JP2802753B2 - 双方向転送可能な水平方向電荷転送デバイス - Google Patents

双方向転送可能な水平方向電荷転送デバイス

Info

Publication number
JP2802753B2
JP2802753B2 JP8289016A JP28901696A JP2802753B2 JP 2802753 B2 JP2802753 B2 JP 2802753B2 JP 8289016 A JP8289016 A JP 8289016A JP 28901696 A JP28901696 A JP 28901696A JP 2802753 B2 JP2802753 B2 JP 2802753B2
Authority
JP
Japan
Prior art keywords
poly
charge transfer
gates
gate
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP8289016A
Other languages
English (en)
Japanese (ja)
Other versions
JPH09275207A (ja
Inventor
ジ・ソン・ユン
イル・ナム・ホアン
Original Assignee
エルジイ・セミコン・カンパニイ・リミテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エルジイ・セミコン・カンパニイ・リミテッド filed Critical エルジイ・セミコン・カンパニイ・リミテッド
Publication of JPH09275207A publication Critical patent/JPH09275207A/ja
Application granted granted Critical
Publication of JP2802753B2 publication Critical patent/JP2802753B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14825—Linear CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/76841—Two-Phase CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Gas-Insulated Switchgears (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP8289016A 1996-04-03 1996-10-14 双方向転送可能な水平方向電荷転送デバイス Expired - Fee Related JP2802753B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10070/1996 1996-04-03
KR1019960010070A KR100192328B1 (ko) 1996-04-03 1996-04-03 양방향 수평전하 전송소자

Publications (2)

Publication Number Publication Date
JPH09275207A JPH09275207A (ja) 1997-10-21
JP2802753B2 true JP2802753B2 (ja) 1998-09-24

Family

ID=19454993

Family Applications (2)

Application Number Title Priority Date Filing Date
JP8289016A Expired - Fee Related JP2802753B2 (ja) 1996-04-03 1996-10-14 双方向転送可能な水平方向電荷転送デバイス
JP9109474A Pending JPH1070804A (ja) 1996-04-03 1997-04-25 ガス絶縁開閉装置の断路器／接地開閉器ユニット

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP9109474A Pending JPH1070804A (ja) 1996-04-03 1997-04-25 ガス絶縁開閉装置の断路器／接地開閉器ユニット

Country Status (6)

Country Link
US (2) US5773324A (id)
JP (2) JP2802753B2 (id)
KR (1) KR100192328B1 (id)
CN (1) CN1084068C (id)
DE (1) DE19620641C1 (id)
ID (1) ID16691A (id)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2874665B2 (ja) * 1996-09-27 1999-03-24 日本電気株式会社 電荷転送装置の製造方法
US6300160B1 (en) * 1999-11-18 2001-10-09 Eastman Kodak Company Process for charge coupled image sensor with U-shaped gates
WO2002060027A1 (fr) * 2001-01-26 2002-08-01 Hitachi, Ltd. Appareillage de commutation isole par du gaz
KR100625412B1 (ko) * 2001-12-21 2006-09-19 현대중공업 주식회사 가스 절연 배전반의 3단 개폐장치
EP1569254A1 (de) * 2004-02-27 2005-08-31 ABB Technology AG Schaltgerät mit Trenn-und/oder Erdungsfunktion
US7893981B2 (en) * 2007-02-28 2011-02-22 Eastman Kodak Company Image sensor with variable resolution and sensitivity
KR100966446B1 (ko) * 2008-03-10 2010-06-28 엘에스산전 주식회사 가스절연개폐장치의 접지개폐기
DE102009036590B3 (de) * 2009-08-07 2011-03-31 Abb Technology Ag Gasisolierte Hochspannungsschaltanlage
JP5433360B2 (ja) * 2009-09-18 2014-03-05 株式会社東芝 ガス絶縁開閉装置
KR101628872B1 (ko) 2014-05-28 2016-06-09 주식회사 레고켐 바이오사이언스 자가-희생 기를 포함하는 화합물

