JP3279849B2 - Semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device used for an information processing device such as a computer.

[0002]

2. Description of the Related Art Conventionally, a semiconductor device used for an information processing apparatus such as a computer includes a semiconductor element, a die pad on which the semiconductor element is mounted, and a large number of external lead terminals surrounding the die pad and extending at predetermined intervals from near the die pad. And a mold resin that covers a part of the semiconductor element, the die pad, and the external lead terminal. In such a semiconductor device, the die pad and a large number of external lead terminals are integrally formed via a frame-shaped connecting band. Prepare a connected lead frame and mount and fix a semiconductor element on the upper surface of the die pad of the lead frame, and then electrically connect each electrode of the semiconductor element and an external lead terminal via a bonding wire, and By covering the semiconductor element, die pad and part of the external lead terminals with mold resin It has been produced Te.

The lead frame is made of a metal mainly composed of copper, a metal mainly composed of iron, or the like. And the like.

However, in a conventional lead frame formed by punching or etching, the width of an external lead terminal and the distance between adjacent external lead terminals are set to 0.
It is difficult to make it extremely narrow, 3 mm or less,
For this reason, in recent years, when high integration is advanced and a semiconductor element having a significantly increased number of electrodes is mounted, it is impossible to arrange a large number of external lead terminals close to the semiconductor element. Accordingly, the length of the bonding wire for electrically connecting each electrode of the semiconductor element to the external lead terminal becomes long. As a result, when the semiconductor element, the die pad, and a part of the external lead terminal are covered with the mold resin, the bonding wire becomes long. When an external force is applied to the bonding wire, the bonding wire is easily deformed by a slight external force, and adjacent bonding wires come into contact with each other to cause an electric short circuit.

Therefore, in order to solve the above-mentioned drawbacks, it is made of an electrically insulating material such as an aluminum oxide sintered body, and a mounting portion for mounting a semiconductor element on an upper surface and a fan-like high density lead from the mounting portion to the outer peripheral portion. An insulating base having a large number of metallized wiring layers and a large number of external lead terminals whose inner ends are arranged at substantially the same intervals as the intervals of the metallized wiring layers at the outer peripheral portion of the insulating base are connected to a frame-like connecting band at the outer end. Prepare a lead frame integrally connected by the above, and join the inner ends of the external lead terminals to the metallized wiring layer of the insulating base via silver brazing, soldering, brazing material such as gold-tin brazing, and then A semiconductor element is mounted and fixed on a mounting portion of the insulating base so that each electrode of the semiconductor element and a metallized wiring layer are electrically connected via metal bumps. Edge base, a semiconductor device of a part without so as to cover a mold resin of the semiconductor element and the external lead terminals has been proposed.

In such a semiconductor device, after the insulating base, the semiconductor element, and a part of the external lead terminals are covered with a mold resin, the external lead terminals are cut and separated from the frame-shaped connecting band, and each external lead terminal is electrically connected. By making them independent and connecting each external lead terminal to an external electric circuit, the internal semiconductor element is electrically connected to the external electric circuit.

[0007]

However, in the above-mentioned semiconductor device, a gap is formed between the insulating base and the semiconductor element by the height of the metal bump. When a part of the lead terminal is covered with the mold resin, air existing in the gap between the insulating base and the semiconductor element is not sufficiently discharged to the outside and remains between the insulating base and the semiconductor element to reduce the thermal conductivity. A large number of bad voids are formed, and as a result, heat generated during operation of the semiconductor element is not satisfactorily radiated and removed to the outside through the insulating base and the mold resin, and the semiconductor element is generated by the heat generated by the semiconductor element itself. The high temperature has caused a disadvantage that the semiconductor element may be damaged by heat or malfunction.

[0008]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional drawbacks, and has as its object to provide a semiconductor device capable of operating normally and stably at a low internal semiconductor element temperature. It is in.

[0009]

SUMMARY OF THE INVENTION The present invention relates to an insulating substrate having a mounting portion on which a semiconductor element is mounted in the center of the upper surface, and a metallized wiring layer extending from the periphery of the mounting portion to the outer periphery, and mounting of the insulating substrate. A semiconductor element mounted on a portion and having an electrode connected to the metallized wiring layer via a metal bump, and a mold resin covering the insulating base and the semiconductor element, wherein the semiconductor element is A through-hole penetrating in the thickness direction is formed.

