JP2866453B2 - エキスパンドテープ及びチップ部品の実装方法 - Google Patents
エキスパンドテープ及びチップ部品の実装方法Info
- Publication number
- JP2866453B2 JP2866453B2 JP2176848A JP17684890A JP2866453B2 JP 2866453 B2 JP2866453 B2 JP 2866453B2 JP 2176848 A JP2176848 A JP 2176848A JP 17684890 A JP17684890 A JP 17684890A JP 2866453 B2 JP2866453 B2 JP 2866453B2
- Authority
- JP
- Japan
- Prior art keywords
- tape
- preform layer
- chip
- wafer
- preform
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- Engineering & Computer Science (AREA)
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- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Dicing (AREA)
- Die Bonding (AREA)
Description
【発明の詳細な説明】 (イ)産業上の利用分野 この発明は、半導体ウェハのダイシング時に用いられ
るエキスパンドテープ及びチップ部品の実装方法に関す
る。
るエキスパンドテープ及びチップ部品の実装方法に関す
る。
(ロ)従来の技術 従来、半導体ウェハのダイシング時には、エキスパン
ドテープが使用される。このエキスパンドテープは、展
伸性を有する合成樹脂フィルムよりなり、第3図(a)
に示すように、その表面11aにウェハ14をはりつける。
この状態で、ウェハ14をダイシングし〔第3図(b)参
照〕、エキスパンドテープ11を引き伸ばすと、ウェハ14
がチップ15,…,15に分離する〔第3図(c)参照〕。こ
れらチップ15は、次のダイボンディング工程で、プリフ
ォーム材(例えば銀やはんだのペースト)を用いて、リ
ードフレーム等にダイボンディングされる。
ドテープが使用される。このエキスパンドテープは、展
伸性を有する合成樹脂フィルムよりなり、第3図(a)
に示すように、その表面11aにウェハ14をはりつける。
この状態で、ウェハ14をダイシングし〔第3図(b)参
照〕、エキスパンドテープ11を引き伸ばすと、ウェハ14
がチップ15,…,15に分離する〔第3図(c)参照〕。こ
れらチップ15は、次のダイボンディング工程で、プリフ
ォーム材(例えば銀やはんだのペースト)を用いて、リ
ードフレーム等にダイボンディングされる。
(ハ)発明が解決しようとする課題 上記従来のエキスパンドテープを用いるダイシング工
程は、ダイボンディング工程とは別個のものであり、工
程数が多くなり、それだけ人員も必要となる問題があっ
た。一方、エキスパンドテープとは別にプリフォーム材
を管理する手間が必要である問題点もあった。
程は、ダイボンディング工程とは別個のものであり、工
程数が多くなり、それだけ人員も必要となる問題があっ
た。一方、エキスパンドテープとは別にプリフォーム材
を管理する手間が必要である問題点もあった。
この発明は、上記に鑑みなされたもので、工程を簡略
化し、また材料管理の手間が省けるエキスパンドテープ
及びチップ部品の実装方法の提供を目的としている。
化し、また材料管理の手間が省けるエキスパンドテープ
及びチップ部品の実装方法の提供を目的としている。
(ニ)課題を解決するための手段及び作用 上記課題を解決するため、この発明のエキスパンドテ
ープは、ウェハのダイシング後に引き伸ばすことを前提
とするエキスパンドテープであって、展伸性を有するフ
ィルム上に、はんだ材としてのプリフォーム層を形成し
てなるものであり、ウェハをはりつけダイシングを行っ
た後、テープを引き伸ばしてチップをプリフォーム層と
共に分離してからチップをテープ上より取り上げた時、
チップ底面にプリフォーム層が付着した状態となってい
る。
ープは、ウェハのダイシング後に引き伸ばすことを前提
とするエキスパンドテープであって、展伸性を有するフ
ィルム上に、はんだ材としてのプリフォーム層を形成し
てなるものであり、ウェハをはりつけダイシングを行っ
た後、テープを引き伸ばしてチップをプリフォーム層と
共に分離してからチップをテープ上より取り上げた時、
チップ底面にプリフォーム層が付着した状態となってい
る。
従って、そのまま直ちにリードフレーム等にダイボン
ディングすることができ、工程の簡略化及び人員の削減
を図ることができる。又、プリフォーム層がエキスパン
ドテープと一体となっているから、材料管理の手間が省
ける。
ディングすることができ、工程の簡略化及び人員の削減
を図ることができる。又、プリフォーム層がエキスパン
ドテープと一体となっているから、材料管理の手間が省
ける。
一方、この発明のチップ部品の実装方法は、展伸性を
有するフィルム上にはんだ材としてのプリフォーム層を
形成してなるエキスパンドテープのプリフォーム層上に
ウェハを設け、次にウェハをプリフォーム層と一緒に個
々のチップに切断し、更にエキスパンドテープを延伸方
