JP3084232B2 - 縦型加熱処理装置 - Google Patents

縦型加熱処理装置

Info

Publication number
JP3084232B2
JP3084232B2 JP08165375A JP16537596A JP3084232B2 JP 3084232 B2 JP3084232 B2 JP 3084232B2 JP 08165375 A JP08165375 A JP 08165375A JP 16537596 A JP16537596 A JP 16537596A JP 3084232 B2 JP3084232 B2 JP 3084232B2
Authority
JP
Japan
Prior art keywords
heat treatment
semiconductor wafer
heating
process chamber
heater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP08165375A
Other languages
English (en)
Japanese (ja)
Other versions
JPH09326365A (ja
Inventor
益三 山田
耕三 荻野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eaton Corp
Original Assignee
Eaton Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eaton Corp filed Critical Eaton Corp
Priority to JP08165375A priority Critical patent/JP3084232B2/ja
Priority to EP96928741A priority patent/EP0848223B1/de
Priority to PCT/JP1996/002484 priority patent/WO1997046842A1/ja
Priority to DE69625212T priority patent/DE69625212T2/de
Publication of JPH09326365A publication Critical patent/JPH09326365A/ja
Application granted granted Critical
Publication of JP3084232B2 publication Critical patent/JP3084232B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any preceding group
    • F27B17/0016—Chamber type furnaces
JP08165375A 1996-06-04 1996-06-04 縦型加熱処理装置 Expired - Fee Related JP3084232B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP08165375A JP3084232B2 (ja) 1996-06-04 1996-06-04 縦型加熱処理装置
EP96928741A EP0848223B1 (de) 1996-06-04 1996-08-30 Vertikale wärmebehandlungsvorrichtung
PCT/JP1996/002484 WO1997046842A1 (fr) 1996-06-04 1996-08-30 Dispositif de traitement thermique vertical
DE69625212T DE69625212T2 (de) 1996-06-04 1996-08-30 Vertikale wärmebehandlungsvorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP08165375A JP3084232B2 (ja) 1996-06-04 1996-06-04 縦型加熱処理装置

Publications (2)

Publication Number Publication Date
JPH09326365A JPH09326365A (ja) 1997-12-16
JP3084232B2 true JP3084232B2 (ja) 2000-09-04

Family

ID=15811185

Family Applications (1)

Application Number Title Priority Date Filing Date
JP08165375A Expired - Fee Related JP3084232B2 (ja) 1996-06-04 1996-06-04 縦型加熱処理装置

Country Status (4)

Country Link
EP (1) EP0848223B1 (de)
JP (1) JP3084232B2 (de)
DE (1) DE69625212T2 (de)
WO (1) WO1997046842A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4889896B2 (ja) * 2000-11-09 2012-03-07 バッテル メモリアル インスティテュート 多孔質シリカの脱ヒドロキシル化およびアルキル化のための真空／気相反応器
CN104106128B (zh) * 2012-02-13 2016-11-09 应用材料公司 用于基板的选择性氧化的方法和设备

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3916822A (en) * 1974-04-26 1975-11-04 Bell Telephone Labor Inc Chemical vapor deposition reactor
JPS61248517A (ja) * 1985-04-26 1986-11-05 Oki Electric Ind Co Ltd 化合物半導体薄膜の製造装置
JPH0693439B2 (ja) * 1987-03-20 1994-11-16 株式会社日立製作所 半導体ウエハの熱処理装置
US5156820A (en) * 1989-05-15 1992-10-20 Rapro Technology, Inc. Reaction chamber with controlled radiant energy heating and distributed reactant flow
US5136978A (en) * 1989-10-30 1992-08-11 The United States Of America As Represented By The Secretary Of The Air Force Heat pipe susceptor for epitaxy
EP1049356A3 (de) * 1990-01-19 2001-03-28 Applied Materials, Inc. Heizvorrichtung für Halbleiterscheiben oder Substraten
JP2927903B2 (ja) * 1990-07-20 1999-07-28 アネルバ株式会社 輻射式基板加熱装置の温度制御方法
JPH0479421U (de) * 1990-11-22 1992-07-10
US5387557A (en) * 1991-10-23 1995-02-07 F. T. L. Co., Ltd. Method for manufacturing semiconductor devices using heat-treatment vertical reactor with temperature zones
JPH05291154A (ja) * 1992-04-06 1993-11-05 Kokusai Electric Co Ltd 枚葉式成膜方法及び装置
JPH0613324A (ja) * 1992-06-26 1994-01-21 Fujitsu Ltd 真空加熱装置
JPH06295915A (ja) * 1993-04-09 1994-10-21 F T L:Kk 半導体装置の製造装置及び半導体装置の製造方法
JPH07193020A (ja) * 1993-12-27 1995-07-28 Toshiba Ceramics Co Ltd 半導体用熱処理炉

Also Published As

Publication number Publication date
JPH09326365A (ja) 1997-12-16
DE69625212D1 (de) 2003-01-16
WO1997046842A1 (fr) 1997-12-11
EP0848223B1 (de) 2002-12-04
EP0848223A4 (de) 2000-07-12
EP0848223A1 (de) 1998-06-17
DE69625212T2 (de) 2003-11-13

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