[0010]

The semiconductor device of the present invention has a through-hole in the thickness direction of the semiconductor element mounted on the insulating base.
After mounting the semiconductor element on the insulating base via the metal bump,
When the insulating base and the semiconductor element are covered with the mold resin, air existing between the insulating base and the semiconductor element is satisfactorily exhausted to the outside through a hole provided in the semiconductor element. There is no generation of a large amount of voids having poor thermal conductivity between them.

[0011]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. FIG. 1 shows an embodiment of the semiconductor device of the present invention.
Is an insulating base, 2 is an external lead terminal, and 3 is a semiconductor element.

The insulating base 1 has a mounting portion 1a for mounting a semiconductor element at the center of the upper surface thereof.
The semiconductor element 3 is mounted on a.

The insulating substrate 1 is made of an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body,
It is made of an electrically insulating material such as a silicon carbide sintered body or a glass ceramic sintered body. For example, in the case of an aluminum oxide sintered body, it is suitable for a raw material powder such as aluminum oxide, silicon oxide, calcium oxide, and magnesium oxide. A ceramic green sheet (green ceramic sheet) is obtained by adding and mixing a binder and a solvent to form a slurry and forming the sheet into a sheet by using a conventionally known doctor blade method. It is manufactured by punching into an appropriate shape by a punching method or the like, laminating a plurality of sheets as necessary, and finally firing the ceramic green sheet at a temperature of about 1600 ° C. in a reducing atmosphere.

The insulating base 1 has a mounting portion 1a.
A large number of metallized wiring layers 4 spreading in a fan shape from the metallized wiring layer 4 are formed on the mounting portion 1a of the metallized wiring layer 4, and each electrode of the semiconductor element 3 is formed of a metal bump 5 made of a metal such as solder. An external lead terminal 2 connected to an external electric circuit is joined to an outer peripheral portion of the insulating base 1 via a brazing material 6.

The metallized wiring layer 4 is made of a high melting point metal powder such as tungsten, molybdenum, manganese or the like. By printing and applying a predetermined pattern on the ceramic green sheet to be used as a substrate 1 by using a conventionally known thick film method such as a screen printing method, the ceramic green sheet spreads in a fan shape from the mounting portion 1a of the insulating substrate 1 to the upper surface of the outer peripheral portion of the insulating substrate 1. Is formed as follows.

An external lead terminal 2 joined to the metallized wiring layer 4 via a brazing material 6 serves to connect the semiconductor element 3 housed therein to an external electric circuit, and connects the external lead terminal 2 to an external electric circuit. By connecting to the wiring conductor of the circuit board, the semiconductor element 3 is electrically connected to the external electric circuit via the metallized wiring layer 4 and the external lead terminal 2.

The external lead terminal 2 is made of a metal such as a copper alloy containing copper as a main component or an iron alloy containing iron as a main component. For example, a copper alloy ingot is formed by a conventionally known rolling method. Then, a plate having a predetermined thickness is formed, and the plate is etched and punched to form a predetermined shape.

In order to attach the external lead terminals 2 to the metallized wiring layer 4 of the insulating substrate 1, the inner ends of the external lead terminals 2 should be substantially the same as the distance between the metallized wiring layers 4 at the outer peripheral portion of the insulating substrate 1. Many external lead terminals 2 arranged in
Of the external lead terminals 2 on the metallized wiring layer 4 of the insulating base 1 with silver brazing, soldering, and the like. The brazing material 6 such as a gold-tin brazing material is interposed and heated to a temperature equal to or higher than the temperature at which the brazing material 6 is melted to melt the brazing material 6, and then the molten brazing material 6 is cooled. A method of solidifying is employed.

The semiconductor element 3 mounted and mounted on the mounting portion 1a of the insulator 1 has a large number of electrodes 3a on its lower surface, and the electrodes 3a and the metallized wiring layer 4 have metal bumps 5 formed thereon. Are joined through.

The metal bumps 5 are made of, for example, a metal such as tin-lead solder, and the tin-lead solder is previously welded to each electrode 3a of the semiconductor element 3 or a predetermined position of the metallized wiring layer 4 of the insulating base 1. In order to connect to the metallized wiring layer 4 of the insulating substrate 1 via the metal bumps 5 of the electrodes 3a of the semiconductor element 3, for example, an insulating substrate The semiconductor element 3 is mounted on the mounting portion 1a of the semiconductor device 3 with a metal bump 5 interposed between each electrode 3a of the semiconductor element 3 and the metallized wiring layer 4, and the temperature at which the metal bump 5 made of solder melts is placed. Heat to the above temperature to melt the metal bumps 5, and then
A method of connecting by cooling and solidifying the molten metal bump 5 is adopted.

