DE69625212T2 - Vertikale wärmebehandlungsvorrichtung - Google Patents
Vertikale wärmebehandlungsvorrichtungInfo
- Publication number
- DE69625212T2 DE69625212T2 DE69625212T DE69625212T DE69625212T2 DE 69625212 T2 DE69625212 T2 DE 69625212T2 DE 69625212 T DE69625212 T DE 69625212T DE 69625212 T DE69625212 T DE 69625212T DE 69625212 T2 DE69625212 T2 DE 69625212T2
- Authority
- DE
- Germany
- Prior art keywords
- heat treatment
- treatment device
- vertical heat
- vertical
- treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/12—Heating of the reaction chamber
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP08165375A JP3084232B2 (ja) | 1996-06-04 | 1996-06-04 | 縦型加熱処理装置 |
PCT/JP1996/002484 WO1997046842A1 (fr) | 1996-06-04 | 1996-08-30 | Dispositif de traitement thermique vertical |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69625212D1 DE69625212D1 (de) | 2003-01-16 |
DE69625212T2 true DE69625212T2 (de) | 2003-11-13 |
Family
ID=15811185
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69625212T Expired - Fee Related DE69625212T2 (de) | 1996-06-04 | 1996-08-30 | Vertikale wärmebehandlungsvorrichtung |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0848223B1 (de) |
JP (1) | JP3084232B2 (de) |
DE (1) | DE69625212T2 (de) |
WO (1) | WO1997046842A1 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4889896B2 (ja) * | 2000-11-09 | 2012-03-07 | バッテル メモリアル インスティテュート | 多孔質シリカの脱ヒドロキシル化およびアルキル化のための真空/気相反応器 |
CN104106128B (zh) * | 2012-02-13 | 2016-11-09 | 应用材料公司 | 用于基板的选择性氧化的方法和设备 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3916822A (en) * | 1974-04-26 | 1975-11-04 | Bell Telephone Labor Inc | Chemical vapor deposition reactor |
JPS61248517A (ja) * | 1985-04-26 | 1986-11-05 | Oki Electric Ind Co Ltd | 化合物半導体薄膜の製造装置 |
JPH0693439B2 (ja) * | 1987-03-20 | 1994-11-16 | 株式会社日立製作所 | 半導体ウエハの熱処理装置 |
US5156820A (en) * | 1989-05-15 | 1992-10-20 | Rapro Technology, Inc. | Reaction chamber with controlled radiant energy heating and distributed reactant flow |
US5136978A (en) * | 1989-10-30 | 1992-08-11 | The United States Of America As Represented By The Secretary Of The Air Force | Heat pipe susceptor for epitaxy |
JPH0693440B2 (ja) * | 1990-01-19 | 1994-11-16 | ジー スクウェアード セミコンダクター コーポレイション | 急速加熱装置及び方法 |
JP2927903B2 (ja) * | 1990-07-20 | 1999-07-28 | アネルバ株式会社 | 輻射式基板加熱装置の温度制御方法 |
JPH0479421U (de) * | 1990-11-22 | 1992-07-10 | ||
US5387557A (en) * | 1991-10-23 | 1995-02-07 | F. T. L. Co., Ltd. | Method for manufacturing semiconductor devices using heat-treatment vertical reactor with temperature zones |
JPH05291154A (ja) * | 1992-04-06 | 1993-11-05 | Kokusai Electric Co Ltd | 枚葉式成膜方法及び装置 |
JPH0613324A (ja) * | 1992-06-26 | 1994-01-21 | Fujitsu Ltd | 真空加熱装置 |
JPH06295915A (ja) * | 1993-04-09 | 1994-10-21 | F T L:Kk | 半導体装置の製造装置及び半導体装置の製造方法 |
JPH07193020A (ja) * | 1993-12-27 | 1995-07-28 | Toshiba Ceramics Co Ltd | 半導体用熱処理炉 |
-
1996
- 1996-06-04 JP JP08165375A patent/JP3084232B2/ja not_active Expired - Fee Related
- 1996-08-30 EP EP96928741A patent/EP0848223B1/de not_active Expired - Lifetime
- 1996-08-30 DE DE69625212T patent/DE69625212T2/de not_active Expired - Fee Related
- 1996-08-30 WO PCT/JP1996/002484 patent/WO1997046842A1/ja active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JP3084232B2 (ja) | 2000-09-04 |
WO1997046842A1 (fr) | 1997-12-11 |
JPH09326365A (ja) | 1997-12-16 |
EP0848223A4 (de) | 2000-07-12 |
EP0848223A1 (de) | 1998-06-17 |
DE69625212D1 (de) | 2003-01-16 |
EP0848223B1 (de) | 2002-12-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |