JP3287965B2 - Package for storing semiconductor elements - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device housing package for housing a semiconductor integrated circuit device such as an LSI.

[0002]

2. Description of the Related Art Conventionally, a semiconductor element housing package for housing a semiconductor element, especially a semiconductor integrated circuit element such as an LSI (Large Scale Integrated Circuit) is generally made of an electrically insulating material such as alumina ceramics. An insulating base having a recess for accommodating a semiconductor integrated circuit element in a substantially central portion thereof, and a plurality of metallized wirings made of a high melting point metal powder such as tungsten or molybdenum led out from the periphery of the recess to the lower surface of the insulating base. Layer, a plurality of connection pads formed on the lower surface of the insulating base, and electrically connected to the metallized wiring layer, and ball-shaped terminals made of solder (eutectic solder) brazed to the connection pads And a lid, and the semiconductor integrated circuit element is adhered and fixed to the bottom surface of the concave portion of the insulating base via an adhesive made of glass, resin, or the like. The electrodes of the integrated circuit device are electrically connected to the metallized wiring layers via bonding wires, and the lid is joined to the upper surface of the insulating base via a sealing material such as glass, resin, or the like. By hermetically sealing the semiconductor integrated circuit element inside the container formed by the above, a semiconductor device as a product is obtained.

In such a semiconductor device, a ball-shaped terminal made of solder brazed to a connection pad on the lower surface of an insulating substrate is placed and abutted on a wiring conductor of an external electric circuit board. It is heated and melted at a temperature of 200 to 250 ° C and mounted on an external electric circuit board by joining ball-shaped terminals to wiring conductors, and at the same time, the semiconductor integrated circuit element housed inside the semiconductor element housing package is Each electrode is electrically connected to an external electric circuit via the metallized wiring layer and the ball-shaped terminals.

[0004]

However, in this conventional package for housing a semiconductor element, the insulating base made of alumina ceramics or the like has a thermal expansion coefficient of about 6.5.
Whereas the external electric circuit board is generally made of glass epoxy resin and has a coefficient of thermal expansion of 2 × 10 ⁻⁶ / ° C.
^-5 / ℃ ~ 4 × 10 ^-5 / ℃, because the two are greatly different, when the semiconductor integrated circuit element is housed inside the semiconductor element housing package, and then mounted on an external electric circuit board, the semiconductor integrated circuit When heat generated during the operation of the element is repeatedly applied to both the insulating base and the external electric circuit board, the heat expansion coefficient is caused between the insulating substrate and the external electric circuit board of the package for housing the semiconductor element due to the difference between the two. When a large thermal stress is generated, this acts on the outer peripheral portion of the connection pad on the lower surface of the insulating base to separate the connection pad from the insulating base. As a result, the semiconductor integrated circuit device accommodated inside the semiconductor device housing package is removed. There was a drawback that each electrode could not be electrically connected to a predetermined external electric circuit for a long period of time.

At the same time, if the semiconductor device housing package is large and the overall weight is heavy, the ball terminals soldered to the connection pads on the lower surface of the insulating base are heated and melted, and the ball terminals are connected to an external electric circuit. When mounting the semiconductor element housing package on an external electric circuit board by bonding it to the wiring conductor of the substrate, the heated and melted ball-shaped terminals are crushed by the weight of the semiconductor element housing package, and the lower surface of the insulating base and the outside are removed. The disadvantage is that it spreads between the electric circuit board and each ball-shaped terminal, making it difficult to accurately electrically connect each ball-shaped terminal to a predetermined external electric circuit, and causing an electric short circuit between adjacent ball-shaped terminals. Had.

[0006]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks, and has as its object to electrically connect each electrode of a semiconductor integrated circuit element housed therein to a predetermined external electric circuit for a long period of time. An object of the present invention is to provide a package for housing a semiconductor element.

[0007]

According to the present invention, there is provided a package for housing a semiconductor element, which is made of an electrically insulating material, has a mounting portion on which an upper surface of a semiconductor element is mounted, an insulating base having a plurality of concave portions on a lower surface, A plurality of metallized wiring layers led out from around the mounting portion on which the semiconductor element of the insulating base is mounted to the bottom of the recess, and formed on the bottom of the recess of the insulating base;
A plurality of connection pads to which a metallized wiring layer is electrically connected; terminals formed of solder attached to the connection pads and having a spherical projection on a lower surface of the insulating base; and formed on a lower surface of the insulating base. And a metal ball attached to the metal pad.

