JP3190759B2 - 多孔部品の製造方法 - Google Patents

多孔部品の製造方法

Info

Publication number
JP3190759B2
JP3190759B2 JP03119893A JP3119893A JP3190759B2 JP 3190759 B2 JP3190759 B2 JP 3190759B2 JP 03119893 A JP03119893 A JP 03119893A JP 3119893 A JP3119893 A JP 3119893A JP 3190759 B2 JP3190759 B2 JP 3190759B2
Authority
JP
Japan
Prior art keywords
electrolyte
substrate
etching
plate
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP03119893A
Other languages
English (en)
Japanese (ja)
Other versions
JPH05315316A (ja
Inventor
レーマン フオルカー
ライジンガー ハンス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPH05315316A publication Critical patent/JPH05315316A/ja
Application granted granted Critical
Publication of JP3190759B2 publication Critical patent/JP3190759B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/204—Filters in which spectral selection is performed by means of a conductive grid or array, e.g. frequency selective surfaces
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/61—Electrolytic etching
    • H10P50/613—Electrolytic etching of Group IV materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Weting (AREA)
  • Optical Filters (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
JP03119893A 1992-01-29 1993-01-27 多孔部品の製造方法 Expired - Lifetime JP3190759B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4202454.4 1992-01-29
DE4202454A DE4202454C1 (enExample) 1992-01-29 1992-01-29

Publications (2)

Publication Number Publication Date
JPH05315316A JPH05315316A (ja) 1993-11-26
JP3190759B2 true JP3190759B2 (ja) 2001-07-23

Family

ID=6450503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP03119893A Expired - Lifetime JP3190759B2 (ja) 1992-01-29 1993-01-27 多孔部品の製造方法

Country Status (4)

Country Link
US (1) US5262021A (enExample)
EP (1) EP0553465B1 (enExample)
JP (1) JP3190759B2 (enExample)
DE (2) DE4202454C1 (enExample)

