KR20240053577A - SiC P-형 저저항성 결정체, 불, 웨이퍼 및 디바이스, 그리고 이를 제조하는 방법 - Google Patents

SiC P-형 저저항성 결정체, 불, 웨이퍼 및 디바이스, 그리고 이를 제조하는 방법 Download PDF

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KR20240053577A
KR20240053577A KR1020247004739A KR20247004739A KR20240053577A KR 20240053577 A KR20240053577 A KR 20240053577A KR 1020247004739 A KR1020247004739 A KR 1020247004739A KR 20247004739 A KR20247004739 A KR 20247004739A KR 20240053577 A KR20240053577 A KR 20240053577A
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type sic
wafer
sic
type
sic wafer
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Korean (ko)
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다렌 한센
더글라스 듀크스
마크 로보다
마크 랜드
주안 카를로스 로조
빅토르 토레스
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팔리두스, 인크.
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    • H01L21/02005—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
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    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/5603—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides with a well-defined oxygen content, e.g. oxycarbides
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C04B35/571—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained from Si-containing polymer precursors or organosilicon monomers
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
    • C04B35/632—Organic additives
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    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
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    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3427—Silicates other than clay, e.g. water glass
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
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    • C04B2235/40—Metallic constituents or additives not added as binding phase
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/48—Organic compounds becoming part of a ceramic after heat treatment, e.g. carbonising phenol resins
    • C04B2235/483—Si-containing organic compounds, e.g. silicone resins, (poly)silanes, (poly)siloxanes or (poly)silazanes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020247004739A 2021-07-09 2022-07-09 SiC P-형 저저항성 결정체, 불, 웨이퍼 및 디바이스, 그리고 이를 제조하는 방법 Pending KR20240053577A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202163220132P 2021-07-09 2021-07-09
US63/220,132 2021-07-09
US202263337088P 2022-04-30 2022-04-30
US63/337,088 2022-04-30
PCT/US2022/036606 WO2023283474A1 (en) 2021-07-09 2022-07-09 Sic p-type, and low resistivity, crystals, boules, wafers and devices, and methods of making the same

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KR20240053577A true KR20240053577A (ko) 2024-04-24

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Application Number Title Priority Date Filing Date
KR1020247004739A Pending KR20240053577A (ko) 2021-07-09 2022-07-09 SiC P-형 저저항성 결정체, 불, 웨이퍼 및 디바이스, 그리고 이를 제조하는 방법
KR1020247004734A Pending KR20240064624A (ko) 2021-07-09 2022-07-09 SiC P-형 저저항성 결정체, 불, 웨이퍼 및 디바이스, 그리고 이를 제조하는 방법
KR1020247004728A Pending KR20240064623A (ko) 2021-07-09 2022-07-09 SiC P-형 저저항성 결정체, 불, 웨이퍼 및 디바이스, 그리고 이를 제조하는 방법

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KR1020247004734A Pending KR20240064624A (ko) 2021-07-09 2022-07-09 SiC P-형 저저항성 결정체, 불, 웨이퍼 및 디바이스, 그리고 이를 제조하는 방법
KR1020247004728A Pending KR20240064623A (ko) 2021-07-09 2022-07-09 SiC P-형 저저항성 결정체, 불, 웨이퍼 및 디바이스, 그리고 이를 제조하는 방법

Country Status (6)

Country Link
US (3) US20230167582A1 (https=)
EP (3) EP4367083A4 (https=)
JP (3) JP2024528580A (https=)
KR (3) KR20240053577A (https=)
CA (3) CA3225056A1 (https=)
WO (3) WO2023283471A1 (https=)

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Publication number Priority date Publication date Assignee Title
CN118086866B (zh) * 2024-02-27 2024-08-20 湖南德智新材料有限公司 一种制备碳化硅材料的方法及碳化硅材料

