JP2878184B2 - 樹脂封止型半導体装置 - Google Patents

樹脂封止型半導体装置

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Publication number
JP2878184B2
JP2878184B2 JP8137226A JP13722696A JP2878184B2 JP 2878184 B2 JP2878184 B2 JP 2878184B2 JP 8137226 A JP8137226 A JP 8137226A JP 13722696 A JP13722696 A JP 13722696A JP 2878184 B2 JP2878184 B2 JP 2878184B2
Authority
JP
Japan
Prior art keywords
resin
semiconductor device
wire
metal
wires
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP8137226A
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English (en)
Other versions
JPH09321077A (ja
Inventor
隆博 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
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NEC Kyushu Ltd
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Priority to JP8137226A priority Critical patent/JP2878184B2/ja
Publication of JPH09321077A publication Critical patent/JPH09321077A/ja
Application granted granted Critical
Publication of JP2878184B2 publication Critical patent/JP2878184B2/ja
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Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は、樹脂封止型半導体
装置に関し、特に装置内に使用しているボンディングワ
イヤに関する。
【０００２】
【従来の技術】樹脂封止型半導体装置は、リードフレー
ムのアイランドに半導体ペレットを固着し、半導体ペレ
ットの端子とリードフレームのインナーリード間をボン
ディングワイヤで接続し、その後全体を封止樹脂で封止
することによって作られている。かかる半導体装置のボ
ンディングワイヤとしては、一般に金線が用いられてい
るが、金線は高価なのでコストの高いものとなる。コス
ト低減のため特開昭６２−６６６４３には、熱可塑性樹
脂と金属とで作ったボンディングワイヤを用いる樹脂封
止型半導体装置が示されている。
【０００３】図４には、特開昭６２−６６６４３で用い
ている熱可塑性樹脂と金属とで作ったボンディングワイ
ヤの例である。図４（ａ）のボンディングワイヤ２０
は、熱可塑性樹脂２１に金属粉末２２を混入したもので
あり、図４（ｂ）は、熱可塑性樹脂２３の表面に金属被
覆２４を形成したものであり、図４（ｃ）は、導電性を
有する樹脂線２５のまわりに絶縁性樹脂を被覆した例で
ある。このようなボンディングワイヤを使い、熱をかけ
ると軟化し、温度がさがると硬化する熱可塑性樹脂の特
性を生かしてワイヤボンディングして樹脂封止型半導体
装置を作っている。
【０００４】樹脂封止する場合には、インナリード，ボ
ンディングワイヤを含む半導体ペレットの周囲空間を金
型で囲み、この中に熱により溶かされた樹脂を注入す
る。このとき樹脂の注入圧力によりボンディングワイヤ
が変形することがある。このワイヤ変形が生じると、隣
接するワイヤとのショートが発生し、電気的絶縁性を保
てなくなる。
【０００５】
【発明が解決しようとする課題】上述した従来技術は熱
可塑性樹脂を使用していたため、樹脂封止工程でワイヤ
流れが発生することである。その理由は、熱可塑性樹脂
は熱をかけると軟化するためにワイヤが流れやすくなる
ためである。このようなワイヤ流れが発生すると、隣接
リードとショートし電気絶縁性が保てなくなる欠点があ
る。
【０００６】本発明の目的は、樹脂封止時のワイヤ変形
を低減することにより、ワイヤ間の電気的絶縁性を保
ち、信頼性を向上するとともに、金使用量を低減した樹
脂封止型半導体装置を提供することである。
【０００７】
【課題を解決するための手段】本発明の樹脂封止型半導
体装置は、半導体ペレットとリードフレームのインナリ
ードを接続するボンディングワイヤとして、熱硬化性樹
脂を含む金属線を用いたことを特徴とする。熱硬化性樹
脂を含む金属線としては、熱硬化性樹脂の外周を金属で
被覆したものや、金属線の内部に複数本の熱硬化性樹脂
線を含ませたものを用いることができる。
【０００８】本発明のボンディングワイヤは、熱硬化性
樹脂を含んでいるために、樹脂封止時の熱によりボンデ
ィングワイヤが硬化する。このため、ボンディングワイ
ヤの保持力がまし、ワイヤ流れを低減することができ
る。
【０００９】
【発明の実施の形態】次に本発明について図面を参照し
て詳細に説明する。図１は、本発明の樹脂封止型半導体
装置の一実施の形態を示す断面図である。アイランド２
上に半導体ペレット１が固着され、半導体ペレット１の
端子とリードフレーム３の間はボンディングワイヤ５で
接続されている。
【００１０】図２は、本発明に用いているボンディング
ワイヤの断面図であり、図２（ａ）では、熱硬化性樹脂
７を核とし、周囲を金，アルミニウム等の金属被覆６で
覆っている。図２（ｂ）では、金属線８の中に、熱硬化
性樹脂７の細線を複数本含んでいる構造である。
【００１１】図３（ａ）〜（ｃ）は、本発明のボンディ
ングワイヤを用いて樹脂封止型半導体装置を製造する工
程を示す図である。まず、図３（ａ）に示すようにリー
ドフレーム３のアイランド２に半導体ペレット１を固着
する。次に図３（ｂ）のように、半導体ペレット１の端
子とリードフレーム３のインナーリードとを電気的に接
続する。本発明のボンディングワイヤ５は、表面は従来
のボンディングワイヤと同じであるため従来の技術でワ
イヤリングできる。次に図３（ｃ）に示すように、全体
を封止樹脂４で封止する。本発明のボンディングワイヤ
は、この封止金型の熱により溶化した樹脂の熱によって
も硬化する。この熱硬化性樹脂の硬化によりボンディン
グワイヤ５の保持力が向上し、封止時のボンディングワ
イヤ流れが低減できる。
【００１２】
【発明の効果】本発明の第１の効果は、樹脂封止時のワ
イヤ流れを低減することができることである。これによ
り、信頼性向上ができるようになる。その理由は、ワイ
ヤに熱硬化性樹脂を有することにより、封止時のワイヤ
の保持力が向上するためである。また、第２の効果は、
ワイヤの一部に熱硬化性樹脂を有することである。これ
により、コストダウンが可能となる。その理由は、ワイ
ヤに使用されている金は、熱硬化性樹脂より高価である
ためである。
【図面の簡単な説明】
【図１】本発明の一実施の形態の半導体装置の断面図で
ある。
【図２】（ａ），（ｂ）は、本発明のボンディングワイ
ヤの斜視図である。
【図３】（ａ）〜（ｃ）は、本発明の製造工程図であ
る。
【図４】（ａ）〜（ｃ）は、従来のボンディングワイヤ
の斜視図である。
【符号の説明】
１ 半導体ペレット ２ アイランド ３ リードフレーム ４ 封止樹脂 ５ ボンディングワイヤ ６ 金属被覆 ７ 熱硬化性樹脂 ８ 金属線