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EP0666595B1 (de) * 1994-02-07 1998-08-19 Siemens Aktiengesellschaft Verfahren zur Herstellung einer kubisch integrierten Schaltungsanordnung
US5770076A (en) * 1994-03-07 1998-06-23 The Regents Of The University Of California Micromachined capsules having porous membranes and bulk supports
US5798042A (en) * 1994-03-07 1998-08-25 Regents Of The University Of California Microfabricated filter with specially constructed channel walls, and containment well and capsule constructed with such filters
US5985164A (en) * 1994-03-07 1999-11-16 Regents Of The University Of California Method for forming a filter
US5660680A (en) * 1994-03-07 1997-08-26 The Regents Of The University Of California Method for fabrication of high vertical aspect ratio thin film structures
US5651900A (en) * 1994-03-07 1997-07-29 The Regents Of The University Of California Microfabricated particle filter
US5985328A (en) * 1994-03-07 1999-11-16 Regents Of The University Of California Micromachined porous membranes with bulk support
US5645684A (en) * 1994-03-07 1997-07-08 The Regents Of The University Of California Multilayer high vertical aspect ratio thin film structures
DE19507547C2 (de) * 1995-03-03 1997-12-11 Siemens Ag Verfahren zur Montage von Chips
DE19526734A1 (de) * 1995-07-21 1997-01-23 Siemens Ag Optische Struktur und Verfahren zu deren Herstellung
CA2179947A1 (en) * 1995-09-25 1997-03-26 Michael Gunnar Johnson Mold assembly for forming apertures in a molded body
US6045677A (en) * 1996-02-28 2000-04-04 Nanosciences Corporation Microporous microchannel plates and method of manufacturing same
GB9610878D0 (en) * 1996-05-24 1996-07-31 Philips Electronics Nv Electronic device manufacture
DE938597T1 (de) 1996-09-06 2000-03-09 Obducat Ab Verfahren für das anisotrope ätzen von strukturen in leitende materialien
US5882496A (en) * 1997-02-27 1999-03-16 The Regents Of The University Of California Porous silicon structures with high surface area/specific pore size
US5938923A (en) * 1997-04-15 1999-08-17 The Regents Of The University Of California Microfabricated filter and capsule using a substrate sandwich
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US6121552A (en) 1997-06-13 2000-09-19 The Regents Of The University Of Caliofornia Microfabricated high aspect ratio device with an electrical isolation trench
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WO1999016123A1 (de) * 1997-09-22 1999-04-01 Siemens Aktiengesellschaft Verfahren zur herstellung einer dotierten schicht in einem aus einem halbleiter bestehenden erzeugnis, sowie entsprechendes erzeugnis
JP2002503825A (ja) * 1998-02-10 2002-02-05 インフィネオン テクノロジース アクチエンゲゼルシャフト 光学構造体および光学構造体を製造するための方法
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KR20010041741A (ko) * 1999-01-13 2001-05-25 다니구찌 이찌로오, 기타오카 다카시 관성력센서 및 관성력 센서의 제조방법
DE19919903A1 (de) * 1999-04-30 2000-11-02 Nft Nano Filtertechnik Gmbh Verfahren zur Herstellung eines Filters
US6954613B1 (en) * 1999-09-10 2005-10-11 Virtual Geosatellite Holdings, Inc. Fixed satellite constellation system employing non-geostationary satellites in sub-geosynchronous elliptical orbits with common ground tracks
US6720105B2 (en) 1999-11-17 2004-04-13 Neah Power Systems, Inc. Metallic blocking layers integrally associated with fuel cell electrode structures and fuel cell electrode stack assemblies
US6852443B1 (en) * 1999-11-17 2005-02-08 Neah Power Systems, Inc. Fuel cells having silicon substrates and/or sol-gel derived support structures
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JP2003515236A (ja) * 1999-11-17 2003-04-22 ネア・パワー・システムズ・インコーポレイテッド シリコン基板および／またはゾルゲル法で誘導された担体構造を有する燃料電池
EP1132952B1 (en) * 2000-03-10 2016-11-23 Imec Method for the formation and lift-off of porous silicon layers
US6768590B2 (en) * 2000-05-19 2004-07-27 Shipley Company, L.L.C. Method of fabricating optical filters
US20020115198A1 (en) * 2000-09-20 2002-08-22 Nerenberg Michael I. Microfabricated ultrasound array for use as resonant sensors
DE10055872B4 (de) * 2000-11-10 2004-02-05 Robert Bosch Gmbh Verfahren zur Herstellung einer porösen Struktur für ein Sieb oder einen Filter und poröse Struktur für ein Sieb oder einen Filter
US6677070B2 (en) * 2001-04-19 2004-01-13 Hewlett-Packard Development Company, L.P. Hybrid thin film/thick film solid oxide fuel cell and method of manufacturing the same
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DE10217569A1 (de) * 2002-04-19 2003-11-13 Infineon Technologies Ag Vorrichtung auf Basis von partiell oxidiertem porösen Silizium
US7031566B2 (en) * 2002-06-04 2006-04-18 Lake Shore Cryotronics, Inc. Spectral filter for green and shorter wavelengths
US20060105912A1 (en) * 2002-08-23 2006-05-18 Johannes Konle Microstructured catalyst body and method for production thereof
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GB2395059B (en) * 2002-11-05 2005-03-16 Imp College Innovations Ltd Structured silicon anode
US7357877B2 (en) * 2002-11-18 2008-04-15 Koninklijke Philips Electronics N.V. Dispersion of nanowires of semiconductor material
DE10259366A1 (de) * 2002-12-18 2004-07-08 Siemens Ag Verfahren zur Nachbearbeitung eines Durchgangslochs eines Bauteils
US20050058414A1 (en) * 2003-08-21 2005-03-17 Lake Shore Cryotronics, Inc. Porous retroreflection suppression plates, optical isolators and method of fabricating same
US7165647B2 (en) * 2003-12-18 2007-01-23 Pei-Chau Lee Mechanical acoustic filter by erosion etching
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US7108813B2 (en) * 2004-03-30 2006-09-19 The Board Of Trustees Of The Leland Stanford Junior University Gas/ion species selective membrane supported by multi-stage nano-hole array metal structure
TW200620451A (en) * 2004-11-09 2006-06-16 Univ Osaka Method for forming hole in crystal substrate, and crystal substrate having hole formed by the method
US20060115919A1 (en) * 2004-11-30 2006-06-01 Gogoi Bishnu P Method of making a microelectromechanical (MEM) device using porous material as a sacrificial layer
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US20060207890A1 (en) 2005-03-15 2006-09-21 Norbert Staud Electrochemical etching
US20060256428A1 (en) * 2005-05-16 2006-11-16 Lake Shore Cryotronics, Inc. Long wave pass infrared filter based on porous semiconductor material and the method of manufacturing the same
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GB0601319D0 (en) * 2006-01-23 2006-03-01 Imp Innovations Ltd A method of fabricating pillars composed of silicon-based material
GB0601318D0 (en) 2006-01-23 2006-03-01 Imp Innovations Ltd Method of etching a silicon-based material
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DE102009042321A1 (de) 2009-09-21 2011-03-31 Martin-Luther-Universität Halle-Wittenberg Poren aufweisender n-dotierter Siliziumkörper sowie Verfahren zu seiner Herstellung
KR20130007557A (ko) * 2010-01-27 2013-01-18 예일 유니버시티 ＧａＮ 소자의 전도도 기반 선택적 에칭 및 그의 응용
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WO2014004261A1 (en) 2012-06-28 2014-01-03 Yale University Lateral electrochemical etching of iii-nitride materials for microfabrication
US11095096B2 (en) 2014-04-16 2021-08-17 Yale University Method for a GaN vertical microcavity surface emitting laser (VCSEL)
EP3201952B1 (en) 2014-09-30 2023-03-29 Yale University A method for gan vertical microcavity surface emitting laser
US11018231B2 (en) 2014-12-01 2021-05-25 Yale University Method to make buried, highly conductive p-type III-nitride layers
CA3162752A1 (en) 2015-04-09 2016-10-13 Angle Europe Limited Method for performing a biological assay
US10554017B2 (en) 2015-05-19 2020-02-04 Yale University Method and device concerning III-nitride edge emitting laser diode of high confinement factor with lattice matched cladding layer
CN114787964A (zh) 2019-10-31 2022-07-22 耶鲁大学 多孔iii族氮化物以及其使用和制造方法

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FR2339953A1 (fr) * 1976-01-29 1977-08-26 Anvar Procede d'obtention de films minces en silicium de type n, de diodes a barriere de surface comportant de tels films, et detecteurs de particules comportant de telles diodes
DE3879771D1 (de) * 1987-05-27 1993-05-06 Siemens Ag Aetzverfahren zum erzeugen von lochoeffnungen oder graeben in n-dotiertem silizium.

Also Published As

Publication number Publication date
EP0553465A1 (de) 1993-08-04
DE59202728D1 (de) 1995-08-03
EP0553465B1 (de) 1995-06-28
US5262021A (en) 1993-11-16
DE4202454C1 (enExample) 1993-07-29
JPH05315316A (ja) 1993-11-26

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