JP2025534922A5 - - Google Patents
Info
- Publication number
- JP2025534922A5 JP2025534922A5 JP2023548807A JP2023548807A JP2025534922A5 JP 2025534922 A5 JP2025534922 A5 JP 2025534922A5 JP 2023548807 A JP2023548807 A JP 2023548807A JP 2023548807 A JP2023548807 A JP 2023548807A JP 2025534922 A5 JP2025534922 A5 JP 2025534922A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- substrate
- semiconductor layer
- drain
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211270027.3 | 2022-10-18 | ||
| CN202211270027.3A CN115346988B (zh) | 2022-10-18 | 2022-10-18 | 一种晶体管、3d存储器及其制备方法、电子设备 |
| PCT/CN2022/137325 WO2024082395A1 (zh) | 2022-10-18 | 2022-12-07 | 晶体管、3d存储器及其制造方法、电子设备 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2025534922A JP2025534922A (ja) | 2025-10-22 |
| JP2025534922A5 true JP2025534922A5 (https=) | 2025-12-12 |
Family
ID=90626099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023548807A Pending JP2025534922A (ja) | 2022-10-18 | 2022-12-07 | トランジスタ、３ｄメモリ及びその製造方法、電子装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US12328863B2 (https=) |
| EP (1) | EP4380329A4 (https=) |
| JP (1) | JP2025534922A (https=) |
| KR (1) | KR20250093445A (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115996570B (zh) * | 2023-03-24 | 2023-06-16 | 北京超弦存储器研究院 | 存储器、存储器的制作方法及电子设备 |
| US20250185331A1 (en) * | 2023-12-04 | 2025-06-05 | International Business Machines Corporation | Stacked transistor backside contact formation |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100574317B1 (ko) | 2004-02-19 | 2006-04-26 | 삼성전자주식회사 | 게이트 구조물, 이를 갖는 반도체 장치 및 그 형성 방법 |
| US7742328B2 (en) | 2007-06-15 | 2010-06-22 | Grandis, Inc. | Method and system for providing spin transfer tunneling magnetic memories utilizing non-planar transistors |
| WO2019005651A1 (en) * | 2017-06-29 | 2019-01-03 | Micron Technology, Inc. | MEMORY BARRETTES COMPRISING VERTICALLY ALTERNATE STAGES OF INSULATING MATERIAL AND MEMORY CELLS, AND METHODS OF MEMORY BAR FORMATION COMPRISING MEMORY CELLS INDIVIDUALLY COMPRISING A TRANSISTOR AND A CAPACITOR |
| CN109309122B (zh) * | 2018-09-17 | 2022-02-01 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示装置 |
| KR102674883B1 (ko) * | 2018-12-21 | 2024-06-14 | 에스케이하이닉스 주식회사 | 적층된 셀 트랜지스터들을 포함하는 비휘발성 메모리 소자 및 상기 비휘발성 메모리 소자의 동작 방법 |
| KR102847704B1 (ko) | 2019-10-08 | 2025-08-21 | 삼성전자주식회사 | 반도체 메모리 소자 및 그의 제조 방법 |
| US11374057B2 (en) * | 2020-06-23 | 2022-06-28 | Taiwan Semiconductor Manufacturing Company Limited | Vertical metal oxide semiconductor channel selector transistor and methods of forming the same |
| US11329051B2 (en) | 2020-08-28 | 2022-05-10 | Micron Technology, Inc. | Gate dielectric repair on three-node access device formation for vertical three-dimensional (3D) memory |
| KR20220050615A (ko) * | 2020-10-16 | 2022-04-25 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 제조 방법 |
| CN114334980B (zh) | 2021-11-17 | 2026-03-20 | 中国科学院微电子研究所 | 一种基于薄膜晶体管的无电容dram单元结构及制造方法 |
| CN114446963B (zh) | 2021-12-01 | 2025-06-06 | 北京超弦存储器研究院 | 半导体存储单元结构、半导体存储器及其制备方法、应用 |
| CN114023744B (zh) * | 2022-01-10 | 2022-03-25 | 长鑫存储技术有限公司 | 一种半导体结构、半导体结构的制备方法和半导体存储器 |
| CN114709211B (zh) | 2022-04-02 | 2022-11-15 | 北京超弦存储器研究院 | 动态存储器及其制作、读写方法、电子设备、存储电路 |
| CN114864583A (zh) | 2022-05-12 | 2022-08-05 | 中国科学院微电子研究所 | 一种无电容dram单元结构及制造方法 |
| CN115020480A (zh) * | 2022-05-31 | 2022-09-06 | 长鑫存储技术有限公司 | 半导体结构 |
| CN115346987B (zh) | 2022-10-18 | 2023-01-10 | 北京超弦存储器研究院 | 一种存储单元、3d存储器及其制备方法、电子设备 |
| CN115346988B (zh) | 2022-10-18 | 2023-01-24 | 北京超弦存储器研究院 | 一种晶体管、3d存储器及其制备方法、电子设备 |
-
2022
- 2022-12-07 JP JP2023548807A patent/JP2025534922A/ja active Pending
- 2022-12-07 EP EP22955193.2A patent/EP4380329A4/en active Pending
- 2022-12-07 KR KR1020237035880A patent/KR20250093445A/ko active Pending
-
2023
- 2023-04-20 US US18/304,219 patent/US12328863B2/en active Active
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