JP2722536B2 - 不揮発性メモリのアドレスデコーダ回路 - Google Patents

不揮発性メモリのアドレスデコーダ回路

Info

Publication number
JP2722536B2
JP2722536B2 JP26018988A JP26018988A JP2722536B2 JP 2722536 B2 JP2722536 B2 JP 2722536B2 JP 26018988 A JP26018988 A JP 26018988A JP 26018988 A JP26018988 A JP 26018988A JP 2722536 B2 JP2722536 B2 JP 2722536B2
Authority
JP
Japan
Prior art keywords
terminal
mos transistor
potential
address decoder
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP26018988A
Other languages
English (en)
Japanese (ja)
Other versions
JPH02108293A (ja
Inventor
秀貴 荒川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP26018988A priority Critical patent/JP2722536B2/ja
Priority to GB8923058A priority patent/GB2226727B/en
Priority to US07/421,144 priority patent/US5039882A/en
Priority to DE3934303A priority patent/DE3934303C2/de
Priority to KR1019890014724A priority patent/KR0147369B1/ko
Publication of JPH02108293A publication Critical patent/JPH02108293A/ja
Priority to US07/697,205 priority patent/US5099143A/en
Application granted granted Critical
Publication of JP2722536B2 publication Critical patent/JP2722536B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
JP26018988A 1988-10-15 1988-10-15 不揮発性メモリのアドレスデコーダ回路 Expired - Fee Related JP2722536B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP26018988A JP2722536B2 (ja) 1988-10-15 1988-10-15 不揮発性メモリのアドレスデコーダ回路
GB8923058A GB2226727B (en) 1988-10-15 1989-10-13 Address decoder circuits for non-volatile memories
US07/421,144 US5039882A (en) 1988-10-15 1989-10-13 Address decoder circuit for non-volatile memory
DE3934303A DE3934303C2 (de) 1988-10-15 1989-10-13 Adreßdecoder für nichtflüchtige Speicher
KR1019890014724A KR0147369B1 (ko) 1988-10-15 1989-10-14 비휘발성 메모리의 어드레스 디코더 회로
US07/697,205 US5099143A (en) 1988-10-15 1991-05-08 Dual voltage supply circuit with multiplier-controlled transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26018988A JP2722536B2 (ja) 1988-10-15 1988-10-15 不揮発性メモリのアドレスデコーダ回路

Publications (2)

Publication Number Publication Date
JPH02108293A JPH02108293A (ja) 1990-04-20
JP2722536B2 true JP2722536B2 (ja) 1998-03-04

Family

ID=17344566

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26018988A Expired - Fee Related JP2722536B2 (ja) 1988-10-15 1988-10-15 不揮発性メモリのアドレスデコーダ回路

Country Status (2)

Country Link
JP (1) JP2722536B2 (ko)
KR (1) KR0147369B1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05174588A (ja) * 1991-12-19 1993-07-13 Nec Corp 不揮発性半導体記憶装置のデータ消去方法
JP2000048563A (ja) * 1998-07-30 2000-02-18 Nec Corp 半導体メモリ
KR20210030516A (ko) 2019-08-28 2021-03-18 노영규 흡입력을 이용한 필터링에 의한 식물성분 추출 장치

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5647992A (en) * 1979-09-27 1981-04-30 Toshiba Corp Nonvolatile semiconductor memory
JPS6061996A (ja) * 1983-09-14 1985-04-09 Toshiba Corp 不揮発性メモリのアドレスデコ−ダ回路
JPS6145496A (ja) * 1984-08-08 1986-03-05 Fujitsu Ltd デコ−ダ回路

Also Published As

Publication number Publication date
KR900007112A (ko) 1990-05-09
JPH02108293A (ja) 1990-04-20
KR0147369B1 (ko) 1998-08-01

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