JP2024528580A5 - - Google Patents
Info
- Publication number
- JP2024528580A5 JP2024528580A5 JP2024500462A JP2024500462A JP2024528580A5 JP 2024528580 A5 JP2024528580 A5 JP 2024528580A5 JP 2024500462 A JP2024500462 A JP 2024500462A JP 2024500462 A JP2024500462 A JP 2024500462A JP 2024528580 A5 JP2024528580 A5 JP 2024528580A5
- Authority
- JP
- Japan
- Prior art keywords
- precursor material
- doped
- polysilocurve
- material according
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163220132P | 2021-07-09 | 2021-07-09 | |
| US63/220,132 | 2021-07-09 | ||
| US202263337088P | 2022-04-30 | 2022-04-30 | |
| US63/337,088 | 2022-04-30 | ||
| PCT/US2022/036595 WO2023283471A1 (en) | 2021-07-09 | 2022-07-09 | Sic p-type, and low resistivity, crystals, boules, wafers and devices, and methods of making the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024528580A JP2024528580A (ja) | 2024-07-30 |
| JP2024528580A5 true JP2024528580A5 (https=) | 2025-06-09 |
Family
ID=84801002
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024500462A Pending JP2024528580A (ja) | 2021-07-09 | 2022-07-09 | ＳｉＣｐ型及び低抵抗の結晶、ブール、ウェハー、及びデバイス、並びにそれらを製造する方法 |
| JP2024500466A Pending JP2024524583A (ja) | 2021-07-09 | 2022-07-09 | ＳｉＣｐ型及び低抵抗の結晶、ブール、ウェハー、及びデバイス、並びにそれらを製造する方法 |
| JP2024500465A Pending JP2024525605A (ja) | 2021-07-09 | 2022-07-09 | ＳｉＣｐ型及び低抵抗の結晶、ブール、ウェハー、及びデバイス、並びにそれらを製造する方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024500466A Pending JP2024524583A (ja) | 2021-07-09 | 2022-07-09 | ＳｉＣｐ型及び低抵抗の結晶、ブール、ウェハー、及びデバイス、並びにそれらを製造する方法 |
| JP2024500465A Pending JP2024525605A (ja) | 2021-07-09 | 2022-07-09 | ＳｉＣｐ型及び低抵抗の結晶、ブール、ウェハー、及びデバイス、並びにそれらを製造する方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US20230167582A1 (https=) |
| EP (3) | EP4367083A4 (https=) |
| JP (3) | JP2024528580A (https=) |
| KR (3) | KR20240053577A (https=) |
| CA (3) | CA3225056A1 (https=) |
| WO (3) | WO2023283471A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118086866B (zh) * | 2024-02-27 | 2024-08-20 | 湖南德智新材料有限公司 | 一种制备碳化硅材料的方法及碳化硅材料 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2094547C1 (ru) * | 1996-01-22 | 1997-10-27 | Юрий Александрович Водаков | Сублимационный способ выращивания монокристаллов карбида кремния и источник карбида кремния для осуществления способа |
| US6613143B1 (en) * | 2001-07-06 | 2003-09-02 | Technologies And Devices International, Inc. | Method for fabricating bulk GaN single crystals |
| JP5068423B2 (ja) * | 2004-10-13 | 2012-11-07 | 新日本製鐵株式会社 | 炭化珪素単結晶インゴット、炭化珪素単結晶ウェハ及びその製造方法 |
| US7608524B2 (en) * | 2005-04-19 | 2009-10-27 | Ii-Vi Incorporated | Method of and system for forming SiC crystals having spatially uniform doping impurities |
| JP4469396B2 (ja) * | 2008-01-15 | 2010-05-26 | 新日本製鐵株式会社 | 炭化珪素単結晶インゴット、これから得られる基板及びエピタキシャルウェハ |
| RU2520283C2 (ru) * | 2008-06-04 | 2014-06-20 | Доу Корнинг Корпорейшн | Способ выращивания полупроводника и полупроводниковое устройство |
| JP2010095397A (ja) * | 2008-10-15 | 2010-04-30 | Nippon Steel Corp | 炭化珪素単結晶及び炭化珪素単結晶ウェハ |
| US9464366B2 (en) * | 2009-08-20 | 2016-10-11 | The United States Of America, As Represented By The Secretary Of The Navy | Reduction of basal plane dislocations in epitaxial SiC |
| JP5696630B2 (ja) * | 2011-09-21 | 2015-04-08 | 住友電気工業株式会社 | 炭化珪素基板およびその製造方法 |
