JP2511979Y2 - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JP2511979Y2 JP2511979Y2 JP983988U JP983988U JP2511979Y2 JP 2511979 Y2 JP2511979 Y2 JP 2511979Y2 JP 983988 U JP983988 U JP 983988U JP 983988 U JP983988 U JP 983988U JP 2511979 Y2 JP2511979 Y2 JP 2511979Y2
- Authority
- JP
- Japan
- Prior art keywords
- control element
- semiconductor device
- filler
- heat
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 27
- 239000000945 filler Substances 0.000 claims description 20
- 239000003566 sealing material Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 239000008393 encapsulating agent Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 description 10
- 239000002131 composite material Substances 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 238000001879 gelation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000001112 coagulating effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP983988U JP2511979Y2 (ja) | 1988-01-27 | 1988-01-27 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP983988U JP2511979Y2 (ja) | 1988-01-27 | 1988-01-27 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01115255U JPH01115255U (enrdf_load_stackoverflow) | 1989-08-03 |
| JP2511979Y2 true JP2511979Y2 (ja) | 1996-09-25 |
Family
ID=31216938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP983988U Expired - Lifetime JP2511979Y2 (ja) | 1988-01-27 | 1988-01-27 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2511979Y2 (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002373929A (ja) * | 2001-06-14 | 2002-12-26 | Tokyo Electron Ltd | ウエハ支持体 |
| JP5120032B2 (ja) * | 2008-04-03 | 2013-01-16 | 株式会社デンソー | 電子装置 |
| WO2019017283A1 (ja) | 2017-07-21 | 2019-01-24 | 株式会社村田製作所 | 電子部品 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5740966A (en) * | 1980-08-25 | 1982-03-06 | Hitachi Ltd | Semiconductor device |
| JPS6037248U (ja) * | 1983-08-19 | 1985-03-14 | 富士電機株式会社 | 混成集積回路 |
-
1988
- 1988-01-27 JP JP983988U patent/JP2511979Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01115255U (enrdf_load_stackoverflow) | 1989-08-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5057903A (en) | Thermal heat sink encapsulated integrated circuit | |
| US6601294B1 (en) | Method for making a packaged semiconductor device | |
| JPS63205935A (ja) | 放熱板付樹脂封止型半導体装置 | |
| JPS59198740A (ja) | 樹脂封止形半導体複合素子 | |
| CN107004656B (zh) | 电子装置 | |
| JPH03108744A (ja) | 樹脂封止型半導体装置 | |
| JP2511979Y2 (ja) | 半導体装置 | |
| JPH10261744A (ja) | 半導体装置及びその製造方法 | |
| CN209169123U (zh) | 一种封装结构 | |
| CN116978873A (zh) | 包括第一和第二隔室的功率半导体模块及其制造方法 | |
| JPH01298753A (ja) | ヒートシンク付ピングリッドアレイｉｃパッケージ | |
| JPH04249353A (ja) | 樹脂封止型半導体装置 | |
| JPH0713984B2 (ja) | 半導体装置の製造方法 | |
| JP2003332500A (ja) | 電子回路装置 | |
| CN221727099U (zh) | 混合封装结构 | |
| JPH0415942A (ja) | 半導体装置 | |
| CN216120283U (zh) | 智能功率模块和电器 | |
| JPS59136953A (ja) | 複合素子 | |
| JPS6314465Y2 (enrdf_load_stackoverflow) | ||
| JPS5918685Y2 (ja) | 混成厚膜集積回路装置 | |
| JPS6350808Y2 (enrdf_load_stackoverflow) | ||
| JPH0241865Y2 (enrdf_load_stackoverflow) | ||
| JPH03108364A (ja) | パワーｉｃ装置 | |
| JPS61292346A (ja) | 樹脂封止型半導体装置 | |
| JPS5895853A (ja) | 半導体装置 |