Claims (2)

    (57)【特許請求の範囲】
  1. 【請求項１】 半導体ペレットとリードフレームを電気
    的に接続するボンディングワイヤに熱硬化性樹脂を含む
    金属線を用いる樹脂封止型半導体装置において、前記熱
    硬化性樹脂を含む金属線は、熱硬化性樹脂を金属で被覆
    した線であることを特徴とする樹脂封止型半導体装置。
  2. 【請求項２】 半導体ペレットとリードフレームを電気
    的に接続するボンディングワイヤに熱硬化性樹脂を含む
    金属線を用いる樹脂封止型半導体装置において、前記熱
    硬化性樹脂を含む金属線は、金属線内に複数本の熱硬化
    性樹脂の細線を含んでいる線であることを特徴とする樹
    脂封止型半導体装置。
JP8137226A 1996-05-30 1996-05-30 樹脂封止型半導体装置 Expired - Lifetime JP2878184B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8137226A JP2878184B2 (ja) 1996-05-30 1996-05-30 樹脂封止型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8137226A JP2878184B2 (ja) 1996-05-30 1996-05-30 樹脂封止型半導体装置

Publications (2)

Publication Number Publication Date
JPH09321077A JPH09321077A (ja) 1997-12-12
JP2878184B2 true JP2878184B2 (ja) 1999-04-05

Family

ID=15193737

Family Applications (1)

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Country Status (1)

Country Link
JP (1) JP2878184B2 (ja)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6266643A (ja) * 1985-09-19 1987-03-26 Matsushita Electric Ind Co Ltd 半導体装置
JPH0621136A (ja) * 1992-07-03 1994-01-28 Seiko Epson Corp ボンディングワイヤーの構造
JPH0766234A (ja) * 1993-08-27 1995-03-10 Tanaka Denshi Kogyo Kk 半導体素子用複合ボンディングワイヤおよび半導体装置

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Publication number Publication date
JPH09321077A (ja) 1997-12-12

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