TWI842101B - 增強顯影對比度之方法及基板處理設備 - Google Patents

增強顯影對比度之方法及基板處理設備 Download PDF

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Publication number
TWI842101B
TWI842101B TW111136067A TW111136067A TWI842101B TW I842101 B TWI842101 B TW I842101B TW 111136067 A TW111136067 A TW 111136067A TW 111136067 A TW111136067 A TW 111136067A TW I842101 B TWI842101 B TW I842101B
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Taiwan
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composition
irradiated
contrast
development
contacting
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TW111136067A
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English (en)
Chinese (zh)
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TW202318103A (zh
Inventor
布萊恩 Ｊ 卡迪諾
彼特 德 謝佩
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美商英培雅股份有限公司
日商東京威力科創股份有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
TW111136067A 2021-09-24 2022-09-23 增強顯影對比度之方法及基板處理設備 TWI842101B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202163247885P 2021-09-24 2021-09-24
US63/247,885 2021-09-24

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TW202318103A TW202318103A (zh) 2023-05-01
TWI842101B true TWI842101B (zh) 2024-05-11

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TW111136067A TWI842101B (zh) 2021-09-24 2022-09-23 增強顯影對比度之方法及基板處理設備
TW113114020A TW202431035A (zh) 2021-09-24 2022-09-23 基板處理設備

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Country Status (7)

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US (1) US20230100995A1 (enExample)
EP (1) EP4405755A4 (enExample)
JP (1) JP2024535334A (enExample)
KR (1) KR20240058159A (enExample)
CN (1) CN117980833A (enExample)
TW (2) TWI842101B (enExample)
WO (1) WO2023049237A1 (enExample)

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CN113227909B (zh) 2018-12-20 2025-07-04 朗姆研究公司 抗蚀剂的干式显影
TWI837391B (zh) 2019-06-26 2024-04-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
US11621172B2 (en) 2020-07-01 2023-04-04 Applied Materials, Inc. Vapor phase thermal etch solutions for metal oxo photoresists
US12416863B2 (en) 2020-07-01 2025-09-16 Applied Materials, Inc. Dry develop process of photoresist
EP4078292A4 (en) 2020-07-07 2023-11-22 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
US20230107357A1 (en) 2020-11-13 2023-04-06 Lam Research Corporation Process tool for dry removal of photoresist
JP7681106B2 (ja) 2020-12-08 2025-05-21 ラム リサーチ コーポレーション 有機蒸気によるフォトレジストの現像
KR20240160248A (ko) 2022-07-01 2024-11-08 램 리써치 코포레이션 에칭 정지 억제를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상
JP2024017893A (ja) * 2022-07-28 2024-02-08 東京エレクトロン株式会社 基板処理方法、プログラム及び基板処理装置
US20240201586A1 (en) * 2022-12-20 2024-06-20 Intel Corporation Precursors and methods for producing tin-based photoresist
US12474640B2 (en) 2023-03-17 2025-11-18 Lam Research Corporation Integration of dry development and etch processes for EUV patterning in a single process chamber
KR20250069677A (ko) * 2023-07-27 2025-05-19 램 리써치 코포레이션 금속-함유 포토레지스트에 대한 올-인-원 건식 현상
WO2025264623A1 (en) * 2024-06-18 2025-12-26 Inpria Corporation Alkylsulfonic acid developer compositions and patterning methods for organometallic oxide photoresists

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US20200223877A1 (en) * 2017-08-02 2020-07-16 Seastar Chemicals Ulc Organometallic compounds and purification of such organometallic compounds
TW202113146A (zh) * 2019-06-28 2021-04-01 美商蘭姆研究公司 具有多個圖案化輻射吸收成分及/或垂直組成梯度的光阻
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TW202126670A (zh) * 2015-10-13 2021-07-16 美商因普利亞公司 有機錫氧化物氫氧化物圖案化組合物、前驅物及圖案化

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TW202126670A (zh) * 2015-10-13 2021-07-16 美商因普利亞公司 有機錫氧化物氫氧化物圖案化組合物、前驅物及圖案化
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CN112654925A (zh) * 2018-06-30 2021-04-13 应用材料公司 含锡前驱物及沉积含锡膜的方法
TW202113146A (zh) * 2019-06-28 2021-04-01 美商蘭姆研究公司 具有多個圖案化輻射吸收成分及/或垂直組成梯度的光阻

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Publication number Publication date
TW202318103A (zh) 2023-05-01
EP4405755A4 (en) 2025-10-22
US20230100995A1 (en) 2023-03-30
TW202431035A (zh) 2024-08-01
CN117980833A (zh) 2024-05-03
WO2023049237A1 (en) 2023-03-30
JP2024535334A (ja) 2024-09-30
KR20240058159A (ko) 2024-05-03
EP4405755A1 (en) 2024-07-31

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