JP2569321C - - Google Patents
Info
- Publication number
- JP2569321C JP2569321C JP2569321C JP 2569321 C JP2569321 C JP 2569321C JP 2569321 C JP2569321 C JP 2569321C
- Authority
- JP
- Japan
- Prior art keywords
- tray
- less
- phase growth
- silicon carbide
- vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 21
- 238000001947 vapour-phase growth Methods 0.000 claims description 21
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 18
- 239000007770 graphite material Substances 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910002804 graphite Inorganic materials 0.000 claims description 10
- 239000010439 graphite Substances 0.000 claims description 10
- 239000010410 layer Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 5
- 239000011229 interlayer Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 description 10
- 239000000956 alloy Substances 0.000 description 10
- 229910001026 inconel Inorganic materials 0.000 description 10
- 239000000047 product Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 206010040844 Skin exfoliation Diseases 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011847 coal-based material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011846 petroleum-based material Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000001226 reprecipitation Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Family
ID=
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101593922B1 (ko) | 화학기상증착법에 의한 반도체 공정용 다결정 탄화규소 벌크 부재 및 그 제조방법 | |
| CN101018885B (zh) | 半导体加工部件及用该部件进行的半导体加工 | |
| JPS6169116A (ja) | シリコンウエハ−の連続ｃｖｄコ−テイング用サセプター | |
| US5853840A (en) | Dummy wafer | |
| JP3317781B2 (ja) | 半導体ウエハの熱処理用サセプタの製造方法 | |
| JPH08188408A (ja) | 化学蒸着法による炭化ケイ素成形体及びその製造方法 | |
| JP2004200436A (ja) | サセプタ及びその製造方法 | |
| JP2569321B2 (ja) | 気相成長用トレ−及び気相成長方法 | |
| US20120107613A1 (en) | Corrosion-resistant article coated with aluminum nitride | |
| CN112521154A (zh) | 具有高纯工作表面的SiC陶瓷器件及其制备方法和应用 | |
| JP2569321C (cs) | ||
| JP3811540B2 (ja) | 炭化珪素成形体の製造方法 | |
| KR101139910B1 (ko) | 실리콘 카바이드 복합체 및 그 제조방법 | |
| JPH1116991A (ja) | 半導体製造装置用カーボン支持体 | |
| JPH03146470A (ja) | 炭化ケイ素質材料 | |
| JPH0692761A (ja) | ＣＶＤ−ＳｉＣコートＳｉ含浸ＳｉＣ製品およびその製造方法 | |
| JP2000355779A (ja) | エッチング装置用耐蝕部品 | |
| JP5876259B2 (ja) | 窒化アルミニウム膜によって被覆された部材の製造方法 | |
| JP4514859B2 (ja) | ダミーウエハー | |
| JP2014209620A (ja) | シリコン部材及びシリコン部材の製造方法 | |
| JPH10256108A (ja) | 炭化ケイ素質ダミーウェハ | |
| JPH0786379A (ja) | 半導体製造用サセプタ | |
| JPS62261120A (ja) | ＳｉＣ被膜を有する構造材 | |
| CN118405927A (zh) | 一种改性RB-SiC陶瓷及其制备方法 | |
| JP4012714B2 (ja) | 耐食性部材 |