CN103794571A - 一种功率半导体用新型金属-陶瓷绝缘基板 - Google Patents
一种功率半导体用新型金属-陶瓷绝缘基板 Download PDFInfo
- Publication number
- CN103794571A CN103794571A CN201410034557.7A CN201410034557A CN103794571A CN 103794571 A CN103794571 A CN 103794571A CN 201410034557 A CN201410034557 A CN 201410034557A CN 103794571 A CN103794571 A CN 103794571A
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- CN
- China
- Prior art keywords
- metal
- layer
- substrate
- ceramic
- covers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 103
- 239000000919 ceramic Substances 0.000 title claims abstract description 57
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 111
- 239000002184 metal Substances 0.000 claims abstract description 111
- 238000003466 welding Methods 0.000 claims abstract description 31
- 239000010949 copper Substances 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 12
- 229910052802 copper Inorganic materials 0.000 claims abstract description 10
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 8
- 229910000990 Ni alloy Inorganic materials 0.000 claims abstract description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000009413 insulation Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 238000005245 sintering Methods 0.000 claims description 10
- 229910000679 solder Inorganic materials 0.000 claims description 10
- 238000005476 soldering Methods 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- 238000005234 chemical deposition Methods 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 239000011247 coating layer Substances 0.000 abstract 9
- 230000017525 heat dissipation Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 abstract 1
- 238000005452 bending Methods 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 4
- 230000008602 contraction Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410034557.7A CN103794571B (zh) | 2014-01-25 | 2014-01-25 | 一种功率半导体用新型金属-陶瓷绝缘基板 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410034557.7A CN103794571B (zh) | 2014-01-25 | 2014-01-25 | 一种功率半导体用新型金属-陶瓷绝缘基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103794571A true CN103794571A (zh) | 2014-05-14 |
CN103794571B CN103794571B (zh) | 2017-01-04 |
Family
ID=50670102
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410034557.7A Active CN103794571B (zh) | 2014-01-25 | 2014-01-25 | 一种功率半导体用新型金属-陶瓷绝缘基板 |
Country Status (1)
Country | Link |
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CN (1) | CN103794571B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105140193A (zh) * | 2015-05-04 | 2015-12-09 | 嘉兴斯达半导体股份有限公司 | 一种覆铜陶瓷散热基板的功率模块焊接结构 |
WO2017032334A1 (en) * | 2015-08-26 | 2017-03-02 | Byd Company Limited | Method for soldering chip on metallic-ceramic composite board and metallic-ceramic composite board for soldering chip thereon |
CN111916404A (zh) * | 2019-05-08 | 2020-11-10 | 三菱电机株式会社 | 功率用半导体装置及其制造方法 |
CN112331622A (zh) * | 2019-08-05 | 2021-02-05 | 珠海格力电器股份有限公司 | 一种绝缘栅双极晶体管模块的封装方法及模块 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6345437B1 (en) * | 1997-04-15 | 2002-02-12 | Curamik Electronics Gmbh | Process for the manufacturing of an arched metal ceramic substratum |
JP2002084046A (ja) * | 2000-09-07 | 2002-03-22 | Toshiba Corp | セラミックス回路基板 |
CN102047413A (zh) * | 2008-06-06 | 2011-05-04 | 三菱综合材料株式会社 | 功率模块用基板、功率模块以及功率模块用基板的制造方法 |
CN204045563U (zh) * | 2014-01-25 | 2014-12-24 | 嘉兴斯达半导体股份有限公司 | 功率半导体用新型金属-陶瓷绝缘基板 |
-
2014
- 2014-01-25 CN CN201410034557.7A patent/CN103794571B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6345437B1 (en) * | 1997-04-15 | 2002-02-12 | Curamik Electronics Gmbh | Process for the manufacturing of an arched metal ceramic substratum |
JP2002084046A (ja) * | 2000-09-07 | 2002-03-22 | Toshiba Corp | セラミックス回路基板 |
CN102047413A (zh) * | 2008-06-06 | 2011-05-04 | 三菱综合材料株式会社 | 功率模块用基板、功率模块以及功率模块用基板的制造方法 |
CN204045563U (zh) * | 2014-01-25 | 2014-12-24 | 嘉兴斯达半导体股份有限公司 | 功率半导体用新型金属-陶瓷绝缘基板 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105140193A (zh) * | 2015-05-04 | 2015-12-09 | 嘉兴斯达半导体股份有限公司 | 一种覆铜陶瓷散热基板的功率模块焊接结构 |
WO2017032334A1 (en) * | 2015-08-26 | 2017-03-02 | Byd Company Limited | Method for soldering chip on metallic-ceramic composite board and metallic-ceramic composite board for soldering chip thereon |
CN106486426A (zh) * | 2015-08-26 | 2017-03-08 | 比亚迪股份有限公司 | 用于焊接芯片的金属-陶瓷板和在其上焊接芯片的方法 |
CN111916404A (zh) * | 2019-05-08 | 2020-11-10 | 三菱电机株式会社 | 功率用半导体装置及其制造方法 |
CN111916404B (zh) * | 2019-05-08 | 2024-08-13 | 三菱电机株式会社 | 功率用半导体装置及其制造方法 |
CN112331622A (zh) * | 2019-08-05 | 2021-02-05 | 珠海格力电器股份有限公司 | 一种绝缘栅双极晶体管模块的封装方法及模块 |
Also Published As
Publication number | Publication date |
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CN103794571B (zh) | 2017-01-04 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Novel metal-ceramic insulating substrate for power semiconductor Effective date of registration: 20180726 Granted publication date: 20170104 Pledgee: Agricultural Bank of China Limited by Share Ltd. Jiaxing science and Technology Branch Pledgor: STARPOWER SEMICONDUCTOR LTD. Registration number: 2018330000205 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20221020 Granted publication date: 20170104 Pledgee: Agricultural Bank of China Limited by Share Ltd. Jiaxing science and Technology Branch Pledgor: STARPOWER SEMICONDUCTOR Ltd. Registration number: 2018330000205 |
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CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: No. 988 Kexing Road, Hunan District, Jiaxing City, Zhejiang Province, 314006 Patentee after: Star Semiconductor Co.,Ltd. Address before: No. 988 Kexing Road, Hunan District, Jiaxing City, Zhejiang Province, 314006 Patentee before: STARPOWER SEMICONDUCTOR Ltd. |