JP3174417B2 - 酸化ケイ素膜の形成方法 - Google Patents

酸化ケイ素膜の形成方法

Info

Publication number
JP3174417B2
JP3174417B2 JP35340592A JP35340592A JP3174417B2 JP 3174417 B2 JP3174417 B2 JP 3174417B2 JP 35340592 A JP35340592 A JP 35340592A JP 35340592 A JP35340592 A JP 35340592A JP 3174417 B2 JP3174417 B2 JP 3174417B2
Authority
JP
Japan
Prior art keywords
silicon oxide
volume
silsesquioxane resin
silicon
hydrogen silsesquioxane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP35340592A
Other languages
English (en)
Japanese (ja)
Other versions
JPH06181203A (ja
Inventor
基 佐々木
隆司 中村
勝利 峰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=18430620&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP3174417(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Priority to JP35340592A priority Critical patent/JP3174417B2/ja
Priority to US08/146,380 priority patent/US5370903A/en
Priority to TW082109435A priority patent/TW232082B/zh
Priority to EP93119493A priority patent/EP0606580B1/en
Priority to DE69301229T priority patent/DE69301229T2/de
Priority to KR1019930027162A priority patent/KR100282685B1/ko
Publication of JPH06181203A publication Critical patent/JPH06181203A/ja
Publication of JP3174417B2 publication Critical patent/JP3174417B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/25—Oxides by deposition from the liquid phase
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
    • C03C17/30—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with silicon-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
    • C04B41/5035—Silica
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/87—Ceramics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1275—Process of deposition of the inorganic material performed under inert atmosphere
    • H10P14/6529—
    • H10P14/6925—
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/213—SiO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/32—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1212—Zeolites, glasses
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/122—Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes
    • H10P14/6342—
    • H10P14/6686—
    • H10P14/69215—
    • H10P14/6922—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Thermal Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Paints Or Removers (AREA)
JP35340592A 1992-12-11 1992-12-11 酸化ケイ素膜の形成方法 Expired - Lifetime JP3174417B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP35340592A JP3174417B2 (ja) 1992-12-11 1992-12-11 酸化ケイ素膜の形成方法
US08/146,380 US5370903A (en) 1992-12-11 1993-10-29 Method for the formation of a silicon oxide film
TW082109435A TW232082B (cg-RX-API-DMAC10.html) 1992-12-11 1993-11-10
DE69301229T DE69301229T2 (de) 1992-12-11 1993-12-03 Verfahren zur Herstellung einer Siliciumdioxidschicht
EP93119493A EP0606580B1 (en) 1992-12-11 1993-12-03 Method for the formation of a silicon oxide film
KR1019930027162A KR100282685B1 (ko) 1992-12-11 1993-12-10 산화 실리콘막 형성방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35340592A JP3174417B2 (ja) 1992-12-11 1992-12-11 酸化ケイ素膜の形成方法

Publications (2)

Publication Number Publication Date
JPH06181203A JPH06181203A (ja) 1994-06-28
JP3174417B2 true JP3174417B2 (ja) 2001-06-11

Family

ID=18430620

Family Applications (1)

Application Number Title Priority Date Filing Date
JP35340592A Expired - Lifetime JP3174417B2 (ja) 1992-12-11 1992-12-11 酸化ケイ素膜の形成方法

Country Status (6)

