lid 109. Further, the formation area of the brazing material 108 is formed by a lid joining area 111 where the lid body 109 and the brazing material 108 are in contact, and a deposition area 112 where the brazing material 108 and the Au plating layer 107 are in contact.

  The insulating base 101 is for mounting and holding the electronic component 104, and is formed in a shape having a rectangular parallelepiped main surface portion, for example. The insulating base 101 has a recess 102 on the upper surface, and the two connection electrodes 103 formed on the bottom of the recess 102 are main surface portions on which the electronic component 104 is mounted.

  In the present embodiment, the insulating base 101 has a structure in which a frame is attached to an upper surface of a flat plate portion having a main surface portion on which an electronic component 104 is mounted so as to surround a portion on which the electronic component 104 is mounted. It is. An electronic component 104 is accommodated in a recess 102 formed of a flat plate portion and a frame.

  Such an insulating substrate 101 is formed of a ceramic material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, or a glass ceramic sintered body.

  If the insulating base 101 is made of, for example, an aluminum oxide sintered body, the insulating base 101 is formed by laminating a plurality of flat or frame ceramic green sheets and firing them. The flat ceramic green sheet is formed into a long sheet using, for example, a raw material powder such as aluminum oxide, silicon oxide, and calcium oxide together with an organic solvent, a binder, etc. using a sheet forming technique such as a doctor blade method or a calender roll method. It can be produced by molding and cutting it into predetermined dimensions. Further, the frame-shaped ceramic green sheet can be produced by punching the center portion of the flat ceramic green sheet using a punching process using a mold and forming into a frame shape.

  An electronic component 104 is mounted in the recess 102 of the insulating base 101. If the electronic component 104 is a piezoelectric vibrator, a crystal piece with a bifurcated shape on which one end part called a tuning fork type is carried and a rectangular crystal piece carried on both ends called an AT cut are mounted. The One end portion or both end portions of the crystal piece are bonded to a plurality of connection electrodes 103 formed on the bottom of the concave portion 102 of the insulating base 101 via the bonding material 113 and held so as to be able to vibrate. Then, the crystal piece vibrates due to a form such as bending vibration or thickness sliding motion, and oscillates a reference signal that is a reference for frequency and time.

Such a crystal piece is produced, for example, by cutting a crystal of crystal into a plate shape or a tuning fork shape along a predetermined crystal axis, and forming an electrode on this.

  A conductor layer 114 is formed from the connection electrode 103 formed on the bottom surface of the recess 102 of the insulating base 101 to the bottom surface of the insulating base 101.

  The connection electrode 103 and the conductor layer 114 are electrically connected to the piezoelectric vibrator and function as conductive paths that electrically connect the piezoelectric vibrator to an external electric circuit. That is, the piezoelectric vibrator is electrically and mechanically connected to the connection electrode 103 via a bonding material 113 made of a conductive adhesive, and a portion of the conductor layer 114 exposed to the lower surface of the insulating base 101 is externally connected. By electrically connecting to a circuit board (not shown) via solder or the like, the piezoelectric vibrator is electrically connected to the external circuit board via the connection electrode 103 and the conductor layer 114.

  By this electrical connection, a reference signal oscillated by the piezoelectric vibrator is supplied to the external circuit board, power is supplied from the external circuit board to the piezoelectric vibrator, and the like. The external circuit board is an electric circuit formed on a mounting board (motherboard or the like, not shown) incorporated in an electronic device such as a mobile phone or a notebook computer.

  The connection electrode 103 and the conductor layer 114 are made of a metal material such as tungsten, molybdenum, manganese, copper, silver, palladium, gold, or platinum, and are formed in the form of a metallized layer, a plated layer, or the like. If the connection conductor 103 and the conductor layer 114 are made of, for example, a tungsten metallized layer, a metal paste prepared by adding an organic solvent and a binder to tungsten powder is applied to a ceramic green sheet serving as the insulating substrate 101 in a predetermined pattern. It can be formed by printing with.

Of the conductor layer 114, the conductor layer 114 formed from the inside of the recess 102 to the lower surface of the insulating base 101 is, for example, a via conductor or a notch formed on the outer periphery of the insulating base 101 (so-called castellation, not shown). It is formed so as to be led out by a metallized layer deposited on the inner surface of the substrate.

