JP3241338B2 - 半導体発光装置 - Google Patents

半導体発光装置

Info

Publication number
JP3241338B2
JP3241338B2 JP1753599A JP1753599A JP3241338B2 JP 3241338 B2 JP3241338 B2 JP 3241338B2 JP 1753599 A JP1753599 A JP 1753599A JP 1753599 A JP1753599 A JP 1753599A JP 3241338 B2 JP3241338 B2 JP 3241338B2
Authority
JP
Japan
Prior art keywords
light emitting
semiconductor light
epoxy resin
semiconductor
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1753599A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11274571A (ja
Inventor
雅史 蔵本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=11800411&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP3241338(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP1753599A priority Critical patent/JP3241338B2/ja
Publication of JPH11274571A publication Critical patent/JPH11274571A/ja
Application granted granted Critical
Publication of JP3241338B2 publication Critical patent/JP3241338B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP1753599A 1998-01-26 1999-01-26 半導体発光装置 Expired - Lifetime JP3241338B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1753599A JP3241338B2 (ja) 1998-01-26 1999-01-26 半導体発光装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1226098 1998-01-26
JP10-12260 1998-01-26
JP1753599A JP3241338B2 (ja) 1998-01-26 1999-01-26 半導体発光装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2000072414A Division JP4055322B2 (ja) 1998-01-26 2000-03-15 半導体発光装置

Publications (2)

Publication Number Publication Date
JPH11274571A JPH11274571A (ja) 1999-10-08
JP3241338B2 true JP3241338B2 (ja) 2001-12-25

Family

ID=11800411

Family Applications (2)

Application Number Title Priority Date Filing Date
JP1753599A Expired - Lifetime JP3241338B2 (ja) 1998-01-26 1999-01-26 半導体発光装置
JP2000072414A Expired - Fee Related JP4055322B2 (ja) 1998-01-26 2000-03-15 半導体発光装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2000072414A Expired - Fee Related JP4055322B2 (ja) 1998-01-26 2000-03-15 半導体発光装置

Country Status (1)

Country Link
JP (2) JP3241338B2 (US07585860-20090908-C00150.png)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7276562B2 (en) 2004-04-30 2007-10-02 Shin-Etsu Chemical Co., Ltd. Epoxy-silicone mixed resin composition and light-emitting semiconductor device
US7498085B2 (en) 2003-11-20 2009-03-03 Shin-Etsu Chemical Co., Ltd. Epoxy/silicone mixed resin composition and light-emitting semiconductor device
US7807736B2 (en) 2006-07-18 2010-10-05 Shin-Etsu Chemical Co., Ltd. Semiconductor device encapsulated by silicone resin composition, and silicone resin tablet for encapsulating semiconductor device
JP2011009346A (ja) * 2009-06-24 2011-01-13 Shin-Etsu Chemical Co Ltd 光半導体装置
EP2336230A1 (en) 2009-12-15 2011-06-22 Shin-Etsu Chemical Co., Ltd. Resin composition for encapsulating optical semiconductor element and optical semiconductor device
EP2565949A2 (en) 2011-09-02 2013-03-06 Shin-Etsu Chemical Co., Ltd. Optical semiconductor device
US8710158B2 (en) 2010-04-07 2014-04-29 Shin-Etsu Chemical Co., Ltd. Epoxy composition for encapsulating an optical semiconductor element
KR20170061655A (ko) 2010-06-08 2017-06-05 신에쓰 가가꾸 고교 가부시끼가이샤 광반도체 소자 밀봉용 수지 조성물 및 발광 장치