向に引き伸ばしてチップをプリフォーム層と共に個々に
分離した後、それぞれプリフォーム層が底面に付着した
各チップをピックアップし、そのプリフォーム層により
チップを実装対象物にダイボンディングすることを特徴
とする。
有するフィルム上にはんだ材としてのプリフォーム層を
形成してなるエキスパンドテープのプリフォーム層上に
ウェハを設け、次にウェハをプリフォーム層と一緒に個
々のチップに切断し、更にエキスパンドテープを延伸方
向に引き伸ばしてチップをプリフォーム層と共に個々に
分離した後、それぞれプリフォーム層が底面に付着した
各チップをピックアップし、そのプリフォーム層により
チップを実装対象物にダイボンディングすることを特徴
とする。
(ホ)実施例 この発明の一実施例を第1図及び第2図を用いて以下
に説明する。
に説明する。
第1図は、実施例に係るエキスパンドテープ1の断面
を示している。このエキスパンドテープ1は、展伸性を
有する合成樹脂フィルム2上に、はんだ材としてのプリ
フォーム層3を形成してなるものである。プリフォーム
層3は、例えば銀ペーストやはんだペーストを塗布して
形成される。
を示している。このエキスパンドテープ1は、展伸性を
有する合成樹脂フィルム2上に、はんだ材としてのプリ
フォーム層3を形成してなるものである。プリフォーム
層3は、例えば銀ペーストやはんだペーストを塗布して
形成される。
第2図(a)〜(d)は、この実施例に係るエキスパ
ンドテープ1を用いたチップ部品の実装方法におけるダ
イシング工程を順に示す図である。まず、エキスパンド
テープ1のプリフォーム層3上にウェハ4がはりつけら
れる〔第2図(a)参照〕。次に、ダイシングソウ(図
示せず)を用いてウェハ4をチップ5,…,5に切断する。
この時、ダイシング溝6,…,6の深さは、フィルム2に達
するようにして、プリフォーム層3も切断されるように
する〔第2図(b)参照〕。
ンドテープ1を用いたチップ部品の実装方法におけるダ
イシング工程を順に示す図である。まず、エキスパンド
テープ1のプリフォーム層3上にウェハ4がはりつけら
れる〔第2図(a)参照〕。次に、ダイシングソウ(図
示せず)を用いてウェハ4をチップ5,…,5に切断する。
この時、ダイシング溝6,…,6の深さは、フィルム2に達
するようにして、プリフォーム層3も切断されるように
する〔第2図(b)参照〕。
この状態でエキスパンドテープ1に引張力を加えて伸
ばすと、チップ5,…,5が分離する〔第2図(c)参
照〕。この時、プリフォーム層3もチップ5,…,5と共に
3a,…,3aに分離する。
ばすと、チップ5,…,5が分離する〔第2図(c)参
照〕。この時、プリフォーム層3もチップ5,…,5と共に
3a,…,3aに分離する。
分離されたチップ5は、第2図(d)に示すように、
コレット7で吸着しピックアップする。この時、チップ
5底面に、分割されたプリフォーム層3aが付着してい
る。このため、直ちにチップ5をリードフレーム層にダ
イボンディングすることができ、工程の簡略化を図るこ
とができる。
コレット7で吸着しピックアップする。この時、チップ
5底面に、分割されたプリフォーム層3aが付着してい
る。このため、直ちにチップ5をリードフレーム層にダ
イボンディングすることができ、工程の簡略化を図るこ
とができる。
(ヘ)発明の効果 以上説明したように、この発明のエキスパンドテープ
は、ウェハのダイシング後に引き伸ばすことを前提とす
るものであり、展伸性を有するフィルム上に、はんだ材
としてのプリフォーム層を形成してなることで、ウェハ
をはりつけダイシングを行った後、テープを引き伸ばし
てチップをプリフォーム層と共に分離してからチップを
テープより取り上げれば、チップ底面にはんだ材として
のプリフォーム層が付着した状態になるので、はんだを
使用せずにそのまま直ちにリードフレーム等にダイボン
ディングすることが可能となり、工程の簡略化及び人員
の削減を図ることができると共に、プリフォーム材の管
理の手間を省くことができる。
は、ウェハのダイシング後に引き伸ばすことを前提とす
るものであり、展伸性を有するフィルム上に、はんだ材
としてのプリフォーム層を形成してなることで、ウェハ
をはりつけダイシングを行った後、テープを引き伸ばし
てチップをプリフォーム層と共に分離してからチップを
テープより取り上げれば、チップ底面にはんだ材として
のプリフォーム層が付着した状態になるので、はんだを
使用せずにそのまま直ちにリードフレーム等にダイボン
ディングすることが可能となり、工程の簡略化及び人員
の削減を図ることができると共に、プリフォーム材の管
理の手間を省くことができる。
第1図は、この発明の一実施例に係るエキスパンドテー
プの要部断面図、第2図(a)、第2図(b)、第2図
(c)及び第2図(d)は、それぞれ順に同エキスパン
ドテープを用いたチップ部品の実装方法におけるダイシ
ング工程を説明する図、第3図(a)、第3図(b)及
び第3図(c)は、それぞれ順に従来のエキスパンドテ
ープを用いたダイシング工程を説明する図である。 1:エキスパンドテープ、2:フィルム、 3:プリフォーム層、4:ウェハ、 5:チップ。
プの要部断面図、第2図(a)、第2図(b)、第2図
(c)及び第2図(d)は、それぞれ順に同エキスパン
ドテープを用いたチップ部品の実装方法におけるダイシ
ング工程を説明する図、第3図(a)、第3図(b)及
び第3図(c)は、それぞれ順に従来のエキスパンドテ
