JP3051700B2 - Method of manufacturing multilayer wiring board with built-in element - Google Patents

Method of manufacturing multilayer wiring board with built-in element

Info

Publication number
JP3051700B2
JP3051700B2 JP9201653A JP20165397A JP3051700B2 JP 3051700 B2 JP3051700 B2 JP 3051700B2 JP 9201653 A JP9201653 A JP 9201653A JP 20165397 A JP20165397 A JP 20165397A JP 3051700 B2 JP3051700 B2 JP 3051700B2
Authority
JP
Japan
Prior art keywords
wiring board
resin
circuit layer
insulating
wiring circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP9201653A
Other languages
Japanese (ja)
Other versions
JPH1145955A (en
Inventor
桂 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP9201653A priority Critical patent/JP3051700B2/en
Publication of JPH1145955A publication Critical patent/JPH1145955A/en
Application granted granted Critical
Publication of JP3051700B2 publication Critical patent/JP3051700B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241Disposition
    • H01L2224/24151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/24221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/24225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/24227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect not connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the semiconductor or solid-state body being mounted in a cavity or on a protrusion of the item

Landscapes

  • Production Of Multi-Layered Print Wiring Board (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、例えば、多層配線
基板及び半導体素子収納用パッケージなどに適し、特に
絶縁基板内部に電気素子が内蔵されてなる多層配線基板
の製造方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a multilayer wiring board suitable for, for example, a multilayer wiring board and a package for accommodating a semiconductor element, and more particularly to a multilayer wiring board having an electric element built in an insulating substrate.

【0002】[0002]

【従来技術】従来より、電子機器は小型化が進んでいる
が、近年携帯情報端末の発達や、コンピューターを持ち
運んで操作する、いわゆるモバイルコンピューティング
の普及によってさらに小型、薄型且つ高精細の多層配線
基板が求められる傾向にある。
2. Description of the Related Art Conventionally, electronic devices have been miniaturized. However, in recent years, with the development of portable information terminals and the spread of so-called mobile computing in which computers are carried and operated, so-called multi-layer wirings of smaller, thinner and higher definition have been developed. Substrates tend to be required.

【0003】従来のプリント配線基板では、プリプレグ
と呼ばれる有機樹脂を含む平板の表面に銅箔を接着した
後、これをエッチングして微細な回路を形成し、これを
積層した後、所望位置にマイクロドリルでスルーホール
の穴明けを行い、そのホール内壁にメッキ法により金属
を付着させてスルーホール導体を形成して各層間の電気
的な接続を行っている。
In a conventional printed wiring board, a copper foil is adhered to the surface of a flat plate containing an organic resin called a prepreg, and then etched to form a fine circuit. Through holes are drilled with a drill, metal is adhered to the inner walls of the holes by plating to form through-hole conductors, and electrical connection between the layers is performed.

【0004】ところが、この方法では、スルーホール導
体は配線基板全体にわたり貫通したものであるために、
積層数が増加するに伴い、スルーホール数が増加する
と、配線に必要なスペースが確保できなくなるという問
題が生じ、電子機器の軽量、小型化に伴うプリント基板
の薄層化、小型化、軽量化に対しては、対応できないの
が現状である。
However, in this method, since the through-hole conductor penetrates the entire wiring board,
As the number of stacked layers increases, the number of through-holes increases, making it impossible to secure the space required for wiring, and the thinning, miniaturization, and weight reduction of printed circuit boards accompanying the lightness and miniaturization of electronic devices. Can not respond to the current situation.

【0005】そこで、最近では、絶縁層に対して形成し
たビアホール内に金属粉末を充填してビアホール導体を
形成した後、他の絶縁層を積層して多層化した配線基板
が提案されている。
Therefore, recently, a wiring board has been proposed in which a via hole formed in an insulating layer is filled with metal powder to form a via-hole conductor, and then another insulating layer is laminated to form a multilayer.

【0006】また、従来のプリント配線基板に対して、
半導体素子やコンデンサ素子、抵抗素子などを実装する
場合には、配線基板の表面に形成された配線回路層に対
してこれらの電気素子を半田等により実装し、実装した
素子を樹脂によってモールドする方法、絶縁基板の表面
に凹部を形成して、その凹部内に素子を収納して樹脂モ
ールドしたり、蓋体によって凹部を気密に封止する方法
がある。
[0006] Further, with respect to a conventional printed wiring board,
When mounting semiconductor elements, capacitor elements, resistance elements, etc., these electric elements are mounted on the wiring circuit layer formed on the surface of the wiring board by soldering, etc., and the mounted elements are molded with resin. There is a method of forming a concave portion on the surface of an insulating substrate, housing the element in the concave portion and performing resin molding, or sealing the concave portion hermetically with a lid.