Further, a through hole 3b penetrating the semiconductor element 3 in the thickness direction thereof is formed. After the semiconductor element 3 is mounted on the insulating base 1, the through hole 3b is formed on the insulating base 1, the semiconductor element 3, and the outside. When a part of the lead terminal 2 is covered with a mold resin 7 described later, the insulating base 1 and the semiconductor element 3
And serves as a discharge hole for discharging air existing between the outside and the outside.

Since the semiconductor element 3 is formed with a through hole 3b penetrating in the thickness direction, when the insulating resin 1, the semiconductor element 3 and a part of the external lead terminal 2 are covered with the mold resin 7, , Insulating base 1 and semiconductor element 3
Is satisfactorily discharged to the outside through the through-hole 3b formed in the semiconductor element 3, so that a gap having poor thermal conductivity is formed between the insulating base 1 and the semiconductor element 3. As a result, heat generated during operation of the semiconductor element 3 is satisfactorily dissipated and removed to the outside via the insulating base 1 and the mold resin 7, so that the semiconductor element 3 is always kept at a low temperature in a normal and stable manner. It can be activated.

A part of the insulating base 1, the semiconductor element 3, and the external lead terminals 2 is covered with a mold resin 7 made of epoxy resin or the like, whereby the semiconductor element 3 is hermetically sealed therein. It will be.

In order to cover the insulating substrate 1, the semiconductor element 3 and a part of the external lead terminal 2 with the molding resin 7, the insulating substrate 1 to which the semiconductor element 3 and the external lead terminal 2 are joined is formed by a predetermined molding die. And inject mold resin such as epoxy resin into the mold, and then
The injected resin is heated at a temperature of about 200 ° C. and 100 kgf / mm.
The method of applying heat and hardening by applying pressure is adopted.

When the insulating substrate 1, the semiconductor element 3 and a part of the external lead terminals 2 are covered with the molding resin 7, first, the molding resin 7a is interposed between the insulating substrate 1 and the semiconductor element 3.
To completely fill the space between the insulating base 1 and the semiconductor element 3 with the molding resin 7a, and then the remaining part of the insulating base 1, the semiconductor element 3 and the external lead terminals 2 is filled with the molding resin 7b. By covering, the air existing between the insulating base 1 and the semiconductor element 3 can be more efficiently discharged to the outside.

Thus, according to the semiconductor device of the present invention, the semiconductor element 3 is mounted on the mounting portion 1a of the insulating base 1 to which the external lead terminals 2 are attached, and each electrode 3a of the semiconductor element 3 is connected to the metallized wiring of the insulating base 1. The layer 4 is mounted so as to be electrically connected to a metal bump 5 made of a metal such as solder. Thereafter, a part of the insulating base 1, the semiconductor element 3, and the external lead terminals 2 is covered with a mold resin 7. Finally, each of the external lead terminals 2 is cut and separated from the frame-shaped connecting band to be electrically independent, and the electrically independent external lead terminals 2 are connected to an external electric circuit, so that a computer or the like can be obtained. Will be used in the information processing device.

[0027]

Since the semiconductor device of the present invention has a through hole in the thickness direction of the semiconductor element mounted on the insulating base, the semiconductor element is mounted on the insulating base via a metal bump, When the insulating base and the semiconductor element are covered with the mold resin, air existing between the insulating base and the semiconductor element is satisfactorily discharged to the outside through a through hole provided in the semiconductor element. Therefore, a large amount of voids having poor thermal conductivity are never formed between the insulating base and the semiconductor element, and as a result, heat generated when the semiconductor element is operated is transferred to the outside via the insulating base and the molding resin. The semiconductor device can be satisfactorily diffused and removed, and the semiconductor element can always be operated normally and stably.

[Brief description of the drawings]

FIG. 1 is a sectional view showing one embodiment of a semiconductor device of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Insulating base 1a ... Mounting part 2 ... External lead terminal 3 ... Semiconductor element 4 ... Metallized wiring layer 5 ... Metal bump 7 ... Mold resin

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Claims (1)

(57) [Claims] An insulating substrate having a mounting portion on which a semiconductor element is mounted at a central portion of an upper surface and a metallized wiring layer extending from the mounting portion to an outer peripheral portion; A semiconductor device comprising: a semiconductor element connected to a wiring layer via a metal bump; and a mold resin covering the insulating base and the semiconductor element, wherein the semiconductor element has a through hole penetrating in a thickness direction thereof. A semiconductor device characterized by being performed.