ープを用いたダイシング工程を説明する図である。 1:エキスパンドテープ、2:フィルム、 3:プリフォーム層、4:ウェハ、 5:チップ。
Claims (2)
- 【請求項1】ウェハのダイシング後に引き伸ばすことを
前提とするエキスパンドテープであって、展伸性を有す
るフィルム上に、はんだ材としてのプリフォーム層を形
成してなるエキスパンドテープ。 - 【請求項2】展伸性を有するフィルム上にはんだ材とし
てのプリフォーム層を形成してなるエキスパンドテープ
のプリフォーム層上にウェハを設け、次にウェハをプリ
フォーム層と一緒に個々のチップに切断し、更にエキス
パンドテープを延伸方向に引き伸ばしてチップをプリフ
ォーム層と共に個々に分離した後、それぞれプリフォー
ム層が底面に付着した各チップをピックアップし、その
プリフォーム層によりチップを実装対象物にダイボンデ
ィングすることを特徴とするチップ部品の実装方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2176848A JP2866453B2 (ja) | 1990-07-04 | 1990-07-04 | エキスパンドテープ及びチップ部品の実装方法 |
US07/816,398 US5316853A (en) | 1990-07-04 | 1991-12-27 | Expand tape |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2176848A JP2866453B2 (ja) | 1990-07-04 | 1990-07-04 | エキスパンドテープ及びチップ部品の実装方法 |
US07/816,398 US5316853A (en) | 1990-07-04 | 1991-12-27 | Expand tape |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0464250A JPH0464250A (ja) | 1992-02-28 |
JP2866453B2 true JP2866453B2 (ja) | 1999-03-08 |
Family
ID=26497614
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2176848A Expired - Fee Related JP2866453B2 (ja) | 1990-07-04 | 1990-07-04 | エキスパンドテープ及びチップ部品の実装方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US5316853A (ja) |
JP (1) | JP2866453B2 (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5962815A (en) | 1995-01-18 | 1999-10-05 | Prolinx Labs Corporation | Antifuse interconnect between two conducting layers of a printed circuit board |
US6007920A (en) * | 1996-01-22 | 1999-12-28 | Texas Instruments Japan, Ltd. | Wafer dicing/bonding sheet and process for producing semiconductor device |
MY118036A (en) * | 1996-01-22 | 2004-08-30 | Lintec Corp | Wafer dicing/bonding sheet and process for producing semiconductor device |
JP3955659B2 (ja) * | 1997-06-12 | 2007-08-08 | リンテック株式会社 | 電子部品のダイボンディング方法およびそれに使用されるダイボンディング装置 |
US6383606B2 (en) | 1999-02-02 | 2002-05-07 | Michelle Broyles | Semiconductor wafer diaphragm |
JP2004273895A (ja) * | 2003-03-11 | 2004-09-30 | Disco Abrasive Syst Ltd | 半導体ウエーハの分割方法 |
JP3933118B2 (ja) * | 2003-10-02 | 2007-06-20 | ソニー株式会社 | 半導体装置の製造方法および半導体装置の製造装置 |
US7135385B1 (en) | 2004-04-23 | 2006-11-14 | National Semiconductor Corporation | Semiconductor devices having a back surface protective coating |
US7015064B1 (en) | 2004-04-23 | 2006-03-21 | National Semiconductor Corporation | Marking wafers using pigmentation in a mounting tape |