【0007】[0007]

【発明が解決しようとする課題】しかしながら、ビアホ
ール導体を金属粉末の充填によって形成する方法は、ビ
アホール導体の小径化が可能であるとともに、任意の位
置に配設できる点で配線基板の小型化に対しては有効で
あるが、配線基板をより多層化したとしても、その配線
基板に搭載する素子は、配線基板の表面にしか実装する
ことができないために、配線基板の小型化には自ずと限
界があった。
However, the method of forming the via-hole conductor by filling the metal powder can reduce the diameter of the via-hole conductor and reduce the size of the wiring board in that the via-hole conductor can be arranged at an arbitrary position. Although it is effective for wiring boards, even if the wiring board is multi-layered, the elements mounted on the wiring board can only be mounted on the surface of the wiring board, which naturally limits the miniaturization of the wiring board was there.

【0008】従って、本発明は、半導体素子や電子部品
(コンデンサ素子、抵抗素子、フィルター素子、発振素
子など)の電気素子を搭載する多層配線基板において、
基板の小型化と、素子の実装密度を高めることのできる
多層配線基板を容易に作製することのできる素子内蔵多
層配線基板の製造方法を提供することを目的とするもの
である。
Accordingly, the present invention provides a multilayer wiring board on which electric elements such as semiconductor elements and electronic parts (capacitor elements, resistance elements, filter elements, oscillation elements, etc.) are mounted.
An object of the present invention is to provide a method for manufacturing a multilayer wiring board with a built-in element, which can easily produce a multilayer wiring board capable of reducing the size of the board and increasing the mounting density of the elements.

【0009】[0009]

【課題を解決するための手段】本発明者は、電気素子を
搭載した配線基板の小型化について検討を重ねた結果、
配線基板内に、電気素子を実装収納するための空隙部を
形成することにより、配線基板のより多くの電気素子を
搭載した小型の配線基板を提供できること、さらには、
配線基板を作製するにあたり、金属箔からなる配線回路
層を転写シートからの転写によって形成する際に、転写
シート上の銅箔に予め電気素子を半田などで接続した後
に、空隙部を形成した絶縁層に転写することで、絶縁層
に何ら影響を及ぼすことなく、素子を内蔵した配線基板
を作製できることを見いだし、本発明に至った。
The inventor of the present invention has studied the miniaturization of a wiring board on which electric elements are mounted, and as a result,
By forming a gap portion for mounting and housing the electric element in the wiring board, it is possible to provide a small-sized wiring board on which more electric elements of the wiring board are mounted.
When manufacturing a wiring board, when forming a wiring circuit layer made of metal foil by transfer from a transfer sheet, an electrical element was previously connected to the copper foil on the transfer sheet by soldering or the like, and then a gap was formed. The present inventors have found that a wiring board having a built-in element can be manufactured without any influence on an insulating layer by transferring to a layer.

【0010】即ち、本発明の素子内蔵多層配線基板の製
造方法は、転写シートの表面に形成された配線回路層に
電気素子を実装する実装工程と、少なくとも熱硬化性樹
脂からなる第1の絶縁層にキャビティを形成するキャビ
ティ形成工程と、前記第1の絶縁層の前記キャビティ内
に前記電気素子が収納されるように、前記転写シートか
ら前記配線回路層と前記電気素子を前記第1の絶縁層に
転写する転写工程と、転写工程後の前記第1の絶縁層の
上下面に、少なくとも熱硬化性樹脂を含む第2および第
3の絶縁層を積層圧着する積層工程と、該積層物を一括
して熱硬化させる工程と、を具備することを特徴とする
ものである。
That is, according to the method of manufacturing a multi-layer wiring board with a built-in element of the present invention, a mounting step of mounting an electric element on a wiring circuit layer formed on a surface of a transfer sheet, and a first insulating layer made of at least a thermosetting resin. A cavity forming step of forming a cavity in the layer; and the first insulating layer separating the wiring circuit layer and the electric element from the transfer sheet so that the electric element is housed in the cavity of the first insulating layer. A transfer step of transferring to a layer, a laminating step of laminating and pressing at least second and third insulating layers containing a thermosetting resin on the upper and lower surfaces of the first insulating layer after the transferring step, and And a step of performing thermal curing at once.

【0011】[0011]

【発明の実施の形態】以下、本発明を図面をもとに説明
する。図1は、本発明の素子内蔵多層配線基板を製造す
るための製造工程を説明するための図である。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings. FIG. 1 is a diagram for explaining a manufacturing process for manufacturing a multilayer wiring board with a built-in element according to the present invention.