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JP2000208822A (ja) * 1999-01-11 2000-07-28 Matsushita Electronics Industry Corp 半導体発光装置
JP2001196642A (ja) * 2000-01-11 2001-07-19 Toyoda Gosei Co Ltd 発光装置
JP2002133925A (ja) * 2000-10-25 2002-05-10 Sanken Electric Co Ltd 蛍光カバー及び半導体発光装置
JP2002226551A (ja) * 2001-01-31 2002-08-14 Matsushita Electric Ind Co Ltd 発光ダイオード
US6730942B2 (en) 2002-01-24 2004-05-04 Toyoda Gosei Co., Ltd. Light emitting apparatus
KR100632660B1 (ko) * 2002-05-29 2006-10-11 서울반도체 주식회사 핑크 칩 발광 다이오드 및 그 제작 방법
US10340424B2 (en) 2002-08-30 2019-07-02 GE Lighting Solutions, LLC Light emitting diode component
JP2006500767A (ja) 2002-09-19 2006-01-05 クリー　インコーポレイテッド 発光ダイオード及びその製造方法
TW200427111A (en) 2003-03-12 2004-12-01 Shinetsu Chemical Co Material for coating/protecting light-emitting semiconductor and the light-emitting semiconductor device
TWI373150B (en) 2003-07-09 2012-09-21 Shinetsu Chemical Co Silicone rubber composition, light-emitting semiconductor embedding/protecting material and light-emitting semiconductor device
JP4586967B2 (ja) * 2003-07-09 2010-11-24 信越化学工業株式会社 発光半導体被覆保護材及び発光半導体装置
US20050104072A1 (en) 2003-08-14 2005-05-19 Slater David B.Jr. Localized annealing of metal-silicon carbide ohmic contacts and devices so formed
US7183587B2 (en) 2003-09-09 2007-02-27 Cree, Inc. Solid metal block mounting substrates for semiconductor light emitting devices
US7029935B2 (en) 2003-09-09 2006-04-18 Cree, Inc. Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same
US20060097385A1 (en) 2004-10-25 2006-05-11 Negley Gerald H Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same
US7322732B2 (en) 2004-12-23 2008-01-29 Cree, Inc. Light emitting diode arrays for direct backlighting of liquid crystal displays
KR20090009772A (ko) 2005-12-22 2009-01-23 크리 엘이디 라이팅 솔루션즈, 인크. 조명 장치
US8441179B2 (en) 2006-01-20 2013-05-14 Cree, Inc. Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources
US8264138B2 (en) 2006-01-20 2012-09-11 Cree, Inc. Shifting spectral content in solid state light emitters by spatially separating lumiphor films
WO2007139781A2 (en) 2006-05-23 2007-12-06 Cree Led Lighting Solutions, Inc. Lighting device
US8593040B2 (en) 2009-10-02 2013-11-26 Ge Lighting Solutions Llc LED lamp with surface area enhancing fins
CN102712756B (zh) 2010-01-25 2017-05-03 Lg化学株式会社 有机硅树脂
WO2011090361A2 (ko) 2010-01-25 2011-07-28 (주)Lg화학 경화성 조성물
DE202011110489U1 (de) 2010-01-25 2014-04-17 Lg Chem, Ltd. Härtbare Zusammensetzung
US8772817B2 (en) 2010-12-22 2014-07-08 Cree, Inc. Electronic device submounts including substrates with thermally conductive vias
KR101547383B1 (ko) 2011-01-06 2015-08-25 주식회사 엘지화학 경화성 조성물
KR101539486B1 (ko) 2011-01-06 2015-07-24 주식회사 엘지화학 경화성 조성물
EP2662412B1 (en) 2011-01-06 2018-07-11 LG Chem, Ltd. Curable composition
WO2012093907A2 (ko) 2011-01-06 2012-07-12 주식회사 엘지화학 경화성 조성물
EP2706095B1 (en) 2011-05-04 2021-03-03 LG Chem, Ltd. Curable composition
EP2722366B1 (en) 2011-06-17 2023-01-04 LG Chem, Ltd. Curable composition
JP5907262B2 (ja) 2011-07-22 2016-04-26 エルジー・ケム・リミテッド 硬化性組成物
EP2784123B1 (en) 2011-11-25 2019-09-04 LG Chem, Ltd. Curable composition
TWI473842B (zh) 2011-11-25 2015-02-21 Lg Chemical Ltd 可固化之組成物
TWI473839B (zh) 2011-11-25 2015-02-21 Lg Chemical Ltd 可固化組成物
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EP2784124B1 (en) 2011-11-25 2016-06-29 LG Chem, Ltd. Curable composition
TWI480335B (zh) 2011-11-25 2015-04-11 Lg Chemical Ltd 可固化組成物
WO2013077703A1 (ko) 2011-11-25 2013-05-30 주식회사 엘지화학 경화성 조성물
US9500355B2 (en) 2012-05-04 2016-11-22 GE Lighting Solutions, LLC Lamp with light emitting elements surrounding active cooling device
KR101560047B1 (ko) 2012-07-27 2015-10-15 주식회사 엘지화학 경화성 조성물
EP2878636B1 (en) 2012-07-27 2016-12-28 LG Chem, Ltd. Curable composition
KR101560046B1 (ko) 2012-07-27 2015-10-15 주식회사 엘지화학 경화성 조성물
EP2878637B1 (en) 2012-07-27 2018-09-26 LG Chem, Ltd. Hardening composition
EP2878638B1 (en) 2012-07-27 2019-05-22 LG Chem, Ltd. Hardening composition
TWI519604B (zh) 2012-07-27 2016-02-01 Ｌｇ化學股份有限公司 可固化組成物
CN104508048B (zh) 2012-07-27 2017-08-25 Lg化学株式会社 可固化组合物
JP6237880B2 (ja) 2013-04-04 2017-11-29 エルジー・ケム・リミテッド 硬化性組成物
WO2014163439A1 (ko) 2013-04-04 2014-10-09 주식회사 엘지화학 경화성 조성물
JP6237881B2 (ja) 2013-04-04 2017-11-29 エルジー・ケム・リミテッド 硬化性組成物
CN105102541B (zh) 2013-04-04 2017-07-11 株式会社Lg化学 可固化组合物
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TWI558772B (zh) 2014-01-28 2016-11-21 Ｌｇ化學股份有限公司 固化產物
JP2016111210A (ja) * 2014-12-08 2016-06-20 信越化学工業株式会社 ダイボンド材を用いた導電接続方法及び光半導体装置
KR101880211B1 (ko) 2015-12-30 2018-07-20 주식회사 엘지화학 경화성 조성물
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Ｐｒｏｃ．ＳＰＩＥ Ｉｎｔ．Ｓｏｃ．Ｏｐｔ．Ｅｎｇ．Ｖｏｌ．３００２（１９９７）ｐ．２６−３５

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7498085B2 (en) 2003-11-20 2009-03-03 Shin-Etsu Chemical Co., Ltd. Epoxy/silicone mixed resin composition and light-emitting semiconductor device
US7276562B2 (en) 2004-04-30 2007-10-02 Shin-Etsu Chemical Co., Ltd. Epoxy-silicone mixed resin composition and light-emitting semiconductor device
US7807736B2 (en) 2006-07-18 2010-10-05 Shin-Etsu Chemical Co., Ltd. Semiconductor device encapsulated by silicone resin composition, and silicone resin tablet for encapsulating semiconductor device
JP2011009346A (ja) * 2009-06-24 2011-01-13 Shin-Etsu Chemical Co Ltd 光半導体装置
EP2336230A1 (en) 2009-12-15 2011-06-22 Shin-Etsu Chemical Co., Ltd. Resin composition for encapsulating optical semiconductor element and optical semiconductor device
US8710158B2 (en) 2010-04-07 2014-04-29 Shin-Etsu Chemical Co., Ltd. Epoxy composition for encapsulating an optical semiconductor element
KR20170061655A (ko) 2010-06-08 2017-06-05 신에쓰 가가꾸 고교 가부시끼가이샤 광반도체 소자 밀봉용 수지 조성물 및 발광 장치
EP2565949A2 (en) 2011-09-02 2013-03-06 Shin-Etsu Chemical Co., Ltd. Optical semiconductor device
US9306133B2 (en) 2011-09-02 2016-04-05 Shin-Etsu Chemical Co., Ltd. Optical semiconductor device

Also Published As

Publication number Publication date
JP2000286458A (ja) 2000-10-13
JPH11274571A (ja) 1999-10-08
JP4055322B2 (ja) 2008-03-05

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