In the semiconductor device housing package of the present invention, the metal ball is formed of copper, and a metal pad to which the metal ball is attached is provided on a mounting portion of the insulating base on which the semiconductor element is mounted. It is characterized in that it is formed in the facing area.

[0009]

According to the package for housing a semiconductor element of the present invention, connection pads are provided on the bottom surface of the concave portion on the lower surface of the insulating base, and terminals made of solder having spherical projections on the lower surface of the insulating base are attached to the connection pads. Therefore, when the semiconductor integrated circuit element is housed inside the semiconductor element housing package and mounted on an external electric circuit board, the heat generated when the semiconductor integrated circuit element is operated generates heat on both the insulating base and the external electric circuit board. Even if a large thermal stress is generated between the insulating base of the package for housing the semiconductor element and the external electric circuit board due to the difference in the thermal expansion coefficient between the two, the thermal stress is insulated from the outer periphery of the connection pad. Dispersed in both of the terminals located in the recess opening area of the base, so that the connection pads do not peel off from the insulating base,
The electrodes of the semiconductor integrated circuit device housed in the semiconductor device housing package can be accurately and electrically connected to a predetermined external electric circuit for a long period of time.

According to the semiconductor device housing package of the present invention, the metal pad is formed on the lower surface of the insulating substrate, and the metal ball is attached to the metal pad. When the semiconductor device housing package is mounted on the external electric circuit board by heating and melting the terminal, and joining the terminal to the wiring conductor of the external electric circuit board, the gap between the insulating base and the external electric circuit board is reduced. A predetermined gap is formed by the metal ball, and the terminal melted by heating is not crushed at all by the heavy weight of the semiconductor element housing package. As a result, each terminal can be accurately connected to a predetermined external electric circuit. , And electrical independence between adjacent terminals can be maintained.

Further, according to the semiconductor device housing package of the present invention, a metal pad is formed in a region of the insulating base opposite to the mounting portion on which the semiconductor integrated circuit device is mounted, and the copper pad is formed on the metal pad. When the semiconductor integrated circuit element generates a large amount of heat during operation, the heat can be satisfactorily dissipated to the external electric circuit board or the atmosphere via the metal ball when the metal ball is attached. As a result, the semiconductor integrated circuit device does not reach a high temperature at which thermal destruction or deterioration of characteristics occurs, and the semiconductor integrated circuit device can be normally and stably operated at a low temperature for a long period of time.

[0012]

BRIEF DESCRIPTION OF THE DRAWINGS FIG.

FIG. 1 shows an embodiment of a package for accommodating a semiconductor element according to the present invention, wherein 1 is an insulating base, and 2 is a lid. The insulating base 1 and the lid 2 constitute a container 4 for housing the semiconductor integrated circuit element 3.

The insulating substrate 1 is provided with a recess 1a in the center of the upper surface thereof for mounting the semiconductor integrated circuit element 3 thereon. The semiconductor integrated circuit element 3 is made of glass, resin or the like on the bottom of the recess 1a. It is bonded and fixed via an adhesive.

The insulating substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, a glass ceramic sintered body and the like. In the case of an aluminum sintered body, an appropriate organic binder, a plasticizer, and a solvent are added to raw material powders such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide to form a slurry, and the slurry is doctor bladed. Green sheet (raw sheet) by adopting the method or calender roll method, and then subjecting the green sheet to appropriate punching and laminating a plurality of these sheets, and firing at a temperature of about 1600 ° C. Produced by

The insulating substrate 1 is a semiconductor integrated circuit device.
A plurality of metallized wiring layers 5 are formed from the periphery to the lower surface of the recess 1a in which 3 is placed and accommodated.

Further, a concave portion 1b is provided on the lower surface of the insulating base 1, and a connection pad 5a to which the metallized wiring layer 5 is electrically connected is formed on the bottom surface of the concave portion 1b.

The metallized wiring layer 5 and the connection pad 5a
Is made of a high melting point metal powder such as tungsten, molybdenum, manganese, etc., and a suitable organic binder, a plasticizer, and a solvent are added to the high melting point metal powder such as tungsten and mixed. By printing and applying a predetermined pattern by a conventionally well-known screen printing method in advance, a predetermined pattern is adhered and formed at a predetermined position of the insulating base 1.