【0012】図1によれば、まず、図1(a)に示すよ
うに、熱硬化性樹脂を含む軟質(Bステージ状態)の第
1の絶縁シート1を作製する。また、この絶縁シート1
には、所望により厚み方向に貫通するスルーホールを形
成し、そのスルーホール内に金属粉末を含む導体ペース
トをスクリーン印刷や吸引処理しながら充填して、ビア
ホール導体2を形成する。また、この絶縁シート1の所
定箇所に電気素子を収納するための空隙部3を形成す
る。
According to FIG. 1, first, as shown in FIG. 1A, a soft (B-stage) first insulating sheet 1 containing a thermosetting resin is prepared. Also, this insulating sheet 1
Then, if necessary, a through-hole penetrating in the thickness direction is formed, and the via-hole conductor 2 is formed by filling the through-hole with a conductive paste containing a metal powder while performing screen printing or suction processing. In addition, a gap 3 for accommodating an electric element is formed at a predetermined position of the insulating sheet 1.

【0013】次に、図1(b)に示すように、絶縁シー
ト1の表面に配線回路層4を形成するとともに、絶縁シ
ート1の空隙部に電気素子5を実装収納する。配線回路
層4は、1)絶縁シート1の表面に金属箔を貼り付けた
後、エッチング処理して回路パターンを形成する方法、
2)絶縁シート1表面にレジストを形成して、メッキに
より形成する方法、3)転写フィルム表面に金属箔を貼
り付け、金属箔をエッチング処理して回路パターンを形
成した後、この金属箔からなる回路パターンを絶縁シー
ト1表面に転写させる方法等が挙げられる。
Next, as shown in FIG. 1B, the wiring circuit layer 4 is formed on the surface of the insulating sheet 1, and the electric element 5 is mounted and accommodated in the gap of the insulating sheet 1. The wiring circuit layer 4 includes: 1) a method of forming a circuit pattern by attaching a metal foil to the surface of the insulating sheet 1 and then performing an etching process;
2) A method in which a resist is formed on the surface of the insulating sheet 1 and formed by plating. 3) A metal foil is attached to the surface of the transfer film, and the metal foil is etched to form a circuit pattern. A method of transferring a circuit pattern onto the surface of the insulating sheet 1 is exemplified.

【0014】本製造方法においては、配線回路層4と、
配線回路層4に電気素子5を実装した構造物を転写フィ
ルムから絶縁シート1に転写させる。その具体的な方法
を図1(b1)〜(b3)に示す。この方法によれば、
例えば、樹脂や金属からなる転写フィルム6の表面に金
属箔を接着した後、エッチングして配線回路層4を形成
する(図1(b1))。その後、その配線回路層4に、
電気素子5を半田、TAB、ワイヤーボンディングによ
り実装する(図1(b2))。
In the present manufacturing method, the wiring circuit layer 4,
The structure in which the electric element 5 is mounted on the wiring circuit layer 4 is transferred from the transfer film to the insulating sheet 1. The specific method is shown in FIGS. 1 (b1) to (b3). According to this method,
For example, a metal foil is adhered to the surface of the transfer film 6 made of resin or metal, and then etched to form the wiring circuit layer 4 (FIG. 1 (b1)). Then, in the wiring circuit layer 4,
The electric element 5 is mounted by soldering, TAB, and wire bonding (FIG. 1 (b2)).

【0015】その後、電気素子5が実装された転写フィ
ルム6を絶縁シート1に対して、電気素子5が絶縁シー
ト1の空隙部3に収納されるように積層して圧着した
後、転写フィルム6を剥がして(図1(b3))、配線
回路層4と電気素子5とを絶縁シート1に転写させて、
図1(b)に示すような電気素子5が空隙部3に実装収
納された単層の配線層を形成することができる。この
時、絶縁シート1は、未硬化または半硬化状態であり軟
質であることから、配線回路層4を圧着することによ
り、絶縁シート1の表面に埋め込むことができるととも
に、絶縁シート1に形成されたビアホール導体2を緻密
化することができる。
Thereafter, the transfer film 6 on which the electric element 5 is mounted is laminated and pressed on the insulating sheet 1 so that the electric element 5 is accommodated in the gap 3 of the insulating sheet 1. Is peeled off (FIG. 1 (b3)), the wiring circuit layer 4 and the electric element 5 are transferred to the insulating sheet 1, and
As shown in FIG. 1B, a single wiring layer in which the electric element 5 is mounted and accommodated in the gap 3 can be formed. At this time, since the insulating sheet 1 is uncured or semi-cured and is soft, it can be embedded in the surface of the insulating sheet 1 by pressing the wiring circuit layer 4 and formed on the insulating sheet 1. Via hole conductor 2 can be made denser.

【0016】また、上記の例では、基本的には、電気素
子5を実装する配線回路層4は、電気素子5とともに、
同時に転写させるものであるが、電気素子5の実装に関
与しない配線回路層(図示せず)は、電気素子5と配線
回路層4とともに同時するか、または個別に前述した
1)〜3)のいずれの方法で形成してもよい。また、空
隙部3内に収納された電気素子5は、配線回路層4に実
装された状態でエポキシ樹脂等により封止してもよい。
In the above example, basically, the wiring circuit layer 4 on which the electric element 5 is mounted, together with the electric element 5,
The wiring circuit layer (not shown) which is to be transferred at the same time but is not involved in the mounting of the electric element 5 can be transferred together with the electric element 5 and the wiring circuit layer 4 or separately from the above-mentioned 1) to 3). It may be formed by any method. The electric element 5 housed in the gap 3 may be sealed with an epoxy resin or the like while being mounted on the wiring circuit layer 4.

【0017】次に、上記のように空隙部3内に電気素子
5が実装収納された絶縁シート1の上下面に、軟化状態
(Bステージ状態)の第2および第3の絶縁シート7、
8を積層圧着して、絶縁シート1、7、8中の熱硬化性
樹脂が硬化するに十分な温度に加熱して一括して完全硬
化させる。なお、絶縁シート7、8には、配線回路層
9、10やビアホール導体11、12を前述した方法に
より適宜形成してもよい。このようにして、図1(c)
に示すように、絶縁基板13内に電気素子5を内蔵する
多層配線基板を形成することができる。
Next, the second and third insulating sheets 7 in a softened state (B stage state) are provided on the upper and lower surfaces of the insulating sheet 1 in which the electric element 5 is mounted and housed in the gap 3 as described above.
8 are laminated and pressure-bonded, heated to a temperature sufficient to cure the thermosetting resin in the insulating sheets 1, 7, 8 and completely cured at once. Note that the wiring sheets 9 and 10 and the via-hole conductors 11 and 12 may be appropriately formed on the insulating sheets 7 and 8 by the method described above. Thus, FIG. 1 (c)
As shown in (1), a multilayer wiring board in which the electric element 5 is built in the insulating substrate 13 can be formed.

【0018】また、本発明によれば、上記素子内蔵多層
配線基板の製造方法を基礎として、あらゆる形態の多層
配線基板を作製することができる。例えば、図2に示す
ように、多層配線基板の絶縁基板32内において、IC
素子33やコンデンサ34等のなどの電気素子を収納す
る空隙部35、36を同一面内、または異なる層内に空
隙部37を複数箇所形成して、これら複数の電気素子を
実装収納させることができる。また、絶縁基板32の表
面にも、他の電気素子38、39を表面実装することが
できる。その結果、表面のみならず、絶縁基板内部にも
電気素子を高密度に実装した多層配線基板を作製するこ
とができる。
Further, according to the present invention, a multilayer wiring board of any form can be manufactured based on the method of manufacturing a multilayer wiring board with a built-in element. For example, as shown in FIG.
It is possible to form a plurality of gaps 37 in the same plane or in different layers for accommodating gaps 35 and 36 for accommodating electric elements such as the element 33 and the capacitor 34, and to mount and accommodate the plurality of electric elements. it can. Also, other electric elements 38 and 39 can be surface-mounted on the surface of the insulating substrate 32. As a result, it is possible to manufacture a multilayer wiring board on which electric elements are mounted at high density not only on the surface but also inside the insulating substrate.

【0019】上記製造方法において、用いられる熱硬化
性樹脂を含有する絶縁シートは、熱硬化性有機樹脂、ま
たは熱硬化性有機樹脂とフィラーなどの組成物を混練機
や3本ロールなどの手段によって十分に混合し、これを
圧延法、押し出し法、射出法、ドクターブレード法など
によってシート状に成形する。そして、所望により熱処
理して熱硬化性樹脂を半硬化させる。半硬化には、樹脂
が完全硬化するに十分な温度よりもやや低い温度に加熱
する。
In the above manufacturing method, the insulating sheet containing the thermosetting resin used is prepared by mixing the thermosetting organic resin or the composition of the thermosetting organic resin and the filler with a kneader or a three-roll machine. The mixture is sufficiently mixed and formed into a sheet by a rolling method, an extrusion method, an injection method, a doctor blade method, or the like. Then, the thermosetting resin is semi-cured by heat treatment if desired. For semi-curing, the resin is heated to a temperature slightly lower than a temperature sufficient to completely cure the resin.

【0020】そして、この状態の絶縁層に対するスルー
ホール(ビアホール)および空隙部の形成は、ドリル、
パンチング、サンドブラスト、あるいは炭酸ガスレー
ザ、YAGレーザ、及びエキシマレーザ等の照射による
加工など公知の方法が採用される。
The formation of through holes (via holes) and voids in the insulating layer in this state is performed by using a drill,
A known method such as punching, sandblasting, or processing by irradiation with a carbon dioxide gas laser, a YAG laser, an excimer laser, or the like is employed.

