KR20250021458A - 더 높은 성능, 증가된 메모리 밀도 및 관련 방법을 지원하기 위해 유효 비트 라인 길이를 늘리기 위해 플라잉 비트 라인을 사용하는 메모리 어레이 - Google Patents

더 높은 성능, 증가된 메모리 밀도 및 관련 방법을 지원하기 위해 유효 비트 라인 길이를 늘리기 위해 플라잉 비트 라인을 사용하는 메모리 어레이 Download PDF

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Publication number
KR20250021458A
KR20250021458A KR1020247040935A KR20247040935A KR20250021458A KR 20250021458 A KR20250021458 A KR 20250021458A KR 1020247040935 A KR1020247040935 A KR 1020247040935A KR 20247040935 A KR20247040935 A KR 20247040935A KR 20250021458 A KR20250021458 A KR 20250021458A
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KR
South Korea
Prior art keywords
memory
circuits
circuit
bit lines
row
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Pending
Application number
KR1020247040935A
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English (en)
Korean (ko)
Inventor
프라모드 콜라
로버트 에이 스위처
Original Assignee
마이크로소프트 테크놀로지 라이센싱, 엘엘씨
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Publication of KR20250021458A publication Critical patent/KR20250021458A/ko
Pending legal-status Critical Current

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Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/02Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • G11C7/1012Data reordering during input/output, e.g. crossbars, layers of multiplexers, shifting or rotating
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1063Control signal output circuits, e.g. status or busy flags, feedback command signals
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18Bit line organisation; Bit line lay-out
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • G11C8/08Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
KR1020247040935A 2022-06-09 2023-04-19 더 높은 성능, 증가된 메모리 밀도 및 관련 방법을 지원하기 위해 유효 비트 라인 길이를 늘리기 위해 플라잉 비트 라인을 사용하는 메모리 어레이 Pending KR20250021458A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/836,634 2022-06-09
US17/836,634 US11967394B2 (en) 2022-06-09 2022-06-09 Memory arrays employing flying bit lines to increase effective bit line length for supporting higher performance, increased memory density, and related methods
PCT/US2023/019031 WO2023239471A1 (en) 2022-06-09 2023-04-19 Memory arrays employing flying bit lines to increase effective bit line length for supporting higher performance, increased memory density, and related methods

Publications (1)

Publication Number Publication Date
KR20250021458A true KR20250021458A (ko) 2025-02-13

Family

ID=86332230

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247040935A Pending KR20250021458A (ko) 2022-06-09 2023-04-19 더 높은 성능, 증가된 메모리 밀도 및 관련 방법을 지원하기 위해 유효 비트 라인 길이를 늘리기 위해 플라잉 비트 라인을 사용하는 메모리 어레이

Country Status (6)

Country Link
US (1) US11967394B2 (https=)
EP (1) EP4537335A1 (https=)
JP (1) JP2025518666A (https=)
KR (1) KR20250021458A (https=)
TW (1) TW202349402A (https=)
WO (1) WO2023239471A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250335098A1 (en) * 2024-04-30 2025-10-30 Arm Limited Access time in a memory array

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9305635B2 (en) 2013-10-31 2016-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. High density memory structure
US9275686B2 (en) 2014-05-28 2016-03-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Memory banks with shared input/output circuitry
US9928899B2 (en) * 2015-12-29 2018-03-27 Taiwan Semiconductor Manufacturing Co., Ltd. Flying and twisted bit line architecture for dual-port static random-access memory (DP SRAM)
CN117524279A (zh) 2017-11-15 2024-02-06 三星电子株式会社 具有虚拟体化架构的sram及包括其的系统和方法
KR102845639B1 (ko) * 2019-08-07 2025-08-12 삼성전자주식회사 스토리지 장치

Also Published As

Publication number Publication date
US20230402069A1 (en) 2023-12-14
JP2025518666A (ja) 2025-06-19
EP4537335A1 (en) 2025-04-16
WO2023239471A1 (en) 2023-12-14
TW202349402A (zh) 2023-12-16
US11967394B2 (en) 2024-04-23

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