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2094547C1 (ru) * 1996-01-22 1997-10-27 Юрий Александрович Водаков Сублимационный способ выращивания монокристаллов карбида кремния и источник карбида кремния для осуществления способа
US6613143B1 (en) * 2001-07-06 2003-09-02 Technologies And Devices International, Inc. Method for fabricating bulk GaN single crystals
JP5068423B2 (ja) * 2004-10-13 2012-11-07 新日本製鐵株式会社 炭化珪素単結晶インゴット、炭化珪素単結晶ウェハ及びその製造方法
US7608524B2 (en) * 2005-04-19 2009-10-27 Ii-Vi Incorporated Method of and system for forming SiC crystals having spatially uniform doping impurities
JP4469396B2 (ja) * 2008-01-15 2010-05-26 新日本製鐵株式会社 炭化珪素単結晶インゴット、これから得られる基板及びエピタキシャルウェハ
RU2520283C2 (ru) * 2008-06-04 2014-06-20 Доу Корнинг Корпорейшн Способ выращивания полупроводника и полупроводниковое устройство
JP2010095397A (ja) * 2008-10-15 2010-04-30 Nippon Steel Corp 炭化珪素単結晶及び炭化珪素単結晶ウェハ
US9464366B2 (en) * 2009-08-20 2016-10-11 The United States Of America, As Represented By The Secretary Of The Navy Reduction of basal plane dislocations in epitaxial SiC
JP5696630B2 (ja) * 2011-09-21 2015-04-08 住友電気工業株式会社 炭化珪素基板およびその製造方法
WO2013054580A1 (ja) * 2011-10-13 2013-04-18 住友電気工業株式会社 炭化珪素基板、炭化珪素半導体装置、炭化珪素基板の製造方法、および炭化珪素半導体装置の製造方法
US8912550B2 (en) * 2011-12-22 2014-12-16 Sumitomo Electric Industries, Ltd. Dislocations in SiC semiconductor substrate
US9018639B2 (en) * 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9279192B2 (en) * 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
DE102014217956B4 (de) * 2014-09-09 2018-05-09 Sicrystal Ag Herstellungsverfahren für einen Vanadium-dotierten SiC-Volumeneinkristall und Vanadium-dotiertes SiC-Substrat
US10753010B2 (en) * 2014-09-25 2020-08-25 Pallidus, Inc. Vapor deposition apparatus and techniques using high puritiy polymer derived silicon carbide
US10633400B2 (en) * 2015-02-28 2020-04-28 Melior Innovations, Inc. Nanocomposite silicon oxygen carbon materials and uses
JP6624868B2 (ja) * 2015-09-29 2019-12-25 昭和電工株式会社 ｐ型低抵抗率炭化珪素単結晶基板
JP2017065986A (ja) * 2015-09-30 2017-04-06 新日鐵住金株式会社 低抵抗率炭化珪素単結晶基板の製造方法
CN109155239B (zh) * 2016-05-20 2023-04-21 三菱电机株式会社 碳化硅外延基板及碳化硅半导体装置
US20180244513A1 (en) * 2017-02-28 2018-08-30 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Silicon carbide structure, device, and method
DE112018001768B4 (de) * 2017-03-28 2024-12-12 Mitsubishi Electric Corporation Siliciumcarbid-substrat, verfahren zum herstellen eines siliciumcarbid-substrats und verfahren zum herstellen einer siliciumcarbid-halbleitervorrichtung
JP7352058B2 (ja) * 2017-11-01 2023-09-28 セントラル硝子株式会社 炭化ケイ素単結晶の製造方法
JP7085833B2 (ja) * 2017-12-25 2022-06-17 昭和電工株式会社 炭化珪素単結晶の製造方法
JP6945858B2 (ja) * 2018-04-26 2021-10-06 国立研究開発法人産業技術総合研究所 炭化珪素エピタキシャルウェハ及び炭化珪素半導体装置
CN115279956A (zh) * 2019-12-27 2022-11-01 沃孚半导体公司 大直径碳化硅晶片

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US20230167582A1 (en) 2023-06-01
EP4367710A1 (en) 2024-05-15
CA3225066A1 (en) 2023-01-12
KR20240064624A (ko) 2024-05-13
US20230167583A1 (en) 2023-06-01
JP2024525605A (ja) 2024-07-12
KR20240064623A (ko) 2024-05-13
EP4367083A1 (en) 2024-05-15
JP2024528580A (ja) 2024-07-30
WO2023283472A1 (en) 2023-01-12
EP4367711A1 (en) 2024-05-15
EP4367083A4 (en) 2025-05-28
WO2023283474A1 (en) 2023-01-12
EP4367711A4 (en) 2025-06-04
US20230167580A1 (en) 2023-06-01
WO2023283471A1 (en) 2023-01-12
EP4367710A4 (en) 2025-04-23
JP2024524583A (ja) 2024-07-05
CA3225056A1 (en) 2023-01-12
CA3225061A1 (en) 2023-01-12

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