【0021】なお、絶縁シートを形成する熱硬化性樹脂
としては、絶縁材料としての電気的特性、耐熱性、およ
び機械的強度を有する熱硬化性樹脂であれば特に限定さ
れるものでなく、例えば、アラミド樹脂、フェノール樹
脂、エポキシ樹脂、イミド樹脂、フッ素樹脂、フェニレ
ンエーテル樹脂、ビスマイレイドトリアジン樹脂、ユリ
ア樹脂、メラミン樹脂、シリコーン樹脂、ウレタン樹
脂、不飽和ポリエステル樹脂、アリル樹脂等が、単独ま
たは組み合わせて使用できる。
The thermosetting resin forming the insulating sheet is not particularly limited as long as it is a thermosetting resin having electrical properties, heat resistance and mechanical strength as an insulating material. , Aramid resin, phenolic resin, epoxy resin, imide resin, fluororesin, phenylene ether resin, bismailide triazine resin, urea resin, melamine resin, silicone resin, urethane resin, unsaturated polyester resin, allyl resin, etc., alone or Can be used in combination.

【0022】また、上記の絶縁シート1中には、絶縁基
板あるいは配線基板全体の強度を高めるために、有機樹
脂に対してフィラーを複合化させることもできる。有機
樹脂と複合化されるフィラーとしては、SiO2、Al2
3、ZrO2、TiO2、AlN、SiC、BaTi
3、SrTiO3、ゼオライト、CaTiO3、ほう酸
アルミニウム等の無機質フィラーが好適に用いられる。
また、ガラスやアラミド樹脂からなる不織布、織布など
に上記樹脂を含浸させて用いてもよい。なお、有機樹脂
とフィラーとは、体積比率で15:85〜50:50の
比率で複合化されるのが適当である。
In the insulating sheet 1, a filler can be compounded with an organic resin in order to increase the strength of the entire insulating substrate or wiring substrate. SiO 2 , Al 2
O 3 , ZrO 2 , TiO 2 , AlN, SiC, BaTi
Inorganic fillers such as O 3 , SrTiO 3 , zeolite, CaTiO 3 , and aluminum borate are preferably used.
Further, a nonwoven fabric or a woven fabric made of glass or aramid resin may be used by impregnating the above resin. The organic resin and the filler are preferably compounded in a volume ratio of 15:85 to 50:50.

【0023】これらの電気素子を収納するための空隙部
を形成する絶縁シートは、上記の種々の材質の中でも空
隙部をパンチング又はレーザーで容易に加工できる点か
ら、エポキシ樹脂、イミド樹脂、フェニレンエーテル樹
脂と、シリカまたはアラミド不織布との混合物であるこ
とが最も望ましい。
The insulating sheet forming the void for accommodating these electric elements is made of an epoxy resin, an imide resin, a phenylene ether, because the void can be easily processed by punching or laser among the various materials described above. Most preferably, it is a mixture of a resin and a silica or aramid nonwoven fabric.

【0024】一方、ビアホール導体2に充填される金属
ペーストは、銅粉末、銀粉末、銀被覆銅粉末、銅銀合金
などの、平均粒径が0.5〜50μmの金属粉末を含
む。金属粉末の平均粒径が0.5μmよりも小さいと、
金属粉末同士の接触抵抗が増加してスルーホール導体の
抵抗が高くなる傾向にあり、50μmを越えるとスルー
ホール導体の低抵抗化が難しくなる傾向にある。
On the other hand, the metal paste filled in the via-hole conductor 2 includes metal powder having an average particle size of 0.5 to 50 μm, such as copper powder, silver powder, silver-coated copper powder, and copper-silver alloy. When the average particle size of the metal powder is smaller than 0.5 μm,
The contact resistance between the metal powders tends to increase and the resistance of the through-hole conductor tends to increase. If it exceeds 50 μm, it tends to be difficult to reduce the resistance of the through-hole conductor.

【0025】また、導体ペーストは、前述したような金
属粉末に対して、前述したような結合用有機樹脂や溶剤
を添加混合して調製される。ペースト中に添加される溶
剤としては、用いる結合用有機樹脂が溶解可能な溶剤で
あればよく、例えば、イソプロピルアルコール、テルピ
ネオール、2−オクタノール、ブチルカルビトールアセ
テート等が用いられる。
The conductor paste is prepared by adding and mixing the above-mentioned organic resin for binding and the solvent to the above-mentioned metal powder. The solvent to be added to the paste may be any solvent that can dissolve the binding organic resin to be used. For example, isopropyl alcohol, terpineol, 2-octanol, butyl carbitol acetate and the like are used.