The metallized wiring layer 5 functions to electrically connect each electrode of the semiconductor integrated circuit element 3 to a terminal 7 attached to a connection pad 5a to be described later. Each electrode of the semiconductor integrated circuit element 3 is electrically connected to the located region via a bonding wire 6.

The connection pad 5a electrically connected to the metallized wiring layer 5 functions as a base metal layer when the terminal 7 is attached to the insulating base 1, and the surface of the connection pad 5a has a solder (lead) Terminal 7 made of tin alloy).

The terminal 7 attached to the connection pad 5a
Also has a spherical protrusion 7a on the lower surface of the insulating base 1, and when connecting the terminal 7 to the wiring conductor 8a of the external electric circuit board 8, the connection is easy and reliable. It works.

Since the terminal 7 has a spherical projection 7a on the lower surface of the insulating base 1, the semiconductor integrated circuit element 3 is accommodated in the recess 1a of the insulating base 1, and after mounting on the external electric circuit board 8, The heat generated during the operation of the semiconductor integrated circuit element 3 is repeatedly applied to both the insulating base 1 and the external electric circuit board 8, and is caused by the difference in the thermal expansion coefficient between the insulating base 1 and the external electric circuit board 8. Even if a large thermal stress is generated, the thermal stress is dispersed and reduced to both the outer peripheral portion of the connection pad 5a and the region of the terminal 7 located in the opening region of the concave portion 1b of the insulating base 1, and as a result, the connection due to the thermal stress is reduced. pad
The electrodes 5a of the semiconductor integrated circuit element 3 housed in the container 4 can be electrically connected to a predetermined external electric circuit for a long period of time without the 5a being separated from the insulating base 1.

Further, a metal pad is provided on the lower surface of the insulating base 1.
The metal pad 9 has a metal ball 10 attached thereto.
Is attached.

The metal pad 9 functions as a base metal layer when the metal ball 10 is attached to the lower surface of the insulating base 1,
It is formed of tungsten, molybdenum, manganese, or the like.

The metal pad 9 is formed in the same manner as the metallized wiring layer 5, specifically, a metal paste obtained by adding a suitable organic binder, a plasticizer and a solvent to a refractory metal powder such as tungsten and mixing the same with an insulating substrate. By printing and applying a predetermined pattern on a green sheet to be 1 in advance by a conventionally known screen printing method, the green sheet is adhered and formed in a predetermined pattern at a predetermined position on the lower surface of the insulating substrate 1.

A metal ball 10 is attached to the metal pad 9 via a brazing material such as solder.
Reference numeral 10 denotes a semiconductor element housing package by heating and melting a terminal 7 made of solder attached to a connection pad 5a on the lower surface of the insulating base 1 and joining the terminal 7 to a wiring conductor 8a of an external electric circuit board 8. When mounted on the external electric circuit board 8, it acts to form a predetermined gap between the upper surface of the insulating base 1 and the upper surface of the external electric circuit board 8. Even if the weight of the package is heavy, it will not be crushed at all,
As a result, each terminal 7 can be accurately electrically connected to a predetermined external electric circuit, and the electrical independence between adjacent terminals 7 can be maintained.

Further, the metal pad 9 is formed in a region of the insulating base 1 facing the recess 1a in which the semiconductor integrated circuit element 3 is placed and accommodated, and the metal ball 10 attached to the metal pad 9 is thermally conductive. If the semiconductor integrated circuit element 3 generates a large amount of heat during operation, the heat can be efficiently dissipated to the external electric circuit board 8 and the atmosphere via the metal balls 10 even if the semiconductor integrated circuit element 3 generates a large amount of heat during operation. As a result, the semiconductor integrated circuit device 3 is never heated to a high temperature that would cause thermal destruction or deterioration of its characteristics.
Can be operated normally and stably for a long time at a low temperature. Accordingly, the metal pad 9 is provided in the recess 1a of the insulating base 1 in which the semiconductor integrated circuit element 3 is mounted.
It is preferable that the metal ball 10 attached to the region facing the metal pad 9 and the metal pad 9 is formed of copper having excellent thermal conductivity.

