CN117980833A - 高分辨率潜像处理、对比度增强和热显影以及用于处理的装置 - Google Patents

高分辨率潜像处理、对比度增强和热显影以及用于处理的装置 Download PDF

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Publication number
CN117980833A
CN117980833A CN202280063304.5A CN202280063304A CN117980833A CN 117980833 A CN117980833 A CN 117980833A CN 202280063304 A CN202280063304 A CN 202280063304A CN 117980833 A CN117980833 A CN 117980833A
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CN
China
Prior art keywords
irradiated
contacting
composition
gas
contrast
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Pending
Application number
CN202280063304.5A
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English (en)
Chinese (zh)
Inventor
布莱恩·J·卡迪诺
彼得·戴薛伯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Inpria Corp
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Tokyo Electron Ltd
Inpria Corp
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Filing date
Publication date
Application filed by Tokyo Electron Ltd, Inpria Corp filed Critical Tokyo Electron Ltd
Publication of CN117980833A publication Critical patent/CN117980833A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
CN202280063304.5A 2021-09-24 2022-09-22 高分辨率潜像处理、对比度增强和热显影以及用于处理的装置 Pending CN117980833A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163247885P 2021-09-24 2021-09-24
US63/247,885 2021-09-24
PCT/US2022/044336 WO2023049237A1 (en) 2021-09-24 2022-09-22 High resolution latent image processing, contrast enhancement and thermal development; apparatuses for processing

Publications (1)

Publication Number Publication Date
CN117980833A true CN117980833A (zh) 2024-05-03

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280063304.5A Pending CN117980833A (zh) 2021-09-24 2022-09-22 高分辨率潜像处理、对比度增强和热显影以及用于处理的装置

Country Status (7)

Country Link
US (1) US20230100995A1 (enExample)
EP (1) EP4405755A4 (enExample)
JP (1) JP2024535334A (enExample)
KR (1) KR20240058159A (enExample)
CN (1) CN117980833A (enExample)
TW (2) TWI842101B (enExample)
WO (1) WO2023049237A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113227909B (zh) 2018-12-20 2025-07-04 朗姆研究公司 抗蚀剂的干式显影
TWI837391B (zh) 2019-06-26 2024-04-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
US11621172B2 (en) 2020-07-01 2023-04-04 Applied Materials, Inc. Vapor phase thermal etch solutions for metal oxo photoresists
US12416863B2 (en) 2020-07-01 2025-09-16 Applied Materials, Inc. Dry develop process of photoresist
EP4078292A4 (en) 2020-07-07 2023-11-22 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
US20230107357A1 (en) 2020-11-13 2023-04-06 Lam Research Corporation Process tool for dry removal of photoresist
JP7681106B2 (ja) 2020-12-08 2025-05-21 ラム リサーチ コーポレーション 有機蒸気によるフォトレジストの現像
KR20240160248A (ko) 2022-07-01 2024-11-08 램 리써치 코포레이션 에칭 정지 억제를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상
JP2024017893A (ja) * 2022-07-28 2024-02-08 東京エレクトロン株式会社 基板処理方法、プログラム及び基板処理装置
US20240201586A1 (en) * 2022-12-20 2024-06-20 Intel Corporation Precursors and methods for producing tin-based photoresist
US12474640B2 (en) 2023-03-17 2025-11-18 Lam Research Corporation Integration of dry development and etch processes for EUV patterning in a single process chamber
KR20250069677A (ko) * 2023-07-27 2025-05-19 램 리써치 코포레이션 금속-함유 포토레지스트에 대한 올-인-원 건식 현상
WO2025264623A1 (en) * 2024-06-18 2025-12-26 Inpria Corporation Alkylsulfonic acid developer compositions and patterning methods for organometallic oxide photoresists

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06151338A (ja) * 1992-11-06 1994-05-31 Sumitomo Metal Ind Ltd 気相成長装置
JP3403373B2 (ja) * 2000-05-26 2003-05-06 松下電器産業株式会社 有機膜のエッチング方法、半導体装置の製造方法及びパターンの形成方法
US6534235B1 (en) * 2000-10-31 2003-03-18 Kansai Research Institute, Inc. Photosensitive resin composition and process for forming pattern
JP2004128118A (ja) * 2002-10-01 2004-04-22 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP6081904B2 (ja) * 2013-11-29 2017-02-15 東京エレクトロン株式会社 現像処理装置、現像処理方法、プログラム及びコンピュータ記憶媒体
US9855579B2 (en) * 2014-02-12 2018-01-02 Taiwan Semiconductor Manufacturing Company Spin dispenser module substrate surface protection system
US10468249B2 (en) * 2015-09-28 2019-11-05 Taiwan Semiconductor Manufacturing Company, Ltd. Patterning process of a semiconductor structure with a middle layer
KR20260059663A (ko) * 2015-10-13 2026-04-30 인프리아 코포레이션 유기주석 옥사이드 하이드록사이드 패터닝 조성물, 전구체 및 패터닝
CA2975104A1 (en) * 2017-08-02 2019-02-02 Seastar Chemicals Inc. Organometallic compounds and methods for the deposition of high purity tin oxide
TWI778248B (zh) * 2018-04-05 2022-09-21 美商英培雅股份有限公司 錫十二聚物及具有強euv吸收的輻射可圖案化塗層
TWI911141B (zh) * 2018-06-30 2026-01-11 美商應用材料股份有限公司 含錫之前驅物及沉積含錫薄膜之方法
JP7213642B2 (ja) * 2018-09-05 2023-01-27 東京エレクトロン株式会社 レジスト膜の製造方法
CN113227909B (zh) * 2018-12-20 2025-07-04 朗姆研究公司 抗蚀剂的干式显影
EP3953767A4 (en) * 2019-04-12 2023-06-07 Inpria Corporation ORGANOMETALLIC PHOTORESIN DEVELOPER COMPOSITIONS AND METHODS OF TREATMENT
TWI837391B (zh) * 2019-06-26 2024-04-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
CN114270266A (zh) * 2019-06-28 2022-04-01 朗姆研究公司 具有多个图案化辐射吸收元素和/或竖直组成梯度的光致抗蚀剂
CN118020031A (zh) * 2021-07-29 2024-05-10 朗姆研究公司 含金属光致抗蚀剂的再加工

Also Published As

Publication number Publication date
TWI842101B (zh) 2024-05-11
TW202318103A (zh) 2023-05-01
EP4405755A4 (en) 2025-10-22
US20230100995A1 (en) 2023-03-30
TW202431035A (zh) 2024-08-01
WO2023049237A1 (en) 2023-03-30
JP2024535334A (ja) 2024-09-30
KR20240058159A (ko) 2024-05-03
EP4405755A1 (en) 2024-07-31

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