【0026】上記の導体ペースト中の結合用有機樹脂と
しては、前述した種々の絶縁シートを構成する有機樹脂
の他、セルロースなども使用される。この有機樹脂は、
前記金属粉末同士を互いに接触させた状態で結合すると
ともに、金属粉末を絶縁シートに接着させる作用をなし
ている。この有機樹脂は、金属ペースト中において、
0.1乃至40体積%、特に0.3乃至30体積%の割
合で含有されることが望ましい。これは、樹脂量が0.
1体積%よりも少ないと、金属粉末同士を強固に結合す
ることが難しく、低抵抗金属を絶縁層に強固に接着させ
ることが困難となり、逆に40体積%を越えると、金属
粉末間に樹脂が介在することになり粉末同士を十分に接
触させることが難しくなり、スルーホール導体の抵抗が
大きくなるためである。
As the organic resin for binding in the above-mentioned conductor paste, cellulose and the like are used in addition to the above-mentioned organic resins constituting the various insulating sheets. This organic resin is
The metal powders are bonded in a state where they are in contact with each other, and the metal powders are bonded to the insulating sheet. This organic resin, in the metal paste,
It is desirable that the content is 0.1 to 40% by volume, particularly 0.3 to 30% by volume. This means that the amount of resin is 0.1.
If the amount is less than 1% by volume, it is difficult to firmly bond the metal powders to each other, and it is difficult to firmly bond the low-resistance metal to the insulating layer. This makes it difficult to bring the powders into sufficient contact with each other and increases the resistance of the through-hole conductor.

【0027】配線回路層としては、銅、アルミニウム、
金、銀の群から選ばれる少なくとも1種、または2種以
上の合金からなることが望ましく、特に、銅、または銅
を含む合金が最も望ましい。また、場合によっては、導
体組成物として回路の抵抗調整のためにNi−Cr合金
などの高抵抗の金属を混合、または合金化してもよい。
さらには、配線層の低抵抗化のために、前記低抵抗金属
よりも低融点の金属、例えば、半田、錫などの低融点金
属を導体組成物中の金属成分中に2〜20重量%の割合
で含んでもよい。
As the wiring circuit layer, copper, aluminum,
It is desirable to be made of at least one kind or two or more kinds of alloys selected from the group of gold and silver, and particularly, copper or an alloy containing copper is most desirable. In some cases, a high-resistance metal such as a Ni—Cr alloy may be mixed or alloyed as the conductor composition for adjusting the resistance of the circuit.
Further, in order to lower the resistance of the wiring layer, a metal having a lower melting point than the low-resistance metal, for example, a low-melting metal such as solder or tin is used in an amount of 2 to 20% by weight in the metal component in the conductor composition. It may be included in proportion.

【0028】配線回路層4と絶縁シート1との密着強度
を高める上では、絶縁シート1の配線回路層4の形成箇
所および/または転写フィルム表面の配線回路層4表面
の表面を0.1μm以上、特に0.3μm〜3μm、最
適には0.3〜1.5μmに粗面加工することが望まし
い。また、ビアホール導体の両端を金属箔からなる配線
回路層によって封止する上では、配線回路層4の厚み
は、5〜40μmが適当である。
In order to increase the adhesion strength between the wiring circuit layer 4 and the insulating sheet 1, the location of the wiring circuit layer 4 on the insulating sheet 1 and / or the surface of the wiring circuit layer 4 on the transfer film surface should be 0.1 μm or more. In particular, it is desirable to roughen the surface to 0.3 μm to 3 μm, optimally to 0.3 to 1.5 μm. In order to seal both ends of the via-hole conductor with a wiring circuit layer made of a metal foil, the thickness of the wiring circuit layer 4 is appropriately 5 to 40 μm.

【0029】このようにして、本発明によれば、簡単な
積層方法を用いて、複数の絶縁層が積層されてなる絶縁
基板内部に電気素子を実装収納することができ、これに
より多層配線基板の電気素子を高密度に実装することが
でき、多層配線基板の小型化を図ることができる。
As described above, according to the present invention, an electric element can be mounted and housed in an insulating substrate having a plurality of insulating layers laminated by using a simple laminating method. Can be mounted at high density, and the size of the multilayer wiring board can be reduced.

【0030】[0030]

【実施例】(1) アラミド樹脂の不織布に対してイミ
ド樹脂を50体積%の割合で含浸した厚さ100μmの
プリプレグに、炭酸ガスレーザーで直径0.1mmのビ
アホールを形成し、そのホール内に銀をメッキした銅粉
末を含む銅ペーストを充填してビアホール導体を形成し
た。また、このプリプレグにレーザーを用いて半導体素
子や電子部品を設置するための12mm×12mmの大
きさの空隙部を形成した。
EXAMPLES (1) A via hole having a diameter of 0.1 mm was formed by a carbon dioxide laser in a prepreg having a thickness of 100 μm in which an amide resin was impregnated at a rate of 50% by volume with respect to an aramid resin nonwoven fabric. A via-hole conductor was formed by filling a copper paste containing silver-plated copper powder. Further, a void having a size of 12 mm × 12 mm for mounting a semiconductor element or an electronic component was formed in the prepreg using a laser.

【0031】(2)一方、イミド樹脂50体積%、シリ
カ粉末50体積%の割合となるように、ワニス状態の樹
脂と粉末を混合しドクターブレード法により、厚さ75
mmの絶縁シートを作製し、その絶縁シートにパンチン
グで直径0.1mmのビアホールを形成し、そのホール
内に銀をメッキした銅粉末を含む銅ペーストを充填して
ビアホール導体を形成した。
(2) On the other hand, a resin and powder in a varnish state are mixed so as to have a ratio of 50% by volume of the imide resin and 50% by volume of the silica powder, and a thickness of 75% is obtained by a doctor blade method.
An insulating sheet having a diameter of 0.1 mm was prepared, a via hole having a diameter of 0.1 mm was formed in the insulating sheet by punching, and a copper paste containing copper powder plated with silver was filled in the hole to form a via-hole conductor.