Thus, according to the package for accommodating a semiconductor element of the present invention, the semiconductor integrated circuit element 3 is bonded and fixed to the bottom of the recess 1a of the insulating base 1 with an adhesive, and each electrode of the semiconductor integrated circuit element 3 is metallized. It is electrically connected to the layer 5 via bonding wires 6, and then the lid 2 is joined to the upper surface of the insulating base 1 with a sealing material made of glass, resin, or the like. Container consisting of 4
A semiconductor device as a product is obtained by hermetically sealing the semiconductor integrated circuit element 3 inside.

The semiconductor device is mounted on the external electric circuit board 8 by joining the terminals 7 on the lower surface of the insulating base 1 to the wiring conductors 8 a of the external electric circuit board 8, and is housed inside the container 4 at the same time. In the semiconductor integrated circuit device 3, each electrode has a bonding wire 6, a metallized wiring layer 5
, The external electric circuit board 8 via the connection pad 5a and the terminal 7
Is electrically connected to the wiring conductor 8a.

[0030]

According to the semiconductor device housing package of the present invention, connection pads are provided on the bottom surface of the concave portion on the lower surface of the insulating base, and the connection pads are provided with terminals made of solder having spherical projections on the lower surface of the insulating base. When the semiconductor integrated circuit device is housed inside the semiconductor device housing package and mounted on an external electric circuit board,
The heat generated during the operation of the semiconductor integrated circuit device is repeatedly applied to both the insulating substrate and the external electric circuit board, resulting from the difference in the coefficient of thermal expansion between the insulating substrate and the external electric circuit board of the package for housing the semiconductor element. Even if a large thermal stress occurs, the thermal stress is distributed to both the outer peripheral portion of the connection pad and the terminal located in the concave opening region of the insulating base,
As a result, the connection pads do not peel off from the insulating base, and each electrode of the semiconductor integrated circuit element housed in the semiconductor element housing package can be accurately and electrically connected to a predetermined external electric circuit for a long period of time. It becomes possible.

According to the semiconductor device housing package of the present invention, the metal pad is formed on the lower surface of the insulating substrate and the metal ball is attached to the metal pad. When the semiconductor device housing package is mounted on the external electric circuit board by heating and melting the terminal, and joining the terminal to the wiring conductor of the external electric circuit board, the gap between the insulating base and the external electric circuit board is reduced. A predetermined gap is formed by the metal ball, and the terminal melted by heating is not crushed at all by the heavy weight of the semiconductor element housing package. As a result, each terminal can be accurately connected to a predetermined external electric circuit. , And electrical independence between adjacent terminals can be maintained.

Further, according to the package for accommodating a semiconductor element of the present invention, a metal pad is formed in a region of the insulating substrate facing the mounting portion on which the semiconductor integrated circuit element is mounted, and the metal pad is formed on the metal pad. When the semiconductor integrated circuit element generates a large amount of heat during operation, the heat can be satisfactorily dissipated to the external electric circuit board or the atmosphere via the metal ball when the metal ball is attached. As a result, the semiconductor integrated circuit device does not reach a high temperature at which thermal destruction or deterioration of characteristics occurs, and the semiconductor integrated circuit device can be normally and stably operated at a low temperature for a long period of time.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing one embodiment of a semiconductor element storage package according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Insulating base 2 ... Lid 3 ... Semiconductor integrated circuit element 5 ... Metallized wiring layer 7 ... Terminal 7a ... ... Spherical protruding portion of terminal 8 ... External electric circuit board 8a ... Wiring conductor of external electric circuit board 9 ... Metal pad 10 ... Metal ball

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 23/00-23/30 H01L 21/56 H01L 21/60

Claims (2)

(57) [Claims] An insulating base having an upper surface on which a semiconductor element is mounted, an insulating base having a plurality of concave portions on a lower surface, and a mounting part on which the semiconductor element of the insulating base is mounted. A plurality of metallized wiring layers extending from the periphery to the bottom surface of the concave portion, a plurality of connection pads formed on the bottom surface of the concave portion of the insulating base, and electrically connected to the metallized wiring layer; A semiconductor device package comprising: a terminal made of solder having a spherical projection on the lower surface of the insulating base; a metal pad formed on the lower surface of the insulating base; and a metal ball attached to the metal pad. 2. The semiconductor device according to claim 1, wherein the metal ball is formed of copper, and a metal pad to which the metal ball is attached is formed in a region of the insulating base opposite to the mounting portion on which the semiconductor element is mounted. The package for accommodating a semiconductor element according to claim 1.