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3735156A (en) * 1971-06-28 1973-05-22 Bell Telephone Labor Inc Reversible two-phase charge coupled devices
US3947863A (en) * 1973-06-29 1976-03-30 Motorola Inc. Charge coupled device with electrically settable shift direction
DE2500909A1 (de) * 1975-01-11 1976-07-15 Siemens Ag Verfahren zum betrieb einer ladungsverschiebeanordnung nach dem charge-coupled-device-prinzip (bccd)
US4087832A (en) * 1976-07-02 1978-05-02 International Business Machines Corporation Two-phase charge coupled device structure
US4242692A (en) * 1978-06-02 1980-12-30 Sony Corporation Charge transfer device which has a pair of straight portions joined by a direction changing portion
JPS6155962A (ja) * 1984-08-27 1986-03-20 Oki Electric Ind Co Ltd 電荷結合素子
JP2570464B2 (ja) * 1990-05-08 1997-01-08 日本電気株式会社 電荷転送装置の電荷検出回路
JPH04133336A (ja) * 1990-09-25 1992-05-07 Mitsubishi Electric Corp 電荷転送装置
KR940009601B1 (ko) * 1991-09-14 1994-10-15 금성일렉트론 주식회사 전하전송장치의 제조방법
KR940010932B1 (ko) * 1991-12-23 1994-11-19 금성일렉트론주식회사 Ccd영상소자 제조방법
US5314836A (en) * 1992-09-15 1994-05-24 Eastman Kodak Company Method of making a single electrode level CCD
KR970010687B1 (ko) * 1993-11-05 1997-06-30 엘지반도체 주식회사 쌍방형 전하결합소자
US5637891A (en) * 1994-12-08 1997-06-10 Goldstar Electron Co., Ltd. Charge coupled device having different insulators
JPH08204173A (ja) * 1995-01-25 1996-08-09 Sony Corp 電荷転送装置の製造方法

Also Published As

Publication number Publication date
US5773324A (en) 1998-06-30
KR970072475A (ko) 1997-11-07
US6078069A (en) 2000-06-20
JPH09275207A (ja) 1997-10-21
JPH1070804A (ja) 1998-03-10
ID16691A (id) 1997-10-30
DE19620641C1 (de) 1997-07-10
CN1084068C (zh) 2002-05-01
KR100192328B1 (ko) 1999-06-15
CN1168556A (zh) 1997-12-24

Similar Documents

Publication Publication Date Title
US5086010A (en) Method for manufacturing solid state image sensing device formed of charge coupled devices on side surfaces of trenches
JP2802753B2 (ja) 双方向転送可能な水平方向電荷転送デバイス
US5289022A (en) CCD shift register having a plurality of storage regions and transfer regions therein
US4878102A (en) Charge-coupled device
JPH08181300A (ja) 撮像デバイス
US5902995A (en) CCD image sensor with overflow barrier for discharging excess electrons at high speed
US5892251A (en) Apparatus for transferring electric charges
EP0161023B1 (en) Charge-coupled semiconductor device with dynamic control
JPH07161970A (ja) 固体撮像装置
US5502318A (en) Bipolar gate charge coupled device with clocked virtual phase
JP2816063B2 (ja) 電荷転送装置
US5442208A (en) Charge-coupled device having charge reset
JPH07106553A (ja) 固体撮像素子
CA1241418A (en) Radiation-sensitive semiconductor device
US6100553A (en) Solid-state image sensor and a method for fabricating the same
US5741728A (en) Method for manufacturing charge-coupled device with polygates having the same resistances
JPH0661469A (ja) Ｃｃｄ映像素子
JP3105781B2 (ja) 固体撮像装置
US6242768B1 (en) Charge coupled device and a driving method thereof
US5986295A (en) Charge coupled device
US6218686B1 (en) Charge coupled devices
US6107124A (en) Charge coupled device and method of fabricating the same
KR100198638B1 (ko) 고체 촬상 소자
JP2560984B2 (ja) 電荷転送型固体撮像装置の撮像部とその駆動方法
JP3152920B2 (ja) 電荷転送装置およびその製造方法

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S631 Written request for registration of reclamation of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313631

S633 Written request for registration of reclamation of name

Free format text: JAPANESE INTERMEDIATE CODE: R313633

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R371 Transfer withdrawn

Free format text: JAPANESE INTERMEDIATE CODE: R371

S631 Written request for registration of reclamation of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313631

S633 Written request for registration of reclamation of name

Free format text: JAPANESE INTERMEDIATE CODE: R313633

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R371 Transfer withdrawn

Free format text: JAPANESE INTERMEDIATE CODE: R371

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20070717

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080717

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080717

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090717

Year of fee payment: 11

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090717

Year of fee payment: 11

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090717

Year of fee payment: 11

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100717

Year of fee payment: 12

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R371 Transfer withdrawn

Free format text: JAPANESE INTERMEDIATE CODE: R371

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100717

Year of fee payment: 12

S633 Written request for registration of reclamation of name

Free format text: JAPANESE INTERMEDIATE CODE: R313633

R371 Transfer withdrawn

Free format text: JAPANESE INTERMEDIATE CODE: R371

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100717

Year of fee payment: 12

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100717

Year of fee payment: 12

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100717

Year of fee payment: 12

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110717

Year of fee payment: 13

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110717

Year of fee payment: 13

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120717

Year of fee payment: 14

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130717

Year of fee payment: 15

LAPS Cancellation because of no payment of annual fees