| WO2013054580A1 (ja) * | 2011-10-13 | 2013-04-18 | 住友電気工業株式会社 | 炭化珪素基板、炭化珪素半導体装置、炭化珪素基板の製造方法、および炭化珪素半導体装置の製造方法 |
| US8912550B2 (en) * | 2011-12-22 | 2014-12-16 | Sumitomo Electric Industries, Ltd. | Dislocations in SiC semiconductor substrate |
| US9018639B2 (en) * | 2012-10-26 | 2015-04-28 | Dow Corning Corporation | Flat SiC semiconductor substrate |
| US9279192B2 (en) * | 2014-07-29 | 2016-03-08 | Dow Corning Corporation | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology |
| DE102014217956B4 (de) * | 2014-09-09 | 2018-05-09 | Sicrystal Ag | Herstellungsverfahren für einen Vanadium-dotierten SiC-Volumeneinkristall und Vanadium-dotiertes SiC-Substrat |
| US10753010B2 (en) * | 2014-09-25 | 2020-08-25 | Pallidus, Inc. | Vapor deposition apparatus and techniques using high puritiy polymer derived silicon carbide |
| US10633400B2 (en) * | 2015-02-28 | 2020-04-28 | Melior Innovations, Inc. | Nanocomposite silicon oxygen carbon materials and uses |
| JP6624868B2 (ja) * | 2015-09-29 | 2019-12-25 | 昭和電工株式会社 | ｐ型低抵抗率炭化珪素単結晶基板 |
| JP2017065986A (ja) * | 2015-09-30 | 2017-04-06 | 新日鐵住金株式会社 | 低抵抗率炭化珪素単結晶基板の製造方法 |
| CN109155239B (zh) * | 2016-05-20 | 2023-04-21 | 三菱电机株式会社 | 碳化硅外延基板及碳化硅半导体装置 |
| US20180244513A1 (en) * | 2017-02-28 | 2018-08-30 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Silicon carbide structure, device, and method |
| DE112018001768B4 (de) * | 2017-03-28 | 2024-12-12 | Mitsubishi Electric Corporation | Siliciumcarbid-substrat, verfahren zum herstellen eines siliciumcarbid-substrats und verfahren zum herstellen einer siliciumcarbid-halbleitervorrichtung |
| JP7352058B2 (ja) * | 2017-11-01 | 2023-09-28 | セントラル硝子株式会社 | 炭化ケイ素単結晶の製造方法 |
| JP7085833B2 (ja) * | 2017-12-25 | 2022-06-17 | 昭和電工株式会社 | 炭化珪素単結晶の製造方法 |
| JP6945858B2 (ja) * | 2018-04-26 | 2021-10-06 | 国立研究開発法人産業技術総合研究所 | 炭化珪素エピタキシャルウェハ及び炭化珪素半導体装置 |
| CN115279956A (zh) * | 2019-12-27 | 2022-11-01 | 沃孚半导体公司 | 大直径碳化硅晶片 |
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2022
- 2022-07-09 JP JP2024500462A patent/JP2024528580A/ja active Pending
- 2022-07-09 CA CA3225056A patent/CA3225056A1/en active Pending
- 2022-07-09 KR KR1020247004739A patent/KR20240053577A/ko active Pending
- 2022-07-09 EP EP22838503.5A patent/EP4367083A4/en active Pending
- 2022-07-09 WO PCT/US2022/036595 patent/WO2023283471A1/en not_active Ceased
- 2022-07-09 WO PCT/US2022/036606 patent/WO2023283474A1/en not_active Ceased
- 2022-07-09 US US17/861,186 patent/US20230167582A1/en active Pending
- 2022-07-09 KR KR1020247004734A patent/KR20240064624A/ko active Pending
- 2022-07-09 WO PCT/US2022/036597 patent/WO2023283472A1/en not_active Ceased
- 2022-07-09 US US17/861,188 patent/US20230167583A1/en active Pending
- 2022-07-09 JP JP2024500466A patent/JP2024524583A/ja active Pending
- 2022-07-09 KR KR1020247004728A patent/KR20240064623A/ko active Pending
- 2022-07-09 JP JP2024500465A patent/JP2024525605A/ja active Pending
- 2022-07-09 CA CA3225061A patent/CA3225061A1/en active Pending
- 2022-07-09 US US17/861,187 patent/US20230167580A1/en active Pending
- 2022-07-09 EP EP22838506.8A patent/EP4367711A4/en active Pending
- 2022-07-09 EP EP22838504.3A patent/EP4367710A4/en active Pending
- 2022-07-09 CA CA3225066A patent/CA3225066A1/en active Pending