【0032】(3)また、一方、ポリエチレンテレフタ
レート(PET)樹脂からなる転写シートの表面に接着
剤を塗布し、厚さ12μm、表面粗さ0.8μmの銅箔
を一面に接着した。そして、フォトレジスト(ドライフ
ィルム)を塗布し露光現像を行った後、これを塩化第二
鉄溶液中に浸漬して非パターン部をエッチング除去して
配線回路層を形成した。なお、作製した配線回路層は、
線幅が20μm、配線と配線との間隔が20μmの微細
なパターンである。その後、この配線回路層にIC素子
をフリップチップ接続し、ポリイミド樹脂で封止した。
(3) On the other hand, an adhesive was applied to the surface of a transfer sheet made of polyethylene terephthalate (PET) resin, and a copper foil having a thickness of 12 μm and a surface roughness of 0.8 μm was adhered to one surface. Then, after applying a photoresist (dry film) and performing exposure and development, it was immersed in a ferric chloride solution to remove non-pattern portions by etching to form a wiring circuit layer. In addition, the produced wiring circuit layer is
This is a fine pattern having a line width of 20 μm and an interval between wirings of 20 μm. Thereafter, an IC element was flip-chip connected to the wiring circuit layer and sealed with a polyimide resin.

【0033】(4)そして、(1)で作製したプリプレ
グに対して、(2)で電気素子を実装した転写シート
を、プリプレグの空隙部に電気素子が収納されるように
位置決めして50kg/cm2の圧力を加えて圧着した
後、転写フィルムを剥離して、配線回路層とIC素子を
プリプレグに転写した。
(4) Then, with respect to the prepreg prepared in (1), the transfer sheet on which the electric element is mounted in (2) is positioned so that the electric element is accommodated in the gap of the prepreg, and the transfer sheet is placed at 50 kg / p. After applying a pressure of 2 cm 2 and pressure bonding, the transfer film was peeled off, and the wiring circuit layer and the IC element were transferred to a prepreg.

【0034】(5)(2)で作製した絶縁シートの表面
に、(3)と同様にして金属箔からなる配線回路層を形
成したPET樹脂フィルムから、配線回路層を転写させ
た。 (6)空隙部にIC素子が収納されたプリプレグを中心
に、その上下面に(5)のようにして配線回路層が転写
された絶縁シートを上下各2層づつ積層し50kg/c
2の圧力で圧着し、200℃で1時間加熱して完全硬
化させて多層配線基板を作製した。
(5) The wiring circuit layer was transferred from the PET resin film on which the wiring circuit layer made of metal foil was formed on the surface of the insulating sheet prepared in (2) in the same manner as in (3). (6) With the prepreg containing the IC element in the gap as the center, two upper and lower insulating sheets to which the wiring circuit layer has been transferred as in (5) are laminated on each of the upper and lower surfaces, and 50 kg / c.
It was press-bonded with a pressure of m 2 and heated at 200 ° C. for 1 hour to be completely cured to produce a multilayer wiring board.

【0035】得られた多層配線基板に対して、断面にお
ける配線回路層やビアホール導体の形成付近を観察した
結果、IC素子と配線回路層、ビアホール導体と配線回
路層とは良好な接続状態であり、各配線間の導通テスト
を行った結果、配線の断線も認められなかった。また、
IC素子の動作においても何ら問題はなかった。得られ
た多層配線基板を湿度85%、温度85℃の高温多湿雰
囲気に100時間放置したが、目視で判別できる程度の
変化は生じていなかった。
As a result of observing the vicinity of the formation of the wiring circuit layer and the via-hole conductor in the cross section of the obtained multilayer wiring board, the IC element and the wiring circuit layer and the via-hole conductor and the wiring circuit layer were in a good connection state. As a result of conducting a continuity test between the wirings, no disconnection of the wiring was observed. Also,
There was no problem in the operation of the IC element. The obtained multilayer wiring board was left in a high-temperature and high-humidity atmosphere at a humidity of 85% and a temperature of 85 ° C. for 100 hours, but no change that could be visually discriminated occurred.

