JP2503358Y2 - ラテラル型バイポ―ラデバイス - Google Patents
ラテラル型バイポ―ラデバイスInfo
- Publication number
- JP2503358Y2 JP2503358Y2 JP1989008106U JP810689U JP2503358Y2 JP 2503358 Y2 JP2503358 Y2 JP 2503358Y2 JP 1989008106 U JP1989008106 U JP 1989008106U JP 810689 U JP810689 U JP 810689U JP 2503358 Y2 JP2503358 Y2 JP 2503358Y2
- Authority
- JP
- Japan
- Prior art keywords
- base
- insulating layer
- emitter
- region
- lateral bipolar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004020 conductor Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989008106U JP2503358Y2 (ja) | 1989-01-26 | 1989-01-26 | ラテラル型バイポ―ラデバイス |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989008106U JP2503358Y2 (ja) | 1989-01-26 | 1989-01-26 | ラテラル型バイポ―ラデバイス |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0298633U JPH0298633U (enrdf_load_stackoverflow) | 1990-08-06 |
| JP2503358Y2 true JP2503358Y2 (ja) | 1996-06-26 |
Family
ID=31213688
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989008106U Expired - Lifetime JP2503358Y2 (ja) | 1989-01-26 | 1989-01-26 | ラテラル型バイポ―ラデバイス |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2503358Y2 (enrdf_load_stackoverflow) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5588372A (en) * | 1978-12-26 | 1980-07-04 | Sanyo Electric Co Ltd | Lateral type transistor |
| JPS58210671A (ja) * | 1982-06-01 | 1983-12-07 | Nec Corp | 半導体装置 |
| JPS60153548U (ja) * | 1984-03-24 | 1985-10-12 | 三洋電機株式会社 | ラテラル型トランジスタ |
-
1989
- 1989-01-26 JP JP1989008106U patent/JP2503358Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0298633U (enrdf_load_stackoverflow) | 1990-08-06 |
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