JP2025518666A5 - - Google Patents

Info

Publication number
JP2025518666A5
JP2025518666A5 JP2024565939A JP2024565939A JP2025518666A5 JP 2025518666 A5 JP2025518666 A5 JP 2025518666A5 JP 2024565939 A JP2024565939 A JP 2024565939A JP 2024565939 A JP2024565939 A JP 2024565939A JP 2025518666 A5 JP2025518666 A5 JP 2025518666A5
Authority
JP
Japan
Prior art keywords
memory
circuits
coupled
bit lines
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024565939A
Other languages
English (en)
Japanese (ja)
Other versions
JP2025518666A (ja
Filing date
Publication date
Priority claimed from US17/836,634 external-priority patent/US11967394B2/en
Application filed filed Critical
Publication of JP2025518666A publication Critical patent/JP2025518666A/ja
Publication of JP2025518666A5 publication Critical patent/JP2025518666A5/ja
Pending legal-status Critical Current

Links

JP2024565939A 2022-06-09 2023-04-19 フライングビット線を利用して有効なビット線長を大きくし、より高い性能と高められたメモリ密度をサポートするメモリアレイ、および関連方法 Pending JP2025518666A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/836,634 2022-06-09
US17/836,634 US11967394B2 (en) 2022-06-09 2022-06-09 Memory arrays employing flying bit lines to increase effective bit line length for supporting higher performance, increased memory density, and related methods
PCT/US2023/019031 WO2023239471A1 (en) 2022-06-09 2023-04-19 Memory arrays employing flying bit lines to increase effective bit line length for supporting higher performance, increased memory density, and related methods

Publications (2)

Publication Number Publication Date
JP2025518666A JP2025518666A (ja) 2025-06-19
JP2025518666A5 true JP2025518666A5 (https=) 2026-04-24

Family

ID=86332230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024565939A Pending JP2025518666A (ja) 2022-06-09 2023-04-19 フライングビット線を利用して有効なビット線長を大きくし、より高い性能と高められたメモリ密度をサポートするメモリアレイ、および関連方法

Country Status (6)

Country Link
US (1) US11967394B2 (https=)
EP (1) EP4537335A1 (https=)
JP (1) JP2025518666A (https=)
KR (1) KR20250021458A (https=)
TW (1) TW202349402A (https=)
WO (1) WO2023239471A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250335098A1 (en) * 2024-04-30 2025-10-30 Arm Limited Access time in a memory array

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9305635B2 (en) 2013-10-31 2016-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. High density memory structure
US9275686B2 (en) 2014-05-28 2016-03-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Memory banks with shared input/output circuitry
US9928899B2 (en) * 2015-12-29 2018-03-27 Taiwan Semiconductor Manufacturing Co., Ltd. Flying and twisted bit line architecture for dual-port static random-access memory (DP SRAM)
CN117524279A (zh) 2017-11-15 2024-02-06 三星电子株式会社 具有虚拟体化架构的sram及包括其的系统和方法
KR102845639B1 (ko) * 2019-08-07 2025-08-12 삼성전자주식회사 스토리지 장치

Similar Documents

Publication Publication Date Title
JP5666108B2 (ja) 半導体装置及びこれを備えるシステム
JP3202580B2 (ja) 半導体メモリ装置
US9214195B1 (en) Stack bank type semiconductor memory apparatus capable of improving alignment margin
JP2010092580A (ja) 積層メモリ素子
JPH1040682A (ja) 半導体記憶装置
US8228754B2 (en) Routing access with minimized bus area in multi-port memory device
JPH11339492A5 (https=)
JP2025518666A5 (https=)
JP2003151280A5 (https=)
KR20150028727A (ko) 공유 판독 및 기록 회로들을 가진 타일들을 포함하는 메모리 장치
EP1887582A3 (en) Semiconductor memory with redundant rows and columns and a flexible redundancy architecture
JP2000207891A5 (https=)
JPH07130164A (ja) 半導体装置
US9589605B1 (en) Semiconductor memory device with input/output line
US7630223B2 (en) Memory device and method of arranging signal and power lines
JP2010010369A5 (https=)
US20100271856A1 (en) Semiconductor memory device having hierarchically-constructed i/o lines
CN103177751B (zh) 一种存储器阵列结构
JP2002343086A5 (https=)
JP5458235B2 (ja) 半導体記憶装置、およびlio分割方法
JP5743045B2 (ja) 半導体記憶装置及び半導体記憶装置におけるメモリアクセス方法
US20170053692A1 (en) Semiconductor device with improved sense margin of sense amplifier
JP4570356B2 (ja) オープンディジットアレイ用のセンスアンプおよびアーキテクチャ
JP2000260885A (ja) 半導体集積回路装置
JP2024517141A5 (https=)