JP2575163B2 - 半導体素子のボンディング用被覆線 - Google Patents

半導体素子のボンディング用被覆線

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Publication number
JP2575163B2
JP2575163B2 JP62328010A JP32801087A JP2575163B2 JP 2575163 B2 JP2575163 B2 JP 2575163B2 JP 62328010 A JP62328010 A JP 62328010A JP 32801087 A JP32801087 A JP 32801087A JP 2575163 B2 JP2575163 B2 JP 2575163B2
Authority
JP
Japan
Prior art keywords
wire
semiconductor devices
coated wire
coated
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62328010A
Other languages
English (en)
Other versions
JPH01168036A (ja
Inventor
信次 白川
祐人 伊賀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP62328010A priority Critical patent/JP2575163B2/ja
Publication of JPH01168036A publication Critical patent/JPH01168036A/ja
Application granted granted Critical
Publication of JP2575163B2 publication Critical patent/JP2575163B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/4569—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は半導体素子のチップ電極と外部リードを接続
する導線として用いられる被覆線に関する。
（従来の技術） 半導体デバイスが高密度化・高集積化するに従い、ボ
ンディングワイヤは狭い面積に多数ワイヤボンディング
されることになる。その結果、従来から使われているボ
ンディングワイヤ（例えば金線，アルミニウム線，銅線
等）ではデバイスを樹脂封止するときのボンディングワ
イヤ同士が接触して電気的に短絡しやすくなる。このよ
うな点を改善するものとして、エナメル被覆線やポリウ
レタン被覆線（特開昭61−19473号）等がある。また、
ボンディングワイヤはその表面に酸化膜が出来るとボン
ダビリティーが悪くなる。
前述の被覆線はアルミニウム線，銅線等，線表面に酸
化膜ができやすいボンディングワイヤに比べてボンダビ
リティーを悪化させることがないという利点も合わせ持
っている。
（発明が解決しようとする問題点） ところで、斯くの如き利点を有するエナメル被覆線や
ポリウレタン被覆線においても次の問題を抱えている。
ボール形成時に樹脂の炭化物が残ったり、キャピラリ
ー内面との滑りが悪くて詰ったり、異物を発生させたり
するなど、被覆樹脂が原因となるボンダビリティーの問
題がある。
そこで本発明者は被覆樹脂に注目し、線の酸化防止
と絶縁、ボールを形成する手段として用いる電気アー
クを利用して積極的に還元性雰囲気をつくって酸化物を
除去する、炭化物が形成されない、摩擦係数が小さ
く潤滑性に富む、などの諸特性全てが満たされる被覆樹
脂を検討した。
そして本発明者は、摩擦係数が小さくて潤滑性に富む
弗素樹脂に着目し検討した結果、〜の各項が満足さ
れることを突きとめたが、項の絶縁性の問題が以前と
して解決されずに残り、さらに第２ボンドで不圧着を
起こすというボンダビリティーの新たな問題が生じた。
本発明者はさらに研究を進め、その結果、項の絶縁
性の問題は、被覆膜厚が0.5μ未満であると解消されな
いものの、0.5μ以上であれば解決できること、又、第
２ボンドで不圧着を起こすボンダビリティーの問題は、
被覆膜厚が３μを超えると問題を生じるが、３μ以下で
あればその不圧着が起らないことを知見し、本発明を完
成したものである。
（問題点を解決するための手段） 本発明は、被覆膜厚が0.5〜３μになるように弗素樹
脂を形成したことを特徴とする。
（実施例） 以下、本発明の実施の一例を詳細に説明する。被覆線
（Ａ）は金属，アルミニウム線，銅線などの金属線
（１）に弗素樹脂からなる被覆膜（２）をその膜厚が0.
5〜３μの範囲に形成している。
次に被覆線（Ａ）の製造例を、図面に例示した被覆銅
線の場合で説明する。
高純度銅線製の金属線（１）を脱脂処理した後、この
金属線（１）に弗化ビニル塗料をローラコート法により
膜厚が１μとなるようにコーティングし、そしてキュア
リングして、膜厚が１μの弗素樹脂製被覆膜（２）を有
する被覆線（Ａ）すなわち被覆銅線を得た。
次表は本発明の被覆線（Ａ）が、優れていることを比
較例Ｉ−Ｖとの関係で示している。
（発明の効果） したがって本発明によれば、次の利点がある。
絶縁性に優れ、しかも被覆膜自体が積極的に酸化物を
除去する還元性雰囲気をつくり出して酸化膜の発生を抑
制して酸化膜ができず、さらに被覆樹脂の炭化物もな
く、キャピラリー内面との滑りが良くて詰りがなく、そ
して第２ボンドで不圧着を起こすこともないところの絶
縁性並びにボンダビリティーともに良好である特徴があ
る。
高密度・高集積化が進んでいる半導体のボンディング
用に有益である。
【図面の簡単な説明】
第１図は本発明被覆線の一実施例を示す正面図。第２図
はII−II線に沿える縦断面図である。 図中 （１）は金属線 （２）は被覆膜

Claims (1)

    (57)【特許請求の範囲】
  1. 【請求項１】被覆膜が弗素樹脂で形成され且つその膜厚
    が0.5〜３μに設定されていることを特徴とする半導体
    素子のボンディング用被覆線。
JP62328010A 1987-12-23 1987-12-23 半導体素子のボンディング用被覆線 Expired - Lifetime JP2575163B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62328010A JP2575163B2 (ja) 1987-12-23 1987-12-23 半導体素子のボンディング用被覆線

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62328010A JP2575163B2 (ja) 1987-12-23 1987-12-23 半導体素子のボンディング用被覆線

Publications (2)

Publication Number Publication Date
JPH01168036A JPH01168036A (ja) 1989-07-03
JP2575163B2 true JP2575163B2 (ja) 1997-01-22

Family

ID=18205502

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62328010A Expired - Lifetime JP2575163B2 (ja) 1987-12-23 1987-12-23 半導体素子のボンディング用被覆線

Country Status (1)

Country Link
JP (1) JP2575163B2 (ja)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5799749A (en) * 1980-12-12 1982-06-21 Toshiba Corp Semiconductor device
JPS62265735A (ja) * 1986-05-14 1987-11-18 Nec Corp Ｉｃパツケ−ジ

Also Published As

Publication number Publication date
JPH01168036A (ja) 1989-07-03

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