Country Link
US (1) US5370903A (cg-RX-API-DMAC10.html)
EP (1) EP0606580B1 (cg-RX-API-DMAC10.html)
JP (1) JP3174417B2 (cg-RX-API-DMAC10.html)
KR (1) KR100282685B1 (cg-RX-API-DMAC10.html)
DE (1) DE69301229T2 (cg-RX-API-DMAC10.html)
TW (1) TW232082B (cg-RX-API-DMAC10.html)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3418458B2 (ja) * 1993-08-31 2003-06-23 富士通株式会社 半導体装置の製造方法
WO1995018190A1 (fr) * 1993-12-27 1995-07-06 Kawasaki Steel Corporation Film isolant pour dispositifs a semi-conducteurs, fluide de revetement utilise pour former le film et procede de production dudit film
US5530293A (en) 1994-11-28 1996-06-25 International Business Machines Corporation Carbon-free hydrogen silsesquioxane with dielectric constant less than 3.2 annealed in hydrogen for integrated circuits
JP3149739B2 (ja) * 1995-07-14 2001-03-26 ヤマハ株式会社 多層配線形成法
JP3070450B2 (ja) * 1995-07-14 2000-07-31 ヤマハ株式会社 多層配線形成法
US6319551B1 (en) * 1995-12-19 2001-11-20 William M. Risen, Jr. Methods and compositions for forming silica, germanosilicate and metal silicate films, patterns and multilayers
US5707683A (en) * 1996-02-22 1998-01-13 Dow Corning Corporation Electronic coating composition method of coating an electronic substrate, composition and article
JP3123449B2 (ja) * 1996-11-01 2001-01-09 ヤマハ株式会社 多層配線形成法
JP3082688B2 (ja) * 1996-11-05 2000-08-28 ヤマハ株式会社 配線形成法
TW367273B (en) * 1996-12-20 1999-08-21 Dow Corning Method of producing low dielectric ceramic-like materials
JP3225872B2 (ja) * 1996-12-24 2001-11-05 ヤマハ株式会社 酸化シリコン膜形成法
JPH10247686A (ja) * 1996-12-30 1998-09-14 Yamaha Corp 多層配線形成法
US5707681A (en) * 1997-02-07 1998-01-13 Dow Corning Corporation Method of producing coatings on electronic substrates
US6218497B1 (en) 1997-04-21 2001-04-17 Alliedsignal Inc. Organohydridosiloxane resins with low organic content
US6143855A (en) * 1997-04-21 2000-11-07 Alliedsignal Inc. Organohydridosiloxane resins with high organic content
US6743856B1 (en) 1997-04-21 2004-06-01 Honeywell International Inc. Synthesis of siloxane resins
US6015457A (en) * 1997-04-21 2000-01-18 Alliedsignal Inc. Stable inorganic polymers
US5866197A (en) * 1997-06-06 1999-02-02 Dow Corning Corporation Method for producing thick crack-free coating from hydrogen silsequioxane resin
TW392288B (en) 1997-06-06 2000-06-01 Dow Corning Thermally stable dielectric coatings
US6018002A (en) * 1998-02-06 2000-01-25 Dow Corning Corporation Photoluminescent material from hydrogen silsesquioxane resin
US6177199B1 (en) 1999-01-07 2001-01-23 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with low organic content
US6218020B1 (en) 1999-01-07 2001-04-17 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with high organic content
US5906859A (en) * 1998-07-10 1999-05-25 Dow Corning Corporation Method for producing low dielectric coatings from hydrogen silsequioxane resin
JP2000286254A (ja) * 1999-03-31 2000-10-13 Hitachi Ltd 半導体集積回路装置およびその製造方法
US6472076B1 (en) 1999-10-18 2002-10-29 Honeywell International Inc. Deposition of organosilsesquioxane films
US6440550B1 (en) * 1999-10-18 2002-08-27 Honeywell International Inc. Deposition of fluorosilsesquioxane films
JP2001291427A (ja) * 2000-04-06 2001-10-19 Dow Corning Toray Silicone Co Ltd 電気絶縁性薄膜形成性樹脂組成物、および電気絶縁性薄膜の形成方法
KR20040011494A (ko) * 2001-04-06 2004-02-05 허니웰 인터내셔날 인코포레이티드 저유전율 재료 및 이의 제조 방법
KR20020095103A (ko) 2001-06-11 2002-12-20 제이에스알 가부시끼가이샤 실리카막의 형성 방법, 실리카막, 절연막 및 반도체 장치
US20040247896A1 (en) * 2001-12-31 2004-12-09 Paul Apen Organic compositions
SE521977C2 (sv) * 2002-06-20 2003-12-23 Mobile Media Group Stockholm A Metod och apparat för att formatera en webbtjänst
EP1475668A1 (en) * 2003-05-09 2004-11-10 ASML Netherlands B.V. Method of preparing components for a lithographic apparatus
US20050215713A1 (en) * 2004-03-26 2005-09-29 Hessell Edward T Method of producing a crosslinked coating in the manufacture of integrated circuits
US7439111B2 (en) * 2004-09-29 2008-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7803668B2 (en) * 2006-02-24 2010-09-28 Stmicroelectronics (Crolles 2) Sas Transistor and fabrication process
JP5313478B2 (ja) * 2007-10-05 2013-10-09 東レ・ダウコーニング株式会社 セラミック状酸化ケイ素系被膜の形成方法、セラミック状酸化ケイ素系被膜を有する無機質基材の製造方法、セラミック状酸化ケイ素系被膜形成剤および半導体装置
FR2960233B1 (fr) 2010-05-19 2012-08-10 Eurokera Preparation d'un article en un verre ou en une vitroceramique avec revetement ameliore et ledit article
WO2013083129A1 (en) * 2011-12-08 2013-06-13 Inmold Biosystems A/S Spin-on-glass assisted polishing of rough substrates
CN108977769A (zh) * 2017-06-05 2018-12-11 深圳富泰宏精密工业有限公司 壳体及该壳体的制作方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2977882B2 (ja) 1989-10-18 1999-11-15 ダウ コーニング コーポレーション 不活性ガス雰囲気下の気密基板コーティング法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615272A (en) * 1968-11-04 1971-10-26 Dow Corning Condensed soluble hydrogensilsesquioxane resin
JPS6086017A (ja) * 1983-10-17 1985-05-15 Fujitsu Ltd ポリハイドロジエンシルセスキオキサンの製法
JPS60124943A (ja) * 1983-12-12 1985-07-04 Fujitsu Ltd 酸化珪素膜の形成方法
US4756977A (en) * 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
CA2010335A1 (en) * 1989-03-09 1990-09-09 Ronald H. Baney Method for protective coating superconductors
US5118530A (en) * 1990-11-28 1992-06-02 Dow Corning Corporation Use of hydrogen silsesquioxane resin fractions as coating materials
US5145723A (en) * 1991-06-05 1992-09-08 Dow Corning Corporation Process for coating a substrate with silica
CA2088107A1 (en) * 1992-02-24 1993-08-25 Ronald Howard Baney Silicone infiltrated ceramic nanocomposite coatings

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2977882B2 (ja) 1989-10-18 1999-11-15 ダウ コーニング コーポレーション 不活性ガス雰囲気下の気密基板コーティング法

Also Published As

Publication number Publication date
KR100282685B1 (ko) 2001-03-02
DE69301229T2 (de) 1996-08-08
US5370903A (en) 1994-12-06
KR940014264A (ko) 1994-07-18
JPH06181203A (ja) 1994-06-28
TW232082B (cg-RX-API-DMAC10.html) 1994-10-11
EP0606580A1 (en) 1994-07-20
EP0606580B1 (en) 1996-01-03
DE69301229D1 (de) 1996-02-15

Similar Documents

Publication Publication Date Title
JP3174417B2 (ja) 酸化ケイ素膜の形成方法
JP3174416B2 (ja) 酸化ケイ素膜の形成方法
JP3210457B2 (ja) 酸化ケイ素膜の形成方法
KR100295485B1 (ko) 산화규소막의제조방법
US6177143B1 (en) Electron beam treatment of siloxane resins
US5547703A (en) Method of forming si-o containing coatings
US4981530A (en) Planarizing ladder-type silsesquioxane polymer insulation layer
JPH07258607A (ja) シルセスキオキサンコポリマーコーティングの平坦化
KR20020025992A (ko) Ｕｌｓｉ 적용에 사용되는 실록산 중합체로 처리된나노다공성 실리카
JPH06191970A (ja) シリカ含有セラミックコーティングの形成方法
EP0935632B1 (en) Stable solutions of a silsesquioxane or siloxane resin and a silicone solvent
US5906859A (en) Method for producing low dielectric coatings from hydrogen silsequioxane resin
JPWO2001048806A1 (ja) 低誘電率シリカ系被膜の形成方法および低誘電率被膜付半導体基板
JPH1140554A (ja) 絶縁膜形成材料、並びにこれを用いた絶縁膜形成方法及び半導体装置
JP3229419B2 (ja) 酸化ケイ素膜の形成方法
JP3485425B2 (ja) 低誘電率絶縁膜の形成方法及びこの膜を用いた半導体装置
US20040096398A1 (en) Siloxane-based resin and method of forming an insulating film between interconnect layers of a semiconductor device using the same
TW200307709A (en) Organosiloxanes
JP2000058540A (ja) 低誘電率絶縁膜形成用組成物および低誘電率絶縁膜形成方法
JPH07242747A (ja) 有機珪素重合体及び半導体装置
JPH06181201A (ja) 半導体装置の絶縁膜およびその絶縁膜形成用塗布液
JP4344903B2 (ja) 半導体素子用の層間絶縁膜形成用材料
JP3188782B2 (ja) 酸化ケイ素膜の形成方法
JP2000021872A (ja) 低誘電率樹脂組成物、低誘電率絶縁膜形成方法および半導体装置の製造方法
JP3229418B2 (ja) 酸化ケイ素膜の形成方法

Legal Events

Date Code Title Description
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20010220

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080330

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090330

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100330

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110330

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110330

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120330

Year of fee payment: 11

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130330

Year of fee payment: 12

EXPY Cancellation because of completion of term
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130330

Year of fee payment: 12