  According to the electronic component storage package of the present invention, the brazing material 108 made of an AuSn alloy containing more Sn than the AuSn mass ratio at the eutectic point of the AuSn alloy is deposited on the Au plating layer 107. A deposition region 112 is provided.

  In this specification, the AuSn mass ratio at the eutectic point of the AuSn alloy, and the AuSn eutectic alloy are the mass ratio of Au: Sn = 82: 18 to Au: Sn = 78: 22. Or the AuSn alloy which is this mass ratio.

  Therefore, even when the Sn component of the AuSn alloy is eroded in the Au plating layer 107 due to the brazing material 108 being deposited on the deposition region when the lid is joined, the brazing material 108 is Au rich. (It is said that the ratio of Au is excessive as compared with the mass ratio at the eutectic point of the AuSn alloy). When Au-rich, the AuSn alloy is Sn-rich (meaning that the Sn ratio is excessive compared to the mass ratio at the eutectic point of the AuSn alloy), and the change in the mass ratio The temperature rise of the melting point with respect to is extremely rapid. Therefore, it is possible to suppress the melting point of the AuSn alloy from rapidly increasing and the wettability from being extremely deteriorated. As a result, the brazing material 108 is sufficiently spread on the Au plating layer 107, and the lid 109 and the Au plating layer 107 can be satisfactorily bonded.

  In addition, as shown in FIG. 1 c, a fillet 108 </ b> F is formed on the side surface of the lid body 109 by the brazing material 108 in a region outside the lid body 109 in a plan view in the deposition area 112 of the Au plating layer 107. In this case, the thickness of the brazing material 108 of the fillet 108F becomes thinner than in other regions. For this reason, when the volume ratio between the Au plating layer and the AuSn alloy is taken into consideration, the ratio of the Au plating layer becomes high in this region, so that the melting point of the brazing filler metal 108 is increased particularly by eating the Sn component of the AuSn alloy. However, by using the brazing filler metal 108 of the present invention, an increase in the melting point is suppressed even in this region. Accordingly, the fillet 108F having a skirt that spreads well to the outside is formed, the lid is joined well, and the sealing performance is improved.

  A lid 109 that seals the recess 102 of the insulating base 101 is made of a metal such as an iron-nickel-cobalt alloy, and a brazing material 108 is attached to the joint surface. Further, although the thickness of the brazing material depends on the size of the insulating base 101, it is formed to be about 15 to 40 μm. Even if the lid 109 is deformed, the thickness of the brazing material is around the Au plating layer 107 of the insulating base 101. A sufficient amount of the brazing material 108 is secured so that the joining can be performed without interruption. The lid 109 is formed so that the outer periphery thereof is located inside the outer periphery of the Au plating layer in order for the brazing material 108 to form the above-described fillet 108F.

  Further, according to the electronic component storage package of the present invention, preferably, the Ni underlayer 106 is formed between the metallized layer 105 and the Au plating layer 107, and the thickness of the Au plating layer 107 is 0. .3 μm or more.

  With this configuration, when the lid body 109 is bonded onto the Au plating layer 107 formed on the upper surface of the insulating base 101, the wettability deteriorates due to the diffusion of Ni from the Ni underlayer onto the upper surface of the Au plating layer. Therefore, the lid 109 and the Au plating layer 107 can be bonded more satisfactorily.

  Moreover, according to the electronic component storage package of the present invention, the brazing material 108 is preferably in the range of Au: Sn = 75: 25 to Au: Sn = 62: 38. Therefore, even if the Sn component of the AuSn alloy is eroded by the Au plating layer 107 having a thickness of 0.3 μm or more, it is possible to prevent the brazing material from becoming rich in Au and the melting point of the AuSn alloy to rise to deteriorate the wettability. .

  The mass ratio of Au: Sn = 62: 38 is the maximum point of the melting point of the AuSn alloy (in the range of Au rich, the melting point of the Sn is higher or lower than that of the mass ratio). Therefore, if the Sn mass ratio is further increased beyond this maximum point, when the Sn in the alloy is eroded by the Au plating layer, the mass ratio tends to the maximum point, and the melting point increases. Resulting in. Since an increase in melting point deteriorates wettability, the mass ratio of AuSn is preferably in the range up to Au: Sn = 62: 38.

