JP3153647B2 - 電荷転送装置の製造方法 - Google Patents

電荷転送装置の製造方法

Info

Publication number
JP3153647B2
JP3153647B2 JP24445792A JP24445792A JP3153647B2 JP 3153647 B2 JP3153647 B2 JP 3153647B2 JP 24445792 A JP24445792 A JP 24445792A JP 24445792 A JP24445792 A JP 24445792A JP 3153647 B2 JP3153647 B2 JP 3153647B2
Authority
JP
Japan
Prior art keywords
layer
conductivity type
charge transfer
transfer device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP24445792A
Other languages
English (en)
Japanese (ja)
Other versions
JPH06326136A (ja
Inventor
眞司 宇家
Original Assignee
エルジイ・セミコン・カンパニイ・リミテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エルジイ・セミコン・カンパニイ・リミテッド filed Critical エルジイ・セミコン・カンパニイ・リミテッド
Publication of JPH06326136A publication Critical patent/JPH06326136A/ja
Application granted granted Critical
Publication of JP3153647B2 publication Critical patent/JP3153647B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/01—Manufacture or treatment
    • H10D44/041—Manufacture or treatment having insulated gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462—Buried-channel CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462—Buried-channel CCD
    • H10D44/464—Two-phase CCD

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP24445792A 1991-09-14 1992-09-14 電荷転送装置の製造方法 Expired - Lifetime JP3153647B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1991-16045 1991-09-14
KR1019910016045A KR940009601B1 (ko) 1991-09-14 1991-09-14 전하전송장치의 제조방법

Publications (2)

Publication Number Publication Date
JPH06326136A JPH06326136A (ja) 1994-11-25
JP3153647B2 true JP3153647B2 (ja) 2001-04-09

Family

ID=19319950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24445792A Expired - Lifetime JP3153647B2 (ja) 1991-09-14 1992-09-14 電荷転送装置の製造方法

Country Status (5)

Country Link
US (1) US5240873A (en:Method)
JP (1) JP3153647B2 (en:Method)
KR (1) KR940009601B1 (en:Method)
DE (1) DE4230648B4 (en:Method)
TW (1) TW216470B (en:Method)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5245212A (en) * 1989-12-26 1993-09-14 Texas Instruments Incorporated Self-aligned field-plate isolation between active elements
US5298448A (en) * 1992-12-18 1994-03-29 Eastman Kodak Company Method of making two-phase buried channel planar gate CCD
US5292682A (en) * 1993-07-06 1994-03-08 Eastman Kodak Company Method of making two-phase charge coupled device
US5460997A (en) * 1995-01-23 1995-10-24 Eastman Kodak Company Method of making a confined planar charge coupled device with edge aligned implants and interconnected electrodes
US5712203A (en) * 1995-12-11 1998-01-27 United Microelectronics Corporation Process for fabricating read-only memory cells using removable barrier strips
KR100192328B1 (ko) * 1996-04-03 1999-06-15 구본준 양방향 수평전하 전송소자
KR100209758B1 (ko) * 1996-06-26 1999-07-15 구본준 고체 촬상 소자 및 그의 제조 방법
JP3204169B2 (ja) 1997-07-23 2001-09-04 日本電気株式会社 半導体装置の製造方法
US6300160B1 (en) * 1999-11-18 2001-10-09 Eastman Kodak Company Process for charge coupled image sensor with U-shaped gates
US6489246B1 (en) * 2001-05-01 2002-12-03 Eastman Kodak Company Method for manufacturing charge-coupled image sensors
JP5408964B2 (ja) * 2008-10-30 2014-02-05 シャープ株式会社 固体撮像素子および電子情報機器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3931674A (en) * 1974-02-08 1976-01-13 Fairchild Camera And Instrument Corporation Self aligned CCD element including two levels of electrodes and method of manufacture therefor
JPS5915498B2 (ja) * 1975-08-09 1984-04-10 松下電器産業株式会社 半導体装置の製造方法
GB1527894A (en) * 1975-10-15 1978-10-11 Mullard Ltd Methods of manufacturing electronic devices
JPS53110385A (en) * 1977-03-08 1978-09-27 Matsushita Electric Ind Co Ltd Manufacture of ccd
JPH0714052B2 (ja) * 1986-11-05 1995-02-15 富士写真フイルム株式会社 電荷結合デバイスの電極形成方法
JPS63244882A (ja) * 1987-03-31 1988-10-12 Rohm Co Ltd 電荷結合素子の製造方法

Also Published As

Publication number Publication date
JPH06326136A (ja) 1994-11-25
TW216470B (en:Method) 1993-11-21
KR940009601B1 (ko) 1994-10-15
US5240873A (en) 1993-08-31
KR930006828A (ko) 1993-04-22
DE4230648A1 (de) 1993-03-18
DE4230648B4 (de) 2006-04-06

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