【0036】[0036]

【発明の効果】以上詳述したとおり、本発明によれば、
電気素子を絶縁基板の内部に形成した空隙部に実装収納
することにより、転写フィルム上の銅箔から形成した配
線回路層に対して半導体素子や各種電子部品等の電気素
子を実装した後、空隙部を形成した絶縁層の表面に転写
して、電気素子を空隙部に収納することにより、電気素
子を絶縁基板内に内蔵させることができ、これにより多
層配線基板に積層一体化することにより高密度、高精
細、且つ多機能の配線基板を容易に形成できる。
As described in detail above, according to the present invention,
By mounting and housing the electric element in the gap formed inside the insulating substrate, the electric element such as a semiconductor element or various electronic components is mounted on the wiring circuit layer formed from the copper foil on the transfer film, and then the gap is formed. The electric element can be embedded in the insulating substrate by transferring the electric element to the surface of the insulating layer in which the portion has been formed, and housing the electric element in the gap portion. A high-density, high-definition, multifunctional wiring board can be easily formed.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の素子内蔵多層配線基板の製造方法の一
実施例を説明するための工程図である。
FIG. 1 is a process chart for explaining one embodiment of a method of manufacturing a multilayer wiring board with a built-in element according to the present invention.

【図2】本発明の素子内蔵多層配線基板において、電気
素子を内蔵した空隙部を複数形成した多層配線基板を説
明するための概略断面図である。
FIG. 2 is a schematic cross-sectional view for explaining a multilayer wiring board in which a plurality of voids containing electric elements are formed in the multilayer wiring board with a built-in element of the present invention.

【符号の説明】[Explanation of symbols]

1,7,8 絶縁シート 2,11,12 ビアホール導体 3,35,36,37 空隙部 4,9,10 配線回路層 5,33,34,37、38 電気素子 6 転写フィルム 13,31,32 絶縁基板 1,7,8 Insulating sheet 2,11,12 Via hole conductor 3,35,36,37 Air gap 4,9,10 Wiring circuit layer 5,33,34,37,38 Electric element 6 Transfer film 13,31,32 Insulating substrate

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】転写シートの表面に形成された配線回路層
に電気素子を実装する実装工程と、少なくとも熱硬化性
樹脂からなる第1の絶縁層にキャビティを形成するキャ
ビティ形成工程と、前記第1の絶縁層の前記キャビティ
内に前記電気素子が収納されるように、前記転写シート
から前記配線回路層と前記電気素子を前記第1の絶縁層
に転写する転写工程と、転写工程後の前記第1の絶縁層
の上下面に、少なくとも熱硬化性樹脂を含み、少なくと
も配線回路層が形成された第2および第3の絶縁層を積
層圧着する積層工程と、該積層物を一括して熱硬化させ
る工程と、を具備することを特徴とする素子内蔵多層配
線基板の製造方法。
A mounting step of mounting an electric element on a wiring circuit layer formed on a surface of a transfer sheet; a cavity forming step of forming a cavity in at least a first insulating layer made of a thermosetting resin; Transferring the wiring circuit layer and the electric element from the transfer sheet to the first insulating layer so that the electric element is housed in the cavity of the first insulating layer; and A laminating step of laminating and pressing at least the second and third insulating layers including at least a thermosetting resin on the upper and lower surfaces of the first insulating layer and having at least a wiring circuit layer formed thereon; A method of manufacturing a multilayer wiring board with a built-in element.
JP9201653A 1997-07-28 1997-07-28 Method of manufacturing multilayer wiring board with built-in element Expired - Fee Related JP3051700B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9201653A JP3051700B2 (en) 1997-07-28 1997-07-28 Method of manufacturing multilayer wiring board with built-in element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9201653A JP3051700B2 (en) 1997-07-28 1997-07-28 Method of manufacturing multilayer wiring board with built-in element

Publications (2)

Publication Number Publication Date
JPH1145955A JPH1145955A (en) 1999-02-16
JP3051700B2 true JP3051700B2 (en) 2000-06-12

Family

ID=16444669

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3051700B2 (en)

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* Cited by examiner, † Cited by third party
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WO2004014114A1 (en) * 2002-07-31 2004-02-12 Sony Corporation Method for manufacturing board with built-in device and board with built-in device, and method for manufacturing printed wiring board and printed wiring board

Families Citing this family (49)

* Cited by examiner, † Cited by third party
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JP3640560B2 (en) * 1999-02-22 2005-04-20 日本特殊陶業株式会社 Wiring board, core board with built-in capacitor, and manufacturing method thereof
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US6734534B1 (en) 2000-08-16 2004-05-11 Intel Corporation Microelectronic substrate with integrated devices
US20020020898A1 (en) 2000-08-16 2002-02-21 Vu Quat T. Microelectronic substrates with integrated devices
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US6586822B1 (en) 2000-09-08 2003-07-01 Intel Corporation Integrated core microelectronic package
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US6713859B1 (en) 2000-09-13 2004-03-30 Intel Corporation Direct build-up layer on an encapsulated die package having a moisture barrier structure
US6709898B1 (en) 2000-10-04 2004-03-23 Intel Corporation Die-in-heat spreader microelectronic package
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US6894399B2 (en) 2001-04-30 2005-05-17 Intel Corporation Microelectronic device having signal distribution functionality on an interfacial layer thereof
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