  For example, when the recess 102 is sealed using a brazing material 108 having a weight ratio of Au: Sn = 75: 25, the melting point of the brazing material 108 itself before Sn is eaten is about 340 ° C. If the heat treatment temperature at the time of joining the body 109 to the Au plating layer 107 is 380 ° C., the temperature difference between the melting point of the brazing filler metal 108 and the heat treatment temperature is 40 ° C., but the Au plating layer 108 is made of Sn of the AuSn alloy. When the components are eaten, the melting point of the brazing material 108 decreases away from the maximum point, and as a result, the temperature difference between the actual melting point and the heat treatment temperature tends to be larger than 40 ° C. It can be melted to improve wettability.

  According to the electronic device of the present invention, the electronic component 104 is mounted in the concave portion 102 of the electronic component storage package (insulating base 101) described above, and the brazing material 108 disposed on the deposition region 112 is used. The lid body 109 is joined to the Au plating layer 107.

  Thereby, when the electronic component 104 is mounted inside the concave portion 102 and the concave portion 102 is closed by the lid body 109, an electronic device with excellent reliability that enables more reliable sealing can be provided.

  Here, the metallized layer 105 is made of a sintered metal powder such as tungsten or molybdenum. The metallized layer 105 is formed in a frame shape having a width of about 0.2 to 0.5 mm and a thickness of about 10 to 50 μm, for example. The metallized layer 105 functions as a base metal for bonding the lid 109 to the insulating base 101. A lid 109 is bonded onto the metallized layer 105 via a brazing material 108.

  In addition, on the exposed surfaces of the connection electrode 103 and the conductor layer 114, the oxidative corrosion of each conductor is suppressed, and the connection between the connection electrode 103 and the electrode of the electronic component 104 and the connection with the external circuit board are strengthened. In addition, a plating layer made of Ni / Au, for example, a Ni plating layer having a thickness of about 1 to 10 μm (to become the Ni underlayer 106) and a Au plating layer 107 having a thickness of about 0.3 to 3 μm are sequentially covered. It is worn. If the thickness of the Au plating layer 107 is less than 0.3 μm, when the lid 109 is bonded onto the Au plating layer 107 formed on the upper surface of the insulating base 101, Ni in the Ni underlayer 106 is Au plated. This is not preferable because it may diffuse to the surface of the layer 107 and cause deterioration of wettability.

  The joining of the metallized layer 105 and the lid 109 via the brazing material 108 is performed by a heat treatment method such as a tunnel furnace or a batch furnace. Other heat treatment methods such as electron beam welding and electron beam welding are also possible. In this case, the lid body 109 is locally heated within a range in which Ni in the Ni underlayer 106 does not diffuse to the surface of the Au plating layer 107 and becomes higher than the melting point of the brazing material 108, so that the inside of the recess 102 is well sealed. It is possible to stop.

  According to the method for manufacturing an electronic device of the present invention, the first step of mounting the electronic component 104 in the recess 102 of the electronic component storage package (insulating base 101) according to any of the above, and Au plating A second step of disposing the brazing material 108 and the lid body 109 on the layer 107; and a third step of heating the brazing material 108 and bonding the lid body 109 on the Au plating layer 107. .

  Accordingly, when the electronic component 104 is mounted inside the concave portion 102 and the concave portion 102 is closed by the lid 109, the melting point of the brazing material 108 is unlikely to rise, and therefore the influence of heat when sealing the electronic component 104 is performed. Therefore, it is possible to realize a method for manufacturing an electronic device that is small and enables more reliable sealing.

  First, in the first step of the manufacturing method of the present invention, the electronic component 104 is electrically connected to the plurality of connection electrodes 103 formed in the recess 102 of the insulating base 101 by a bonding material 113, bonding wires (not shown), or the like. It is mechanically connected and supported and fixed. When the electronic component 104 is, for example, a piezoelectric vibrator, the bonding material 113 that holds the electronic component 104 is, for example, a metal filler such as gold, silver, copper, aluminum, or nickel, or a conductive filler such as carbon powder. A conductive adhesive mixed in a resin such as a resin can be used.

  In the second step, the brazing material 108 and the lid body 109 are disposed on the Au plating layer 107. In this case, for example, a lid 109 having a brazing material 108 formed on the back surface is overlaid on the center of the upper surface of the insulating base 101, and a spring, a clip, or the like is attached so that the brazing material 108 and the Au plating layer 107 are in contact with each other. It is temporarily fixed on the insulating substrate 101 by the used fixing jig.

