JP2024535334A - 高解像度の潜像加工、コントラスト増強及び熱現像、加工のための装置 - Google Patents

高解像度の潜像加工、コントラスト増強及び熱現像、加工のための装置 Download PDF

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JP2024535334A
JP2024535334A JP2024518191A JP2024518191A JP2024535334A JP 2024535334 A JP2024535334 A JP 2024535334A JP 2024518191 A JP2024518191 A JP 2024518191A JP 2024518191 A JP2024518191 A JP 2024518191A JP 2024535334 A JP2024535334 A JP 2024535334A
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irradiated
gas
composition
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acid
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JP2024535334A5 (enExample
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ジェイ カルディノー，ブライアン
ペーテル・デ・シェッペル
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Inpria Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
JP2024518191A 2021-09-24 2022-09-22 高解像度の潜像加工、コントラスト増強及び熱現像、加工のための装置 Pending JP2024535334A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163247885P 2021-09-24 2021-09-24
US63/247,885 2021-09-24
PCT/US2022/044336 WO2023049237A1 (en) 2021-09-24 2022-09-22 High resolution latent image processing, contrast enhancement and thermal development; apparatuses for processing

Publications (2)

Publication Number Publication Date
JP2024535334A true JP2024535334A (ja) 2024-09-30
JP2024535334A5 JP2024535334A5 (enExample) 2025-06-30

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US (1) US20230100995A1 (enExample)
EP (1) EP4405755A4 (enExample)
JP (1) JP2024535334A (enExample)
KR (1) KR20240058159A (enExample)
CN (1) CN117980833A (enExample)
TW (2) TWI842101B (enExample)
WO (1) WO2023049237A1 (enExample)

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CN113227909B (zh) 2018-12-20 2025-07-04 朗姆研究公司 抗蚀剂的干式显影
TWI837391B (zh) 2019-06-26 2024-04-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
US11621172B2 (en) 2020-07-01 2023-04-04 Applied Materials, Inc. Vapor phase thermal etch solutions for metal oxo photoresists
US12416863B2 (en) 2020-07-01 2025-09-16 Applied Materials, Inc. Dry develop process of photoresist
EP4078292A4 (en) 2020-07-07 2023-11-22 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
US20230107357A1 (en) 2020-11-13 2023-04-06 Lam Research Corporation Process tool for dry removal of photoresist
JP7681106B2 (ja) 2020-12-08 2025-05-21 ラム リサーチ コーポレーション 有機蒸気によるフォトレジストの現像
KR20240160248A (ko) 2022-07-01 2024-11-08 램 리써치 코포레이션 에칭 정지 억제를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상
JP2024017893A (ja) * 2022-07-28 2024-02-08 東京エレクトロン株式会社 基板処理方法、プログラム及び基板処理装置
US20240201586A1 (en) * 2022-12-20 2024-06-20 Intel Corporation Precursors and methods for producing tin-based photoresist
US12474640B2 (en) 2023-03-17 2025-11-18 Lam Research Corporation Integration of dry development and etch processes for EUV patterning in a single process chamber
KR20250069677A (ko) * 2023-07-27 2025-05-19 램 리써치 코포레이션 금속-함유 포토레지스트에 대한 올-인-원 건식 현상
WO2025264623A1 (en) * 2024-06-18 2025-12-26 Inpria Corporation Alkylsulfonic acid developer compositions and patterning methods for organometallic oxide photoresists

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JP2001338908A (ja) * 2000-05-26 2001-12-07 Matsushita Electric Ind Co Ltd 有機膜のエッチング方法、半導体装置の製造方法及びパターンの形成方法
JP2019500490A (ja) * 2015-10-13 2019-01-10 インプリア・コーポレイションＩｎｐｒｉａ Ｃｏｒｐｏｒａｔｉｏｎ 有機スズオキシドヒドロキシドのパターン形成組成物、前駆体およびパターン形成
JP2020038320A (ja) * 2018-09-05 2020-03-12 東京エレクトロン株式会社 レジスト膜の製造方法
WO2020264158A1 (en) * 2019-06-26 2020-12-30 Lam Research Corporation Photoresist development with halide chemistries

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JP6081904B2 (ja) * 2013-11-29 2017-02-15 東京エレクトロン株式会社 現像処理装置、現像処理方法、プログラム及びコンピュータ記憶媒体
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US10468249B2 (en) * 2015-09-28 2019-11-05 Taiwan Semiconductor Manufacturing Company, Ltd. Patterning process of a semiconductor structure with a middle layer
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TWI778248B (zh) * 2018-04-05 2022-09-21 美商英培雅股份有限公司 錫十二聚物及具有強euv吸收的輻射可圖案化塗層
TWI911141B (zh) * 2018-06-30 2026-01-11 美商應用材料股份有限公司 含錫之前驅物及沉積含錫薄膜之方法
CN113227909B (zh) * 2018-12-20 2025-07-04 朗姆研究公司 抗蚀剂的干式显影
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CN114270266A (zh) * 2019-06-28 2022-04-01 朗姆研究公司 具有多个图案化辐射吸收元素和/或竖直组成梯度的光致抗蚀剂
CN118020031A (zh) * 2021-07-29 2024-05-10 朗姆研究公司 含金属光致抗蚀剂的再加工

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JP2001338908A (ja) * 2000-05-26 2001-12-07 Matsushita Electric Ind Co Ltd 有機膜のエッチング方法、半導体装置の製造方法及びパターンの形成方法
JP2019500490A (ja) * 2015-10-13 2019-01-10 インプリア・コーポレイションＩｎｐｒｉａ Ｃｏｒｐｏｒａｔｉｏｎ 有機スズオキシドヒドロキシドのパターン形成組成物、前駆体およびパターン形成
JP2021073367A (ja) * 2015-10-13 2021-05-13 インプリア・コーポレイションＩｎｐｒｉａ Ｃｏｒｐｏｒａｔｉｏｎ 有機スズオキシドヒドロキシドのパターン形成組成物、前駆体およびパターン形成
JP2020038320A (ja) * 2018-09-05 2020-03-12 東京エレクトロン株式会社 レジスト膜の製造方法
WO2020264158A1 (en) * 2019-06-26 2020-12-30 Lam Research Corporation Photoresist development with halide chemistries

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Publication number Publication date
TWI842101B (zh) 2024-05-11
TW202318103A (zh) 2023-05-01
EP4405755A4 (en) 2025-10-22
US20230100995A1 (en) 2023-03-30
TW202431035A (zh) 2024-08-01
CN117980833A (zh) 2024-05-03
WO2023049237A1 (en) 2023-03-30
KR20240058159A (ko) 2024-05-03
EP4405755A1 (en) 2024-07-31

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