JP2517172Y2 - 静電誘導型トランジスタ - Google Patents

静電誘導型トランジスタ

Info

Publication number
JP2517172Y2
JP2517172Y2 JP1986010256U JP1025686U JP2517172Y2 JP 2517172 Y2 JP2517172 Y2 JP 2517172Y2 JP 1986010256 U JP1986010256 U JP 1986010256U JP 1025686 U JP1025686 U JP 1025686U JP 2517172 Y2 JP2517172 Y2 JP 2517172Y2
Authority
JP
Japan
Prior art keywords
gate
induction transistor
layer
sit
static induction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1986010256U
Other languages
English (en)
Japanese (ja)
Other versions
JPS62124862U (enExample
Inventor
英二 山中
Original Assignee
株式会社 ト−キン
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社 ト−キン filed Critical 株式会社 ト−キン
Priority to JP1986010256U priority Critical patent/JP2517172Y2/ja
Publication of JPS62124862U publication Critical patent/JPS62124862U/ja
Application granted granted Critical
Publication of JP2517172Y2 publication Critical patent/JP2517172Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP1986010256U 1986-01-29 1986-01-29 静電誘導型トランジスタ Expired - Lifetime JP2517172Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1986010256U JP2517172Y2 (ja) 1986-01-29 1986-01-29 静電誘導型トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1986010256U JP2517172Y2 (ja) 1986-01-29 1986-01-29 静電誘導型トランジスタ

Publications (2)

Publication Number Publication Date
JPS62124862U JPS62124862U (enExample) 1987-08-08
JP2517172Y2 true JP2517172Y2 (ja) 1996-11-13

Family

ID=30796382

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1986010256U Expired - Lifetime JP2517172Y2 (ja) 1986-01-29 1986-01-29 静電誘導型トランジスタ

Country Status (1)

Country Link
JP (1) JP2517172Y2 (enExample)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4996878U (enExample) * 1972-12-15 1974-08-21
JPS531152B2 (enExample) * 1973-07-11 1978-01-14

Also Published As

Publication number Publication date
JPS62124862U (enExample) 1987-08-08

Similar Documents

Publication Publication Date Title
JP3943604B2 (ja) ラテラルｍｏｓｆｅｔ
JP2597412B2 (ja) 半導体装置およびその製造方法
JP3329707B2 (ja) 半導体装置
US6867083B2 (en) Method of forming a body contact of a transistor and structure therefor
US4686551A (en) MOS transistor
JPH0358187B2 (enExample)
JPH08264764A (ja) 半導体装置
EP1145323B1 (en) Electronic device comprising a trench gate field-effect device
US6344676B1 (en) Power semiconductor device having low on-resistance and high breakdown voltage
JP2000106434A (ja) 高耐圧半導体装置
JP2000077663A (ja) 電界効果型半導体装置
JP3509552B2 (ja) 半導体装置
JPS62232167A (ja) 半導体装置
JPS63311766A (ja) Ｍｉｓパワートランジスタ
JP3855386B2 (ja) 半導体装置
JP2002141505A (ja) 電界効果トランジスタ
JP2517173Y2 (ja) 静電誘導型トランジスタ
JPH08213604A (ja) パワーｍｏｓｆｅｔ
US5554878A (en) Intergrated high-voltage resistor including field-plate layers
JPS6373670A (ja) 導電変調型ｍｏｓｆｅｔ
JP2903452B2 (ja) 電界効果トランジスタ
JP3525686B2 (ja) 半導体装置とその製造方法
JP2004349384A (ja) 半導体装置
JP2624373B2 (ja) 半導体装置
JP2938508B2 (ja) 半導体装置