US7101620B1 (en) | 2004-09-07 | 2006-09-05 | National Semiconductor Corporation | Thermal release wafer mount tape with B-stage adhesive |
US7750196B2 (en) * | 2006-06-08 | 2010-07-06 | Chevron U.S.A. Inc. | Oxygenate conversion using molecular sieve SSZ-75 |
US8030138B1 (en) | 2006-07-10 | 2011-10-04 | National Semiconductor Corporation | Methods and systems of packaging integrated circuits |
JP2008235398A (ja) * | 2007-03-19 | 2008-10-02 | Disco Abrasive Syst Ltd | デバイスの製造方法 |
KR100828025B1 (ko) * | 2007-06-13 | 2008-05-08 | 삼성전자주식회사 | 웨이퍼 절단 방법 |
US7749809B2 (en) * | 2007-12-17 | 2010-07-06 | National Semiconductor Corporation | Methods and systems for packaging integrated circuits |
US8048781B2 (en) * | 2008-01-24 | 2011-11-01 | National Semiconductor Corporation | Methods and systems for packaging integrated circuits |
US8828804B2 (en) * | 2008-04-30 | 2014-09-09 | Infineon Technologies Ag | Semiconductor device and method |
US20100015329A1 (en) * | 2008-07-16 | 2010-01-21 | National Semiconductor Corporation | Methods and systems for packaging integrated circuits with thin metal contacts |
EP3216049B1 (de) * | 2014-11-05 | 2021-06-16 | EV Group E. Thallner GmbH | Verfahren und vorrichtung zum beschichten eines produktsubstrats |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5029280A (ja) * | 1973-07-20 | 1975-03-25 | ||
US4626474A (en) * | 1985-06-21 | 1986-12-02 | Stauffer Chemical Company | Polyimide film/metal foil lamination |
US4780371A (en) * | 1986-02-24 | 1988-10-25 | International Business Machines Corporation | Electrically conductive composition and use thereof |
US4847136A (en) * | 1988-03-21 | 1989-07-11 | Hughes Aircraft Company | Thermal expansion mismatch forgivable printed wiring board for ceramic leadless chip carrier |
JP2626033B2 (ja) * | 1989-03-13 | 1997-07-02 | 富士通株式会社 | 半導体装置の製造方法 |
US5043102A (en) * | 1989-11-29 | 1991-08-27 | Advanced Products, Inc. | Conductive adhesive useful for bonding a semiconductor die to a conductive support base |
JPH0458546A (ja) * | 1990-06-28 | 1992-02-25 | Nec Corp | 半導体ウェーハの切断方法 |
-
1990
- 1990-07-04 JP JP2176848A patent/JP2866453B2/ja not_active Expired - Fee Related
-
1991
- 1991-12-27 US US07/816,398 patent/US5316853A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5316853A (en) | 1994-05-31 |
JPH0464250A (ja) | 1992-02-28 |
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