  Further, in the third step, the brazing material 108 is heated to bond the lid 109 on the Au plating layer 107. In this case, for example, the brazing material 108 is melted by transporting the insulating base 101 on which the lid 109 is temporarily fixed with the brazing material 108 sandwiched in the tunnel furnace and raising the temperature so as to be equal to or higher than the melting point of the brazing material 108. The brazing material 108 deposited on the lid 109 and the Au plating layer 107 formed on the upper surface of the insulating base 101 are joined together. At this time, until the brazing material 108 is melted and the inside of the recess 102 is hermetically sealed, nitrogen gas, which is an inert gas, is removed from the tunnel furnace so that the electrodes of the bonding material 113 and the electronic component 104 are not oxidized. It is preferable to introduce in and process in a reducing atmosphere. Here, if the heat treatment method is a method using a batch type heating furnace, it is formed on the upper surface of the brazing material 108 and the insulating substrate 101 deposited on the lid 109 by heating the heating furnace in a vacuum state. It is also possible to hermetically seal the inside of the recess 102 by bonding the Au plating layer 107. Since the molten brazing material 108 has good wettability with the Au plating layer 107, a fillet 108 </ b> F of the brazing material 108 is formed on the outer peripheral side surface of the lid 109.

  In addition, this invention is not limited to the example of above-mentioned embodiment, In the range which does not deviate from the summary of this invention, it can deform | transform into various forms.

  For example, in the above example, the electronic component mounted on the insulating base is a piezoelectric vibrator. However, the electronic device is a semiconductor element or other electronic component, or an electronic device in which a plurality of electronic components are simultaneously accommodated in a recess. Also good.

  Moreover, although it was set as the iron-nickel-cobalt alloy about the cover body, you may use another metal with a low coefficient of linear expansion, for example, iron-nickel. Further, the lid is formed of the same ceramic material as the insulating base, and a frame-like metallized layer, Ni underlayer, Au on the back of the lid so that it can be joined to the Au plating layer on the top of the insulating base. It is good also as a structure which forms a plating layer sequentially and seals a recessed part with a brazing material. In this case, when an electronic component is mounted inside the recess and the recess is closed by the lid, the Sn component of the AuSn alloy is eaten not only by the Au plating layer on the insulating base side but also by the Au plating layer on the lid side. Thus, since the melting point of the brazing material moves in a lower direction, it is possible to effectively suppress the temperature difference between the original melting point of the brazing material and the heat treatment temperature.

(A) is a top view which shows an example of embodiment of the electronic component storage package of this invention, and an electronic device, (b) is sectional drawing in XX 'of Fig.1 (a), (c) is It is a principal part enlarged view of FIG.1 (b).

Explanation of symbols

101 ... Insulating substrate 102 ... Recess 103 ... Connection electrode 104 ... Electronic component 105 ... Metallized layer 106 ... Ni underlayer 107 .... Au plating layer 108 ... Brazing material (AuSn alloy)
108F ··· Fillet 109 ··· Lid 110 ··· External electrode 111 ··· Lid joint region 112 ··· Adhesion region 113 ··· Bonding material 114 ... Conductor layer A ...

Claims (5)

An insulating substrate having a concave portion on which an electronic component is mounted on the upper surface, a metallized layer deposited on a lid bonding region surrounding the concave portion of the insulating substrate, and an Au plating layer deposited on the metallized layer And a deposition region for depositing a brazing material made of an AuSn alloy containing more Sn than the AuSn mass ratio at the eutectic point of the AuSn alloy. Electronic component storage package. 2. The electronic component according to claim 1, wherein a Ni underlayer is formed between the metallized layer and the Au plating layer, and the thickness of the Au plating layer is 0.3 μm or more. Storage package. 3. The electronic component storage package according to claim 2, wherein the brazing material is in a range of Au: Sn = 75: 25 to Au: Sn = 62: 38. The electronic component is mounted on the concave portion of the electronic component storage package according to any one of claims 1 to 3, and the Au plating layer is covered with the brazing material disposed on the deposition region. An electronic device characterized by bonding. A first step of mounting an electronic component in the recess of the electronic component storage package according to any one of claims 1 to 3;
A second step of disposing the brazing material and the lid on the Au plating layer;
And a third step of joining the lid on the Au plating layer by heating the brazing material.

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